TWI439493B - 微細圖型轉印材料 - Google Patents
微細圖型轉印材料 Download PDFInfo
- Publication number
- TWI439493B TWI439493B TW097104648A TW97104648A TWI439493B TW I439493 B TWI439493 B TW I439493B TW 097104648 A TW097104648 A TW 097104648A TW 97104648 A TW97104648 A TW 97104648A TW I439493 B TWI439493 B TW I439493B
- Authority
- TW
- Taiwan
- Prior art keywords
- fine pattern
- transfer material
- pattern transfer
- fluorene
- butoxy
- Prior art date
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- 238000012546 transfer Methods 0.000 title claims abstract description 61
- 239000000463 material Substances 0.000 title claims abstract description 59
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 230000000737 periodic effect Effects 0.000 claims abstract description 8
- -1 N-butyl Chemical group 0.000 claims description 19
- 238000000465 moulding Methods 0.000 claims description 11
- KODHMTSABADILY-UHFFFAOYSA-N C(C)O[Ru](OCC)(OCC)(OCC)OCC Chemical compound C(C)O[Ru](OCC)(OCC)(OCC)OCC KODHMTSABADILY-UHFFFAOYSA-N 0.000 claims description 7
- 229920000734 polysilsesquioxane polymer Polymers 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000004793 Polystyrene Substances 0.000 claims description 5
- XGZNHFPFJRZBBT-UHFFFAOYSA-N ethanol;titanium Chemical compound [Ti].CCO.CCO.CCO.CCO XGZNHFPFJRZBBT-UHFFFAOYSA-N 0.000 claims description 5
- 229920002223 polystyrene Polymers 0.000 claims description 5
- LCVKJYCXBLYJRF-UHFFFAOYSA-N C(CCC)O[Ru](OCCCC)(OCCCC)(OCCCC)OCCCC Chemical compound C(CCC)O[Ru](OCCCC)(OCCCC)(OCCCC)OCCCC LCVKJYCXBLYJRF-UHFFFAOYSA-N 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 150000003304 ruthenium compounds Chemical class 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000011342 resin composition Substances 0.000 abstract description 6
- 150000003961 organosilicon compounds Chemical class 0.000 abstract 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 27
- 239000000758 substrate Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 24
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 9
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- QAXVLVRBNYURAU-UHFFFAOYSA-N CCCCOC(C=CC=C1C2)=C1C(C(OCCCC)=C1OCCCC)=C2C(OCCCC)=C1OCCCC Chemical compound CCCCOC(C=CC=C1C2)=C1C(C(OCCCC)=C1OCCCC)=C2C(OCCCC)=C1OCCCC QAXVLVRBNYURAU-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- RUVZAADPXPIBEF-UHFFFAOYSA-N C(CC)OC1=C2C=3C(=C(C(=C(C3CC2=CC=C1)OCCC)OCCC)OCCC)OCCC Chemical compound C(CC)OC1=C2C=3C(=C(C(=C(C3CC2=CC=C1)OCCC)OCCC)OCCC)OCCC RUVZAADPXPIBEF-UHFFFAOYSA-N 0.000 description 4
- 150000004703 alkoxides Chemical class 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- YUJUWQNTBPAMHS-UHFFFAOYSA-N 1,2,3,4,5-penta(propan-2-yloxy)-9H-fluorene Chemical compound C(C)(C)OC1=C2C=3C(=C(C(=C(C=3CC2=CC=C1)OC(C)C)OC(C)C)OC(C)C)OC(C)C YUJUWQNTBPAMHS-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- SNOJPWLNAMAYSX-UHFFFAOYSA-N 2-methylpropan-1-ol;titanium Chemical compound [Ti].CC(C)CO.CC(C)CO.CC(C)CO.CC(C)CO SNOJPWLNAMAYSX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZBMPDAVYPSGEGT-UHFFFAOYSA-N C(C(C)C)OC1=C2C=3C(=C(C(=C(C3CC2=CC=C1)OCC(C)C)OCC(C)C)OCC(C)C)OCC(C)C Chemical compound C(C(C)C)OC1=C2C=3C(=C(C(=C(C3CC2=CC=C1)OCC(C)C)OCC(C)C)OCC(C)C)OCC(C)C ZBMPDAVYPSGEGT-UHFFFAOYSA-N 0.000 description 3
- XCLXXYFXTRVBMI-UHFFFAOYSA-N CC(C)O[W](OC(C)C)(OC(C)C)(OC(C)C)OC(C)C Chemical compound CC(C)O[W](OC(C)C)(OC(C)C)(OC(C)C)OC(C)C XCLXXYFXTRVBMI-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 150000008282 halocarbons Chemical class 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- ZEIWWVGGEOHESL-UHFFFAOYSA-N methanol;titanium Chemical compound [Ti].OC.OC.OC.OC ZEIWWVGGEOHESL-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229930004725 sesquiterpene Natural products 0.000 description 3
- 150000004354 sesquiterpene derivatives Chemical class 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LZUQNFJSOBJLGL-UHFFFAOYSA-N CC(C)[O-].CC(C)[O-].CC(C)O.[Ba+2] Chemical compound CC(C)[O-].CC(C)[O-].CC(C)O.[Ba+2] LZUQNFJSOBJLGL-UHFFFAOYSA-N 0.000 description 2
- WZBHOALQTBXZGB-UHFFFAOYSA-N COC1=C2C=3C(=C(C(=C(C3CC2=CC=C1)OC)OC)OC)OC Chemical compound COC1=C2C=3C(=C(C(=C(C3CC2=CC=C1)OC)OC)OC)OC WZBHOALQTBXZGB-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- BSDOQSMQCZQLDV-UHFFFAOYSA-N butan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] BSDOQSMQCZQLDV-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- ABGLZESYHATICB-UHFFFAOYSA-N ethanol;molybdenum Chemical compound [Mo].CCO.CCO.CCO.CCO.CCO ABGLZESYHATICB-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920001748 polybutylene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- BCWYYHBWCZYDNB-UHFFFAOYSA-N propan-2-ol;zirconium Chemical compound [Zr].CC(C)O.CC(C)O.CC(C)O.CC(C)O BCWYYHBWCZYDNB-UHFFFAOYSA-N 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- FNAZKACFHIFWFD-UHFFFAOYSA-N 1,1,2,2-tetra(propan-2-yl)hydrazine Chemical compound CC(C)N(C(C)C)N(C(C)C)C(C)C FNAZKACFHIFWFD-UHFFFAOYSA-N 0.000 description 1
- XZYUDSJBBLNMQA-UHFFFAOYSA-N 1,1,2-triethoxyhydrazine Chemical compound C(C)ONN(OCC)OCC XZYUDSJBBLNMQA-UHFFFAOYSA-N 0.000 description 1
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 1
- JUQPJJFSZJPLPK-UHFFFAOYSA-N 1-butoxy-9h-fluorene Chemical compound C1C2=CC=CC=C2C2=C1C(OCCCC)=CC=C2 JUQPJJFSZJPLPK-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- AXSQQVXQFPDXFV-UHFFFAOYSA-N C(C(C)C)O[Ru](OCC(C)C)(OCC(C)C)(OCC(C)C)OCC(C)C Chemical compound C(C(C)C)O[Ru](OCC(C)C)(OCC(C)C)(OCC(C)C)OCC(C)C AXSQQVXQFPDXFV-UHFFFAOYSA-N 0.000 description 1
- SJEWZOLMZUOLTG-UHFFFAOYSA-N C(C)(C)O[Ru](OC(C)C)(OC(C)C)(OC(C)C)OC(C)C Chemical compound C(C)(C)O[Ru](OC(C)C)(OC(C)C)(OC(C)C)OC(C)C SJEWZOLMZUOLTG-UHFFFAOYSA-N 0.000 description 1
- CPFSCZWZIBLAGK-UHFFFAOYSA-N C(CC)OC=1C(=C(C=2CC3=CC=CC=C3C2C1)OCCC)OCCC Chemical compound C(CC)OC=1C(=C(C=2CC3=CC=CC=C3C2C1)OCCC)OCCC CPFSCZWZIBLAGK-UHFFFAOYSA-N 0.000 description 1
- ZTCZAUDSJOHCAM-UHFFFAOYSA-N C(CCC)O[Ru] Chemical compound C(CCC)O[Ru] ZTCZAUDSJOHCAM-UHFFFAOYSA-N 0.000 description 1
- YQEVIZPKEOELNL-UHFFFAOYSA-N CCCCO[Zr] Chemical compound CCCCO[Zr] YQEVIZPKEOELNL-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- NANPZWFIPUIKPF-UHFFFAOYSA-N [Mn++].CCCC[O-].CCCC[O-] Chemical compound [Mn++].CCCC[O-].CCCC[O-] NANPZWFIPUIKPF-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- OHBRHBQMHLEELN-UHFFFAOYSA-N acetic acid;1-butoxybutane Chemical compound CC(O)=O.CCCCOCCCC OHBRHBQMHLEELN-UHFFFAOYSA-N 0.000 description 1
- YENIOYBTCIZCBJ-UHFFFAOYSA-N acetic acid;1-methoxypropan-2-ol Chemical compound CC(O)=O.COCC(C)O YENIOYBTCIZCBJ-UHFFFAOYSA-N 0.000 description 1
- FUECIDVNGAUMGJ-UHFFFAOYSA-N acetic acid;2-(2-butoxyethoxy)ethanol Chemical compound CC(O)=O.CCCCOCCOCCO FUECIDVNGAUMGJ-UHFFFAOYSA-N 0.000 description 1
- GTYLEVMOSBBKCQ-UHFFFAOYSA-N acetic acid;2-(2-ethoxyethoxy)ethanol Chemical compound CC(O)=O.CCOCCOCCO GTYLEVMOSBBKCQ-UHFFFAOYSA-N 0.000 description 1
- LTOATULEBMBWSO-UHFFFAOYSA-N acetic acid;2-ethoxyethanol Chemical compound CC(O)=O.CCOCCO LTOATULEBMBWSO-UHFFFAOYSA-N 0.000 description 1
- STWHDNSRIOHYPG-UHFFFAOYSA-N acetic acid;2-methoxyethanol Chemical compound CC(O)=O.COCCO STWHDNSRIOHYPG-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 150000001622 bismuth compounds Chemical class 0.000 description 1
- FGVNCNTVSHHPTI-UHFFFAOYSA-N butoxyaluminum Chemical compound CCCCO[Al] FGVNCNTVSHHPTI-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000001785 cerium compounds Chemical class 0.000 description 1
- VBXHMSMVQZJJLD-UHFFFAOYSA-N cobalt(2+);propan-2-olate Chemical compound [Co+2].CC(C)[O-].CC(C)[O-] VBXHMSMVQZJJLD-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- AWXKYODXCCJWNF-UHFFFAOYSA-N ethanol tungsten Chemical compound [W].CCO.CCO.CCO.CCO.CCO AWXKYODXCCJWNF-UHFFFAOYSA-N 0.000 description 1
- ZFSQRSOTOXERMJ-UHFFFAOYSA-N ethanol;iron Chemical compound [Fe].CCO.CCO.CCO ZFSQRSOTOXERMJ-UHFFFAOYSA-N 0.000 description 1
- UARGAUQGVANXCB-UHFFFAOYSA-N ethanol;zirconium Chemical compound [Zr].CCO.CCO.CCO.CCO UARGAUQGVANXCB-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-M isovalerate Chemical compound CC(C)CC([O-])=O GWYFCOCPABKNJV-UHFFFAOYSA-M 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N para-benzoquinone Natural products O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- FYZCZSHSYIVZQU-UHFFFAOYSA-N pentamethoxybismuth Chemical compound CO[Bi](OC)(OC)(OC)OC FYZCZSHSYIVZQU-UHFFFAOYSA-N 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- XPGAWFIWCWKDDL-UHFFFAOYSA-N propan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] XPGAWFIWCWKDDL-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- SCQMMUROAWTEMY-UHFFFAOYSA-N tetradecoxyphosphane Chemical compound CCCCCCCCCCCCCCOP SCQMMUROAWTEMY-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- RLVZHWWAGSWRBR-UHFFFAOYSA-N tri(propan-2-yloxy)gallane Chemical compound [Ga+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] RLVZHWWAGSWRBR-UHFFFAOYSA-N 0.000 description 1
- MYWQGROTKMBNKN-UHFFFAOYSA-N tributoxyalumane Chemical compound [Al+3].CCCC[O-].CCCC[O-].CCCC[O-] MYWQGROTKMBNKN-UHFFFAOYSA-N 0.000 description 1
- UAEJRRZPRZCUBE-UHFFFAOYSA-N trimethoxyalumane Chemical compound [Al+3].[O-]C.[O-]C.[O-]C UAEJRRZPRZCUBE-UHFFFAOYSA-N 0.000 description 1
- OBROYCQXICMORW-UHFFFAOYSA-N tripropoxyalumane Chemical compound [Al+3].CCC[O-].CCC[O-].CCC[O-] OBROYCQXICMORW-UHFFFAOYSA-N 0.000 description 1
- DAOVYDBYKGXFOB-UHFFFAOYSA-N tris(2-methylpropoxy)alumane Chemical compound [Al+3].CC(C)C[O-].CC(C)C[O-].CC(C)C[O-] DAOVYDBYKGXFOB-UHFFFAOYSA-N 0.000 description 1
- MDDPTCUZZASZIQ-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]alumane Chemical compound [Al+3].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] MDDPTCUZZASZIQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- WXKZSTUKHWTJCF-UHFFFAOYSA-N zinc;ethanolate Chemical compound [Zn+2].CC[O-].CC[O-] WXKZSTUKHWTJCF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/855—Coating only part of a support with a magnetic layer
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- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Ceramic Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Multicomponent Fibers (AREA)
Description
本發明係關於一種可適宜使用於半導體製造製程及磁直磁性記錄方式的圖型媒體製造製程等之微細圖型轉印材料。
於半導體製造製程及磁直磁性記錄方式的圖型媒體製造製程等之中用以使必需之微細圖型進行奈米壓印成形之技術、其中轉印材料之開發自產業界被強烈地追求。
至今,使聚氫化倍半矽氧烷所產生之塗佈膜形成於基板上之後,使該塗佈面以150℃以下進行預烘烤後進行模壓,俾於基板上使微細圖型於室溫進行奈米壓印成形之技術已被揭示(參照專利文獻1及非專利文獻1、2、3)。進一步亦揭示使用籠形聚倍半矽氧烷之同樣的技術(參照專利文獻2)。如此之技術係不僅半導體製造製程,而亦可開始應用於圖型式媒體或軌道分離式媒體等之磁性記錄媒體之加工(參照專利文獻3)。但,至今所使用之聚合物係有耐熱性低、圖型形成後之環境係無法維持圖型形成之問題。
為克服如此之問題點,亦揭示使用耐熱性高之聚醯亞胺樹脂而形成微細圖型之技術(參照專利文獻4)。但,矩形之上部以凹陷形狀所轉印等於成形性上有問題。
[專利文獻1]特開2003-100609號公報
[專利文獻2]特開2006-285017號公報[專利文獻3]特開2006-302396號公報[專利文獻4]特開2006-110956號公報
[非專利文獻2]Y.lgaku et al.,Jpn.J.Appli.phys.,41,4198(2002)[非專利文獻2]S.Matsui et al.,J.Vac.Sci.Technol.B,21,688(2003)[非專利文獻3]S.Z.Chen et al.,J.Vac.Sci.Technol.B,24,1934(2006)
本發明之目的在於提供一種藉奈米壓印成形而適當地形成微細圖型之轉印材料。
本發明人等係關於上述課題,進行專心研究之結果,發現調製於有機矽化合物中混合有金屬化合物之樹脂組成物以提昇耐熱性之微細圖型轉印材料乃可達成本發明之目的。亦即,本發明係由以下之事項所構成。
[1]一種微細圖型轉印材料,係使用於奈米壓印成形,其特徵在於:含有有機矽化合物與周期表之第3族至第14族的金屬化合物。
[2]如[1]之微細圖型轉印材料,其中該有機矽化合物為聚倍半矽氧烷化合物。
[3]如[1]或[2]之微細圖型轉印材料,其中該金屬化合物為以下述式(1)所示;M(OR)n
式(1)
(式中,M係屬於周期表第3族~14族的金屬元素,R表示碳數1~5之烷基或苯基,n係表示1~5之整數)。
[4]如[3]之微細圖型轉印材料,其中前述式(1)中之M為Nb、Ti、Ta或Hf,R為甲基、乙基、丙基、異丙基、正丁基、第二丁基或第三丁基。
[5]如[1]~[4]中任一項的之微細圖型轉印材料,其中該有機矽化合物為聚苯基倍半矽氧烷或聚苯乙烯基倍半矽氧烷,該金屬化合物為四乙氧基鈦、五乙氧基鉭、五正丁氧基鉭或五乙氧基鎢。
本發明之微細圖型轉印材料係可適宜使用於耐熱性優,且半導體製造製程及磁直磁性記錄方式的圖型媒體製造製程等必須之微細圖型。
以下具體地說明有關本發明之微細圖型轉印材料。
本發明之微細圖型轉印材料係含有有機矽化合物與金屬化合物。微細圖型係於基板上所塗佈之本發明的轉印材料,藉由預先押住刻入微細圖型之模具而轉印。
<有機矽化合物>
有機矽化合物係可使用聚矽氧烷樹脂及聚倍半矽氧烷化合物,但尤宜使用聚倍半矽氧烷。此處,「聚倍半矽氧烷」係藉由使三官能性矽烷化合物水解而得到,於主鏈上具有矽氧烷鍵,於側鏈上具有氫原子或有機基之網絡型聚合物或多面體群簇。
聚倍半矽氧烷之具體例可舉例如聚氫化倍半矽氧烷、聚甲基倍半矽氧烷、聚乙基倍半矽氧烷、聚丙基倍半矽氧烷、聚異丙基倍半矽氧烷、聚丁基倍半矽氧烷、聚第二丁基倍半矽氧烷、聚第三丁基倍半矽氧烷、聚苯基倍半矽氧烷、聚萘基倍半矽氧烷、聚苯乙烯基倍半矽氧烷及聚金鋼烷基倍半矽氧烷等。此等之中,宜為聚氫化倍半矽氧烷、聚甲基倍半矽氧烷、聚乙基倍半矽氧烷、聚第三丁基倍半矽氧烷、聚苯基倍半矽氧烷及聚苯乙烯基倍半矽氧烷,更宜為聚苯基倍半矽氧烷及聚苯乙烯基倍半矽氧烷。
聚倍半矽氧烷係亦可藉由特開2002-88157號公報及特開2002-88245號公報所示之公知的方法進行製造,例如,亦可藉由小西化學工業(股)等所市售者。
<金屬化合物>
金屬化合物係可以通式M(OR)n
(式中,M係屬於周期表第3族~14族的金屬元素,R表示碳數1~5之烷基或苯基,n係表示1~5之整數)所示之金屬烷氧化合物。此處,「金屬元素」謂3~13族之全部的元素及14族之鍺及錫。又,「周期表」謂IUPAC無機化學命名法改訂版(1989)之周期表。
金屬化合物之具體例可舉例如三甲氧基鋁、三乙氧基鋁、三正丙氧基鋁、三異丙氧基鋁、三正丁氧基鋁、三異丁氧基鋁、三第二丁氧基鋁、三第三丁氧基鋁、二異丙氧基鈷、三異丙氧基二鏑、三異丙氧基鉺、三異丙氧基銪、三乙氧基鐵、三異氧基鐵、三甲氧基鎵、三異丙氧基鎵、三正丙氧基鎵、三正丙氧基釓、四甲氧基鍺、四乙氧基鍺、四異丙氧基鍺、四正丙氧基鍺、四異丁氧基鍺、四正丁氧基鍺、四第二丁氧基鍺、四第三丁氧基鍺、四甲氧基鉿、四乙氧基鉿、四異丙氧基鉿、四第三丁氧基鉿、三異丙氧基銦、三乙氧基鑭、三異丙氧基鑭、二正丁氧基錳、五乙氧基鉬、五甲氧基鈮、五乙氧基鈮、五異丙氧基鈮、五正丙氧基鈮、五異丁氧基鈮、五正丁氧基鈮、五第二丁氧基鈮、三異丙氧基釹、三異丙氧基鐠、三異丙氧基鈧、三異丙氧基釤、四乙氧基錫、四異丙氧基錫、四正丁氧基錫、五甲氧基鉭、五乙氧基鉭、五異丙氧基鉭、五正丙氧基鉭、五異丁氧基鉭、五正丁氧基鉭、五第二丁氧基鉭、五
第三丁氧基鉭、四甲氧基鈦、四乙氧基鈦、四異丙氧基鈦、四正丙氧基鈦、四異丁氧基鈦、四正丁氧基鈦、四第二丁氧基鈦、四第三丁氧基鈦、五乙氧基鎢、五異丙氧基鎢、三乙氧基釔、三異丙氧基釔、三異丙氧基鐿、二乙氧基鋅、四甲氧基鋯、四乙氧基鋯、四異丙氧基鋯、四正丙氧基鋯、四異丙氧基鋯、四正丁氧基鋯及四第二丁氧基鋯、四第三丁氧基鋯。其中,宜為四甲氧基鍺、四乙氧基鍺、四異丙氧基鍺、四正丙氧基鍺、四異丁氧基鍺、四正丁氧基鍺、四第二丁氧基鍺、四第三丁氧基鍺、四第三丁氧基鉿、五乙氧基鉬、五乙氧基鈮、五正丙氧基鈮、五正丁氧基鈮、五第二丁氧基鈮、五甲氧基鉭、五乙氧基鉭、五異丙氧基鉭、五正丙氧基鉭、五異丁氧基鉭、五正丁氧基鉭、五第二丁氧基鉭、五第三丁氧基鉭、四甲氧基鈦、四乙氧基鈦、四異丙氧基鈦、四正丙氧基鈦、四異丁氧基鈦、四正丁氧基鈦、四第二丁氧基鈦、四第三丁氧基鈦、五乙氧基鎢、及五異丙氧基鎢,尤宜為四第三丁氧基鉿、五乙氧基鈮、五正丙氧基鈮、五正丁氧基鈮、五第二丁氧基鈮、五甲氧基鉭、五乙氧基鉭、五異丙氧基鉭、五正丙氧基鉭、五異丁氧基鉭、五正丁氧基鉭、五第二丁氧基鉭、五第三丁氧基鉭、四甲氧基鈦、四乙氧基鈦、四異丙氧基鈦、四正丙氧基鈦、四異丁氧基鈦、四正丁氧基鈦、四第二丁氧基鈦、四第三丁氧基鈦、五乙氧基鎢、及五異丙氧基
鎢。
本發明之微細圖型轉印材料係由聚倍半矽氧烷及含有金屬烷氧化物之樹脂組成物所構成。前述樹脂組成物之調整方法係可舉例如直接混合兩者之方法;或預先調製聚倍半矽氧烷及金屬烷氧化物之溶液後,進行混合之方法。
溶劑之具體例係可舉例如苯、甲苯及二甲苯等之芳香族烴類;二氯化甲烷及氯仿等之鹵化烴類;四氫呋喃、二乙基醚及二乙二醇二甲基醚等之醚類;丙酮、甲乙酮、3,5,5-三甲基-2-環己烯-1-酮及甲基異丁基酮等之酮類;醋酸甲酯、醋酸乙酯、醋酸異丙酯、醋酸正丙酯、醋酸丁酯、乙二醇單甲基醚乙醋酸、丙二醇單甲基醚乙醋酸、乙二醇單乙基醚乙醋酸、醋酸3-甲氧基丁酯、乙二醇單丁基醚乙醋酸、二乙二醇單乙基醚乙醋酸及二乙二醇單丁基醚乙醋酸等之酯類;二甲基亞碸及N-甲基吡咯烷酮等之極性有機溶劑;甲醇、乙醇及異丙醇等之醇類;
丙二醇單甲基醚、乙二醇單乙基醚、3-甲氧基丁醇、二乙二醇單乙基醚及二乙二醇單丁基醚等之醚醇類。此等係可一種單獨使用或組合兩種以上而使用。
本發明之微細圖型轉印材料係若使聚倍半矽氧烷為100重量份,對應金屬烷氧化物之金屬的氧化物換算成重量之時的重量,宜為0.1~300重量份,更宜為5~200重量份,尤宜為10~100重量份,進行混合而使用。
在上述範圍內係所形成之微細圖型安定,故佳。
[基板]
塗佈微細圖型轉印材料之基板係矽基板、鋁基板、玻璃基板、以濺鍍法等於表面形成金屬層或碳層之基板及玻璃基板製硬碟媒體之外,尚可使用聚醯胺樹脂薄膜、聚醯亞胺樹脂薄膜、聚對酞酸乙二酯樹脂薄膜、聚對萘酸乙二酯樹脂薄膜及聚矽氧樹脂薄膜。
[塗佈]
微細圖型轉印材料於基板之塗佈係亦可於大氣中實施
,亦可於氮氣、氦氣及氬氣等之惰性氣體環境下實施。其時,可於-10℃~200℃之範圍的溫度下實施。
微細圖型轉印材料於基板之塗佈係亦可於太陽光之下實施,亦可於螢光燈下或UV截斷螢光燈下實施。
微細圖型轉印材料於基板之塗佈方法係可舉例如使用噴墨印刷等之印刷機而印刷於基板上之方法,於基板上直
接滴下或噴霧轉印材料之方法;使基板浸漬於轉印材料溶液之後,靜置,或,浸漬後,以100 rpm~10000 rpm之旋轉速度較佳係以100 rpm~6000 rpm之旋轉速度使基板旋轉而於基板全面塗佈均一之轉印材料的膜之方法。其時,旋轉速度係可為任意之段數,亦可多段地改變。又,轉印材料係可塗佈於基板兩面,依需要而亦可僅塗佈於單面。
進行塗佈之膜厚係依照使用於奈米壓印成形之壓印形狀等,而可塗佈於0.01 nm至10 μm之任意的厚度。最適的膜厚係可研究塗佈步驟之條件而決定,亦可使用有限要素法等之模擬法而決定奈米壓印成形時之轉印材料的行為。此處,所謂「奈米壓印成形」謂壓住而轉印於刻入於模具之凹凸的線寬方法為數十nm~數百nm之圖型塗佈於基板上之樹脂材料之技術。
塗佈轉印材料後之基板係亦可以直接奈米壓印成形進行之微細圖型製造的步驟,依需要而放置於真空下、或空氣、氧氣、氫氣、氮氣、鹵素氣體、鹵化烴氣、烴氣、芳香族系有機化合物氣體、氦氣或氬氣等之氣體氣流下而進行乾燥及前處理等後,亦可於奈米壓印成形進行之微細圖型製造的步驟進行,其時,可於-10℃~300℃之任意的溫度下進行。
[微細圖型之製造]
奈米壓印成形進行之微細圖型之製造,係亦可於大氣中進行,亦可於真空下、或、氮氣、氦氣及氬氣等之惰性
氣體環境下實施。其時,可於-10℃~300℃之任意的溫度下進行。奈米壓印成形進行之微細圖型的製造係亦可於太陽光之下實施,亦可於螢光燈或除去紫外線波長之螢光燈下實施。
藉奈米壓印成形所形成之微細圖型的線寬係10 μm以下。
藉奈米壓印成形製造微細圖型後之基板係亦可直接於如下之步驟使用,依需要而在低壓水銀燈或高壓水銀燈照射下、紫外LED光之下而放置於真空下、或空氣、氧氣
、氫氣、氮氣、鹵素氣體、鹵化烴氣、烴氣、芳香族系有機化合物氣體、氦氣或氬氣等之氣體氣流下而進行乾燥及前處理等後,亦可於如下的步驟進行,其時,可於-10℃~300℃之任意的溫度下進行。
於微細圖型之製造所使用之模具(Mold)之材料係可舉例如鉭、鎳、鎢、矽及玻璃製者。於塗佈在基板上之轉印材料押住模具時之壓力係50 MPa~250 MPa,宜為100 MPa~200 MPa。
以下,使用實施例而詳細地說明本發明,但本發明係不限定於此等實施例。
使聚苯基倍半矽氧烷(商品名:PPSQ-T、小西化學工業(股)公司製)0.5 g溶解於丙二醇單甲基醚乙酸酯9.5 g。於其溶液5 g中室溫下、氮箱內滴下五乙氧基鉭0.32 g,振盪容器而混合。使其容器放置於氮箱內48小時後,以細孔徑0.2 μm之過濾膜過濾所得到之無色透明溶液,可得到樹脂組成物(以下,稱為「微細圖型轉印材料(a)」)溶液。使其溶液0.5 ml滴下於安置在旋塗器內之玻璃基板製硬碟媒體上,以500 rpm旋轉10秒,然後,以3000 rpm旋轉2秒鐘,進一步以5000 rpm旋轉20秒鐘,俾於硬碟媒體之單面形成微細圖型轉印材料(a)之薄膜。使用沖壓機而使所形成之薄膜押住Ni製模具(118MPa),俾於硬碟媒體上形成以微細圖型轉印材料(a)之微細圖型。裁切硬碟媒體,使用電場輻射型電子顯微鏡而觀察截面後,如圖1所示般,可知以微細圖型轉印材料(a)形成微細圖型。又,以微細圖型轉印材料(a)形成微細圖型之硬碟媒體以250℃熱處理1小時後,觀察截面後,可知如圖2所示般,所形成之微細圖型直接殘留。
又,圖係使用線寬120 nm及間隙寬60 nm之模具時的照片。所謂「線寬」謂被轉印而形成之凹凸的凸部之線寬,所謂「間隙寬」係謂被轉印而形成之凹凸的凹部之線寬。
以與實施例1相同之方法,於硬碟媒體上形成微細圖
型轉印材料(a)的薄膜。以160℃熱處理該硬碟媒體1小時後,室溫下,使用沖壓機而使薄膜押在Ni製模具上(118MPa),俾於硬碟媒體上形成以微細圖型轉印材料(a)之微細圖型。裁切硬碟媒體,觀察截面後,如圖3所示般,可知形成微細圖型。又,以微細圖型轉印材料(a)形成微細圖型之硬碟媒體進一步以250℃熱處理1小時後,觀察截面後,可知如圖4所示般,所形成之微細圖型係高溫之熱處理後直接殘留。
除使用五乙氧基鉭0.14 g之外,其餘係與實施例1及實施例2同樣地,調製微細圖型轉印材料(b)之溶液,進行微細圖型之形成及觀察。結果表示於表1中。
除使用五乙氧基鉭0.23 g之外,其餘係與實施例1及實施例2同樣地,調製微細圖型轉印材料(c)之溶液,進行微細圖型之形成及觀察。結果表示於表1中。
除使用五乙氧基鉭0.46 g以外,其餘係與實施例1及實施例2同樣地,調製微細圖型轉印材料(d)之溶液,進行微細圖型之形成及觀察。結果表示於表1中。
除使用五正丁氧基鉭0.12 g之外,其餘係與實施例1及實施例2同樣地,調製微細圖型轉印材料(e)之溶液,進行微細圖型之形成及觀察。結果表示於表1中。
除使用五乙氧基鎢0.09 g之外,其餘係與實施例1及實施例2同樣地,調製微細圖型轉印材料(f)之溶液,進行微細圖型之形成及觀察。結果表示於表1中。
除使用五乙氧基鎢0.15 g之外,其餘係與實施例1及實施例2同樣地,調製微細圖型轉印材料(g)之溶液,進行微細圖型之形成及觀察。結果表示於表1中。
除使用五乙氧基鎢0.20 g之外,其餘係與實施例1及實施例2同樣地,調製微細圖型轉印材料(h)之溶液,進行微細圖型之形成及觀察。結果表示於表1中。
使聚苯基倍半矽氧烷(商品名:PPSQ-T、小西化學工業(股)公司製)0.5 g溶解於丙二醇單甲基醚乙酸酯9.5 g。於其溶液(以下,稱為「微細圖型轉印材料(i)
」)0.5 ml滴下於安置在旋塗器內之玻璃基板製硬碟媒體上,其後以500 rpm旋轉10秒,然後,以3000 rpm旋轉2秒鐘,進一步以5000 rpm旋轉20秒鐘,俾於硬碟媒體形成樹脂組成物(i)之薄膜。使用沖壓機而使所形成之薄膜押在Ni製模具(118MPa),俾於硬碟媒體上以微細圖型轉印材料(i)形成微細圖型。裁切硬碟媒體,使用電場輻射型電子顯微鏡而觀察截面後,可知以微細圖型轉印材料(i)形成微細圖型。但,以250℃熱處理1小時後,觀察截面後,可知所形成之微細圖型係受熱處理而消失。結果表示於表1中
與比較例1同樣地,於硬碟媒體上形成微細圖型轉印材料(i)之薄膜。使該硬碟媒體以160℃熱處理1小時後,室溫下,使用沖壓機而使薄膜押在Ni製模具上(118MPa),俾於硬碟媒體上形成微細圖型。使用電場輻射型電子顯微鏡而觀察截面後,可知形成微細圖型。但,以250℃熱處理1小時後,同樣做法而觀察截面後,所形成之微細圖型係受熱處理而消失。結果表示於表1中。
○:可確認出微細圖型之形成
×:所形成之微細圖型消失
本發明之微細圖型轉印材料係耐熱性大幅地提高,可安定地保持奈米壓印成形之基板上的微細圖型形狀,故可廣泛地利用於半導體製造製程及磁直磁性記錄方式的圖型媒體製造製程等。
圖1係表示實施例1之微細圖型轉印材料(a)所形成之微細圖型的照片。
圖2係表示使實施例1之微細圖型轉印材料(a)所形成之微細圖型進一步進行熱處理後的照片。
圖3係表示以實施例2經熱處理之微細圖型轉印材料(a)所形成之微細圖型的照片。
圖4係表示以實施例2經熱處理之微細圖型轉印材料(a)所形成之微細圖型進一步進行熱處理後的照片。
Claims (4)
- 一種微細圖型轉印材料,其係使用於奈米壓印成形,其特徵為含有聚倍半矽氧烷化合物之有機矽化合物與周期表之第3族至第14族的金屬化合物。
- 如申請專利範圍第1項之微細圖型轉印材料,其中該金屬化合物為以下述式(1)所示;M(OR)n 式(1)式中,M係屬於周期表第3族~14族的金屬元素,R表示碳數1~5之烷基或苯基,n係表示1~5之整數。
- 如申請專利範圍第2項之微細圖型轉印材料,其中前述式(1)中之M為Nb、Ti、Ta、Hf或W,R為甲基、乙基、丙基、異丙基、正丁基、第二丁基或第三丁基。
- 如申請專利範圍第1~3項中任一項之微細圖型轉印材料,其中該有機矽化合物為聚苯基倍半矽氧烷或聚苯乙烯基倍半矽氧烷,該金屬化合物為四乙氧基鈦、五乙氧基鉭、五正丁氧基鉭或五乙氧基鎢。
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JP6099539B2 (ja) * | 2013-10-09 | 2017-03-22 | 株式会社トクヤマ | パターンの形成方法 |
CN108897462B (zh) * | 2018-06-30 | 2021-05-14 | 广州国显科技有限公司 | 触控面板及其制作方法、显示装置 |
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JP3381945B2 (ja) * | 1992-10-05 | 2003-03-04 | 日本板硝子株式会社 | 基板上に微細な凹凸パターンを形成する方法 |
US7301595B2 (en) | 1997-10-01 | 2007-11-27 | Sanyo Electric Co., Ltd. | Vertically aligned liquid crystal display |
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CN101606101A (zh) | 2009-12-16 |
EP2111566A2 (en) | 2009-10-28 |
JP5189772B2 (ja) | 2013-04-24 |
ATE478360T1 (de) | 2010-09-15 |
EP2111566B1 (en) | 2010-08-18 |
KR101095797B1 (ko) | 2011-12-21 |
KR20090128409A (ko) | 2009-12-15 |
WO2008099903A2 (en) | 2008-08-21 |
WO2008099903A3 (en) | 2008-12-24 |
US8476361B2 (en) | 2013-07-02 |
CN101606101B (zh) | 2012-11-21 |
TW200904856A (en) | 2009-02-01 |
US20100093907A1 (en) | 2010-04-15 |
DE602008002222D1 (de) | 2010-09-30 |
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