CN101461137B - 功率晶体管减少电感反激期间的电压瞬变的转换速率控制装置和方法 - Google Patents

功率晶体管减少电感反激期间的电压瞬变的转换速率控制装置和方法 Download PDF

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Publication number
CN101461137B
CN101461137B CN2007800205226A CN200780020522A CN101461137B CN 101461137 B CN101461137 B CN 101461137B CN 2007800205226 A CN2007800205226 A CN 2007800205226A CN 200780020522 A CN200780020522 A CN 200780020522A CN 101461137 B CN101461137 B CN 101461137B
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China
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coupled
current
resistive element
switch
current source
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Expired - Fee Related
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CN2007800205226A
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English (en)
Chinese (zh)
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CN101461137A (zh
Inventor
保罗·T·班尼特
兰德尔·C·格雷
马修·D·汤普森
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching

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  • Electronic Switches (AREA)
CN2007800205226A 2006-06-02 2007-04-06 功率晶体管减少电感反激期间的电压瞬变的转换速率控制装置和方法 Expired - Fee Related CN101461137B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/445,652 US7365584B2 (en) 2006-06-02 2006-06-02 Slew-rate control apparatus and methods for a power transistor to reduce voltage transients during inductive flyback
US11/445,652 2006-06-02
PCT/US2007/066121 WO2007143270A2 (en) 2006-06-02 2007-04-06 Slew-rate control apparatus and methods for a power transistor to reduce voltage transients during inductive flyback

Publications (2)

Publication Number Publication Date
CN101461137A CN101461137A (zh) 2009-06-17
CN101461137B true CN101461137B (zh) 2012-09-26

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CN2007800205226A Expired - Fee Related CN101461137B (zh) 2006-06-02 2007-04-06 功率晶体管减少电感反激期间的电压瞬变的转换速率控制装置和方法

Country Status (5)

Country Link
US (1) US7365584B2 (enExample)
JP (1) JP5031828B2 (enExample)
CN (1) CN101461137B (enExample)
TW (1) TW200746636A (enExample)
WO (1) WO2007143270A2 (enExample)

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CN102832923B (zh) * 2012-09-06 2014-12-31 中达电通股份有限公司 双向传输电路
JP6317994B2 (ja) * 2014-05-08 2018-04-25 日立オートモティブシステムズ株式会社 誘導負荷駆動回路
US9595947B2 (en) * 2014-09-30 2017-03-14 Stmicroelectronics S.R.L. Driver device for transistors, and corresponding integrated circuit
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JP6271461B2 (ja) * 2015-03-09 2018-01-31 株式会社東芝 半導体装置
US9893724B2 (en) * 2015-07-31 2018-02-13 Texas Instruments Incorporated Isolated output switching circuit
US10468983B2 (en) * 2015-11-05 2019-11-05 Silicon Laboratories Inc. Slew-rate controlled supply voltage switching
JP6679992B2 (ja) * 2016-03-03 2020-04-15 株式会社デンソー 半導体装置
US10181813B2 (en) 2016-10-27 2019-01-15 Power Integrations, Inc. Half-bridge inverter modules with advanced protection through high-side to low-side control block communication
JP2018139346A (ja) * 2017-02-24 2018-09-06 ルネサスエレクトロニクス株式会社 半導体装置及びそれを備えた電子制御システム
JP2019054349A (ja) * 2017-09-13 2019-04-04 パナソニックＩｐマネジメント株式会社 ゲート駆動回路、および、パワースイッチングシステム
CN108377093B (zh) * 2018-04-13 2023-11-07 深圳鹏城新能科技有限公司 一种防止单相光伏逆变拓扑功率管过压击穿的acrcd钳位电路
US10181852B1 (en) 2018-06-19 2019-01-15 Nxp B.V. Voltage translator with output slew rate control
US11009551B2 (en) * 2018-06-25 2021-05-18 Nanya Technology Corporation Device and method of analyzing transistor and non-transitory computer readable medium
US10651649B1 (en) * 2018-12-14 2020-05-12 Hamilton Sundstrand Corporation Discrete voltage/ open input
CN110380598A (zh) * 2019-07-11 2019-10-25 清华大学 基于混合动态电压平衡的器件耐压提高方法及装置
CN112858944A (zh) * 2019-11-08 2021-05-28 株洲中车时代电气股份有限公司 一种通用型变流器模块化负载系统及其控制方法
JP7232788B2 (ja) * 2020-03-23 2023-03-03 日立Astemo株式会社 半導体装置、パワーモジュール、インバータ装置、および電動車両
TWI722975B (zh) * 2020-11-23 2021-03-21 湛積股份有限公司 可控制主動箝位功能之開關電路
US11641198B1 (en) * 2021-11-30 2023-05-02 Texas Instruments Incorporated Wide voltage gate driver using low gate oxide transistors
US20240146298A1 (en) * 2022-10-31 2024-05-02 Texas Instruments Incorporated Adjustable power fet driver
US11996847B1 (en) 2022-11-29 2024-05-28 Texas Instruments Incorporated Power transistor adaptive clamp circuit
KR20250060552A (ko) * 2023-10-26 2025-05-07 삼성에스디아이 주식회사 돌입전류 저감 회로

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CN1607729A (zh) * 2003-10-14 2005-04-20 恩益禧电子股份有限公司 输出电路

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US6078204A (en) * 1996-12-19 2000-06-20 Texas Instruments Incorporated High current drain-to-gate clamp/gate-to-source clamp for external power MOS transistors
US5920224A (en) * 1998-02-17 1999-07-06 Harris Corporation Network for improving electro-magnetic interference response
CN1325563A (zh) * 1998-10-30 2001-12-05 美国西门子汽车公司 组合的电压和电流转换速率限制
CN1607729A (zh) * 2003-10-14 2005-04-20 恩益禧电子股份有限公司 输出电路

Also Published As

Publication number Publication date
CN101461137A (zh) 2009-06-17
US7365584B2 (en) 2008-04-29
US20070279106A1 (en) 2007-12-06
WO2007143270A2 (en) 2007-12-13
WO2007143270A3 (en) 2008-11-20
JP2009540631A (ja) 2009-11-19
JP5031828B2 (ja) 2012-09-26
TW200746636A (en) 2007-12-16

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