CN101523607B - 穿隧式场效应晶体管 - Google Patents
穿隧式场效应晶体管 Download PDFInfo
- Publication number
- CN101523607B CN101523607B CN2007800369584A CN200780036958A CN101523607B CN 101523607 B CN101523607 B CN 101523607B CN 2007800369584 A CN2007800369584 A CN 2007800369584A CN 200780036958 A CN200780036958 A CN 200780036958A CN 101523607 B CN101523607 B CN 101523607B
- Authority
- CN
- China
- Prior art keywords
- accumulation layer
- diffusion part
- semiconductor device
- type
- cap rock
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title description 6
- 238000009825 accumulation Methods 0.000 claims abstract description 56
- 238000009792 diffusion process Methods 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000011435 rock Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 230000003071 parasitic effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000012212 insulator Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06121784.0 | 2006-10-05 | ||
EP06121784 | 2006-10-05 | ||
PCT/IB2007/054020 WO2008041188A1 (en) | 2006-10-05 | 2007-10-03 | Tunnel field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101523607A CN101523607A (zh) | 2009-09-02 |
CN101523607B true CN101523607B (zh) | 2012-03-21 |
Family
ID=39004461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800369584A Expired - Fee Related CN101523607B (zh) | 2006-10-05 | 2007-10-03 | 穿隧式场效应晶体管 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7839209B2 (zh) |
EP (1) | EP2074662A1 (zh) |
CN (1) | CN101523607B (zh) |
WO (1) | WO2008041188A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8405121B2 (en) * | 2009-02-12 | 2013-03-26 | Infineon Technologies Ag | Semiconductor devices |
US8368127B2 (en) * | 2009-10-08 | 2013-02-05 | Globalfoundries Singapore Pte., Ltd. | Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive current |
CN101777580B (zh) * | 2009-12-30 | 2012-09-05 | 复旦大学 | 一种隧穿场效应晶体管及其制造方法 |
CN101819975B (zh) * | 2010-04-28 | 2011-12-07 | 复旦大学 | 垂直沟道双栅隧穿晶体管及其制备方法 |
CN102142461B (zh) * | 2011-01-07 | 2013-01-30 | 清华大学 | 栅控肖特基结隧穿场效应晶体管及其形成方法 |
CN102169901B (zh) * | 2011-03-01 | 2012-10-10 | 清华大学 | 具有异质栅极功函数的隧穿场效应晶体管及其形成方法 |
US8860140B2 (en) | 2011-03-01 | 2014-10-14 | Tsinghua University | Tunneling field effect transistor and method for forming the same |
US8853674B2 (en) * | 2011-10-31 | 2014-10-07 | Tsinghua University | Tunneling field effect transistor structure and method for forming the same |
CN102354708B (zh) * | 2011-10-31 | 2013-07-31 | 清华大学 | 具有悬空源漏的隧穿场效应晶体管结构及其形成方法 |
CN103094338B (zh) * | 2011-11-01 | 2015-09-09 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US8816326B2 (en) | 2011-11-01 | 2014-08-26 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor device and manufacturing method thereof |
CN102779853A (zh) * | 2012-08-16 | 2012-11-14 | 复旦大学 | 一种制作在锗硅外延层上的隧穿晶体管及其制备方法 |
US8975123B2 (en) | 2013-07-09 | 2015-03-10 | International Business Machines Corporation | Tunnel field-effect transistors with a gate-swing broken-gap heterostructure |
JP6095083B2 (ja) * | 2013-10-31 | 2017-03-15 | 国立大学法人北海道大学 | Iii−v族化合物半導体ナノワイヤ、電界効果トランジスタおよびスイッチ素子 |
US11404562B2 (en) | 2017-08-18 | 2022-08-02 | Intel Corporation | Tunneling field effect transistors |
CN111785782B (zh) * | 2020-05-25 | 2022-09-30 | 西安电子科技大学 | 一种适用于平面工艺的InAs-GaSb TFET |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4835581A (en) * | 1986-07-25 | 1989-05-30 | Hitachi, Ltd. | Electron gas hole gas tunneling transistor device |
US5840596A (en) * | 1996-06-17 | 1998-11-24 | Nothern Telecom Limited | Method of manufacturing complementary modulation-doped field effect transistors |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR890005304B1 (en) | 1986-04-23 | 1989-12-20 | Shiro Kanao | Flexible hard pipe |
JPH0812916B2 (ja) * | 1989-12-20 | 1996-02-07 | 日本電気株式会社 | 電界効果トランジスタ |
GB2248966A (en) * | 1990-10-19 | 1992-04-22 | Philips Electronic Associated | Field effect semiconductor devices |
WO2001093338A1 (en) | 2000-05-26 | 2001-12-06 | Amberwave Systems Corporation | Buried channel strained silicon fet using an ion implanted doped layer |
US20020179946A1 (en) * | 2000-10-19 | 2002-12-05 | Yoshiro Hara | P-channel field-effect transistor |
US6982229B2 (en) | 2003-04-18 | 2006-01-03 | Lsi Logic Corporation | Ion recoil implantation and enhanced carrier mobility in CMOS device |
JP4888118B2 (ja) | 2004-09-16 | 2012-02-29 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び半導体装置 |
-
2007
- 2007-10-03 EP EP07826637A patent/EP2074662A1/en not_active Withdrawn
- 2007-10-03 US US12/444,140 patent/US7839209B2/en not_active Expired - Fee Related
- 2007-10-03 CN CN2007800369584A patent/CN101523607B/zh not_active Expired - Fee Related
- 2007-10-03 WO PCT/IB2007/054020 patent/WO2008041188A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4835581A (en) * | 1986-07-25 | 1989-05-30 | Hitachi, Ltd. | Electron gas hole gas tunneling transistor device |
US5840596A (en) * | 1996-06-17 | 1998-11-24 | Nothern Telecom Limited | Method of manufacturing complementary modulation-doped field effect transistors |
Also Published As
Publication number | Publication date |
---|---|
CN101523607A (zh) | 2009-09-02 |
US20100097135A1 (en) | 2010-04-22 |
EP2074662A1 (en) | 2009-07-01 |
WO2008041188A1 (en) | 2008-04-10 |
US7839209B2 (en) | 2010-11-23 |
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Effective date of registration: 20160913 Address after: Holland Ian Deho Finn Patentee after: Naizhiya Co., Ltd. Address before: Holland Ian Deho Finn Patentee before: Koninkl Philips Electronics NV |
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Address after: Nijmegen Patentee after: Yasuyo Co. Ltd. Address before: Holland Ian Deho Finn Patentee before: Naizhiya Co., Ltd. |
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