CN101461293B - 电路载体及其制造方法 - Google Patents
电路载体及其制造方法 Download PDFInfo
- Publication number
- CN101461293B CN101461293B CN2007800208703A CN200780020870A CN101461293B CN 101461293 B CN101461293 B CN 101461293B CN 2007800208703 A CN2007800208703 A CN 2007800208703A CN 200780020870 A CN200780020870 A CN 200780020870A CN 101461293 B CN101461293 B CN 101461293B
- Authority
- CN
- China
- Prior art keywords
- layer
- glass
- carrier
- circuit carrier
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011521 glass Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000011148 porous material Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 239000003989 dielectric material Substances 0.000 claims description 29
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- 239000012876 carrier material Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 4
- 239000006071 cream Substances 0.000 claims description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 230000001680 brushing effect Effects 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 2
- 229910017083 AlN Inorganic materials 0.000 claims 1
- 239000008393 encapsulating agent Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 244000309464 bull Species 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004587 chromatography analysis Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- -1 this Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/02—Feeding of components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/18—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0116—Porous, e.g. foam
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/017—Glass ceramic coating, e.g. formed on inorganic substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1147—Sealing or impregnating, e.g. of pores
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1333—Deposition techniques, e.g. coating
- H05K2203/1366—Spraying coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Laminated Bodies (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
本发明涉及一种电路载体,其包括金属的载体层,在载体层上至少局部设置介电层,该介电层具有许多细孔,细孔至少在介电层的背离载体层的一侧用玻璃密封,其中介电层的背离载体层的一侧的表面在用玻璃密封的细孔的区域之外没有玻璃。本发明还涉及一种用于制造该电路载体的方法。
Description
技术领域
本发明涉及一种电路载体及其制造方法。
背景技术
这种电路载体优选应用在大功率电子装置的领域内,特别是在汽车的发动机舱的高温应用领域内。
每个电气的或电子的电路的工作与废热的产生相关联,为了避免损害工作或者破坏电路,它们必须尽可能快地排出。特别是大功率电子装置在工作时展现出非常大量的废热。在高温应用中超过100℃的较高环境温度(在汽车的发动机舱的一定区域内例如大约150℃)使之困难。为了实现废热的尽可能快的排出,电气的或电子的电路设置在电路载体上,其金属的载体材料可以起到电路的冷却体的作用。
介电材料层大多数构成得远薄于由金属材料构成的层,介电材料层用于将设置于介电材料层上的各个印制导线与金属的载体材料电绝缘。此外可以选择这样一种介电材料,其特点在于非常低的热阻,使得设置在介电材料层上的电气的或电子的构件的废热可以尽可能快地通过金属的载体元件排出。
介电层可以在其制造之后具有许多细孔。由于不同原因可能必要的是,这些细孔用密封材料密封。例如细孔的存在损害介电材料层的电绝缘性能,这尤其是在潮湿的工作环境中可能是有问题的。由于湿气进入到细孔内,可能在印制导线与金属的载体材料之间发生电短路。
按照制造方法的不同情况,形成细孔的问题出现不同的程度。特别是这样一些方法与形成细孔的问题有关,在这些方法中介电材料层以热式喷射方法施加到金属的载体材料上。
这种方法例如描述于GB 990 023、GB 1 461 031和EP 115 412 A2 中。尽管热式喷射方法本身非常良好地适合于将介电材料施加到金属的载体材料上,但是出现如下问题,即喷射的介电材料层具有许多细孔,这可能明显降低介电材料层的电绝缘能力。细孔的存在在潮湿环境中是特别有问题的。
例如EP 48 992 A2描述一种方法,其中在热式喷射介电材料层之后将用于密封细孔的树脂涂刷到介电材料层上。由DE 195 29 627 C1同样得知通过施加环氧树脂来密封细孔。此外也描述了通过在600℃至800℃之间的温度范围内熔化的陶瓷釉来密封细孔。
树脂材料的采用在其涉及相对耗费的方法方面是不利的,因为树脂必须在合适的型模中硬化(例如通过聚合,见EP 48 992 A2)。另外在DE 195 29 627 C1中附加描述的来自陶瓷行业的陶瓷釉的施加对于在上述说明的温度中熔化的陶瓷釉大大含铅时是不利的,并且因此在大多数国家不再允许应用。另外已经证实,这种陶瓷釉经常本身是有细孔的,使得施加到介电材料层上的薄膜本身可能有孔。在这种情况下根本不能排除短路的发生。
发明内容
本发明的目的在于,提供一种电路载体及其制造方法,该电路载体避免现有技术的上述缺点。
所述目的通过一种这样的电路载体达到,该电路载体包括金属的载体层,在载体层上至少局部设置介电层,该介电层具有许多细孔,细孔至少在介电层的背离载体层的一侧用玻璃密封,其中介电层的背离载体层的一侧的表面在用玻璃密封的细孔的区域之外基本上没有玻璃。所述目的还通过一种用于制造所述电路载体的方法达到,在该方法中将一个介电材料层施加到金属的载体材料上,其中,在施加介电材料层期间或之后,将玻璃施加到电路载体上。
按本发明规定的将玻璃作为密封材料的使用相对于树脂的使用具有如下优点,即玻璃不必在单独的工步中硬化。
特别是可以设定,玻璃在热式喷射方法中施加。优选这与介电材 料层(简称介电层)的热式喷射同时进行。在这两种情况中玻璃的硬化通过冷却自动进行。
也可以设定,玻璃涂刷或套印(例如用丝网印刷法)到介电材料层上。在这种情况下可以在炉子中进行硬化。
相对于在现有技术中描述的陶瓷釉的施加,玻璃的应用具有如下优点,即玻璃不必含铅并且在施加之后本身还没有孔。
特别有利地设定,介电层的背离载体层的一侧的表面基本上没有玻璃。这可以通过从介电层的表面去除玻璃或者在采用热式喷射方法的情况下通过选择合适的工艺参数而达到。
在密封的介电层上可以按已知的方式施加印制导线。制成的电路载体可以具有电气的和/或电子的构件。为了产生印制导线,可以将导电的膏施加到介电层上并且紧接着烘烤。膏的施加可以优选以丝网印刷或者喷射方法进行。
例如对于介电层可以采用陶瓷材料,优选氧化铝(Al2O3)或者氮化铝(AlN)。
例如可以设定,采用的玻璃由三氧化二铋、氧化铝、二氧化硅或者三氧化二硼或者两种或更多种上述组分的混合物制成。在一种可能的实施例中可以设定,采用的玻璃由55%的三氧化二铋、21%的氧化铝、14%的二氧化硅和10%的三氧化二硼制成。合适的玻璃可以例如由公司Ferro Corporation,1000Lakeside Avenue,Cleveland,Ohio44114-7000,USA)(www.ferro.com)得到。
细孔的期望的密封可以用一定量的密封材料(玻璃)达到,该量为介电材料和密封材料(玻璃)的总量的大约5%至30%。
金属的载体层例如可以由铝或铜制成。
如果选择等离子喷射作为热式喷射方法,那么应当注意,大多数以粉末形式存在的密封材料以这样的颗粒尺寸和融化温度进行选择,使得密封材料直至必要的喷射温度例如2100℃可以无燃烧地喷射到金属的载体材料上。
例如可以采用颗粒尺寸为5μm至60μm(典型为5.6μm或22.5μm) 且熔化温度为2050℃的Al2O3粉末。
在所有实施例中优选设定,由金属的载体材料构成的层同时用作为电路载体的所有部件的机械刚性的载体。
附图说明
由附图以及相关的描述得出本发明的各实施形式的其它优点和细节。其中:
图1示意显示用于执行按本发明的方法的装置;
图2a、2b、2c显示通过本发明的方法装置的电路载体的俯视图、侧视图和详图。
具体实施方式
图1显示将介电材料层3热式喷射到电路载体1的由金属的载体材料制成的层2上。示意描述具有阴极14和阳极15的等离子枪13。箭头16表示等离子气体的输送。通过高频点火在阴极14和阳极15之间形成电弧,这导致等离子气体的电离。这样产生的等离子以高的速度(大约300至700m/s)和大约15000至20000℃的温度离开烧嘴。通过加入装置17将需要施加到层2上的材料(通过箭头18表示)加入到等离子射束中,因此该材料通过等离子射束熔化并且加速到高的速度。熔化的材料以高的速度撞到金属的载体层2上(射束19)并且在那里沉积为介电材料层3(简称介电层3)。在一种优选的实施形式中,由密封材料(玻璃9)和介电材料构成的混合物共同通过加入装置17加入到等离子射束中。
图2a以俯视图示例显示一个电路载体1,在该电路载体的介电材料层3上设置印制导线4以及电气的或电子的构件5。在该实施例中,金属的载体层2由铝制成,其在热式喷射之前借助于喷砂技术进行清洁和打毛。在金属的载体层2的四个角部上设置孔8,通过它们可以以后螺纹连接电路载体1。在图2a中还可见二十四极的多头连接器6以及九极的多头连接器7。所描述的电气的或电子的构件5涉及微控 制器、调节器、触发回路、大功率晶体管和电阻。
在热式喷射介电层3之后套印印制导线4并且紧接着在400℃至530℃之间的温度进行烧结。在印刷的印制导线4上紧接着借助于模板印刷(Schablonendruck)施加一个焊膏层,在焊膏层内配入电气的或电子的构件5。
配备的构件5和多头连接器6、7同时钎焊在电路载体1上。
为了获得电气的或电子的构件5的理想散热,所有的电气的或电子的构件5直接地(即没有中间载体地)装配在电路载体1上(在电路载体的介电层3上)。
在图2b中描述按本发明的电路载体1的层结构。该图当然不是符合尺寸的。例如金属的载体层的厚度可以为2至10mm,典型地为1至5mm,而介电层3通常具有30μm至70μm的厚度。
图2c在介电层3的区域内显示描述于图2a和2b中的电路载体1的详图。可见设置于介电层3中的细孔20,它们通过玻璃9密封。另外可见,介电层3的表面在细孔20的区域之外基本上是没有玻璃的。
Claims (15)
1.电路载体,其包括金属的载体层,在载体层上至少局部设置介电层,该介电层具有许多细孔,细孔(20)至少在介电层(3)的背离载体层(2)的一侧用玻璃(9)密封,其特征在于:介电层(3)的背离载体层(2)的一侧的表面在用玻璃(9)密封的细孔(20)的区域之外没有玻璃(9)。
2.根据权利要求1所述的电路载体,其特征在于:在介电层(3)上设置印制导线(4、4′)。
3.根据权利要求1或2所述的电路载体,其特征在于:在电路载体(1)上设置电气的和/或电子的构件(5)。
4.根据权利要求1或2所述的电路载体,其特征在于:介电层(3)的材料是陶瓷材料。
5.根据权利要求4所述的电路载体,其特征在于,介电层(3)的材料是氧化铝或氮化铝。
6.根据权利要求1或2所述的电路载体,其特征在于:玻璃(9)由三氧化二铋、氧化铝、二氧化硅或者三氧化二硼或者两种或更多种上述组分的混合物制成。
7.根据权利要求6所述的电路载体,其特征在于:玻璃由55%的三氧化二铋、21%的氧化铝、14%的二氧化硅和10%的三氧化二硼制成。
8.根据权利要求1或2所述的电路载体,其特征在于:玻璃(9)的量为介电材料和玻璃(9)的总量的5%至30%。
9.用于制造根据权利要求1至8之一所述的电路载体的方法,在该方法中将一个介电材料层施加到金属的载体材料上,其特征在于:在施加介电材料层期间或之后,将玻璃(9)施加到电路载体(1)上。
10.根据权利要求9所述的方法,其特征在于:介电材料层以丝网印刷方法施加到金属的载体层(2)上。
11.根据权利要求9或10所述的方法,其特征在于:将玻璃(9)涂刷或套印到介电材料层上。
12.根据权利要求9所述的方法,其特征在于:介电材料层热式喷射到金属的载体层(2)上。
13.根据权利要求12所述的方法,其特征在于:介电材料层与玻璃(9)一起热式喷射到金属的载体层(2)上。
14.根据权利要求9或10所述的方法,其特征在于:为了产生印制导线(4、4′),将导电的膏施加到介电层(3)上并且紧接着烘烤。
15.根据权利要求14所述的方法,其特征在于:以丝网印刷或者喷射方法将导电的膏施加到介电层(3)上并且紧接着烘烤。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ATA973/2006 | 2006-06-07 | ||
AT0097306A AT503706B1 (de) | 2006-06-07 | 2006-06-07 | Schaltungsträger |
PCT/AT2007/000254 WO2007140494A1 (de) | 2006-06-07 | 2007-05-25 | Schaltungsträger |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101461293A CN101461293A (zh) | 2009-06-17 |
CN101461293B true CN101461293B (zh) | 2011-12-07 |
Family
ID=38606495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800208703A Expired - Fee Related CN101461293B (zh) | 2006-06-07 | 2007-05-25 | 电路载体及其制造方法 |
Country Status (18)
Country | Link |
---|---|
US (1) | US8134083B2 (zh) |
EP (1) | EP2025210B1 (zh) |
KR (1) | KR20090026270A (zh) |
CN (1) | CN101461293B (zh) |
AT (2) | AT503706B1 (zh) |
CA (1) | CA2659695C (zh) |
DK (1) | DK2025210T3 (zh) |
ES (1) | ES2382752T3 (zh) |
HK (1) | HK1133989A1 (zh) |
MX (1) | MX2008015669A (zh) |
MY (1) | MY149242A (zh) |
PL (1) | PL2025210T3 (zh) |
PT (1) | PT2025210E (zh) |
RU (1) | RU2454841C2 (zh) |
SG (1) | SG174762A1 (zh) |
SI (1) | SI2025210T1 (zh) |
TW (1) | TW200814880A (zh) |
WO (1) | WO2007140494A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITMO20060322A1 (it) * | 2006-10-12 | 2008-04-13 | Maria Prudenziati | Tecnica innovativa per il miglioramento delle caratteristiche dielettriche e di anticorrosione di ricoprimenti ottenuti con tecnologie thermal spray, aps, hvof e analoghe, in particolare di riporti isolanti quali ad es. a1203. |
DE102011004171A1 (de) * | 2011-02-15 | 2012-08-16 | Brose Fahrzeugteile GmbH & Co. Kommanditgesellschaft, Würzburg | Temperierelement und Verfahren zur Befestigung eines Elektrobauteils an dem Temperierelement |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB990023A (en) | 1961-03-13 | 1965-04-22 | Ass Elect Ind | Improvements relating to printed electrical circults |
US3202591A (en) * | 1961-11-24 | 1965-08-24 | Electralab Printed Electronics | Method of making an electric circuit structure |
US3340164A (en) * | 1963-12-26 | 1967-09-05 | Sperry Rand Corp | Method of copper plating anodized aluminum |
GB1461031A (en) | 1975-01-07 | 1977-01-13 | Standard Telephones Cables Ltd | Thick film circuits |
DE3176951D1 (en) | 1980-09-30 | 1989-01-12 | Toshiba Kk | Printed circuit board and method for fabricating the same |
CS219732B1 (en) * | 1981-01-21 | 1983-03-25 | Radomir Kuzel | Method of making the isolation coatings on the steel products |
SU1108962A1 (ru) * | 1983-01-06 | 1995-04-10 | В.М. Тюлькин | Способ уменьшения дефектности двухслойного диэлектрика в структуре проводник - нитрид кремния - окисел кремния - полупроводник |
GB8302216D0 (en) | 1983-01-27 | 1983-03-02 | United Kingdom Aromic Energy A | Coating for electronic substrate |
JPS6028296A (ja) * | 1983-07-27 | 1985-02-13 | 株式会社日立製作所 | セラミツク多層配線回路板 |
US4544577A (en) * | 1984-04-26 | 1985-10-01 | E. F. Johnson Company | Process for metallization of dielectric substrate through holes |
JPS61571A (ja) * | 1984-06-12 | 1986-01-06 | Showa Denko Kk | 複合基板の製造方法 |
US4700276A (en) * | 1986-01-03 | 1987-10-13 | Motorola Inc. | Ultra high density pad array chip carrier |
US4700473A (en) * | 1986-01-03 | 1987-10-20 | Motorola Inc. | Method of making an ultra high density pad array chip carrier |
US4797992A (en) * | 1987-02-02 | 1989-01-17 | Hercules Defense Electronics Systems Inc. | Method of making a thin film integrated microcircuit |
DE68912932T2 (de) * | 1989-05-12 | 1994-08-11 | Ibm Deutschland | Glas-Keramik-Gegenstand und Verfahren zu dessen Herstellung. |
RU2083064C1 (ru) * | 1992-03-10 | 1997-06-27 | Кемеровский государственный университет | Способ изготовления электропроводящих серебряных покрытий |
US5686790A (en) * | 1993-06-22 | 1997-11-11 | Candescent Technologies Corporation | Flat panel device with ceramic backplate |
US5740603A (en) * | 1995-07-31 | 1998-04-21 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing low dielectric constant multiple layer ceramic circuit board |
DE19529627C1 (de) * | 1995-08-11 | 1997-01-16 | Siemens Ag | Thermisch leitende, elektrisch isolierende Verbindung und Verfahren zu seiner Herstellung |
GB9519888D0 (en) * | 1995-09-29 | 1995-11-29 | Atomic Energy Authority Uk | Electrically isolating coating layers |
TW388043B (en) * | 1997-04-15 | 2000-04-21 | Sanyo Electric Co | Solid electrolyte capacitor |
US6716554B2 (en) * | 1999-04-08 | 2004-04-06 | Quallion Llc | Battery case, cover, and feedthrough |
US6835785B2 (en) * | 2002-01-28 | 2004-12-28 | Mitsubishi Gas Chemical Company, Inc. | Polyphenylene ether oligomer compound, derivatives thereof and use thereof |
RU2254695C1 (ru) * | 2003-09-18 | 2005-06-20 | Марийский государственный университет | Способ формирования трехмерной толстопленочной схемы |
US7569165B2 (en) * | 2005-03-09 | 2009-08-04 | E. I. Du Pont De Nemours And Company | Black conductive compositions, black electrodes, and methods of forming thereof |
US7824579B2 (en) * | 2005-06-07 | 2010-11-02 | E. I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
-
2006
- 2006-06-07 AT AT0097306A patent/AT503706B1/de not_active IP Right Cessation
-
2007
- 2007-05-25 CA CA2659695A patent/CA2659695C/en not_active Expired - Fee Related
- 2007-05-25 PL PL07718465T patent/PL2025210T3/pl unknown
- 2007-05-25 PT PT07718465T patent/PT2025210E/pt unknown
- 2007-05-25 MY MYPI20084961A patent/MY149242A/en unknown
- 2007-05-25 DK DK07718465.3T patent/DK2025210T3/da active
- 2007-05-25 SG SG2011063203A patent/SG174762A1/en unknown
- 2007-05-25 CN CN2007800208703A patent/CN101461293B/zh not_active Expired - Fee Related
- 2007-05-25 RU RU2008152823/07A patent/RU2454841C2/ru not_active IP Right Cessation
- 2007-05-25 AT AT07718465T patent/ATE546980T1/de active
- 2007-05-25 KR KR1020087029507A patent/KR20090026270A/ko not_active Application Discontinuation
- 2007-05-25 ES ES07718465T patent/ES2382752T3/es active Active
- 2007-05-25 WO PCT/AT2007/000254 patent/WO2007140494A1/de active Application Filing
- 2007-05-25 MX MX2008015669A patent/MX2008015669A/es active IP Right Grant
- 2007-05-25 SI SI200730920T patent/SI2025210T1/sl unknown
- 2007-05-25 EP EP07718465A patent/EP2025210B1/de not_active Not-in-force
- 2007-06-01 TW TW096119639A patent/TW200814880A/zh not_active IP Right Cessation
-
2008
- 2008-12-03 US US12/314,086 patent/US8134083B2/en not_active Expired - Fee Related
-
2009
- 2009-11-10 HK HK09110474.5A patent/HK1133989A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
SI2025210T1 (sl) | 2012-06-29 |
WO2007140494A1 (de) | 2007-12-13 |
ATE546980T1 (de) | 2012-03-15 |
CN101461293A (zh) | 2009-06-17 |
TWI368467B (zh) | 2012-07-11 |
RU2008152823A (ru) | 2010-07-20 |
CA2659695A1 (en) | 2007-12-13 |
EP2025210B1 (de) | 2012-02-22 |
US8134083B2 (en) | 2012-03-13 |
CA2659695C (en) | 2013-03-12 |
SG174762A1 (en) | 2011-10-28 |
KR20090026270A (ko) | 2009-03-12 |
PL2025210T3 (pl) | 2012-07-31 |
AT503706B1 (de) | 2011-07-15 |
AT503706A1 (de) | 2007-12-15 |
MX2008015669A (es) | 2009-03-25 |
PT2025210E (pt) | 2012-04-13 |
MY149242A (en) | 2013-07-31 |
US20090205858A1 (en) | 2009-08-20 |
DK2025210T3 (da) | 2012-04-30 |
RU2454841C2 (ru) | 2012-06-27 |
ES2382752T3 (es) | 2012-06-13 |
TW200814880A (en) | 2008-03-16 |
EP2025210A1 (de) | 2009-02-18 |
HK1133989A1 (en) | 2010-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102163532B1 (ko) | 반도체 장치, 세라믹스 회로 기판 및 반도체 장치의 제조 방법 | |
US20220000965A1 (en) | Method of fabricating an electronic power module by additive manufacturing, and associated substrate and module | |
CA2381716C (en) | Aluminum substrate thick film heater | |
JP2006179856A (ja) | 絶縁基板および半導体装置 | |
JP6096094B2 (ja) | 積層体、絶縁性冷却板、パワーモジュールおよび積層体の製造方法 | |
KR101393760B1 (ko) | 세라믹스 기판과 금속 박막의 접합방법 | |
CN104365185A (zh) | 包括导电的基板的、特别是用于功率电子模块的印刷电路板 | |
CN104093271B (zh) | 一种减小ltcc基板与金属底板焊接空洞的方法及ltcc基板结构 | |
US10692794B2 (en) | Radiation plate structure, semiconductor device, and method for manufacturing radiation plate structure | |
KR101591315B1 (ko) | 세라믹 히터 | |
US11147851B2 (en) | Method of fabricating an electronic power module by additive manufacturing, and associated substrate and module | |
CN101461293B (zh) | 电路载体及其制造方法 | |
US6207221B1 (en) | Process for producing a metal-ceramic substrate and a metal-ceramic substrate | |
RU2490237C2 (ru) | Металлизированная керамическая подложка для электронных силовых модулей и способ металлизации керамики | |
KR910009991B1 (ko) | 형광표시관 및 그의 제조방법 | |
RU2384027C2 (ru) | Способ изготовления микросхем | |
CN104319242B (zh) | 厚膜基板无焊料共晶贴装方法 | |
JP2007250347A (ja) | 半導体集積回路装置及びその製造方法 | |
JPWO2015025347A1 (ja) | 電子回路基板、それを用いた半導体装置及びその製造方法 | |
CN116347682A (zh) | 表面型加热元件及制造方法 | |
JPH04280654A (ja) | 集積回路を有する基板上への金属容器の組立て法 | |
JP2002232090A (ja) | セラミック回路基板 | |
KR102358886B1 (ko) | 면상 발열체 및 그 제조방법 | |
JP2012064616A (ja) | 高放熱型電子部品収納用パッケージ | |
EP3751958B1 (en) | Surface type heating element and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1133989 Country of ref document: HK |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1133989 Country of ref document: HK |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111207 Termination date: 20170525 |