CN101506325B - 用于半导体材料的化学机械抛光的组合物及方法 - Google Patents
用于半导体材料的化学机械抛光的组合物及方法 Download PDFInfo
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- CN101506325B CN101506325B CN200780031740XA CN200780031740A CN101506325B CN 101506325 B CN101506325 B CN 101506325B CN 200780031740X A CN200780031740X A CN 200780031740XA CN 200780031740 A CN200780031740 A CN 200780031740A CN 101506325 B CN101506325 B CN 101506325B
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- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 235000019396 potassium bromate Nutrition 0.000 description 1
- 229940094037 potassium bromate Drugs 0.000 description 1
- FJVZDOGVDJCCCR-UHFFFAOYSA-M potassium periodate Chemical compound [K+].[O-]I(=O)(=O)=O FJVZDOGVDJCCCR-UHFFFAOYSA-M 0.000 description 1
- OKBMCNHOEMXPTM-UHFFFAOYSA-M potassium peroxymonosulfate Chemical compound [K+].OOS([O-])(=O)=O OKBMCNHOEMXPTM-UHFFFAOYSA-M 0.000 description 1
- 229940020414 potassium triiodide Drugs 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OUXVDHDFKSWBOW-UHFFFAOYSA-N tetraazanium sulfonatooxy sulfate Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O.[O-]S(=O)(=O)OOS([O-])(=O)=O OUXVDHDFKSWBOW-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US84100506P | 2006-08-30 | 2006-08-30 | |
| US60/841,005 | 2006-08-30 | ||
| US11/673,399 | 2007-02-09 | ||
| US11/673,399 US7803203B2 (en) | 2005-09-26 | 2007-02-09 | Compositions and methods for CMP of semiconductor materials |
| PCT/US2007/018980 WO2008027421A1 (en) | 2006-08-30 | 2007-08-29 | Compositions and methods for cmp of semiconductor materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101506325A CN101506325A (zh) | 2009-08-12 |
| CN101506325B true CN101506325B (zh) | 2013-07-31 |
Family
ID=39136242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200780031740XA Active CN101506325B (zh) | 2006-08-30 | 2007-08-29 | 用于半导体材料的化学机械抛光的组合物及方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7803203B2 (enExample) |
| JP (1) | JP5313900B2 (enExample) |
| KR (1) | KR101356222B1 (enExample) |
| CN (1) | CN101506325B (enExample) |
| TW (1) | TWI414573B (enExample) |
| WO (1) | WO2008027421A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8425797B2 (en) * | 2008-03-21 | 2013-04-23 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
| US9548211B2 (en) * | 2008-12-04 | 2017-01-17 | Cabot Microelectronics Corporation | Method to selectively polish silicon carbide films |
| KR101377902B1 (ko) | 2008-12-11 | 2014-03-24 | 히타치가세이가부시끼가이샤 | Ｃｍｐ용 연마액 및 이것을 이용한 연마 방법 |
| JP5455452B2 (ja) * | 2009-06-05 | 2014-03-26 | Ｊｓｒ株式会社 | 表面処理用組成物、表面処理方法および半導体装置の製造方法 |
| US9982177B2 (en) | 2010-03-12 | 2018-05-29 | Hitachi Chemical Company, Ltd | Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same |
| KR20130129400A (ko) | 2010-11-22 | 2013-11-28 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 |
| JP5590144B2 (ja) | 2010-11-22 | 2014-09-17 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、及び、基板の研磨方法 |
| TWI575040B (zh) * | 2011-03-18 | 2017-03-21 | 長興開發科技股份有限公司 | 可用於拋光矽通孔晶圓之拋光組成物及其用途 |
| WO2013125445A1 (ja) | 2012-02-21 | 2013-08-29 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
| SG11201405091TA (en) | 2012-02-21 | 2014-09-26 | Hitachi Chemical Co Ltd | Polishing agent, polishing agent set, and substrate polishing method |
| KR102034328B1 (ko) | 2012-05-22 | 2019-10-18 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체 |
| SG11201407086TA (en) | 2012-05-22 | 2015-02-27 | Hitachi Chemical Co Ltd | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| CN104334675B (zh) | 2012-05-22 | 2016-10-26 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体 |
| KR102245055B1 (ko) | 2013-08-30 | 2021-04-26 | 쇼와덴코머티리얼즈가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체 |
| KR101682097B1 (ko) * | 2014-08-26 | 2016-12-02 | 주식회사 케이씨텍 | 연마 슬러리 조성물 |
| CN108251056A (zh) | 2016-12-29 | 2018-07-06 | 圣戈本陶瓷及塑料股份有限公司 | 研磨颗粒、固定研磨制品以及形成该固定研磨制品的方法 |
| KR102422952B1 (ko) * | 2017-06-12 | 2022-07-19 | 삼성전자주식회사 | 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법 |
| CN108107064A (zh) * | 2017-12-14 | 2018-06-01 | 河北工业大学 | 一种用于制备退火后铝钢复合板界面ebsd测试的方法 |
| US10988635B2 (en) * | 2018-12-04 | 2021-04-27 | Cmc Materials, Inc. | Composition and method for copper barrier CMP |
| CN113122139B (zh) * | 2019-12-30 | 2024-04-05 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液及其使用方法 |
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| US7563383B2 (en) * | 2004-10-12 | 2009-07-21 | Cabot Mircroelectronics Corporation | CMP composition with a polymer additive for polishing noble metals |
| WO2006078074A2 (en) * | 2005-01-24 | 2006-07-27 | Showa Denko K.K. | Polishing composition and polishing method |
-
2007
- 2007-02-09 US US11/673,399 patent/US7803203B2/en not_active Expired - Fee Related
- 2007-08-24 TW TW096131529A patent/TWI414573B/zh active
- 2007-08-29 JP JP2009526691A patent/JP5313900B2/ja active Active
- 2007-08-29 CN CN200780031740XA patent/CN101506325B/zh active Active
- 2007-08-29 KR KR1020097003970A patent/KR101356222B1/ko active Active
- 2007-08-29 WO PCT/US2007/018980 patent/WO2008027421A1/en not_active Ceased
-
2010
- 2010-08-11 US US12/854,470 patent/US8529680B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20100314576A1 (en) | 2010-12-16 |
| US7803203B2 (en) | 2010-09-28 |
| US8529680B2 (en) | 2013-09-10 |
| CN101506325A (zh) | 2009-08-12 |
| KR101356222B1 (ko) | 2014-01-28 |
| KR20090047494A (ko) | 2009-05-12 |
| WO2008027421A1 (en) | 2008-03-06 |
| JP2010503211A (ja) | 2010-01-28 |
| JP5313900B2 (ja) | 2013-10-09 |
| US20070181535A1 (en) | 2007-08-09 |
| TW200825147A (en) | 2008-06-16 |
| TWI414573B (zh) | 2013-11-11 |
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