CN101415535A - 包括流体腔室阵列的夹具系统 - Google Patents
包括流体腔室阵列的夹具系统 Download PDFInfo
- Publication number
- CN101415535A CN101415535A CNA2007800120092A CN200780012009A CN101415535A CN 101415535 A CN101415535 A CN 101415535A CN A2007800120092 A CNA2007800120092 A CN A2007800120092A CN 200780012009 A CN200780012009 A CN 200780012009A CN 101415535 A CN101415535 A CN 101415535A
- Authority
- CN
- China
- Prior art keywords
- chamber
- fluid
- substrate
- depression
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012530 fluid Substances 0.000 title claims abstract description 131
- 239000000758 substrate Substances 0.000 claims abstract description 151
- 238000004891 communication Methods 0.000 claims abstract description 3
- 235000019994 cava Nutrition 0.000 claims description 2
- 238000004873 anchoring Methods 0.000 claims 1
- 230000000284 resting effect Effects 0.000 abstract 1
- 238000005086 pumping Methods 0.000 description 33
- 239000000463 material Substances 0.000 description 27
- 239000007789 gas Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- 239000007788 liquid Substances 0.000 description 13
- 238000005452 bending Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 8
- 238000001459 lithography Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000003570 air Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Mechanical Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78877706P | 2006-04-03 | 2006-04-03 | |
| US60/788,777 | 2006-04-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101415535A true CN101415535A (zh) | 2009-04-22 |
Family
ID=38656006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007800120092A Pending CN101415535A (zh) | 2006-04-03 | 2007-03-26 | 包括流体腔室阵列的夹具系统 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2007566A4 (enExample) |
| JP (2) | JP4667524B2 (enExample) |
| KR (1) | KR20090004910A (enExample) |
| CN (1) | CN101415535A (enExample) |
| TW (1) | TWI352874B (enExample) |
| WO (1) | WO2007126767A2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4854383B2 (ja) * | 2006-05-15 | 2012-01-18 | アピックヤマダ株式会社 | インプリント方法およびナノ・インプリント装置 |
| US8215946B2 (en) * | 2006-05-18 | 2012-07-10 | Molecular Imprints, Inc. | Imprint lithography system and method |
| US8652393B2 (en) * | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
| US8309008B2 (en) * | 2008-10-30 | 2012-11-13 | Molecular Imprints, Inc. | Separation in an imprint lithography process |
| US8913230B2 (en) * | 2009-07-02 | 2014-12-16 | Canon Nanotechnologies, Inc. | Chucking system with recessed support feature |
| JP5875250B2 (ja) * | 2011-04-28 | 2016-03-02 | キヤノン株式会社 | インプリント装置、インプリント方法及びデバイス製造方法 |
| JP5893303B2 (ja) * | 2011-09-07 | 2016-03-23 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
| EP3078462A1 (en) * | 2013-12-03 | 2016-10-12 | Harmotec Co., Ltd. | Holding device, holding system, control method, and conveyance device |
| JP6333031B2 (ja) * | 2014-04-09 | 2018-05-30 | キヤノン株式会社 | インプリント装置および物品の製造方法 |
| US10620532B2 (en) | 2014-11-11 | 2020-04-14 | Canon Kabushiki Kaisha | Imprint method, imprint apparatus, mold, and article manufacturing method |
| JP6647027B2 (ja) | 2015-12-03 | 2020-02-14 | キヤノン株式会社 | インプリント装置および物品製造方法 |
| JP6940944B2 (ja) * | 2016-12-06 | 2021-09-29 | キヤノン株式会社 | インプリント装置、及び物品製造方法 |
| JP7132739B2 (ja) | 2018-04-06 | 2022-09-07 | キヤノン株式会社 | インプリント装置、インプリント方法および物品製造方法 |
| JP7710350B2 (ja) | 2021-09-28 | 2025-07-18 | キヤノン株式会社 | インプリント方法、インプリント装置、および物品の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06244269A (ja) * | 1992-09-07 | 1994-09-02 | Mitsubishi Electric Corp | 半導体製造装置並びに半導体製造装置におけるウエハ真空チャック装置及びガスクリーニング方法及び窒化膜形成方法 |
| JP2000195927A (ja) * | 1998-12-28 | 2000-07-14 | Sony Corp | 真空チャック装置 |
| JP2001127144A (ja) * | 1999-08-19 | 2001-05-11 | Canon Inc | 基板吸着保持方法、基板吸着保持装置および該基板吸着保持装置を用いた露光装置ならびにデバイス製造方法 |
| US6809802B1 (en) * | 1999-08-19 | 2004-10-26 | Canon Kabushiki Kaisha | Substrate attracting and holding system for use in exposure apparatus |
| JP2001127145A (ja) * | 1999-08-19 | 2001-05-11 | Canon Inc | 基板吸着保持方法、基板吸着保持装置および該基板吸着保持装置を用いた露光装置ならびにデバイス製造方法 |
| MY133312A (en) | 2002-11-13 | 2007-11-30 | Molecular Imprints Inc | A chucking system and method for modulation shapes of substrates |
-
2007
- 2007-03-26 JP JP2009504203A patent/JP4667524B2/ja active Active
- 2007-03-26 KR KR1020087024314A patent/KR20090004910A/ko not_active Ceased
- 2007-03-26 CN CNA2007800120092A patent/CN101415535A/zh active Pending
- 2007-03-26 EP EP07754062A patent/EP2007566A4/en not_active Withdrawn
- 2007-03-26 WO PCT/US2007/007487 patent/WO2007126767A2/en not_active Ceased
- 2007-03-29 TW TW96111034A patent/TWI352874B/zh not_active IP Right Cessation
-
2010
- 2010-11-05 JP JP2010248309A patent/JP2011077529A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090004910A (ko) | 2009-01-12 |
| WO2007126767A3 (en) | 2008-07-31 |
| TW200813619A (en) | 2008-03-16 |
| EP2007566A2 (en) | 2008-12-31 |
| JP2009532899A (ja) | 2009-09-10 |
| JP4667524B2 (ja) | 2011-04-13 |
| WO2007126767A2 (en) | 2007-11-08 |
| EP2007566A4 (en) | 2010-10-13 |
| JP2011077529A (ja) | 2011-04-14 |
| TWI352874B (en) | 2011-11-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20090422 |
|
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |