JP5313900B2 - 半導体材料のｃｍｐのための組成物と研磨方法 - Google Patents

半導体材料のｃｍｐのための組成物と研磨方法 Download PDF

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Publication number
JP5313900B2
JP5313900B2 JP2009526691A JP2009526691A JP5313900B2 JP 5313900 B2 JP5313900 B2 JP 5313900B2 JP 2009526691 A JP2009526691 A JP 2009526691A JP 2009526691 A JP2009526691 A JP 2009526691A JP 5313900 B2 JP5313900 B2 JP 5313900B2
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polishing
chemical mechanical
polishing composition
metal
mechanical polishing
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JP2010503211A5 (enExample
JP2010503211A (ja
Inventor
リージ シソーロ，フランチェスコ デ
グルンビン，スティーブン
カーター，フィリップ
リ，ショウティアン
チャン，チアン
シュレーダー，デイビッド
ツァイ，ミン−シー
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キャボット マイクロエレクトロニクス コーポレイション
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2009526691A 2006-08-30 2007-08-29 半導体材料のｃｍｐのための組成物と研磨方法 Active JP5313900B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US84100506P 2006-08-30 2006-08-30
US60/841,005 2006-08-30
US11/673,399 2007-02-09
US11/673,399 US7803203B2 (en) 2005-09-26 2007-02-09 Compositions and methods for CMP of semiconductor materials
PCT/US2007/018980 WO2008027421A1 (en) 2006-08-30 2007-08-29 Compositions and methods for cmp of semiconductor materials

Publications (3)

Publication Number Publication Date
JP2010503211A JP2010503211A (ja) 2010-01-28
JP2010503211A5 JP2010503211A5 (enExample) 2010-10-14
JP5313900B2 true JP5313900B2 (ja) 2013-10-09

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JP2009526691A Active JP5313900B2 (ja) 2006-08-30 2007-08-29 半導体材料のｃｍｐのための組成物と研磨方法

Country Status (6)

Country Link
US (2) US7803203B2 (enExample)
JP (1) JP5313900B2 (enExample)
KR (1) KR101356222B1 (enExample)
CN (1) CN101506325B (enExample)
TW (1) TWI414573B (enExample)
WO (1) WO2008027421A1 (enExample)

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KR101682097B1 (ko) * 2014-08-26 2016-12-02 주식회사 케이씨텍 연마 슬러리 조성물
CN108251056A (zh) 2016-12-29 2018-07-06 圣戈本陶瓷及塑料股份有限公司 研磨颗粒、固定研磨制品以及形成该固定研磨制品的方法
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Also Published As

Publication number Publication date
US20100314576A1 (en) 2010-12-16
US7803203B2 (en) 2010-09-28
US8529680B2 (en) 2013-09-10
CN101506325A (zh) 2009-08-12
KR101356222B1 (ko) 2014-01-28
KR20090047494A (ko) 2009-05-12
WO2008027421A1 (en) 2008-03-06
CN101506325B (zh) 2013-07-31
JP2010503211A (ja) 2010-01-28
US20070181535A1 (en) 2007-08-09
TW200825147A (en) 2008-06-16
TWI414573B (zh) 2013-11-11

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