CN101548241B - 低蚀刻性光刻胶清洗剂 - Google Patents
低蚀刻性光刻胶清洗剂 Download PDFInfo
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- CN101548241B CN101548241B CN200780044674XA CN200780044674A CN101548241B CN 101548241 B CN101548241 B CN 101548241B CN 200780044674X A CN200780044674X A CN 200780044674XA CN 200780044674 A CN200780044674 A CN 200780044674A CN 101548241 B CN101548241 B CN 101548241B
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- Prior art keywords
- ether
- clean
- out system
- glycol
- mass percent
- Prior art date
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 20
- 238000004140 cleaning Methods 0.000 title abstract description 14
- 239000000203 mixture Substances 0.000 title abstract description 4
- -1 alkyl glycol aryl ether Chemical class 0.000 claims abstract description 27
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims abstract description 25
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 22
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims abstract description 20
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims abstract description 17
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 16
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 7
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 6
- MHDVGSVTJDSBDK-UHFFFAOYSA-N dibenzylether Substances C=1C=CC=CC=1COCC1=CC=CC=C1 MHDVGSVTJDSBDK-UHFFFAOYSA-N 0.000 claims abstract description 5
- PICKZMGDVSSGSC-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethoxybenzene Chemical compound C=1C=CC=CC=1OCCOCCOC1=CC=CC=C1 PICKZMGDVSSGSC-UHFFFAOYSA-N 0.000 claims abstract description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N dimethyl sulfoxide Natural products CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 22
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 claims description 14
- 238000005260 corrosion Methods 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Substances [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 9
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 125000001153 fluoro group Chemical group F* 0.000 claims description 8
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000006184 cosolvent Substances 0.000 claims description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 7
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 7
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 7
- TXFPEBPIARQUIG-UHFFFAOYSA-N 4'-hydroxyacetophenone Chemical compound CC(=O)C1=CC=C(O)C=C1 TXFPEBPIARQUIG-UHFFFAOYSA-N 0.000 claims description 6
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 claims description 6
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 6
- 150000003462 sulfoxides Chemical class 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical group CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 5
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 claims description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 4
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 4
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 150000008064 anhydrides Chemical class 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 4
- 150000001733 carboxylic acid esters Chemical class 0.000 claims description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 4
- 150000002989 phenols Chemical group 0.000 claims description 4
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 4
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 4
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 4
- 150000003457 sulfones Chemical class 0.000 claims description 4
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 3
- 229960004050 aminobenzoic acid Drugs 0.000 claims description 3
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 3
- 229940074391 gallic acid Drugs 0.000 claims description 3
- 235000004515 gallic acid Nutrition 0.000 claims description 3
- 229920000570 polyether Polymers 0.000 claims description 3
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 3
- NYCCIHSMVNRABA-UHFFFAOYSA-N 1,3-diethylimidazolidin-2-one Chemical compound CCN1CCN(CC)C1=O NYCCIHSMVNRABA-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- PUNWJRNLMGKRDH-UHFFFAOYSA-N 1-phenoxypropan-2-yloxybenzene Chemical compound C=1C=CC=CC=1OC(C)COC1=CC=CC=C1 PUNWJRNLMGKRDH-UHFFFAOYSA-N 0.000 claims description 2
- JYBQZRNPJUQRMW-UHFFFAOYSA-N 1-phenylmethoxypropan-2-yloxymethylbenzene Chemical compound C=1C=CC=CC=1COC(C)COCC1=CC=CC=C1 JYBQZRNPJUQRMW-UHFFFAOYSA-N 0.000 claims description 2
- JQCWLRHNAHIIGW-UHFFFAOYSA-N 2,8-dimethylnonan-5-one Chemical compound CC(C)CCC(=O)CCC(C)C JQCWLRHNAHIIGW-UHFFFAOYSA-N 0.000 claims description 2
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 claims description 2
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 2
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 claims description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 claims description 2
- QIQSRDSFZFNZTJ-UHFFFAOYSA-N 2-phenoxypropan-2-yloxybenzene Chemical compound C=1C=CC=CC=1OC(C)(C)OC1=CC=CC=C1 QIQSRDSFZFNZTJ-UHFFFAOYSA-N 0.000 claims description 2
- GNKZMNRKLCTJAY-UHFFFAOYSA-N 4'-Methylacetophenone Chemical compound CC(=O)C1=CC=C(C)C=C1 GNKZMNRKLCTJAY-UHFFFAOYSA-N 0.000 claims description 2
- NTPLXRHDUXRPNE-UHFFFAOYSA-N 4-methoxyacetophenone Chemical compound COC1=CC=C(C(C)=O)C=C1 NTPLXRHDUXRPNE-UHFFFAOYSA-N 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- GQRDWFDDWOBCLS-UHFFFAOYSA-N C1(=CC=CC=C1)OCC(=S)OCCO Chemical compound C1(=CC=CC=C1)OCC(=S)OCCO GQRDWFDDWOBCLS-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 2
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- 125000003158 alcohol group Chemical group 0.000 claims description 2
- 150000008052 alkyl sulfonates Chemical class 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- 125000001743 benzylic group Chemical group 0.000 claims description 2
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 claims description 2
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- 125000005594 diketone group Chemical group 0.000 claims description 2
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 claims description 2
- PKHMTIRCAFTBDS-UHFFFAOYSA-N hexanoyl hexanoate Chemical compound CCCCCC(=O)OC(=O)CCCCC PKHMTIRCAFTBDS-UHFFFAOYSA-N 0.000 claims description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 2
- LZXXNPOYQCLXRS-UHFFFAOYSA-N methyl 4-aminobenzoate Chemical compound COC(=O)C1=CC=C(N)C=C1 LZXXNPOYQCLXRS-UHFFFAOYSA-N 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 claims description 2
- FTDXCHCAMNRNNY-UHFFFAOYSA-N phenol Chemical compound OC1=CC=CC=C1.OC1=CC=CC=C1 FTDXCHCAMNRNNY-UHFFFAOYSA-N 0.000 claims description 2
- 229960003742 phenol Drugs 0.000 claims description 2
- 235000010388 propyl gallate Nutrition 0.000 claims description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- 239000002184 metal Substances 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 16
- 239000010949 copper Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001092 metal group alloy Inorganic materials 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 125000004400 (C1-C12) alkyl group Chemical group 0.000 abstract 1
- YQCBMOPLNSIVRW-UHFFFAOYSA-N 1-(1-phenoxypropan-2-yloxy)propan-2-yloxybenzene Chemical compound C=1C=CC=CC=1OC(C)COC(C)COC1=CC=CC=C1 YQCBMOPLNSIVRW-UHFFFAOYSA-N 0.000 abstract 1
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 abstract 1
- KJBPYIUAQLPHJG-UHFFFAOYSA-N 1-phenylmethoxypropan-2-ol Chemical compound CC(O)COCC1=CC=CC=C1 KJBPYIUAQLPHJG-UHFFFAOYSA-N 0.000 abstract 1
- ZUAURMBNZUCEAF-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethanol Chemical compound OCCOCCOC1=CC=CC=C1 ZUAURMBNZUCEAF-UHFFFAOYSA-N 0.000 abstract 1
- LCVQGUBLIVKPAI-UHFFFAOYSA-N 2-(2-phenoxypropoxy)propan-1-ol Chemical compound OCC(C)OCC(C)OC1=CC=CC=C1 LCVQGUBLIVKPAI-UHFFFAOYSA-N 0.000 abstract 1
- CUZKCNWZBXLAJX-UHFFFAOYSA-N 2-phenylmethoxyethanol Chemical compound OCCOCC1=CC=CC=C1 CUZKCNWZBXLAJX-UHFFFAOYSA-N 0.000 abstract 1
- REVVFBIOIFGJRH-JTQLQIEISA-N 4-[[(2s)-1-hydroxybutan-2-yl]amino]benzaldehyde Chemical compound CC[C@@H](CO)NC1=CC=C(C=O)C=C1 REVVFBIOIFGJRH-JTQLQIEISA-N 0.000 abstract 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 abstract 1
- 229960005323 phenoxyethanol Drugs 0.000 abstract 1
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 2
- OHBQPCCCRFSCAX-UHFFFAOYSA-N 1,4-Dimethoxybenzene Chemical compound COC1=CC=C(OC)C=C1 OHBQPCCCRFSCAX-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- PUTCXBJUWNRWJH-UHFFFAOYSA-N cyclohexa-3,5-diene-1,1,2-triol Chemical compound OC1C=CC=CC1(O)O PUTCXBJUWNRWJH-UHFFFAOYSA-N 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KVFLEGRBTUDZRD-UHFFFAOYSA-N 1-(2-hydroxyethylsulfanyl)-3-sulfanylpropan-2-ol Chemical compound OCCSCC(O)CS KVFLEGRBTUDZRD-UHFFFAOYSA-N 0.000 description 1
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 description 1
- VAXCXSDAWONRLI-UHFFFAOYSA-N 2,3-dihydroxypropyl hydrogen sulfate Chemical compound OCC(O)COS(O)(=O)=O VAXCXSDAWONRLI-UHFFFAOYSA-N 0.000 description 1
- 0 CC1C=*C(*=O)=CC1 Chemical compound CC1C=*C(*=O)=CC1 0.000 description 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- FNJSWIPFHMKRAT-UHFFFAOYSA-N Monomethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(O)=O FNJSWIPFHMKRAT-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 241001597008 Nomeidae Species 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种低蚀刻性的光刻胶清洗剂，其特征在于含有：季胺氢氧化物，烷基二醇芳基醚或其衍生物，和如式I所示的苯乙酮或其衍生物；
式I其中，R5和R6为H、羟基、C1～C2的烷基、C1～C2的烷氧基或C1～C2的羟烷基，所述的烷基二醇芳基醚或其衍生物为乙二醇单苯基醚、丙二醇单苯基醚、异丙二醇单苯基醚、二乙二醇单苯基醚、二丙二醇单苯基醚、二异丙二醇单苯基醚、乙二醇单苄基醚、丙二醇单苄基醚、乙二醇二苯基醚、丙二醇二苯基醚、异丙二醇二苯基醚、二乙二醇二苯基醚、二丙二醇二苯基醚、二异丙二醇二苯基醚、乙二醇二苄基醚或丙二醇二苄基醚。本发明的低蚀刻性光刻胶清洗剂可用于去除金属、金属合金或电介质基材上的光刻胶(光阻)和其它残留物，同时对于二氧化硅、铜等金属以及低k材料等具有较低的蚀刻速率，在半导体晶片清洗等微电子领域具有良好的应用前景。
Description
技术领域
本发明涉及一种低蚀刻性光刻胶清洗剂。
技术背景
在通常的半导体制造工艺中，通过在二氧化硅、Cu(铜)等金属以及低k材料等表面上形成光刻胶的掩模，曝光后利用湿法或干法刻蚀进行图形转移。低温快速的清洗工艺是半导体晶片制造工艺发展的重要方向。另外，在半导体晶片进行光刻胶的化学清洗过程中，较高pH的清洗剂会造成晶片基材的腐蚀。特别是在利用化学清洗剂除去金属刻蚀残余物的过程中，金属腐蚀是较为普遍而且非常严重的问题，往往导致晶片良率的显著降低。
专利文献WO04059700公开了一种碱性清洗剂，由四甲基氢氧化铵(TMAH)、N-甲基吗啡啉N-氧化物(MO)、水和2-巯基苯并咪唑(MBI)等组成。将晶片进入该清洗剂中，于70℃下浸没15～60min，可除去金属和电介质基材上的光刻胶。其清洗温度较高，且清洗速度相对较慢，不利于提高半导体晶片的清洗效率。
专利文献JP1998239865公开了一种碱性清洗剂，由四甲基氢氧化铵(TMAH)、二甲基亚砜(DMSO)、1，3’-二甲基-2-咪唑烷酮(DMI)和水等组成。将晶片进入该清洗剂中，于50～100℃下，可除去金属和电介质基材上的20μm以上的厚膜光刻胶。其较高的清洗温度会造成半导体晶片基材的腐蚀。
专利文献JP200493678公开了一种碱性清洗剂，由四甲基氢氧化铵 (TMAH)、N-甲基吡咯烷酮(NMP)、水或甲醇等组成。将晶片进入该清洗剂中，于25～80℃下，可除去金属和电介质基材上的光刻胶。该清洗剂随清洗温度的升高，将使得半导体晶片基材的腐蚀更严重。
专利文献JP2001215736公开了一种碱性清洗剂，由四甲基氢氧化铵(TMAH)、二甲基亚砜(DMSO)、乙二醇(EG)和水等组成。将晶片进入该清洗剂中，于50～70℃下，可除去金属和电介质基材上的光刻胶。其较高的清洗温度会造成半导体晶片基材的腐蚀。
发明概要
本发明的目的是公开一种低蚀刻性的光刻胶清洗剂。
本发明的低蚀刻性光刻胶清洗剂含有：季胺氢氧化物，如式I所示的烷基二醇芳基醚或其衍生物，和如式II所示的苯乙酮或其衍生物；
其中，R1为含6～18个碳原子的芳基；R2为H、C1～C18的烷基或含6～18个碳原子的芳基；m＝2～6；n＝1～6；R5和R6为H、羟基、C1～C2的烷基、C1～C2的烷氧基或C1～C2的羟烷基。
本发明中，所述的季铵氢氧化物较佳的选自下列中的一个或多个：四甲基氢氧化铵(TMAH)、四乙基氢氧化铵、四丙基氢氧化铵、四丁基氢氧化铵、三甲基乙基氢氧化铵和三甲基苯基氢氧化铵。其中，优选四甲基氢氧化铵。所述的季铵氢氧化物的含量较佳的为质量百分比0.1～10％，更佳的为质 量百分比0.1～5％。
本发明中，所述的烷基二醇芳基醚或其衍生物较佳的为乙二醇单苯基醚(EGMPE)、丙二醇单苯基醚(PGMPE)、异丙二醇单苯基醚、二乙二醇单苯基醚、二丙二醇单苯基醚、二异丙二醇单苯基醚、乙二醇单苄基醚、丙二醇单苄基醚、乙二醇二苯基醚、丙二醇二苯基醚、异丙二醇二苯基醚、二乙二醇二苯基醚、二丙二醇二苯基醚、二异丙二醇二苯基醚、乙二醇二苄基醚或丙二醇二苄基醚。其中，优选乙二醇单苯基醚、丙二醇单苯基醚或异丙二醇单苯基醚。所述的烷基二醇芳基醚或其衍生物的含量较佳的为质量百分比0.1～99.8％。
本发明中，所述的苯乙酮或其衍生物较佳的为苯乙酮、对甲基苯乙酮、对羟基苯乙酮、对甲氧基苯乙酮、对二甲氧基苯乙酮或对二羟基苯乙酮。其中，优选苯乙酮、对羟基苯乙酮或对二羟基苯乙酮。所述的苯乙酮或其衍生物的含量较佳的为质量百分比0.1～95％。
本发明中，所述的清洗剂还可含有水、共溶剂、表面活性剂和缓蚀剂中的一种或几种。
本发明中，所述的水的含量较佳的为小于或等于质量百分比20％，更佳的为小于或等于质量百分比10％。
本发明中，所述的共溶剂较佳的为醇、亚砜、砜、酰胺、吡咯烷酮、咪唑烷酮、烷基二醇单烷基醚、烷基酮或环烷基酮。所述的共溶剂的含量较佳的为小于或等于质量百分比99.7％。
其中，所述的醇较佳的为丙醇、异丙醇、丁醇、环己醇、二丙酮醇、1-硫代丙三醇、3-(2-氨基苯基硫代)-2-羟丙基硫醇或3-(2-羟乙基硫代)-2-羟丙基硫醇；所述的亚砜较佳的为二甲基亚砜、二乙基亚砜或甲乙基亚砜； 所述的砜较佳的为甲基砜、乙基砜、苯基砜或环丁砜；所述的酰胺较佳的为甲酰胺、乙酰胺、N，N-二甲基甲酰胺(DMF)或N，N-二甲基乙酰胺(DMAc)；所述的吡咯烷酮较佳的为2-吡咯烷酮、N-甲基吡咯烷酮(NMP)或N-乙基吡咯烷酮；所述的咪唑烷酮较佳的为2-咪唑烷酮(MI)、1，3-二甲基-2-咪唑烷酮(DMI)或1，3-二乙基-2-咪唑烷酮；所述的烷基二醇单烷基醚较佳的为乙二醇单甲醚、乙二醇单乙醚、乙二醇单丁醚、二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丁醚、三乙二醇单甲醚、三乙二醇单乙醚、丙二醇单甲醚、丙二醇单乙醚、丙二醇单丁醚、二丙二醇单甲醚、二丙二醇单乙醚、二丙二醇单丁醚、三丙二醇单甲醚、三丙二醇单乙醚或三丙二醇单丁醚；所述的烷基酮或环烷基酮较佳的为丙酮、丁酮(MIBK)、戊酮、异戊酮、异佛二酮或环己酮。其中，优选二甲基亚砜、环丁砜、N，N-二甲基甲酰胺、N，N-二甲基乙酰胺、2-吡咯烷酮、N-甲基吡咯烷酮、2-咪唑烷酮(MI)、1，3-二甲基-2-咪唑烷酮、乙二醇单甲醚、二乙二醇单甲醚、丙二醇单甲醚或二丙二醇单甲醚。
本发明中，所述的表面活性剂较佳的为含羟基聚醚、聚乙烯醇(PVA)、聚乙烯吡咯烷酮、聚氧乙烯(POE)、聚硅氧烷(PSOA)、氟代聚乙烯醇、氟代聚乙烯吡咯烷酮、氟代聚氧乙烯、氟代聚硅氧烷、硅酸盐或烷基磺酸盐。其中，优选含羟基聚醚。所述的表面活性剂的含量较佳的为小于或等于质量百分比10％，更佳的为小于或等于质量百分比3％。
本发明中，所述的缓蚀剂较佳的为酚类，羧酸、羧酸酯类，酸酐类，或膦酸、膦酸酯类化合物。所述的缓蚀剂的含量较佳的为小于或等于质量百分比10％，更佳的为小于或等于质量百分比3％。
其中，所述的酚类较佳的为苯酚、1，2-二羟基苯酚、对羟基苯酚或连苯 三酚；所述的羧酸、羧酸酯类较佳的为苯甲酸、对氨基苯甲酸(PABA)、对氨基苯甲酸甲酯、邻苯二甲酸(PA)、间苯二甲酸、邻苯二甲酸甲酯、没食子酸(GA)或没食子酸丙酯；所述的酸酐类较佳的为乙酸酐、己酸酐、马来酸酐或聚马来酸酐；所述的磷酸、磷酸酯类较佳的为1，3-(羟乙基)-2，4，6-三膦酸(HEDPA)、氨基三亚甲基膦酸(ATMP)或2-膦酸丁烷-1，2，4-三羧酸(PBTCA)。其中，优选1，2-二羟基苯酚、连苯三酚、邻苯二甲酸。
本发明的清洗剂由上述组分简单均匀混合，即可制得。
本发明的积极进步效果在于：本发明的清洗剂可用于除去金属、金属合金或电介质基材上的光刻胶(光阻)和其它残留物，同时对于二氧化硅、Cu(铜)等金属以及低k材料等具有较低的蚀刻速率，在半导体晶片清洗等微电子领域具有良好的应用前景。
发明内容
下面通过实施例的方式进一步说明本发明，但并不因此将本发明限制在所述的实施例范围之中。
实施例1～54低蚀刻性光刻胶清洗剂
表1给出了低蚀刻性光刻胶清洗剂实施例1～54的配方，按表1中所列组分及其含量，简单混合均匀，即制得各实施例的清洗剂。
表1低蚀刻性光刻胶清洗剂实施例1～54
效果实施例
表2给出了对比清洗剂1和清洗剂1～4的配方，按表2中所列组分及其含量，简单混合均匀，即制得各清洗剂。
表2对比清洗剂1和清洗剂1～4
将对比清洗剂1和清洗剂1～4用于清洗空白Cu晶片和含有光刻胶的晶片，测试其对金属Cu的腐蚀性及其对厚膜光刻胶的清洗能力，结果如表3所示。
表3对比清洗剂1和清洗剂1～4
对空白Cu晶片蚀刻速率及其对光刻胶的清洗能力
在半导体晶片清洗工艺中，若金属蚀刻速率小于或等于2.0A/min，则说明金属缓蚀剂具有良好的腐蚀抑制作用。从表3可以看出，乙(丙)二醇单芳基醚及其衍生物可以显著降低空白Cu晶片的蚀刻速率，它们对于金属Cu具有良好的腐蚀抑制作用；但乙二醇醚加入量较多时，要完全去除光阻材料需要较长的时间，选择合适的共溶剂有利于光阻材料的去除。综上所述，本发明的清洗剂具有良好的清洗能力，同时对二氧化硅、铜等金属以及低k材料等具有较低的蚀刻速率。
Claims (28)
1.一种低蚀刻性的光刻胶清洗剂，其特征在于含有：水、季铵氢氧化物，烷基二醇芳基醚或其衍生物，和如式I所示的苯乙酮或其衍生物；
其中，R5和R6为H、羟基、C1～C2的烷基、C1～C2的烷氧基或C1～C2的羟烷基，其中：所述的烷基二醇芳基醚或其衍生物为乙二醇单苯基醚、丙二醇单苯基醚、异丙二醇单苯基醚、二乙二醇单苯基醚、二丙二醇单苯基醚、二异丙二醇单苯基醚、乙二醇单苄基醚、丙二醇单苄基醚、乙二醇二苯基醚、丙二醇二苯基醚、异丙二醇二苯基醚、二乙二醇二苯基醚、二丙二醇二苯基醚、二异丙二醇二苯基醚、乙二醇二苄基醚或丙二醇二苄基醚，其中，所述的水的含量为小于或等于质量百分比20％。
2.如权利要求1所述的清洗剂，其特征在于：所述的季铵氢氧化物选自下列中的一个或多个：四甲基氢氧化铵、四乙基氢氧化铵、四丙基氢氧化铵、四丁基氢氧化铵、三甲基乙基氢氧化铵和三甲基苯基氢氧化铵。
3.如权利要求1所述的清洗剂，其特征在于：所述的季铵氢氧化物的含量为质量百分比0.1～10％。
4.如权利要求3所述的清洗剂，其特征在于：所述的含量为质量百分比0.1～5％。
5.如权利要求1所述的清洗剂，其特征在于：所述的烷基二醇芳基醚或其衍生物的含量为质量百分比0.1～99.8％。
6.如权利要求1所述的清洗剂，其特征在于：所述的苯乙酮或其衍生物为苯乙酮、对甲基苯乙酮、对羟基苯乙酮或对甲氧基苯乙酮。
7.如权利要求1所述的清洗剂，其特征在于：所述的苯乙酮或其衍生物的含量为质量百分比0.1～95％。
8.如权利要求1所述的清洗剂，其特征在于：所述的清洗剂还含有共溶剂、表面活性剂和缓蚀剂中的一种或几种。
9.如权利要求1所述的清洗剂，其特征在于：所述的水的含量为小于或等于质量百分比10％。
10.如权利要求8所述的清洗剂，其特征在于：所述的共溶剂为醇、亚砜、砜、酰胺、吡咯烷酮、咪唑烷酮、烷基二醇单烷基醚、烷基酮或环烷基酮。
11.如权利要求8所述的清洗剂，其特征在于：所述的共溶剂的含量为小于或等于质量百分比99.7％。
12.如权利要求10所述的清洗剂，其特征在于：所述的醇为丙醇、异丙醇、丁醇或环己醇。
13.如权利要求10所述的清洗剂，其特征在于：所述的亚砜为二甲基亚砜、二乙基亚砜或甲乙基亚砜。
14.如权利要求10所述的清洗剂，其特征在于：所述的砜为环丁砜。
15.如权利要求10所述的清洗剂，其特征在于：所述的酰胺为甲酰胺、乙酰胺、N，N-二甲基甲酰胺或N，N-二甲基乙酰胺。
16.如权利要求10所述的清洗剂，其特征在于：所述的吡咯烷酮为2-吡咯烷酮、N-甲基吡咯烷酮或N-乙基吡咯烷酮。
17.如权利要求10所述的清洗剂，其特征在于：所述的咪唑烷酮为2-咪唑烷酮、1，3-二甲基-2-咪唑烷酮或1，3-二乙基-2-咪唑烷酮。
18.如权利要求10所述的清洗剂，其特征在于：所述的烷基二醇单烷基醚为乙二醇单甲醚、乙二醇单乙醚、乙二醇单丁醚、二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丁醚、三乙二醇单甲醚、三乙二醇单乙醚、丙二醇单甲醚、丙二醇单乙醚、丙二醇单丁醚、二丙二醇单甲醚、二丙二醇单乙醚、二丙二醇单丁醚、三丙二醇单甲醚、三丙二醇单乙醚或三丙二醇单丁醚。
19.如权利要求10所述的清洗剂，其特征在于：所述的烷基酮或环烷基酮为丙酮、丁酮、戊酮、异戊酮、异佛二酮或环己酮。
20.如权利要求8所述的清洗剂，其特征在于：所述的表面活性剂为含羟基聚醚、聚乙烯醇、聚乙烯吡咯烷酮、聚氧乙烯、聚硅氧烷、氟代聚乙烯醇、氟代聚乙烯吡咯烷酮、氟代聚氧乙烯、氟代聚硅氧烷、硅酸盐或烷基磺酸盐。
21.如权利要求8所述的清洗剂，其特征在于：所述的表面活性剂的含量为小于或等于质量百分比10％。
22.如权利要求21所述的清洗剂，其特征在于：所述的含量为小于或等于质量百分比3％。
23.如权利要求8所述的清洗剂，其特征在于：所述的缓蚀剂为酚类，羧酸、羧酸酯类或酸酐类。
24.如权利要求8所述的清洗剂，其特征在于：所述的缓蚀剂的含量为小于或等于质量百分比10％。
25.如权利要求24所述的清洗剂，其特征在于：所述的含量为小于或等于质量百分比3％。
26.如权利要求23所述的清洗剂，其特征在于：所述的酚类为苯酚、对羟基苯酚或连苯三酚。
27.如权利要求23所述的清洗剂，其特征在于：所述的羧酸、羧酸酯类为苯甲酸、对氨基苯甲酸、对氨基苯甲酸甲酯、邻苯二甲酸、间苯二甲酸、没食子酸或没食子酸丙酯。
28.如权利要求23所述的清洗剂，其特征在于：所述的酸酐类为乙酸酐、己酸酐、马来酸酐或聚马来酸酐。
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| CN200610147345.5 | 2006-12-15 | ||
| PCT/CN2007/003520 WO2008071078A1 (fr) | 2006-12-15 | 2007-12-10 | Composition nettoyante pour éliminer un photorésist |
| CN200780044674XA CN101548241B (zh) | 2006-12-15 | 2007-12-10 | 低蚀刻性光刻胶清洗剂 |
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| CN101566804B (zh) * | 2009-05-11 | 2011-06-15 | 绵阳艾萨斯电子材料有限公司 | 平板显示用显影液 |
| CN102533474B (zh) * | 2010-12-30 | 2015-09-16 | 安集微电子（上海）有限公司 | 一种清洗液及其清洗方法 |
| CN102200700B (zh) * | 2011-06-08 | 2012-08-22 | 绵阳艾萨斯电子材料有限公司 | 剥离液及其制备方法与应用 |
| CN103838092A (zh) * | 2012-11-22 | 2014-06-04 | 安集微电子科技(上海)有限公司 | 一种去除光阻残留物的清洗液 |
| CN104694280A (zh) * | 2015-02-03 | 2015-06-10 | 上海彭港实业发展有限公司 | 去油漆干洗剂 |
| CN105908198A (zh) * | 2016-06-30 | 2016-08-31 | 无锡伊佩克科技有限公司 | 环保铜材除锈剂及其制备方法 |
| CN108102817A (zh) * | 2017-12-14 | 2018-06-01 | 陈晖清 | 一种适用于汽车制造过程去除车门包边位置胶泡的底涂剂 |
| CN110437941A (zh) * | 2018-05-02 | 2019-11-12 | 蓝思科技（长沙）有限公司 | 一种玻璃脱胶剂及脱胶方法 |
| WO2020021721A1 (ja) | 2018-07-27 | 2020-01-30 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
| CN114269892B (zh) * | 2019-08-27 | 2024-02-23 | 株式会社力森诺科 | 组合物、及粘接性聚合物的清洗方法 |
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| US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
| JP4538286B2 (ja) * | 2004-09-14 | 2010-09-08 | トヨタ自動車株式会社 | 金型洗浄方法 |
| JP4236198B2 (ja) * | 2004-12-28 | 2009-03-11 | 東京応化工業株式会社 | リソグラフィー用洗浄液及びそれを用いた半導体基材形成方法 |
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