JP5031828B2 - 誘導性フライバックが発生している状態の過渡電圧を低減したパワートランジスタのスルーレート制御装置及び方法 - Google Patents

誘導性フライバックが発生している状態の過渡電圧を低減したパワートランジスタのスルーレート制御装置及び方法 Download PDF

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JP5031828B2
JP5031828B2 JP2009513349A JP2009513349A JP5031828B2 JP 5031828 B2 JP5031828 B2 JP 5031828B2 JP 2009513349 A JP2009513349 A JP 2009513349A JP 2009513349 A JP2009513349 A JP 2009513349A JP 5031828 B2 JP5031828 B2 JP 5031828B2
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current source
current
transistor
switch
clamp
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JP2009513349A
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Japanese (ja)
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JP2009540631A (ja
JP2009540631A5 (enExample
Inventor
ティー． ベネット、ポール
シー． グレイ、ランドール
ディー． トンプソン、マシュー
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching

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  • Electronic Switches (AREA)
JP2009513349A 2006-06-02 2007-04-06 誘導性フライバックが発生している状態の過渡電圧を低減したパワートランジスタのスルーレート制御装置及び方法 Expired - Fee Related JP5031828B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/445,652 US7365584B2 (en) 2006-06-02 2006-06-02 Slew-rate control apparatus and methods for a power transistor to reduce voltage transients during inductive flyback
US11/445,652 2006-06-02
PCT/US2007/066121 WO2007143270A2 (en) 2006-06-02 2007-04-06 Slew-rate control apparatus and methods for a power transistor to reduce voltage transients during inductive flyback

Publications (3)

Publication Number Publication Date
JP2009540631A JP2009540631A (ja) 2009-11-19
JP2009540631A5 JP2009540631A5 (enExample) 2010-05-13
JP5031828B2 true JP5031828B2 (ja) 2012-09-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009513349A Expired - Fee Related JP5031828B2 (ja) 2006-06-02 2007-04-06 誘導性フライバックが発生している状態の過渡電圧を低減したパワートランジスタのスルーレート制御装置及び方法

Country Status (5)

Country Link
US (1) US7365584B2 (enExample)
JP (1) JP5031828B2 (enExample)
CN (1) CN101461137B (enExample)
TW (1) TW200746636A (enExample)
WO (1) WO2007143270A2 (enExample)

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CN102832923B (zh) * 2012-09-06 2014-12-31 中达电通股份有限公司 双向传输电路
JP6317994B2 (ja) * 2014-05-08 2018-04-25 日立オートモティブシステムズ株式会社 誘導負荷駆動回路
US9595947B2 (en) * 2014-09-30 2017-03-14 Stmicroelectronics S.R.L. Driver device for transistors, and corresponding integrated circuit
US11088609B2 (en) * 2014-11-14 2021-08-10 Keithley Instruments, Llc Low noise power supply MOSFET gate drive scheme
JP6271461B2 (ja) * 2015-03-09 2018-01-31 株式会社東芝 半導体装置
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US10468983B2 (en) * 2015-11-05 2019-11-05 Silicon Laboratories Inc. Slew-rate controlled supply voltage switching
JP6679992B2 (ja) * 2016-03-03 2020-04-15 株式会社デンソー 半導体装置
US10181813B2 (en) 2016-10-27 2019-01-15 Power Integrations, Inc. Half-bridge inverter modules with advanced protection through high-side to low-side control block communication
JP2018139346A (ja) * 2017-02-24 2018-09-06 ルネサスエレクトロニクス株式会社 半導体装置及びそれを備えた電子制御システム
JP2019054349A (ja) * 2017-09-13 2019-04-04 パナソニックＩｐマネジメント株式会社 ゲート駆動回路、および、パワースイッチングシステム
CN108377093B (zh) * 2018-04-13 2023-11-07 深圳鹏城新能科技有限公司 一种防止单相光伏逆变拓扑功率管过压击穿的acrcd钳位电路
US10181852B1 (en) 2018-06-19 2019-01-15 Nxp B.V. Voltage translator with output slew rate control
US11009551B2 (en) * 2018-06-25 2021-05-18 Nanya Technology Corporation Device and method of analyzing transistor and non-transitory computer readable medium
US10651649B1 (en) * 2018-12-14 2020-05-12 Hamilton Sundstrand Corporation Discrete voltage/ open input
CN110380598A (zh) * 2019-07-11 2019-10-25 清华大学 基于混合动态电压平衡的器件耐压提高方法及装置
CN112858944A (zh) * 2019-11-08 2021-05-28 株洲中车时代电气股份有限公司 一种通用型变流器模块化负载系统及其控制方法
JP7232788B2 (ja) * 2020-03-23 2023-03-03 日立Astemo株式会社 半導体装置、パワーモジュール、インバータ装置、および電動車両
TWI722975B (zh) * 2020-11-23 2021-03-21 湛積股份有限公司 可控制主動箝位功能之開關電路
US11641198B1 (en) * 2021-11-30 2023-05-02 Texas Instruments Incorporated Wide voltage gate driver using low gate oxide transistors
US20240146298A1 (en) * 2022-10-31 2024-05-02 Texas Instruments Incorporated Adjustable power fet driver
US11996847B1 (en) 2022-11-29 2024-05-28 Texas Instruments Incorporated Power transistor adaptive clamp circuit
KR20250060552A (ko) * 2023-10-26 2025-05-07 삼성에스디아이 주식회사 돌입전류 저감 회로

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Also Published As

Publication number Publication date
CN101461137A (zh) 2009-06-17
US7365584B2 (en) 2008-04-29
US20070279106A1 (en) 2007-12-06
CN101461137B (zh) 2012-09-26
WO2007143270A2 (en) 2007-12-13
WO2007143270A3 (en) 2008-11-20
JP2009540631A (ja) 2009-11-19
TW200746636A (en) 2007-12-16

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