CN101525765A - Thermal field of silicon single crystal growth - Google Patents
Thermal field of silicon single crystal growth Download PDFInfo
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- CN101525765A CN101525765A CN200910022095A CN200910022095A CN101525765A CN 101525765 A CN101525765 A CN 101525765A CN 200910022095 A CN200910022095 A CN 200910022095A CN 200910022095 A CN200910022095 A CN 200910022095A CN 101525765 A CN101525765 A CN 101525765A
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- preservation cylinder
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Abstract
The invention discloses a thermal field of silicon single crystal growth, which comprises a working chamber with through holes at the lower part of the side wall and a gas inlet at the top, wherein the bottom of the working chamber is fixedly connected with an insulation bottom board, the upper surface of the insulation bottom board is sequentially fixedly connected with an inner insulation cylinder and an outer insulation cylinder with through holes at the lower part of the side wall from inner part to outer part, a clearance is arranged between the inner insulation cylinder and the outer insulation cylinder, each through hole at the lower part of the side wall is internally provided with a gas pumping hole, one end of the pumping hole is communicated with the clearance and the other end extends out of the side wall of the working chamber and is communicated with a gas pumping device, the inner insulation cylinder is internally provided with a heater fixedly connected with each electrode arranged at the bottom of the working chamber, the heater is internally provided with a crucible fixedly connected with a crucible rod, the top surface of the outer insulation cylinder is provided with an insulation board provided with a through hole, a gap communicated with the gas pumping hole and the clearance is arranged between the insulation board and the top surface of the inner insulation cylinder, and the insulation board is fixedly connected with a guide cylinder, the lower end of the guide cylinder extends into the crucible. The thermal field prolongs the service life of each part, secondarily utilizes high-temperature gas, and achieves the purposes of saving energy and reducing consumption.
Description
Technical field
The invention belongs to the semiconductor material preparing technical field, relate to a kind of thermal field of silicon monocrystal growth.
Background technology
Silicon single-crystal is a main raw material of making unicircuit and solar cell, the preparation of silicon single-crystal (growth) is that block polycrystalline starting material are put into the crucible of vacuum workshop, by heater heats the polycrystalline starting material are melted, then, by the seed crystal guiding, grow into the ideal silicon single-crystal, charge into process gas from vacuum workshop top simultaneously, and, satisfy the growth technique requirement by the extraction discharging of bottom, working spaces.But a large amount of volatile matters that produce in the silicon monocrystal growth process, be built-up on system core part well heater, crucible and the interior heat-preservation cylinder, and vacuum workshop polluted, had a strong impact on the work-ing life of each parts in the working spaces, have influence on the quality of silicon single-crystal simultaneously.
Summary of the invention
The thermal field that the purpose of this invention is to provide a kind of silicon monocrystal growth, the a large amount of volatile matters that produce in the silicon monocrystal growth process directly can be discharged vacuum workshop, reduced pollution to well heater, crucible and interior heat-preservation cylinder, improve the work-ing life of each working part, and help growing high-quality silicon single-crystal.
The technical solution adopted in the present invention is, a kind of thermal field of silicon monocrystal growth, comprise the working spaces, working spaces's lower sidewall is provided with through hole, the top of working spaces is provided with inlet mouth, this inlet mouth communicates with the air transporting arrangement of outside, bottom in the working spaces is provided with the insulation base plate, in the working spaces, the upper surface of insulation base plate is connected with columnar outer heat-preservation cylinder, the bottom of outer heat-preservation cylinder sidewall is provided with through hole, in the outer heat-preservation cylinder, the upper surface of insulation base plate also is provided with columnar interior heat-preservation cylinder, leave the gap between the sidewall of interior heat-preservation cylinder and the sidewall of outer heat-preservation cylinder, be provided with bleeding point in the through hole of outer heat-preservation cylinder lower sidewall, one end of bleeding point communicates with the gap, the other end of bleeding point stretches out from the through hole of working spaces's lower sidewall and communicates with the air extractor of outside, the bottom of working spaces vertically is provided with electrode, the upper end of electrode is passed the insulation base plate and is fixedlyed connected in the heat-preservation cylinder and with columnar well heater in stretching into, the lower end of electrode is stretched out the bottom of working spaces and is connected with power supply, the bottom of working spaces also vertically is provided with crucible pole, the bottom of working spaces is stretched out in the lower end of crucible pole, it is interior and affixed with crucible that well heater is stretched in the upper end of crucible pole, crucible is positioned at well heater, the end face of outer heat-preservation cylinder is provided with warming plate, have through hole on the warming plate, be provided with the space between warming plate and the interior heat-preservation cylinder end face, the space, gap and bleeding point communicate, be connected with the guide shell of the reverse frustoconic of hollow on the warming plate, the lower end of guide shell is stretched in the crucible by the through hole on the warming plate.
Thermal field of the present invention is used for the growing apparatus of silicon single-crystal and germanium single crystal, adopt double-layer heat insulation tube and guide shell structure, CONTROL PROCESS gas is walked around well heater and is flowed, a large amount of volatile matters of having avoided carrying in the process gas are deposited on well heater, crucible and the interior heat-preservation cylinder, prolong the work-ing life of each parts in the working spaces, provide condition for growing high-quality silicon single-crystal simultaneously.
Description of drawings
Fig. 1 is the structural representation of thermal field of the present invention.
Among the figure, 1. insulation base plate, 2. bleeding point, 3. in heat-preservation cylinder, 4. outer heat-preservation cylinder, 5. gap, 6. guide shell, 7. space, 8. warming plate, 9. working spaces, 10. crucible, 11. well heaters, 12. electrode, 13. silicon single crystal bars, 14. polysilicon fused solutions, 15. crucible poles, A. process gas.
Embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments.
The structure of thermal field of the present invention, as shown in Figure 1.The working spaces 9 that comprises hollow, the lower sidewall of working spaces 9 is symmetrically arranged with two through holes, and the top of working spaces 9 is provided with inlet mouth, and this inlet mouth communicates with the air transporting arrangement of outside, be provided with insulation base plate 1 in the working spaces 9, insulation base plate 1 is fixed in the bottom of working spaces 9.Working spaces's 9 upper surfaces interior, insulation base plate 1 are connected with columnar outer heat-preservation cylinder 4, the bottom of outer heat-preservation cylinder 4 sidewalls is symmetrically arranged with two through holes, these two through holes communicate with the two through hole of working spaces's 9 lower sidewall, outer heat-preservation cylinder 4 upper surfaces interior, insulation base plate 1 also are provided with columnar interior heat-preservation cylinder 3, the position of interior heat-preservation cylinder 3 end faces is lower than the position of outer heat-preservation cylinder 4 end faces, leaves gap 5 between the sidewall of the sidewall of interior heat-preservation cylinder 3 and outer heat-preservation cylinder 4.Be respectively arranged with bleeding point 2 in two through holes of outer heat-preservation cylinder 4 lower sidewall, an end of bleeding point 2 communicates with gap 5, and the other end stretches out from the through hole of working spaces's 9 lower sidewall and communicates with outside air extractor.The bottom of working spaces 9 vertically is provided with two electrodes 12, and the lower end of electrode 12 is stretched out the bottom of working spaces 9 and is connected with power supply, and the upper end of electrode 12 is passed insulation base plate 1 and stretched in the interior heat-preservation cylinder 3.The bottom of working spaces 9 also vertically is provided with crucible pole 15, the bottom of working spaces 9 is stretched out in the lower end of crucible pole 15, the upper end of crucible pole 15 is stretched in the interior heat-preservation cylinder 3 and is connected with crucible 10, being provided with columnar well heater 11 between the sidewall of interior heat-preservation cylinder 3 and the crucible 10, fixedlys connected with electrode 12 in the lower end of well heater 11.The end face of outer heat-preservation cylinder 4 is provided with warming plate 8, has through hole on the warming plate 8, is provided with space 7 between warming plate 8 and interior heat-preservation cylinder 3 end faces, and space 7, gap 5 and bleeding point 2 communicate.Vertically be connected with the guide shell 6 of the reverse frustoconic of hollow on the warming plate 8, the upper surface of guide shell 6 is concordant with the upper surface of warming plate 8, and the lower end of guide shell 6 is stretched in the crucible 10 by the through hole on the warming plate 8.
The working process of thermal field of the present invention:
The chunk polysilicon starting material are put into crucible 10, connect power supply, electric current after well heater 11 energisings, begins heating by electrode 12 input well heaters 11, give out heat, polysilicon starting material in the crucible 10 are heated, and make its fusing, form polysilicon fused solution 14, then, grow silicon single crystal bar 13 by the seed crystal guiding.In the process of growth of silicon single crystal bar 13, open air transporting arrangement and air extractor simultaneously, this air transporting arrangement is sent into process gas A in the working spaces 9 by the through hole at 9 tops, working spaces, enter the process gas A of working spaces 9, enter crucible 10 by guide shell 6, it is mobile upwards to turn back behind the liquid level of polysilicon fused solution 14 in running into crucible 10, and the slit between guide shell 6 and crucible 10 walls upwards enters space 7, flow in the gap 5 by space 7 again, afterwards, the process gas A that flows into gap 55 flows downward along the gap, flows out thermal fields by bleeding point 2.
Thermal field of the present invention, process gas A turns back after entering crucible 10, space 7 through communicating, gap 5 and bleeding point 2 flow out thermal field, in this process, the volatile matter that polycrystalline silicon raw material after process gas A will melt produces when distillation generates silicon single crystal is taken thermal field out of, simultaneously, process gas A has also absorbed heat at crucible 10, in the time of on by the gap 5 between outer heat-preservation cylinder 4 and interior heat-preservation cylinder 3 sidewalls, again the heat release that absorbs is come out, heat-preservation cylinder 3 keeps high temperature in making, and A carries out second stage employ to the pyritous process gas, has reached energy saving purposes.
Thermal field of the present invention comes the flow direction of CONTROL PROCESS gas A by the characteristics of apparatus structure, reduced process gas A greatly to washing away that well heater 11, crucible 10 and interior heat-preservation cylinder 3 cause, avoided the deposition of volatile matter on well heater 11, crucible 10 and interior heat-preservation cylinder 3, improved the work-ing life of each working part in the working spaces 9, simultaneously, high-temperature gas is carried out second stage employ, realized energy-saving and cost-reducing.
Thermal field structure advantages of simple of the present invention, energy-saving effect are obvious, are widely used in the growth of semiconductor silicon single crystal and germanium single crystal.
Claims (1)
1. the thermal field of a silicon monocrystal growth, it is characterized in that, comprise working spaces (9), working spaces (9) lower sidewall is provided with through hole, the top of working spaces (9) is provided with inlet mouth, this inlet mouth communicates with the air transporting arrangement of outside, bottom in the working spaces (9) is provided with insulation base plate (1), in the working spaces (9), the upper surface of insulation base plate (1) is connected with columnar outer heat-preservation cylinder (4), the bottom of outer heat-preservation cylinder (4) sidewall is provided with through hole, in the outer heat-preservation cylinder (4), the upper surface of insulation base plate (1) also is provided with columnar interior heat-preservation cylinder (3), leave gap (5) between the sidewall of the sidewall of interior heat-preservation cylinder (3) and outer heat-preservation cylinder (4), be provided with bleeding point (2) in the through hole of outer heat-preservation cylinder (4) lower sidewall, one end of bleeding point (2) communicates with gap (5), the other end of bleeding point (2) stretches out from the through hole of working spaces (9) lower sidewall and communicates with the air extractor of outside, the bottom of working spaces (9) vertically is provided with electrode (12), the upper end of electrode (12) is passed insulation base plate (1) and is stretched in the interior heat-preservation cylinder (3) and fixedly connected with columnar well heater (11), the lower end of electrode (12) is stretched out the bottom of working spaces (9) and is connected with power supply, the bottom of working spaces (9) also vertically is provided with crucible pole (15), the bottom of working spaces (9) is stretched out in the lower end of crucible pole (15), it is interior and affixed with crucible (10) that well heater (11) is stretched in the upper end of crucible pole (15), crucible (10) is positioned at well heater (11), the end face of outer heat-preservation cylinder (4) is provided with warming plate (8), warming plate has through hole on (8), be provided with space (7) between warming plate (8) and interior heat-preservation cylinder (3) end face, space (7), gap (5) and bleeding point (2) communicate, be connected with the guide shell (6) of the reverse frustoconic of hollow on the warming plate (8), the lower end of guide shell (6) is stretched in the crucible (10) by the through hole on the warming plate (8).
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910022095A CN101525765B (en) | 2009-04-17 | 2009-04-17 | Thermal field of silicon single crystal growth |
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| CN200910022095A CN101525765B (en) | 2009-04-17 | 2009-04-17 | Thermal field of silicon single crystal growth |
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| CN101525765A true CN101525765A (en) | 2009-09-09 |
| CN101525765B CN101525765B (en) | 2012-09-26 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140673A (en) * | 2011-03-23 | 2011-08-03 | 上虞晶信机电科技有限公司 | Polycrystalline silicon ingot furnace heating device with separately controlled top and side |
| CN102312284A (en) * | 2011-07-06 | 2012-01-11 | 浙江晶盛机电股份有限公司 | Thermal field of straight pulling silicon single crystal furnace with a plurality of exhaust pipelines uniformly and downward distributed |
| CN105525342A (en) * | 2015-12-22 | 2016-04-27 | 英利集团有限公司 | Method and monocrystal furnace for preparing large-size monocrystal silicon rod through Czochralski method |
| CN112226811A (en) * | 2020-10-09 | 2021-01-15 | 西安邦泰电子技术有限公司 | Thermal field for single crystal furnace and single crystal furnace |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1205362C (en) * | 2001-10-18 | 2005-06-08 | 北京有色金属研究总院 | Gas flow control method of thermal field of vertical pulling silicon monocrystal furnace and its device |
| CN100562610C (en) * | 2007-04-28 | 2009-11-25 | 江苏华盛天龙光电设备股份有限公司 | Guide shell lifting mechanism for artificial crystal growth |
| CN201162060Y (en) * | 2008-03-03 | 2008-12-10 | 西安隆基硅材料有限公司 | Thermal field structure for vertical pulling silicon monocrystal growth |
| CN101319351B (en) * | 2008-06-26 | 2010-04-21 | 常州中弘光伏有限公司 | Monocrystalline growing furnace |
| CN201217710Y (en) * | 2008-07-18 | 2009-04-08 | 北京天能运通晶体技术有限公司 | Apparatus for reducing energy consumption of monocrystal silicon stove |
-
2009
- 2009-04-17 CN CN200910022095A patent/CN101525765B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140673A (en) * | 2011-03-23 | 2011-08-03 | 上虞晶信机电科技有限公司 | Polycrystalline silicon ingot furnace heating device with separately controlled top and side |
| CN102312284A (en) * | 2011-07-06 | 2012-01-11 | 浙江晶盛机电股份有限公司 | Thermal field of straight pulling silicon single crystal furnace with a plurality of exhaust pipelines uniformly and downward distributed |
| CN102312284B (en) * | 2011-07-06 | 2013-11-13 | 浙江晶盛机电股份有限公司 | Thermal field of straight pulling silicon single crystal furnace with a plurality of exhaust pipelines uniformly and downward distributed |
| CN105525342A (en) * | 2015-12-22 | 2016-04-27 | 英利集团有限公司 | Method and monocrystal furnace for preparing large-size monocrystal silicon rod through Czochralski method |
| CN112226811A (en) * | 2020-10-09 | 2021-01-15 | 西安邦泰电子技术有限公司 | Thermal field for single crystal furnace and single crystal furnace |
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| CN101525765B (en) | 2012-09-26 |
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