CN101467263A - 碲化镉基光伏器件及其制造方法 - Google Patents

碲化镉基光伏器件及其制造方法 Download PDF

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Publication number
CN101467263A
CN101467263A CNA2007800220090A CN200780022009A CN101467263A CN 101467263 A CN101467263 A CN 101467263A CN A2007800220090 A CNA2007800220090 A CN A2007800220090A CN 200780022009 A CN200780022009 A CN 200780022009A CN 101467263 A CN101467263 A CN 101467263A
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CN
China
Prior art keywords
sio
silicone
silicone resin
silicon
photovoltaic device
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Pending
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CNA2007800220090A
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English (en)
Chinese (zh)
Inventor
D·E·卡佐里斯
B·朱
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Dow Silicones Corp
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Dow Corning Corp
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Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of CN101467263A publication Critical patent/CN101467263A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)
  • Photovoltaic Devices (AREA)
CNA2007800220090A 2006-04-18 2007-04-18 碲化镉基光伏器件及其制造方法 Pending CN101467263A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79277306P 2006-04-18 2006-04-18
US60/792,773 2006-04-18

Publications (1)

Publication Number Publication Date
CN101467263A true CN101467263A (zh) 2009-06-24

Family

ID=38610253

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800220090A Pending CN101467263A (zh) 2006-04-18 2007-04-18 碲化镉基光伏器件及其制造方法

Country Status (6)

Country Link
US (1) US20090090413A1 (enExample)
EP (2) EP2016626A2 (enExample)
JP (2) JP5253380B2 (enExample)
KR (1) KR20080112381A (enExample)
CN (1) CN101467263A (enExample)
WO (1) WO2007120905A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101805562A (zh) * 2010-03-26 2010-08-18 陈俊光 硅树脂型涂敷料及其制备方法
CN102127745A (zh) * 2009-12-15 2011-07-20 初星太阳能公司 用于连续沉积薄膜层到基底上的模块系统和方法
CN102453863A (zh) * 2010-10-27 2012-05-16 初星太阳能公司 溅射基于碲化镉的薄膜光伏器件中使用的硫化镉层的方法

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ATE517947T1 (de) * 2005-12-21 2011-08-15 Dow Corning Silikonharzfilm, herstellungsverfahren dafür und nanomaterialgefüllte silikonzusammensetzung
KR101426316B1 (ko) * 2006-01-19 2014-08-06 다우 코닝 코포레이션 실리콘 수지 필름, 이의 제조방법, 및 나노물질로 충전된실리콘 조성물
CN101379153B (zh) * 2006-02-02 2011-12-28 陶氏康宁公司 有机硅树脂膜，其制备方法和纳米材料填充的有机硅组合物
US8084097B2 (en) * 2006-02-20 2011-12-27 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
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US20100087581A1 (en) * 2007-02-22 2010-04-08 Mark Fisher Reinforced Silicone Resin Film and Method of Preparing Same
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KR101684800B1 (ko) * 2015-10-07 2016-12-08 고려대학교 산학협력단 플라즈마처리를 이용한 ＣｄＴｅ 박막형성방법 및 이에 의해 제조된 ＣｄＴｅ 태양전지
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102127745A (zh) * 2009-12-15 2011-07-20 初星太阳能公司 用于连续沉积薄膜层到基底上的模块系统和方法
CN102127745B (zh) * 2009-12-15 2014-01-29 初星太阳能公司 用于连续沉积薄膜层到基底上的模块系统和方法
CN101805562A (zh) * 2010-03-26 2010-08-18 陈俊光 硅树脂型涂敷料及其制备方法
CN101805562B (zh) * 2010-03-26 2013-01-02 陈俊光 硅树脂型涂敷料及其制备方法
CN102453863A (zh) * 2010-10-27 2012-05-16 初星太阳能公司 溅射基于碲化镉的薄膜光伏器件中使用的硫化镉层的方法
CN102453863B (zh) * 2010-10-27 2015-11-25 初星太阳能公司 溅射基于碲化镉的薄膜光伏器件中使用的硫化镉层的方法

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Publication number Publication date
WO2007120905A9 (en) 2007-12-13
KR20080112381A (ko) 2008-12-24
JP2013080943A (ja) 2013-05-02
WO2007120905A2 (en) 2007-10-25
EP2016626A2 (en) 2009-01-21
US20090090413A1 (en) 2009-04-09
JP2009534840A (ja) 2009-09-24
EP2333841A2 (en) 2011-06-15
EP2333841A3 (en) 2013-06-05
JP5253380B2 (ja) 2013-07-31
WO2007120905A3 (en) 2008-04-17

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