JP2018109942A - 電圧調整器の出力のアンダーシュートを低減する電子回路 - Google Patents
電圧調整器の出力のアンダーシュートを低減する電子回路 Download PDFInfo
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- JP2018109942A JP2018109942A JP2017173706A JP2017173706A JP2018109942A JP 2018109942 A JP2018109942 A JP 2018109942A JP 2017173706 A JP2017173706 A JP 2017173706A JP 2017173706 A JP2017173706 A JP 2017173706A JP 2018109942 A JP2018109942 A JP 2018109942A
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- undershoot
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- 238000006243 chemical reaction Methods 0.000 description 7
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- 229910044991 metal oxide Inorganic materials 0.000 description 4
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- 230000001052 transient effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
Description
〔システムおよび回路の説明〕
〔シミュレートされたパフォーマンス〕
22:制御回路
24:制御信号
26、28:調整器
32:パルス発生器
36:電圧制御電流源
44:増幅器
48、60:トランジスタ
52、56、64:抵抗器
68:出力蓄電器
72:ロード
80、84、88、92、96、100、104、108:曲線
MOSFET:金属酸化物シリコン電界効果トランジスタ
VOUT:出力電圧
VREF:基準電圧
Claims (13)
- 電圧調整器及びアンダーシュート低減回路を備える電子回路であって、
前記アンダーシュート低減回路は、前記電圧調整器の出力におけるアンダーシュートを潜在的に引き起こす可能性があるイベントの指示を受信し、その指示に応じて、アンダーシュートを低減するパルスを生成して電圧調整器の出力に接続することを特徴とする、電圧調整器の出力のアンダーシュートを低減する電子回路。 - 前記アンダーシュート低減回路は、前記指示によってトリガされるパルス発生器と、前記電圧調整器の出力に接続され、前記パルス発生器によって制御される電流源とを含むことを特徴とする、請求項1に記載の電子回路。
- 前記電流源は、前記パルス発生器によってゲートが制御されるトランジスタと直列に接続された抵抗器を含むことを特徴とする、請求項2に記載の電子回路。
- 前記アンダーシュート低減回路は、前記電圧調整器の出力からのフィードバックなしに前記アンダーシュートを低減するように構成されることを特徴とする、請求項1に記載の電子回路。
- 前記イベントは、高電圧状態から低電圧状態への遷移を含むことを特徴とする、請求項1に記載の電子回路。
- 前記パルスは、一定の持続時間を有することを特徴とする、請求項1に記載の電子回路。
- 電圧調整器と、制御回路と、アンダーシュート低減回路とを備える集積回路であって、
前記制御回路は、前記電圧調整器の出力におけるアンダーシュートを潜在的に引き起こすイベントの指示を生成するように構成され、
前記アンダーシュート低減回路は、前記指示に応じて、前記アンダーシュートを低減するパルスを生成して前記電圧調整器の前記出力に接続するように構成されることを特徴とする、電圧調整器の出力のアンダーシュートを低減する集積回路。 - 前記アンダーシュート低減回路は、前記指示によってトリガされるパルス発生器と、前記電圧調整器の出力に接続され、前記パルス発生器によって制御される電流源とを備えることを特徴とする、請求項7に記載の集積回路。
- 前記電流源は、ゲートが前記パルス発生器によって制御されるトランジスタと直列に接続された抵抗器を含むことを特徴とする、請求項8に記載の集積回路。
- 前記アンダーシュート低減回路は、前記電圧調整器の出力からのフィードバックなしに前記アンダーシュートを低減するように構成されることを特徴とする、請求項7に記載の集積回路。
- 前記制御回路によって指示される前記イベントは、高電圧状態から低電圧状態への遷移を含むことを特徴とする、請求項7に記載の集積回路。
- 前記パルスは、一定の持続時間を有することを特徴とする、請求項7に記載の集積回路。
- 電圧調整器の出力におけるアンダーシュートを潜在的に引き起こす可能性のあるイベントの指示を受信するステップと、
前記指示に応じて、前記アンダーシュートを低減するパルスを生成して前記電圧調整器の出力に接続するステップと、
を含むことを特徴とする、電圧調整器の出力のアンダーシュートを低減する電圧調整方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/393,289 US10025334B1 (en) | 2016-12-29 | 2016-12-29 | Reduction of output undershoot in low-current voltage regulators |
US15/393,289 | 2016-12-29 |
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Publication Number | Publication Date |
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JP2018109942A true JP2018109942A (ja) | 2018-07-12 |
JP6785736B2 JP6785736B2 (ja) | 2020-11-18 |
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JP2017173706A Active JP6785736B2 (ja) | 2016-12-29 | 2017-09-11 | 電圧調整器の出力のアンダーシュートを低減する電子回路 |
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US (1) | US10025334B1 (ja) |
JP (1) | JP6785736B2 (ja) |
CN (1) | CN108255228B (ja) |
TW (1) | TWI662392B (ja) |
Cited By (1)
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TWI684087B (zh) * | 2019-03-11 | 2020-02-01 | 聚積科技股份有限公司 | 穩壓系統 |
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US11675378B2 (en) * | 2020-09-14 | 2023-06-13 | Sony Semiconductor Solutions Corporation | Low-dropout regulator architecture with undershoot mitigation |
CN114740939B (zh) * | 2022-04-19 | 2024-01-19 | 海光信息技术股份有限公司 | 电源产生电路、芯片及电压检测与补偿方法 |
TWI831269B (zh) * | 2022-06-30 | 2024-02-01 | 大陸商北京集創北方科技股份有限公司 | 低壓差穩壓電路、驅動晶片及電子裝置 |
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US10025334B1 (en) | 2018-07-17 |
CN108255228B (zh) | 2021-05-28 |
TWI662392B (zh) | 2019-06-11 |
JP6785736B2 (ja) | 2020-11-18 |
US20180188753A1 (en) | 2018-07-05 |
CN108255228A (zh) | 2018-07-06 |
TW201823903A (zh) | 2018-07-01 |
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