CN101471345B - 半导体装置和光掩膜 - Google Patents

半导体装置和光掩膜 Download PDF

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Publication number
CN101471345B
CN101471345B CN 200810188636 CN200810188636A CN101471345B CN 101471345 B CN101471345 B CN 101471345B CN 200810188636 CN200810188636 CN 200810188636 CN 200810188636 A CN200810188636 A CN 200810188636A CN 101471345 B CN101471345 B CN 101471345B
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CN
China
Prior art keywords
sidewall
electrode layer
grid electrode
contact hole
opposing party
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 200810188636
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English (en)
Chinese (zh)
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CN101471345A (zh
Inventor
竹内雅彦
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority claimed from JP2008257545A external-priority patent/JP2010087420A/ja
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Publication of CN101471345A publication Critical patent/CN101471345A/zh
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Publication of CN101471345B publication Critical patent/CN101471345B/zh
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  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN 200810188636 2007-12-28 2008-12-25 半导体装置和光掩膜 Expired - Fee Related CN101471345B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007339965A JP5272203B2 (ja) 2007-12-28 2007-12-28 半導体装置およびフォトマスク
JP2007-339965 2007-12-28
JP2007339965 2007-12-28
JP2008257545A JP2010087420A (ja) 2008-10-02 2008-10-02 半導体装置およびフォトマスク
JP2008257545 2008-10-02
JP2008-257545 2008-10-02

Publications (2)

Publication Number Publication Date
CN101471345A CN101471345A (zh) 2009-07-01
CN101471345B true CN101471345B (zh) 2012-12-12

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CN 200810188636 Expired - Fee Related CN101471345B (zh) 2007-12-28 2008-12-25 半导体装置和光掩膜

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JP (1) JP5272203B2 (ja)
CN (1) CN101471345B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176174A (ja) * 2010-02-25 2011-09-08 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
JP2012156229A (ja) * 2011-01-25 2012-08-16 Renesas Electronics Corp 半導体装置およびその製造方法
CN104576536B (zh) * 2013-10-10 2017-11-14 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
CN107112365A (zh) * 2014-12-25 2017-08-29 夏普株式会社 半导体装置
US9595478B2 (en) * 2015-06-12 2017-03-14 Globalfoundries Inc. Dummy gate used as interconnection and method of making the same
CN107978598B (zh) * 2016-10-24 2020-07-07 中芯国际集成电路制造(上海)有限公司 一种标准单元的版图结构及电子装置
US10461086B2 (en) 2016-10-31 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Memory cell structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1366342A (zh) * 2001-01-16 2002-08-28 三菱电机株式会社 半导体存储器
JP2004327796A (ja) * 2003-04-25 2004-11-18 Toshiba Corp 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5090671B2 (ja) * 2005-08-01 2012-12-05 ルネサスエレクトロニクス株式会社 半導体装置
JP4768399B2 (ja) * 2005-10-31 2011-09-07 株式会社東芝 半導体装置
JP5153136B2 (ja) * 2005-12-28 2013-02-27 株式会社半導体エネルギー研究所 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1366342A (zh) * 2001-01-16 2002-08-28 三菱电机株式会社 半导体存储器
US6597041B2 (en) * 2001-01-16 2003-07-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor static random access memory device
JP2004327796A (ja) * 2003-04-25 2004-11-18 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
CN101471345A (zh) 2009-07-01
JP5272203B2 (ja) 2013-08-28
JP2009164211A (ja) 2009-07-23

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Owner name: RENESAS ELECTRONICS CORPORATION

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Effective date: 20101019

C41 Transfer of patent application or patent right or utility model
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Termination date: 20141225

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