CN101486463A - 用于降低卤代硅烷中元素如硼的含量的方法以及用于实施该方法的装置 - Google Patents
用于降低卤代硅烷中元素如硼的含量的方法以及用于实施该方法的装置 Download PDFInfo
- Publication number
- CN101486463A CN101486463A CNA2009100022349A CN200910002234A CN101486463A CN 101486463 A CN101486463 A CN 101486463A CN A2009100022349 A CNA2009100022349 A CN A2009100022349A CN 200910002234 A CN200910002234 A CN 200910002234A CN 101486463 A CN101486463 A CN 101486463A
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- China
- Prior art keywords
- halogenated silanes
- complex compound
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- purified
- equipment
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 79
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 36
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000009434 installation Methods 0.000 title abstract 3
- 150000001875 compounds Chemical class 0.000 claims abstract description 68
- JBWKIWSBJXDJDT-UHFFFAOYSA-N triphenylmethyl chloride Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(Cl)C1=CC=CC=C1 JBWKIWSBJXDJDT-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000005046 Chlorosilane Substances 0.000 claims abstract description 6
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000004756 silanes Chemical class 0.000 claims description 112
- 238000004821 distillation Methods 0.000 claims description 25
- 230000000536 complexating effect Effects 0.000 claims description 23
- 238000001914 filtration Methods 0.000 claims description 21
- 238000000926 separation method Methods 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 17
- 239000011541 reaction mixture Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000001556 precipitation Methods 0.000 claims description 13
- 239000004411 aluminium Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 12
- 239000005052 trichlorosilane Substances 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 7
- 239000011148 porous material Substances 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 4
- 239000013049 sediment Substances 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- 230000009471 action Effects 0.000 abstract description 2
- 230000000737 periodic effect Effects 0.000 abstract description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 12
- 239000005049 silicon tetrachloride Substances 0.000 description 12
- 238000009835 boiling Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- -1 tin halide Chemical class 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000706 filtrate Substances 0.000 description 4
- 239000000413 hydrolysate Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000013019 agitation Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000005647 hydrohalogenation reaction Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229920001774 Perfluoroether Polymers 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000003556 assay Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000007701 flash-distillation Methods 0.000 description 2
- 244000144992 flock Species 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UOFGSWVZMUXXIY-UHFFFAOYSA-N 1,5-Diphenyl-3-thiocarbazone Chemical compound C=1C=CC=CC=1N=NC(=S)NNC1=CC=CC=C1 UOFGSWVZMUXXIY-UHFFFAOYSA-N 0.000 description 1
- OEWAXXLOSKFJKT-UHFFFAOYSA-N 1-imino-3-(n-phenylanilino)thiourea Chemical compound C=1C=CC=CC=1N(NC(=S)N=N)C1=CC=CC=C1 OEWAXXLOSKFJKT-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- FRBWQYOCAFBYDN-UHFFFAOYSA-N [SiH3][SiH2][SiH2][SiH3].[Cl] Chemical class [SiH3][SiH2][SiH2][SiH3].[Cl] FRBWQYOCAFBYDN-UHFFFAOYSA-N 0.000 description 1
- 150000001399 aluminium compounds Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- VEYJKODKHGEDMC-UHFFFAOYSA-N dichloro(trichlorosilyl)silicon Chemical compound Cl[Si](Cl)[Si](Cl)(Cl)Cl VEYJKODKHGEDMC-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- IBOKZQNMFSHYNQ-UHFFFAOYSA-N tribromosilane Chemical compound Br[SiH](Br)Br IBOKZQNMFSHYNQ-UHFFFAOYSA-N 0.000 description 1
- VYFXMIAQVGXIIN-UHFFFAOYSA-N trichloro(chlorosilyl)silane Chemical compound Cl[SiH2][Si](Cl)(Cl)Cl VYFXMIAQVGXIIN-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical group ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
- C01B33/10794—Purification by forming addition compounds or complexes, the reactant being possibly contained in an adsorbent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008004397A DE102008004397A1 (de) | 2008-01-14 | 2008-01-14 | Verfahren zur Verminderung des Gehaltes von Elementen, wie Bor, in Halogensilanen sowie Anlage zur Durchführung des Verfahrens |
| DE102008004397.4 | 2008-01-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101486463A true CN101486463A (zh) | 2009-07-22 |
Family
ID=40546089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100022349A Pending CN101486463A (zh) | 2008-01-14 | 2009-01-13 | 用于降低卤代硅烷中元素如硼的含量的方法以及用于实施该方法的装置 |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US20100278706A1 (https=) |
| EP (1) | EP2229342B1 (https=) |
| JP (1) | JP2011509907A (https=) |
| KR (1) | KR20100112574A (https=) |
| CN (1) | CN101486463A (https=) |
| AT (1) | ATE523469T1 (https=) |
| BR (1) | BRPI0822183A2 (https=) |
| CA (1) | CA2711546A1 (https=) |
| DE (1) | DE102008004397A1 (https=) |
| ES (1) | ES2371999T3 (https=) |
| RU (1) | RU2504515C2 (https=) |
| UA (1) | UA102239C2 (https=) |
| WO (1) | WO2009089950A2 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106744685A (zh) * | 2016-11-21 | 2017-05-31 | 亚洲硅业（青海）有限公司 | 电子级多晶硅生产中循环氢气的深度净化方法 |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITRM20040570A1 (it) * | 2004-11-19 | 2005-02-19 | Memc Electronic Materials | Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio. |
| DE102005041137A1 (de) | 2005-08-30 | 2007-03-01 | Degussa Ag | Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid |
| DE102006003464A1 (de) * | 2006-01-25 | 2007-07-26 | Degussa Gmbh | Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung |
| DE102007007874A1 (de) * | 2007-02-14 | 2008-08-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Silane |
| DE102007059170A1 (de) * | 2007-12-06 | 2009-06-10 | Evonik Degussa Gmbh | Katalysator und Verfahren zur Dismutierung von Wasserstoff enthaltenden Halogensilanen |
| DE102008002537A1 (de) * | 2008-06-19 | 2009-12-24 | Evonik Degussa Gmbh | Verfahren zur Entfernung von Bor enthaltenden Verunreinigungen aus Halogensilanen sowie Anlage zur Durchführung des Verfahrens |
| DE102008054537A1 (de) * | 2008-12-11 | 2010-06-17 | Evonik Degussa Gmbh | Entfernung von Fremdmetallen aus Siliciumverbindungen durch Adsorption und/oder Filtration |
| DE102009027730A1 (de) | 2009-07-15 | 2011-01-27 | Evonik Degussa Gmbh | Verahren und Verwendung von aminofunktionellen Harzen zur Dismutierung von Halogensilanen und zur Entfernung von Fremdmetallen |
| JP5387267B2 (ja) * | 2009-09-17 | 2014-01-15 | 三菱マテリアル株式会社 | クロロシラン精製装置及び精製方法 |
| DE102009053804B3 (de) | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102010002342A1 (de) | 2010-02-25 | 2011-08-25 | Evonik Degussa GmbH, 45128 | Verwendung der spezifischen Widerstandsmessung zur indirekten Bestimmung der Reinheit von Silanen und Germanen und ein entsprechendes Verfahren |
| DE102011004058A1 (de) | 2011-02-14 | 2012-08-16 | Evonik Degussa Gmbh | Monochlorsilan, Verfahren und Vorrichtung zu dessen Herstellung |
| DE102011004750A1 (de) | 2011-02-25 | 2012-08-30 | Evonik Degussa Gmbh | Vorrichtung und Verfahren zum Verarbeiten eines SiO2-haltigen Materials |
| DE102014203810A1 (de) * | 2014-03-03 | 2015-09-03 | Evonik Degussa Gmbh | Verfahren zur Herstellung reiner Octachlortrisilane und Decachlortetrasilane |
| JP6095613B2 (ja) * | 2014-07-10 | 2017-03-15 | 信越化学工業株式会社 | クロロシランの精製方法 |
| KR102517182B1 (ko) | 2014-08-15 | 2023-04-04 | 메사추세츠 인스티튜트 오브 테크놀로지 | 활성 제약 성분을 포함한 화학적 생성물의 합성을 위한 시스템 및 방법 |
| US10252916B2 (en) * | 2014-09-04 | 2019-04-09 | Corner Star Limited | Methods for separating halosilanes |
| EP3452220A4 (en) | 2016-05-02 | 2020-01-01 | Massachusetts Institute of Technology | RECONFIGURABLE MULTI-STAGE CHEMICAL SYNTHESIS SYSTEM AND COMPONENTS AND RELATED METHODS |
| EP3659964A1 (en) | 2018-11-28 | 2020-06-03 | Hysilabs, SAS | Catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds |
| CN112010313A (zh) * | 2019-05-31 | 2020-12-01 | 新特能源股份有限公司 | 一种多晶硅副产物渣料处理工艺及系统 |
| KR102766864B1 (ko) | 2019-11-27 | 2025-02-11 | 와커 헤미 아게 | 클로로실란 혼합물로부터 불순물을 제거하는 방법 |
| RU2759500C1 (ru) * | 2021-03-12 | 2021-11-15 | Лев Эдуардович Барышников | Способ очистки гексахлордисилана от примесей хлоридов металлов |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2812235A (en) * | 1955-09-16 | 1957-11-05 | Bell Telephone Labor Inc | Method of purifying volatile compounds of germanium and silicon |
| GB834380A (en) * | 1957-04-25 | 1960-05-04 | Licentia Gmbh | A method of producing purified silicon halide |
| DE1073460B (de) * | 1958-01-11 | 1960-01-21 | LICENTIA Patent-Verwaltungs-G.m.b.H., Frankfurt/M | Verfahren zum Reinigen von Silan oder chlorierten Silanen |
| FR1518553A (fr) | 1960-03-11 | 1968-03-29 | Pechiney Prod Chimiques Sa | Procédé de purification de composés volatils de germanium et de silicium |
| DE1792651A1 (de) * | 1968-09-28 | 1971-11-25 | Dynamit Nobel Ag | Verfahren zur Reinigung von Chlorsilanen |
| US4092446A (en) * | 1974-07-31 | 1978-05-30 | Texas Instruments Incorporated | Process of refining impure silicon to produce purified electronic grade silicon |
| US4374110A (en) * | 1981-06-15 | 1983-02-15 | Motorola, Inc. | Purification of silicon source materials |
| US4526769A (en) * | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
| RU1835386C (ru) * | 1991-04-17 | 1993-08-23 | Запорожский титано-магниевый комбинат | Способ очистки хлорсиланов |
| JPH0731104B2 (ja) * | 1991-10-31 | 1995-04-10 | 住友シチックス株式会社 | トリクロロシラン溶液中の超微量成分捕集方法 |
| DE102004045245B4 (de) * | 2004-09-17 | 2007-11-15 | Degussa Gmbh | Vorrichtung und Verfahren zur Herstellung von Silanen |
| ITRM20040570A1 (it) * | 2004-11-19 | 2005-02-19 | Memc Electronic Materials | Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio. |
| RU2280010C1 (ru) * | 2004-12-10 | 2006-07-20 | Федеральное государственное унитарное предприятие "Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" | Способ получения трихлорсилана |
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2008
- 2008-01-14 DE DE102008004397A patent/DE102008004397A1/de not_active Withdrawn
- 2008-11-20 KR KR1020107015480A patent/KR20100112574A/ko not_active Ceased
- 2008-11-20 AT AT08870936T patent/ATE523469T1/de active
- 2008-11-20 ES ES08870936T patent/ES2371999T3/es active Active
- 2008-11-20 WO PCT/EP2008/065892 patent/WO2009089950A2/de not_active Ceased
- 2008-11-20 JP JP2010542546A patent/JP2011509907A/ja active Pending
- 2008-11-20 RU RU2010133878/05A patent/RU2504515C2/ru not_active IP Right Cessation
- 2008-11-20 US US12/811,925 patent/US20100278706A1/en not_active Abandoned
- 2008-11-20 BR BRPI0822183-9A patent/BRPI0822183A2/pt not_active IP Right Cessation
- 2008-11-20 UA UAA201010057A patent/UA102239C2/ru unknown
- 2008-11-20 EP EP08870936A patent/EP2229342B1/de not_active Not-in-force
- 2008-11-20 CA CA2711546A patent/CA2711546A1/en not_active Abandoned
-
2009
- 2009-01-13 CN CNA2009100022349A patent/CN101486463A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106744685A (zh) * | 2016-11-21 | 2017-05-31 | 亚洲硅业（青海）有限公司 | 电子级多晶硅生产中循环氢气的深度净化方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102008004397A1 (de) | 2009-07-16 |
| US20100278706A1 (en) | 2010-11-04 |
| RU2010133878A (ru) | 2012-02-27 |
| BRPI0822183A2 (pt) | 2015-06-23 |
| JP2011509907A (ja) | 2011-03-31 |
| RU2504515C2 (ru) | 2014-01-20 |
| WO2009089950A3 (de) | 2010-01-28 |
| KR20100112574A (ko) | 2010-10-19 |
| CA2711546A1 (en) | 2009-07-23 |
| ATE523469T1 (de) | 2011-09-15 |
| EP2229342A2 (de) | 2010-09-22 |
| ES2371999T3 (es) | 2012-01-12 |
| EP2229342B1 (de) | 2011-09-07 |
| UA102239C2 (ru) | 2013-06-25 |
| WO2009089950A2 (de) | 2009-07-23 |
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