CN101558472B - 硅点形成方法及装置以及带硅点和绝缘膜的基板的形成方法及装置 - Google Patents

硅点形成方法及装置以及带硅点和绝缘膜的基板的形成方法及装置 Download PDF

Info

Publication number
CN101558472B
CN101558472B CN2007800416265A CN200780041626A CN101558472B CN 101558472 B CN101558472 B CN 101558472B CN 2007800416265 A CN2007800416265 A CN 2007800416265A CN 200780041626 A CN200780041626 A CN 200780041626A CN 101558472 B CN101558472 B CN 101558472B
Authority
CN
China
Prior art keywords
plasma
substrate
silicon
indoor
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800416265A
Other languages
English (en)
Chinese (zh)
Other versions
CN101558472A (zh
Inventor
东名敦志
可贵裕和
高桥英治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Publication of CN101558472A publication Critical patent/CN101558472A/zh
Application granted granted Critical
Publication of CN101558472B publication Critical patent/CN101558472B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/586—Nitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2007800416265A 2006-11-08 2007-10-29 硅点形成方法及装置以及带硅点和绝缘膜的基板的形成方法及装置 Expired - Fee Related CN101558472B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP303153/2006 2006-11-08
JP2006303153A JP4997925B2 (ja) 2006-11-08 2006-11-08 シリコンドット形成方法及び装置並びにシリコンドット及び絶縁膜付き基板の形成方法及び装置
PCT/JP2007/070992 WO2008056556A1 (en) 2006-11-08 2007-10-29 Method and device for forming silicon dot and silicon dot and method and device for forming substrate with insulating film

Publications (2)

Publication Number Publication Date
CN101558472A CN101558472A (zh) 2009-10-14
CN101558472B true CN101558472B (zh) 2011-06-08

Family

ID=39364376

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800416265A Expired - Fee Related CN101558472B (zh) 2006-11-08 2007-10-29 硅点形成方法及装置以及带硅点和绝缘膜的基板的形成方法及装置

Country Status (5)

Country Link
US (1) US20120211351A1 (https=)
JP (1) JP4997925B2 (https=)
KR (1) KR101043009B1 (https=)
CN (1) CN101558472B (https=)
WO (1) WO2008056556A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102044569B (zh) * 2009-10-23 2013-09-11 中芯国际集成电路制造(上海)有限公司 电容器及其制造方法
CN102891134A (zh) * 2011-07-18 2013-01-23 中国科学院微电子研究所 一种基于mos电容的等离子体损伤测试结构
KR20140097244A (ko) 2011-11-08 2014-08-06 토소우 에스엠디, 인크 특별한 표면 처리를 하고 양호한 입자 성능을 가진 실리콘 스퍼터링 타겟 및 그 제조 방법들
WO2014148490A1 (ja) * 2013-03-22 2014-09-25 株式会社日立国際電気 基板処理装置、及び半導体装置の製造方法
JP6254036B2 (ja) * 2014-03-31 2017-12-27 三菱重工業株式会社 三次元積層装置及び三次元積層方法
JP6541374B2 (ja) * 2014-07-24 2019-07-10 東京エレクトロン株式会社 基板処理装置
US10096495B2 (en) 2014-12-26 2018-10-09 Tokyo Electron Limited Substrate processing apparatus
KR102637922B1 (ko) * 2016-03-10 2024-02-16 에이에스엠 아이피 홀딩 비.브이. 플라즈마 안정화 방법 및 이를 이용한 증착 방법
JP6967954B2 (ja) 2017-12-05 2021-11-17 東京エレクトロン株式会社 排気装置、処理装置及び排気方法
DE102020117347A1 (de) 2020-07-01 2022-01-05 VON ARDENNE Asset GmbH & Co. KG Magnetronanordnung
JP7500450B2 (ja) * 2021-01-21 2024-06-17 東京エレクトロン株式会社 プラズマ処理装置
KR102795097B1 (ko) * 2023-07-31 2025-04-15 오스 주식회사 단일 챔버형 기판 처리 장치 및 이를 이용한 기판 처리 방법
KR102783296B1 (ko) * 2023-07-31 2025-03-19 오스 주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법
KR102924590B1 (ko) * 2024-08-26 2026-02-09 (주)울텍 마이크로파 열처리 모듈을 포함하는 원자 스케일 처리 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03170667A (ja) * 1989-11-29 1991-07-24 Shimadzu Corp スパッタリング装置
JP3197557B2 (ja) * 1990-11-27 2001-08-13 株式会社半導体エネルギー研究所 被膜形成方法
JP3406959B2 (ja) 1992-10-16 2003-05-19 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による堆積膜形成方法
JPH09102596A (ja) * 1995-10-04 1997-04-15 Fujitsu Ltd 量子ドットの製造方法及び量子ドット装置
JPH10140342A (ja) * 1996-11-05 1998-05-26 Canon Inc スパッタ装置及びその装置による基板の成膜方法
JPH11271553A (ja) * 1998-03-23 1999-10-08 Hitachi Cable Ltd 光導波路用ガラス膜の形成方法及びその装置
JP3812232B2 (ja) * 1998-10-23 2006-08-23 日新電機株式会社 多結晶シリコン薄膜形成方法及び薄膜形成装置
US20020015855A1 (en) * 2000-06-16 2002-02-07 Talex Sajoto System and method for depositing high dielectric constant materials and compatible conductive materials
JP2002008983A (ja) 2000-06-16 2002-01-11 Hitachi Cable Ltd 化合物半導体ウェハの製造方法
JP2003201562A (ja) * 2002-01-11 2003-07-18 Nippon Telegr & Teleph Corp <Ntt> 成膜モニタリング方法
JP3773189B2 (ja) 2002-04-24 2006-05-10 独立行政法人科学技術振興機構 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置
US20040129223A1 (en) * 2002-12-24 2004-07-08 Park Jong Hyurk Apparatus and method for manufacturing silicon nanodot film for light emission
JP2006176859A (ja) * 2004-12-24 2006-07-06 Canon Anelva Corp シリコンナノ結晶構造体の作製方法
JP2006286536A (ja) * 2005-04-04 2006-10-19 Ebara Corp プラズマ生成方法、誘導結合型プラズマ源、およびプラズマ処理装置

Also Published As

Publication number Publication date
KR101043009B1 (ko) 2011-06-21
US20120211351A1 (en) 2012-08-23
CN101558472A (zh) 2009-10-14
KR20090086407A (ko) 2009-08-12
JP4997925B2 (ja) 2012-08-15
WO2008056556A1 (en) 2008-05-15
JP2008124078A (ja) 2008-05-29

Similar Documents

Publication Publication Date Title
CN101558472B (zh) 硅点形成方法及装置以及带硅点和绝缘膜的基板的形成方法及装置
JP4922335B2 (ja) 基板処理装置
US20040134429A1 (en) Film forming method and film forming apparatus
WO2004107431A1 (ja) 絶縁膜の改質方法
KR20060066152A (ko) 반도체 제조방법 및 반도체 제조장치
CN102948255B (zh) 密封膜形成方法和密封膜形成装置
JP2004343031A (ja) 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法
JP2004343031A5 (https=)
JP3574734B2 (ja) 半導体デバイスの製造方法
KR20210032473A (ko) 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
JP6484388B2 (ja) 半導体装置の製造方法、プログラム及び基板処理装置
JP4497068B2 (ja) シリコンドット形成方法及びシリコンドット形成装置
US20090233429A1 (en) Semiconductor device manufacturing method and substrate processing apparatus
US5478400A (en) Apparatus for fabricating semiconductor devices
CN1614739A (zh) 处理装置及方法
US20070056846A1 (en) Silicon dot forming method and silicon dot forming apparatus
JP2000058538A (ja) 半導体装置の層間絶縁膜の形成方法
US9691593B2 (en) Plasma processing device and plasma processing method
JP5321468B2 (ja) シリコンドット形成方法
JPWO2008018419A1 (ja) 半導体製造装置及び半導体製造方法
JP2018528619A (ja) ゲルマニウム含有半導体デバイスおよび形成方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110608

Termination date: 20141029

EXPY Termination of patent right or utility model