200813619 九、發明說明： t發明所屬技術領域;1 發明領域 迪Ji申請案之交叉參考 5 本申請案係對於2006年4月3曰提申標題為“藉由調變 晶圓形狀之壓印方法，，的美國臨時專利案號60/788,777作優 先權主張且身為2005年1月31日提申標題為“用於奈米製造 之夾持系統”的美國專利申請案號11/〇47,428之一部分接續 案，该案係為2005年1月31日提申標題為“用以將一基材扣 10持至一晶圓夾盤之方法，，的美國專利申請案號11/〇47,499之 为案專利申請案及2005年4月18日提申標題為“自配置於 基材上的一經固體化層分離一模具之方法，，的美國專利 申请案號11/1〇8,208之-分案專利申請案，其皆合併於本文 中以供參考。 美國政府在本發明中具有一付費授權及有限環境中要 求專利所有人在國豕標準機構（NIST)ATp裁定之 7隱刪刪2的條件所提供之合理條件下授卵人之權 利0 20 【夫Γ 發明背景 奈米製造係包含譬如具有數奈米或更小級數的特性之 很小結構之製造。-其中奈米製造發揮可觀影響之領域係 在於積體電路的處理。隨著半導體處理業持續致力更大的 5 200813619 生產良率同時增加-基材上所形成之每單位面積的電路， 奈米製造變得益加重要。奈米製造提供較大的製程控制同 時可容許進-步降低所形成結構之最小特性維度。已經採 用奈米製造之其他發展領域係包括生物科技、光學科技、 5 機械系統及類似物。 -種不德奈米製造技術常稱為壓印微影術 。示範性 壓印微影術製輯述於許多公開案巾，諸如標題為“用以將 特性配置A |材上以複製具有最小維度變異性的特性之 方法及杈具之以美國專利申請案號丨〇/264,96〇提申的美國 H)專利申請案公告2G__76;以標題為“形[層於二基 材上以便利於度量標準的製造之方法，，之美國專利申請案 號10/264,926提申的美國專利申請案公告2〇_〇65252 ;及 標題為“用於壓印微影術製程之功能性圖案化材料，，的美國 專利案號6,936,194，其皆讓渡予本發明受讓人。 15 上述美國專利申請案公告及美國專利案各者所揭露之 壓印微影術技術係包括將一浮雕圖案形成於一可聚合層中 及將一對應於該浮雕圖案之圖案轉移至一下方基材内。基 材可定位在一階台上以獲得一所想要位置以便利其圖案 化。因此，採用-與基材分開之模具而在模具與基材之間 20出現有一可成形液體。該液體係固體化以形成一其中記錄 有一圖案之圖案狀層，其中該圖案係符合接觸於液體之模 具表面的一形狀。然後模具自圖案狀層分離以使模具及基 材分開。基材及圖案狀層隨後受到將一對應於圖案狀層中 的圖案之浮雕圖案轉移至基材内之製程。 6 200813619 i:發明内容；j 依據本發明之一實施例，係特地 訂❿杈出一種用以固持_ 基材之失持系統，該系統包含：—夹盤體部，盆呈有第— 及第二相對側，該第-側係包括配置於列與射之流體室 5 I陣列，該等流體室純含用以界定第—及第二分開的 : 找區之第"及第二分開的凹部，其中該第-支撐區係環 、繞該第二支《及轉第—及第二轉，而該第二支撐區 _該第二凹部’其中該基材休止抵住該等第—及第二支 ㈣4巾料1部及與其疊置之職材的-部分係界 10定-第-室而該第二凹部及與其疊置之該基材的一部分界 疋-第二室’其中該等第一室的各行及該等第二室的各列 係與-不同流體供源呈流體導通以控制流體室的該陣列中 之一流體流。 依據本發明之一實施例，係特地提出一種用以固持一 15基材之夾持系統，該系統包含··一夾盤體部，其具有第一 及第二相對側，該第一側係包括一流體室，該流體室包含 用以界定第一及第二分開的支撐區之第一及第二分開的凹 部’其中該第一支撐區係環繞該第二支撐區及該等第一及 第二凹部，而該第二支撐區環繞該第二凹部，其中該基材 20休止抵住該等第一及第二支撐區，其中該第一凹部及與其 璺置之該基材的一部分係界定一第一室而該第二凹部及與 其疊置之該基材的一部分界定一第二室；及一壓力控制系 統，其與該等第一及第二室呈流體導通以控制該等第一及 第二室内之一壓力使得該等第一及第二室的一者中具有一 200813619 正壓力且該等第一及第二室的其餘室中具有一負壓力，其 中為了該等第一及第二室的一者内之一給定正壓力及該等 第一及第二室的其餘室内之一負壓力，該等第一及第二凹 部之間的一面積之一比值係使得該流體室將一負力施加至 5與該流體室疊置之該基材的一部分上。 依據本發明之一實施例，係特地提出一種用以固持一 基材之夾持系統，該系統包含：一夾盤體部，其具有第一 及第二相對側，該第一側係包括配置於列與行中之流體室 的一陣列，該流體室各者包含用以界定第一及第二分開的 10支撐區之第一及第二分開的凹部，其中該第一支撐區係環 繞该第二支撐區及該等第一及第二凹部，而該第二支撐區 %繞该第二凹部，其中該基材休止抵住該等第一及第二支 撐區，其中該第一凹部及與其疊置之該基材的一部分係界 定一第一室而該第二凹部及與其疊置之該基材的一部分界 15定一第二室；及一壓力控制系統，其具有複數個流體供源， 其中該等第一室的各行及該等第二室的各列係與該複數個 流體供源之-不同流體供源呈流體導通，該壓力控制系統 係控制该等第一及第二室内之一壓力使得該等第一及第二 至的-者中具有一正壓力且該等第一及第二室的其餘室中 〇八有負壓力，其中為了該等第一及第二室的一者内之一 給定正壓力及該等第一及第二室的其餘室内之一負壓力， 孩等第及第一凹部之間的一面積之一比值係使得該流體 室將一負力施加至與該流體室疊置之該基材的一部分上。 圖式簡單說明 8 200813619 第1圖為一具有與一基材分開的一模具之微影系統的 簡化側視圖，該基材位於一基材夾盤上； 弟2圖為顯示位於第1圖所示基材的一區上之壓印材料 滴粒的一陣列之俯視圖； 5 第3圖為第1圖所示基材之簡化側視圖，其具有一位於 其上之圖案狀層； 第4圖為第1圖所示的基材夾盤之側視圖； 弟5圖為苐1圖所示的基材炎盤之俯視圖，其顯示與基 材夾盤的複數個流體室呈流體導通之泵系統的複數個行； 10 第6圖為第1圖所示的基材夾盤之俯視圖，其顯示與基 材的複數個流體室呈流體導通之泵系統的複數個列； 第7圖為兩者皆顯示於第1圖中的基材及基材夾盤之一 部分的分解圖； 第8圖為顯示一用以圖案化第1圖所示基材的一區之方 15 法之流程圖； 第9圖為第1圖所示基材及模具之侧視圖，其中基材形 狀被更改； 第10圖為第9圖所示基材及模具之側視圖，模具係接觸 於第2圖的壓印材料滴粒之一部分； 20 第11至13圖為顯示第2圖所示滴粒的壓縮之俯視圖，其 採用第9圖所示基材的經更改形狀； 第Μ圖為第1〇圖所示基材及模具之侧視圖，基材被定 位於基材失盤上； 第Β圖為顯示第2圖中滴粒的壓縮之俯視圖，其在一進 9 200813619 乂實把例中採用第1Q圖所示基材之經更改形狀；及 第16圖為第1圖所示的基材及模具之侧視圖，模具自基 材部分地分離。 C實施方式】 5較佳實施例之詳細說明 參照第1圖，顯示一用以形成一浮雕圖案於一基材12上 之系統10。基材12可耦合至一基材夾盤14，如下文進一步 描述。基材12及基材夾盤14可被支撐於一階台16上。並且， 基材12、及基材夾盤14可定位在一基底（未圖示）上。階台16 10 可提供沿X及y轴之動作。 與基材12分開者係為一具有自其延伸前往基材12的一 台面20之模板18且其上具有一圖案化表面22 。並且，台面 20可稱為模具20。模具2〇亦可稱為奈米壓印模具2〇。一進 一步貫施例中，模板18可實質地不含模具2〇。模板18及/或 15模具20可自包括但不限於熔合矽土、石英、矽、有機聚合 物、矽氧烷聚合物、硼矽酸鹽玻璃、氟碳聚合物、金屬、 及硬化藍寶石之此等材料形成。如圖所示，圖案化表面22 係包含由複數個分開的凹部24及突部26所界定之特性。然 而，一進一步實施例中，圖案化表面22可實質為平坦及/或 20平面性。圖案化表面22可界定一原始圖案，其形成一將被 形成於基材12上之圖案的基礎。模板18可耦合至一模板夾 盤28,模板夾盤28係為任何夾盤包括但不限於真空、銷型、 溝槽型、或電磁性，如標題為“用於壓印微影術製程之高精 密定向對準及間隙控制，，之美國專利案號6,873,〇87所描 200813619 述，該案合併於本文中以供參考。並且，模板夾盤28可搞 合至一壓印頭30以便利模板18及因此包括模具20之運動。 系統10進一步包含一流體配送系統32。流體配送系統 32可與基材12呈流體導通藉以將聚合材料34沉積於其上。 5系統10可包含任何數量的流體配送器，且流體配送系統32 中可包含複數個配送單元。聚合材料34可利用任何已知技 術被定位在基材12上，譬如，滴落配送、旋塗、沾塗、化 學氣相沉積(CVD)、物理氣相沉積(PVD)、薄膜沉積、厚膜 沉積、及類似方式。如第2圖所示，聚合材料34可以複數個 10 分開的滴粒36沉積在基材12上，而界定一基質陣列38。一 範例中，各滴粒36可具有近似1至1〇皮升的一單位容積。基 貝陣列38的滴粒36可配置於五行C1-C5及五列q-r〗中。然而， 滴粒36可配置於基材12上之任何二維配置中。一般而言， 在模具20與基材12之間界定所想要的容積之前將聚合材料 15 34配置於基材12上。然而，聚合材料34可在已經獲得所想 要容積之後充填該容積。 參照第1至3圖，系統10進一步包含沿著一路徑44耦合 至直接能量42之一能量42供源40。壓印頭3〇及階台16係構 形為可分別將模具20及基材12配置成疊置且配置於路徑44 20中。壓印頭30、階台16、或兩者係改變模具2〇與基材12之 間的一距離以界定其間被聚合材料34充填之一所想要容 積。更確切言之，滴粒36可進入且充填凹部24。滴粒贼 填圖案化表面22界定之圖案所需要的時間可被定義為模具 2〇的“充填時間，，。以聚合材料34充填所想要的容積之後， 11 200813619 供源40產生譬如寬頻紫外輻射等能量42，其造成聚合材料 34符合基材12的一表面46及圖案化表面22之形狀而產生固 體化及/或交聯，而界定基材12上之一圖案狀層48。圖案狀 層48可包含一殘留層50及複數個顯示為突部52及凹部54之 5特性。系統10可被一與階台16、壓印頭30、流體配送系統 32、及供源40呈資料導通之處理器56所調節，而以儲存在 記憶體58中的一電腦可讀取程式操作。 參照第1及4至6圖，如上述，系統10包含基材夾盤14。 基材夾盤14適可採用真空技術來扣持基材12。基材夾盤14 10係包含一具有第一 62及第二64相對側之夾盤體部60。一 側、或邊緣表面66係延伸於第一62及第二64相對側之間。 第一側62包含複數個流體室68。如圖所示，基材夾盤14包 S流體至68a_68u，然而，一進一步實施例中，基材夾盤14 可包含任何數量的流體室。如圖所示，流體室68心6811可被 15定位為配置在五行aras及五列brb5中之一陣列。然而，流 體室68可配置在夾盤體部60中的任何二維配置中。為了圖 示簡單起見，第5及6圖中分別分離地顯示行心_&5及列brb2。 參照第4至6圖，各流體室68包含一第一凹部70及一與 第一凹部70分開之第二凹部72,而界定一支撐區74及一第 20二支撐區76。第二支撐區％環繞第二凹部72。第一支撐區 74環繞第二支撐區76及第一及第二凹部7〇及72。複數個通 路78及80形成於夾盤體部60中以將各流體室68分別放置成 與一泵系統82及84呈流體導通。更確切言之，流體室68的 各第一凹部70可經由通路78與泵系統82呈流體導通，且各 12 200813619 第二凹部72可經由通路80與泵系統84呈流體導通。各泵系 統82及84中可包括一或多個栗。 參照第4及5圖，流體室68的一行中之流體室68的 各第一凹部70係可經由通路78與泵系統82呈流體導通。更 5確切言之，行ai中之流體室68d、68i、及68η的第一凹部70 可經由一通路78a與一泵系統82a呈流體導通；行a2中之流體 室68a、68e、68j、68〇、及68s的第一凹部70可經由一通路 78b與一泵系統82b呈流體導通；行七中之流體室68b、68f、 68k、68p、及68t的第一凹部70可經由一通路78c與一泵系統 10 82c呈流體導通；行如中之流體室68c、68g、681、6叫、及 68u的第一凹部70可經由一通路78d與一泵系統82d呈流體 導通，行中之流體室68h、68m、及68r的第一凹部70可經 由一通路78e與一泵系統82e呈流體導通。 參照第4及6圖，尚且，一列h-bs中之流體室68的各第 15二凹部72係可經由通路8〇與泵系統84呈流體導通。更確切 言之’列卜中之流體室68a、68b、及68c的第二凹部72可經 由一通路80a與一泵系統84a呈流體導通；列匕2中之流體室 68d、68e、68f、68g、及68h的第二凹部72可經由一通路80b 與一泵系統84b呈流體導通；列b3中之流體室晰、68j、68k、 20 681、及68m的第二凹部72可經由一通路8〇c與一泵系統84c 呈流體導通；列趴中之流體室68n、68〇、68p、68q、及68r 的第二凹部72可經由一通路8〇d與一泵系統84d呈流體導 通’且列h中之流體室68s、68t、及68u的第二凹部72可經 由一通路80e與一泵系統84e呈流體導通。 13 200813619 參照第1及4至6圖，當基材12被定位在基材夾盤14上 時，基材12休止抵住夾盤體部6〇的第一表面62，而覆蓋住 流體室68，更確切來説覆蓋住各流體室68的第一及第二凹 邛70及72。更讀切言之，流體室μ的各第一凹部％及與其 5 4:置之基材12的-部分係界定一第—室86 ;流體室68的各 第二凹部72及與其疊置之基材12的一部分係界定一第二室 88。尚且，泵系統82係操作以控制第一室86内之一壓力/真 空而泵系統84係操作以控制第二室88内之一壓力/真空。可 建立第一及第二室86及88内的壓力/真空以維持基材12的 10位置來避免或降低基材12自基材夾盤14之分離同時更改基 材12的形狀，如下文進一步描述。泵系統”及料可與處理 器56呈資料導通，而以記憶體58上所儲存之一電腦可讀取 程式操作來控制泵系統82及84。 參照第4及5圖，更確切言之，泵系統仏係操作以控制 15行〜中之流體室68d、68i、及68η的第一室86内之一壓力/真 空；泵系統88b係操作以控制行心中之流體室68a、68e、68j、 68〇、及68s的第一室86内之一壓力/真空；栗系統版係操作 以控制行a3中之流體室68b、68f、68k、68p、及⑽的第一 至86内之-壓力/真空；泵系統88d係操作以控制行如中之流 20體室68C、68§、68卜68q、及6811的第一室86内之一壓力/ 真空；且泵系統88e係操作以控制行心中之流體室_、 68m、及68r的第一室86内之一壓力/真空。 參照第4及6圖，尚且，泵系統84a係操作以控制歹以中 之流體室68a、68b、及68c的第二室88内之一壓力/真空；泵 14 200813619 系、、先84b係操作以控制列^中之流體室㈣、咖、撕、响、 及68h的第一至88内之一壓力/真空；泵系統84c係操作以控 制列h中之流體室68i、68j·、68k、砧卜及68m的第二室㈣ 内之一壓力/真空；泵系統84d係操作以控制列、中之流體室 5 68η、68〇、68p、68q、及68r的第二室88内之一壓力/真空； 且泵糸統84e係操作以控制列b5中之流體室68s、68t、及68u 的第二室88内之一壓力/真玄。 參照第4至7圖，各流體爹68可具有1)與其相關聯之一 夾持狀態或2)與其相關聯之〆井夾持/弓形，依據所想要應 10用而定，如下文進一步描述。更確切言之，如上述，第一 及第二室86及88係分別與第〆及第二凹部70及72相關聯。 因此，一被施加至基材丨2〆鄯分上之力可能係特別依據與 基材12部分疊置之第一及第 >凹部7〇及72的面積之一量值 以及疊置於基材12部分之第z及第二室86及88内的壓力/ 15真空之一量值而定。更確切言之’對於疊置於一次組的流 體室68之基材12的一部分90，施加至部分90上之力係為一 施加至疊置於第一凹部70/第，室86之部分90的一次部分 92上之力F!及一施加至疊置於第二凹部72/第二室88之部分 90的一次部分94上之力f2的〆組合。如圖所示，力Fi&F2 2〇皆位於一遠離基材12之方向中。然而，力？1及匕可位於一 朝向基材12的方向中。並且，力Fi及F2可位於相反方向中。 因此，施加至次部分92上之力Fl可定義如下：200813619 IX. Description of the invention: Technical field of the invention; 1 Field of the invention Cross-reference of the application of the Ji application 5 This application is filed on April 3, 2006, entitled "Imprinting method by modulating the shape of the wafer" U.S. Patent Application Serial No. 60/788,777, the entire disclosure of which is incorporated herein by reference in its entirety, the entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire contents In a continuation of the case, the method is entitled "Description of a substrate for holding a substrate to a wafer chuck" on January 31, 2005, U.S. Patent Application Serial No. 11/47,499. The patent application and the April 18, 2005 titled "A method for separating a mold from a solidified layer disposed on a substrate," US Patent Application Serial No. 11/1, No. 8,208 The application is incorporated herein by reference. The U.S. Government has a fee authorization in the present invention and a condition in the limited environment that requires the patent owner to arbitrarily delete the 2 in the National Institute of Standards (NIST) ATp. The right to provide the eggbeater under reasonable conditions 0 20 [ BACKGROUND OF THE INVENTION Nanofabrication systems include the fabrication of very small structures having characteristics of a few nanometers or less. - The field in which nanofabrication exerts considerable influence lies in the processing of integrated circuits. Continued efforts to be even greater 5 200813619 Production yields simultaneously increase the circuit per unit area formed on the substrate, nano-manufacturing becomes more important. Nano-manufacturing provides greater process control while allowing further step-down The smallest characteristic dimension of the resulting structure. Other areas of development that have been manufactured using nanotechnology include biotechnology, optical technology, 5 mechanical systems, and the like. - The technology of non-Denano manufacturing is often referred to as imprint lithography. The embossing lithography is described in a number of public drapes, such as the U.S. Patent Application Serial No. entitled "Methods for Configuring Properties on a Material to Reproduce Characteristics with Minimal Dimensional Variability" 264 / 264, 96 〇 的 US H) Patent Application Announcement 2G__76; with the title of "formation [layer on the two substrates to facilitate the manufacture of metrics, the US patent U.S. Patent Application Serial No. 5,264,926, filed on Jan. No. No. No. No. No. No. No. No. No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No 652 652 652 652 652 652 652 652 652 652 652 652 652 652 652 652 652 652 652 652 652 To the assignee of the present invention. The embossing lithography technique disclosed in the above-mentioned U.S. Patent Application Publication and the U.S. Patent Application, the disclosure of which is incorporated herein by reference in its entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire portion . The substrate can be positioned on a first stage to obtain a desired position to facilitate its patterning. Thus, a formable liquid is present between the mold and the substrate 20 using a mold separate from the substrate. The liquid system is solidified to form a patterned layer in which a pattern is recorded, wherein the pattern conforms to a shape of the surface of the mold that is in contact with the liquid. The mold is then separated from the patterned layer to separate the mold from the substrate. The substrate and patterned layer are then subjected to a process for transferring a relief pattern corresponding to the pattern in the patterned layer into the substrate. 6 200813619 i: SUMMARY OF THE INVENTION In accordance with an embodiment of the present invention, a detent system for holding a substrate is specifically provided, the system comprising: a chuck body having a first and a a second opposite side, the first side system comprising an array of fluid chambers 5I disposed in the column and the emitters, the fluid chambers being purely defined to define the first and second separations: the first "the second" and the second separation a recess, wherein the first support region is looped around the second branch and the second and second turns, and the second support region is the second recess, wherein the substrate rests against the first And a second (four) 4 towel material 1 and a portion of the overlapped material thereof are partially bounded to the first chamber and the second recess portion and a portion of the substrate overlapped therewith - the second chamber The rows of the first chambers and the columns of the second chambers are in fluid communication with a different fluid supply to control one of the fluid streams in the array of fluid chambers. In accordance with an embodiment of the present invention, a clamping system for holding a 15 substrate is provided, the system comprising a chuck body having first and second opposing sides, the first side Included as a fluid chamber, the fluid chamber includes first and second separate recesses for defining first and second separate support regions, wherein the first support region surrounds the second support region and the first and a second recess, wherein the second support region surrounds the second recess, wherein the substrate 20 rests against the first and second support regions, wherein the first recess and a portion of the substrate disposed therewith are Defining a first chamber and the second recess and a portion of the substrate superposed thereon define a second chamber; and a pressure control system fluidly conducting with the first and second chambers to control the first chamber One of the pressures in the first and second chambers has a positive pressure of 200813619 in one of the first and second chambers and a negative pressure in the remaining chambers of the first and second chambers, wherein for the first And one of the second chambers gives a given positive pressure and the same a negative pressure in one of the remaining chambers of the second chamber and a ratio of an area between the first and second recesses such that the fluid chamber applies a negative force to the base of the fluid chamber Part of the material. In accordance with an embodiment of the present invention, a clamping system for holding a substrate is specifically provided, the system comprising: a chuck body having first and second opposing sides, the first side comprising a configuration An array of fluid chambers in the row and row, each of the fluid chambers including first and second separate recesses defining first and second spaced apart 10 support regions, wherein the first support region surrounds the a second support region and the first and second recesses, wherein the second support region is around the second recess, wherein the substrate rests against the first and second support regions, wherein the first recess and a portion of the substrate superposed thereon defines a first chamber and the second recess and a portion of the substrate 15 overlapping the substrate define a second chamber; and a pressure control system having a plurality of fluids for a source, wherein each row of the first chambers and each of the second chambers are in fluid communication with a different fluid supply source of the plurality of fluid sources, the pressure control system controlling the first and second One of the pressures in the room makes these first and second to Having a positive pressure and having a negative pressure in the remaining chambers of the first and second chambers, wherein a positive pressure is given for one of the first and second chambers and the first and second The negative pressure of one of the remaining chambers of the chamber, the ratio of one of the areas between the child and the first recess, causes the fluid chamber to apply a negative force to a portion of the substrate that overlaps the fluid chamber. BRIEF DESCRIPTION OF THE DRAWINGS 8 200813619 Figure 1 is a simplified side view of a lithography system having a mold separate from a substrate, the substrate being placed on a substrate chuck; Figure 2 is shown in Figure 1 A top view of an array of embossed material droplets on a region of the substrate; 5 Figure 3 is a simplified side view of the substrate of Figure 1, having a patterned layer thereon; Figure 4 a side view of the substrate chuck shown in Figure 1; Figure 5 is a top view of the substrate disc shown in Figure 1, showing the pump system in fluid communication with the plurality of fluid chambers of the substrate chuck Figure 6 is a top plan view of the substrate chuck shown in Figure 1 showing a plurality of columns of pump systems in fluid communication with a plurality of fluid chambers of the substrate; Figure 7 is for both An exploded view of a portion of the substrate and the substrate chuck, both of which are shown in FIG. 1; and FIG. 8 is a flow chart showing a method for patterning a region of the substrate shown in FIG. 1; Figure 9 is a side view of the substrate and mold shown in Figure 1, wherein the shape of the substrate is modified; Figure 10 is the substrate and mold shown in Figure 9. In a side view, the mold is in contact with one of the embossing material droplets of FIG. 2; 20 Figures 11 to 13 are top views showing the compression of the granules shown in Fig. 2, using the substrate shown in Fig. 9. The shape is changed; the second drawing is a side view of the substrate and the mold shown in Fig. 1, the substrate is positioned on the substrate loss plate; the second drawing is a top view showing the compression of the droplets in Fig. 2, In the example of the invention, the modified shape of the substrate shown in Fig. 1Q is used in the example; and Fig. 16 is a side view of the substrate and the mold shown in Fig. 1, the mold is partially separated from the substrate. C. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to Figure 1, a system 10 for forming a relief pattern on a substrate 12 is shown. Substrate 12 can be coupled to a substrate chuck 14, as further described below. Substrate 12 and substrate chuck 14 can be supported on first stage stage 16. Also, the substrate 12 and the substrate chuck 14 can be positioned on a substrate (not shown). Stage 16 10 provides motion along the X and y axes. Separate from the substrate 12 is a template 18 having a face 20 extending therefrom to the substrate 12 and having a patterned surface 22 thereon. Also, the table top 20 may be referred to as a mold 20. The mold 2〇 can also be referred to as a nanoimprint mold 2〇. In a further embodiment, the template 18 can be substantially free of the mold 2〇. The template 18 and/or 15 mold 20 may include, but is not limited to, fused alumina, quartz, ruthenium, organic polymer, siloxane polymer, borosilicate glass, fluorocarbon polymer, metal, and hardened sapphire. And other materials are formed. As shown, the patterned surface 22 includes properties defined by a plurality of separate recesses 24 and protrusions 26. However, in a further embodiment, the patterned surface 22 can be substantially flat and/or 20 planar. The patterned surface 22 can define an original pattern that forms the basis of a pattern to be formed on the substrate 12. The template 18 can be coupled to a template chuck 28, which is any chuck including, but not limited to, vacuum, pin, groove, or electromagnetic, as described in the heading "Using Imprinting Microfilm Processes" High-precision directional alignment and gap control are described in U.S. Patent No. 6,873, the entire disclosure of which is incorporated herein by reference. Facilitating the template 18 and thus the movement of the mold 20. The system 10 further includes a fluid dispensing system 32. The fluid dispensing system 32 can be in fluid communication with the substrate 12 to deposit polymeric material 34 thereon. 5 System 10 can include any number The fluid dispenser can include a plurality of dispensing units in the fluid dispensing system 32. The polymeric material 34 can be positioned on the substrate 12 using any known technique, such as, for example, drip dispensing, spin coating, dip coating, chemical vapor phase. Deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and the like. As shown in FIG. 2, the polymeric material 34 may be deposited on the substrate 12 by a plurality of 10 separate drops 36. Defining a matrix array 38. In one example, each of the drops 36 may have a unit volume of approximately 1 to 1 〇 liter. The granules 36 of the kebab array 38 may be disposed in five rows of C1-C5 and five columns of qr. 36 can be disposed in any two-dimensional configuration on substrate 12. In general, polymeric material 154 is disposed on substrate 12 prior to defining a desired volume between mold 20 and substrate 12. However, polymerization The material 34 can be filled with the volume after the desired volume has been obtained. Referring to Figures 1 through 3, the system 10 further includes an energy source 42 coupled to one of the direct energy 42 along a path 44. The imprint head 3 The stage 16 is configured to dispose the mold 20 and the substrate 12 in a stacked manner and disposed in the path 44 20. The stamping head 30, the stage 16, or both change the mold 2 and the substrate 12. A distance therebetween defines the desired volume of one of the filled materials 34 to be filled. More specifically, the droplets 36 can enter and fill the recess 24. The time required for the thief to fill the pattern defined by the patterned surface 22 can be It is defined as the "filling time," of the mold 2〇. After the desired volume is filled with the polymeric material 34, the source 40 produces an energy 42 such as broadband ultraviolet radiation that causes the polymeric material 34 to conform to the shape of a surface 46 of the substrate 12 and the patterned surface 22 to solidify. And/or cross-linking, defining a patterned layer 48 on the substrate 12. The patterned layer 48 can include a residual layer 50 and a plurality of features shown as protrusions 52 and recesses 54. The system 10 can be adjusted by a processor 56 that is in communication with the stage 16, the imprint head 30, the fluid dispensing system 32, and the source 40, and is operated by a computer readable program stored in the memory 58. . Referring to Figures 1 and 4 through 6, as described above, system 10 includes a substrate chuck 14. The substrate chuck 14 is adapted to hold the substrate 12 by vacuum techniques. The substrate chuck 14 10 includes a chuck body 60 having opposite sides of the first 62 and second 64. One side, or edge surface 66, extends between the opposite sides of the first 62 and second 64. The first side 62 includes a plurality of fluid chambers 68. As shown, the substrate chuck 14 encloses S fluid to 68a-68u, however, in a further embodiment, the substrate chuck 14 can include any number of fluid chambers. As shown, fluid chamber 68 heart 6811 can be positioned 15 to be arranged in one of five rows of aras and five columns of brb5. However, the fluid chamber 68 can be disposed in any two-dimensional configuration in the chuck body 60. For the sake of simplicity of the drawing, the centroids _&5 and the column brb2 are separately shown in Figs. 5 and 6. Referring to Figures 4 through 6, each fluid chamber 68 includes a first recess 70 and a second recess 72 spaced apart from the first recess 70 to define a support region 74 and a 20th support region 76. The second support zone % surrounds the second recess 72. The first support region 74 surrounds the second support region 76 and the first and second recesses 7 and 72. A plurality of passages 78 and 80 are formed in the chuck body 60 to place the fluid chambers 68 in fluid communication with a pump system 82 and 84, respectively. More specifically, each of the first recesses 70 of the fluid chamber 68 can be in fluid communication with the pump system 82 via passages 78, and each of the 12 200813619 second recesses 72 can be in fluid communication with the pump system 84 via passages 80. One or more pumps may be included in each of the pump systems 82 and 84. Referring to Figures 4 and 5, each of the first recesses 70 of the fluid chamber 68 in one row of the fluid chamber 68 can be in fluid communication with the pump system 82 via passage 78. More specifically, the first recess 70 of the fluid chambers 68d, 68i, and 68n in row ai can be in fluid communication with a pump system 82a via a passage 78a; fluid chambers 68a, 68e, 68j, 68 in row a2. The first recess 70 of the 〇 and 68s can be in fluid communication with a pump system 82b via a passage 78b; the first recess 70 of the fluid chambers 68b, 68f, 68k, 68p, and 68t in row seven can be coupled via a passage 78c A pump system 10 82c is fluidly conducting; the first recess 70 of the fluid chambers 68c, 68g, 681, 6 and 68u of the row can be in fluid communication with a pump system 82d via a passage 78d, the fluid chamber in the row The first recess 70 of 68h, 68m, and 68r can be in fluid communication with a pump system 82e via a passage 78e. Referring to Figures 4 and 6, further, each of the 15th recess 72 of the fluid chamber 68 in a row of h-bs can be in fluid communication with the pump system 84 via the passage 8〇. More specifically, the second recess 72 of the fluid chambers 68a, 68b, and 68c in the column can be in fluid communication with a pump system 84a via a passage 80a; the fluid chambers 68d, 68e, 68f, 68g in the train 2 And the second recess 72 of the 68h can be in fluid communication with a pump system 84b via a passage 80b; the second recess 72 of the fluid chambers, 68j, 68k, 20681, and 68m in the column b3 can be connected via a passage 8 c is in fluid communication with a pump system 84c; the second recess 72 of the fluid chambers 68n, 68〇, 68p, 68q, and 68r in the train can be in fluid communication with a pump system 84d via a passage 8〇d The second recess 72 of the fluid chambers 68s, 68t, and 68u in h can be in fluid communication with a pump system 84e via a passage 80e. 13 200813619 Referring to Figures 1 and 4 to 6, when the substrate 12 is positioned on the substrate chuck 14, the substrate 12 rests against the first surface 62 of the chuck body 6〇, covering the fluid chamber 68. More specifically, the first and second recesses 70 and 72 of each fluid chamber 68 are covered. More specifically, the first recess % of the fluid chamber μ and the portion of the substrate 12 disposed therewith define a first chamber 86; each second recess 72 of the fluid chamber 68 and the superposed portion thereof A portion of the substrate 12 defines a second chamber 88. Still further, pump system 82 operates to control one of the pressures/vacuum in first chamber 86 and pump system 84 operates to control one of the pressures/vacuum in second chamber 88. Pressure/vacuum within the first and second chambers 86 and 88 can be established to maintain the 10 position of the substrate 12 to avoid or reduce the separation of the substrate 12 from the substrate chuck 14 while modifying the shape of the substrate 12, as further described below description. The pump system and the material may be in communication with the processor 56 and control the pump systems 82 and 84 by a computer readable program stored on the memory 58. Referring to Figures 4 and 5, more specifically, The pump system is operative to control a pressure/vacuum in the first chamber 86 of the fluid chambers 68d, 68i, and 68n of the 15 rows to 15; the pump system 88b is operative to control the fluid chambers 68a, 68e, 68j in the center of the core, a pressure/vacuum in the first chamber 86 of 68 〇 and 68 s; the system of the pump system is operated to control the pressures in the first to 86 of the fluid chambers 68b, 68f, 68k, 68p, and (10) in row a3. Vacuum; pump system 88d is operated to control a pressure/vacuum in the first chamber 86 of the chambers 68C, 68 §, 68b 68q, and 6811 of the flow 20; and the pump system 88e operates to control the center of the line One of the pressures/vacuum in the first chamber 86 of the fluid chambers _, 68m, and 68r. Referring to Figures 4 and 6, still, the pump system 84a is operative to control the fluid chambers 68a, 68b, and 68c a pressure/vacuum in the second chamber 88; the pump 14 200813619, the first 84b operation to control the fluid chamber (four), coffee, tear, Loud, and one of the first to 88 pressure/vacuum of 68h; the pump system 84c is operated to control one of the fluid chambers 68i, 68j, 68k in the column h, the anvil and the second chamber (4) of 68m/ Vacuum; pump system 84d is operative to control one of the pressures/vacuations in the second chamber 88 of the fluid chambers 5 68n, 68〇, 68p, 68q, and 68r in the column; and the pump system 84e operates to control column b5 One of the pressures in the second chamber 88 of the fluid chambers 68s, 68t, and 68u. Referring to Figures 4 through 7, each fluid port 68 can have 1) a clamping state associated with it or 2) The associated well clamping/bow shape is determined according to what is desired, as further described below. More specifically, as described above, the first and second chambers 86 and 88 are respectively associated with the second and second The recesses 70 and 72 are associated with each other. Therefore, a force applied to the substrate 2 may be one of the areas of the first and third recesses 7 and 72 which are partially overlapped with the substrate 12, in particular. The magnitude and the amount of pressure/15 vacuum placed in the zth and second chambers 86 and 88 of the portion of the substrate 12 are more precise. A portion 90 of the substrate 12 of the fluid chamber 68, the force applied to the portion 90 is a force F! and a force applied to the primary portion 92 of the portion 90 of the first recess 70/the chamber 86. A combination of forces applied to the primary portion 94 of the portion 90 of the second recess 72 / the second chamber 88. As shown, the force Fi & F2 2 is located in a direction away from the substrate 12. However, the forces 1 and 匕 may be located in a direction toward the substrate 12. Also, the forces Fi and F2 can be in opposite directions. Therefore, the force F1 applied to the secondary portion 92 can be defined as follows:
Fi = A! X Pl (1) 其中A!為第一凹部70的面積而ρι為與第一室86相關聯 15 200813619 之壓力/真空；且施加至次部分94上之力F2可定義如下： F2 = A2 X P2 (2) 其中A2為第二凹部72的面積而P2為與第二室μ相關聯 之壓力/真空。與流體室68相關聯之力F1&F2可共同稱為基 5 材夾盤14施加至基材12上之爽持力Fc。 參照第1及4至6圖，因此，可能想要具有特別依據滴粒 36、基材12、及模具20之間的空間關係而與其有不同狀態 之不同流體室68。第一及第二室86及88的狀態係特別依據 力Fi&F2的方向而定。更確切言之，對於處於一朝向基材 10 12的方向中之力F〗，第一室86處於壓力狀態；對於處於一 遠離基材12的方向中之力F!，第一室86處於真空狀態；對 於處於一朝向基材12的方向中之力F2，第二室88處於壓力 狀態；而對於處於一遠離基材12的方向中之力f2，第二室 88處於真空狀態。 15 因此，由於第一及第二室86及88各具有與其相關聯的 兩不同狀態之可能性的緣故，流體室68可具有與其相關聯 的四種組合之一者。下表1顯示第一及第二室86及88内之真 空/壓力的四種組合及所產生的流體室68。 20 表1 組合 第一室86 第二室88 流體室68的狀態 1 真空 真空 夾持 2 真空 壓力 夾持 3 壓力 真空 夾持 4 壓力 壓力 非夾持/弓形 第一及第四組合中，第一及第二室86及88具有與其相 16 200813619 關聯之相同狀態。更確切言之，第一組合中，第一室86係 處於真空狀態而第二室88處於真空狀態，且因此，流體室 68具有與其相關連之一夾持狀態。並且，第四組合中，第 -室86處於壓力狀態而第二室88處於壓力狀態，且因此， 5流體室68具有與其相關聯之一非夹持/弓形狀態。 第一及第二組合中，第一及第二室86及88具有與其相 關聯之不同狀態。然而，流體室68具有與其相關聯之一夾 持狀態。因此，第一及第二凹部7〇及72的面積aaa2之比 值係使得對於與第一及第二室86及88相關連之-給定壓力 W KP及-給定真空Kv而言，與第一及第三室狀及咖真空狀 悲相關聯之力fjf2之一力量值係大於與第一及第二室86 及88的壓力狀態相關聯之留存的力F1及込之一力量值。因 此，上述第二組合中，第一室86係處於真空狀態而第二室 88處於壓力狀態。 15 為了使流體室68處於真空狀態： I Fi I > I F2 I (3) 及因此，利用上述等式及: I AlXKv I > I Α2χΚρ I (4) 及因此第一及第二凹部70及72的面積Ai&A2之比值分 20別為： ai/A2> | Κρ/Κν I (5) 上述第三組合中，第一室86處於壓力狀態而第二室88 處於真空狀態。因此，為了使流體室68處於真空狀態： I | > | F! | (6) 17 200813619 及因此，利用上述等式（1)及(2): I A2xKv I > I A!xKp I (7) 及因此第一及第二凹部70及72的面積乂及八2之比值分 別為· 5 ai/A2< I Ky/Kp I (8) 因此，顯然為了當第一及第二室86及88處於不同狀態 時使流體室68具有與其相關聯之一真空狀態，第一及第二 凹部70及72的面積八!及八2可分別定義如下： I Kp/Kv I <A!/A2< I Kv/Kp I (9) 10 一範例中，KP可近似為40 kPa而Kv可近似為-80 kPa， 及因此八〗對八2之比值可定義如下： 〇.5<A!/A2<2 (1〇) 尚且’處於非夾持/弓形狀態之一流體室68内的一壓力 量值係可改變。更確切言之，以記憶體58中所儲存的一電 15腦可讀取程式操作之處理器56係由於與泵系統82及84電性 導通故可分別經由泵系統82及88來改變第一及第二室86及 88内之一壓力量值。 參照第1至3圖，如上述，模具20與基材12之間的一距 #受到改麦藉以在其間界定一被聚合材料Μ充填之所想要 20容積。尚且，固體化之後，聚合材料34係符合基材12的表 面46及圖案化表面22之形狀，而界定基材12上之圖案化層 48。因此，基質陣列38的滴粒36之間所界定之一容積妬中， 出現有氣體。氣體及/或氣體囊可為包括但不限於空氣、 氮、二氧化碳、及氦之此等氣體。基材12與模具2〇之間的 18 200813619 氣體可特別導因於複數個基材12及模具2〇。因此，可能邦、 要降低如上述之模具20的充填時間。充填時間特別依據基 材12與模具20之間及圖案化層48内的氣體及/或氣體囊自 基材12與模具20之間排空及/或溶解至聚合材料％中及/或 5擴散至聚合材料34内所需要之時間而定。因此，下文描述 一用以防止或盡量減少氣體困陷於模具2〇與基材12間之方 法及系統。 參如苐1及8圖，顯示一用以驅排基材12及模具之間 氣體之方法。更確切言之，在步驟100，如上述，聚合材料 10 34可藉由滴落配送、旋塗、沾塗、化學氣相沉積(CVD)、物 理氣相沉積(PVD)、薄膜沉積、厚膜沉積及類似方式被定位 在基材12上。一進一步實施例中，聚合材料34可被定位在 模具20上。 參知第5、6、8及9圖，在步驟1 〇2，可更改基材12的一 15形狀使得基材12的一中心次部分處之模具20與基材12間所 界定的一距離山小於基材12其餘部分處之模具2〇與基材12 之間所界定的一距離。一範例中，距離山小於具有屯，距離 4被界定於基材12的一邊緣處。一進一步實施例中，距離 山可被界定於基材12之任何所想要位置處。可藉由控制複 20數個流體室68的一壓力/真空來更改基材12的形狀。更確切 言之，與基材12的一部分98疊置之流體室68係處於一非夾 持/弓形狀悲以使基材12的部分98弓起朝向模具2〇及遠離 基材夾盤14。並且，與處於非夾持/弓形狀態之基材12的一 部分98疊置之流體室68呈現同時地，與基材12的一部分99 19 200813619 $置之其餘流體室68係處於一夾持狀態以將基材12扣持在 基材夾盤14上。 參照第7、10、及11圖，在步驟1〇4，如上文對於第斶 所述，第1圖所示的壓印頭30、階台16、或兩者係可改變距 5離山，如第9圖所示，使得模具2〇的一次部分接觸滴粒湖 一次部分。如圖所示，在模具20的其餘部分接觸滴粒36的 其餘滴粒之前，模具20的一中心次部分係接觸滴粒％的一 次部分。然而，一進一步實施例中，模具2〇的任何部分係 可在模具20的其餘部分之前接觸滴粒36。因此，如圖所示， 10杈具20係實質同時地接觸與行^相關聯之所有滴粒妬，如 第2圖所示。這造成滴粒36分散且產生聚合材料34的鄰接液 體片120。液體片120的邊緣122a及122b係分別界定可用來 將容積96中的氣體推往邊緣128a、128b、128c、及12“之 液體-氣體介面124a及124b。行Cl_C5中的滴粒36之容積96係 15界定可供氣體通過被推往邊緣128a、128b、128c、及i28d 之氣體通道。結果，液體-氣體介面124a及124b連同氣體通 道係防止或減少氣體困陷於液體片120中。 參照第4至6及8圖，在步驟106，可隨著距離山進一步 降低來進一步更改基材12的形狀，使得模具20與基材12間 20所界定的所想要容積可被聚合材料34充填，如上文參照 圖所述。更確切言之，基材12的形狀可經由流體室68連同 經由壓印頭30、階台16、或兩者的減小距離山而被更改。 更確切言之，如上述，與基材12的部分98疊置之流體室68 的第〆及第二室86及88内之壓力量值係可改變，如第9圖所 20 200813619 示。因此，隨著第9圖所示之距離山減小，與基材12的部分 98疊置之流體室68的第一及第二室86及88内之壓力量值可 減小，如第9圖所示。由於第9圖所示的減小距離山及第9圖 所示之基材12的部分98疊置之流體室68的第一及第二室86 5 及88中的上述壓力減小之緣故，如第2圖所示與行c2及c4中 的滴粒3 6相關聯之聚合材料3 4係分散以變成被包括在鄰接 流體片120中，如第12圖所示。第9圖所示的距離山可連同 與第9圖所示基材12的部分98疊置之流體室68的第一及第 二室86及88内之壓力量值降低而被進一步減小，使得模具 10 20隨後變成接觸於與行〇1及〇5相關聯之滴粒36故令與其相 關聯的聚合材料34分散以變成被包括在鄰接片120中，如第 13圖所示。一進一步實施例中，與基材12的部分98疊置之 流體室68的第一及第二室86及88内之壓力係可降低以使基 材12的部分98被定位在基材夾盤14上，如第14圖所示。另 15 一進一步實施例中，與基材12的部分98疊置之流體室68的 第一及第二室86及88中可在滴粒36分散之後具有一真空。 參照第8及13圖，可看出，介面124a及124b已經分別移 往邊緣128c及128a，故對於其餘容積％中的氣體具有一未 受阻路徑可供移打’如第u圖所示。這可容許第n圖所示 20的容積％中之氣體自楔具20與基材12之間相對於邊緣 128a、128b、128c、及128耕出。利用此方式，可防止或 盡S減少氣體及/或氣囊困陷於基材12與模具2〇之間及圖 案化層48内，如第3圖所示。 參照第1及8圖，在步鄉，如上文參照第1圖所述， 21 200813619 聚合材料34可隨後被固體化及/或交聯，而界定圖案狀層 48 ’如第3圖所示。隨後在步驟n〇，模具2〇可自圖案狀層 48分離。 參照第1、8及15圖，如上述，基材12的形狀可沿第一 5方向被更改。然而，一進一步實施例中，基材12的形狀可 在第一及第二方向同時被更改，其中第二方向正交於第一 方向延伸。更確切言之，基材12可被更改使得基材12的一 中心次部分接觸到模具2〇，且因此滴粒36的一中心次部分 在滴粒36的其餘滴粒接觸模具3〇之前即接觸到模具2〇，如 10上文參照第10圖所述。這造成滴粒36分散且產生聚合材料 34的鄰接液體片120,而界定可用來將容積96中的氣體徑向 往外推之液體-氣體介面124。一範例中，液體片120可具有 液體-氣體介面124的一圓形或類圓形擴張以將容積96中的 氣體徑向地往外推往邊緣128a、128b、128c、及128d。然 15 而’一進一步實施例中，基材12的形狀可在任何方向中更 改以產生便利將容積96中的氣體徑向往外推往邊緣128a、 128b、128c、及128d所想要之任何幾何形狀亦即球形、圓 柱形等的液體片120以防止或盡量減小氣體及/或氣體囊困 陷於基材12與模具120之間及圖案化層48内，如第3圖所 20 示。一進一步實施例中，第一及第二室86及88之一次組的 列及行中係可分別不生成壓力/真空。 參照第16圖，一進一步實施例中，基材夾盤14可進一 步用來便利模具20與位於基材12上的圖案狀層48之間的分 離。更確切言之，藉由將一分離力Fs施加至模板18及模具 22 200813619 20來達成模具20自圖案狀層48之分離。分離力Fs係具有足 以克服模具20與圖案狀層48之間黏著力及基材12對於應變 (變形）的阻力之量值。相信基材12—部分之變形係便利於模 /、20自圖案狀層48之分離。因此，可能想要盡量減低分離 5力匕的量值以達成模具20自圖案狀層48之分離。盡量減小 分離力F s量值係特別可便利於模具2 0與基材12之間的對 準’增大模板圖案化面積vs·總模板面積的一比值，及盡量 降低模板18、模具20、基材12、及圖案狀層48的結構性妥 協之機率。 10 因此’如上述’流體室68内之一壓力量值可改變。因 此，如上述，在模具2〇自圖案狀層48分離期間，與基材12 的一部分13疊置之流體室68可處於非夾持/弓形狀態。結 果，與基材12的部分13疊置之流體室68係可在實質與分離 力Fs方向相同之方向中如第7圖所示施加夾持力Fc、力匕及 15 F2。結果，使模具2〇自圖案狀層48分離所需要之分離力Fs 的里值可降低。更確切言之，建立了與基材12的部分13疊 置之夾持力Fc量值以便利基材12的部分13回應於分離力Fs 之應變（變形）。應注意與基材12的部分13疊置之夾持力Fc 量值係可具有使位於部分13外側之基材12部分在其受到分 20離力Fs時被扣持於基材夾盤14上之所想要的任何數值。 參照第1圖，另一進一步實施例中，上述經由基材夾盤 14使基材12彎折之方法可類似地施用至模板18/模具2〇。更 確切言之，模板18/模具20可以上文對於基材丨2所述實質相 同之方法被定位在基材夾盤14上以便利其彎折。因此，模 23 200813619Fi = A! X Pl (1) where A! is the area of the first recess 70 and ρι is the pressure/vacuum associated with the first chamber 86 15 200813619; and the force F2 applied to the secondary portion 94 can be defined as follows: F2 = A2 X P2 (2) where A2 is the area of the second recess 72 and P2 is the pressure/vacuum associated with the second chamber μ. The forces F1 & F2 associated with the fluid chamber 68 may be collectively referred to as the holding force Fc applied to the substrate 12 by the substrate chuck 14. Referring to Figures 1 and 4 to 6, it is therefore possible to have a different fluid chamber 68 having a different state depending on the spatial relationship between the droplets 36, the substrate 12, and the mold 20. The states of the first and second chambers 86 and 88 depend in particular on the direction of the force Fi & F2. More specifically, for a force F in a direction toward the substrate 10 12, the first chamber 86 is in a pressurized state; for a force F! in a direction away from the substrate 12, the first chamber 86 is in a vacuum State; for a force F2 in a direction toward the substrate 12, the second chamber 88 is in a pressurized state; and for a force f2 in a direction away from the substrate 12, the second chamber 88 is in a vacuum state. Thus, fluid chamber 68 may have one of four combinations associated therewith, as first and second chambers 86 and 88 each have the possibility of two different states associated therewith. Table 1 below shows the four combinations of vacuum/pressure in the first and second chambers 86 and 88 and the resulting fluid chamber 68. 20 Table 1 Combination first chamber 86 second chamber 88 fluid chamber 68 state 1 vacuum vacuum clamping 2 vacuum pressure clamping 3 pressure vacuum clamping 4 pressure pressure non-clamping / bowing first and fourth combination, first And the second chambers 86 and 88 have the same state associated with their phase 16 200813619. More specifically, in the first combination, the first chamber 86 is in a vacuum state and the second chamber 88 is in a vacuum state, and therefore, the fluid chamber 68 has a clamped state associated therewith. Also, in the fourth combination, the first chamber 86 is in a pressurized state and the second chamber 88 is in a pressurized state, and therefore, the 5 fluid chamber 68 has a non-clamping/arcing state associated therewith. In the first and second combinations, the first and second chambers 86 and 88 have different states associated therewith. However, fluid chamber 68 has a clamped state associated therewith. Therefore, the ratio of the areas aaa2 of the first and second recesses 7A and 72 is such that for a given pressure W KP and a given vacuum Kv associated with the first and second chambers 86 and 88, The force value of one of the first and third chambers and the vacuum-like relationship fjf2 is greater than the retained force F1 and one of the force values associated with the pressure states of the first and second chambers 86 and 88. Therefore, in the second combination described above, the first chamber 86 is in a vacuum state and the second chamber 88 is in a pressurized state. 15 In order to bring the fluid chamber 68 into a vacuum state: I Fi I > I F2 I (3) and, therefore, using the above equations and: I AlXKv I > I Α2χΚρ I (4) and thus the first and second recesses 70 The ratio of the area Ai & A2 of 72 and 72 is: ai/A2> | Κρ/Κν I (5) In the third combination described above, the first chamber 86 is in a pressure state and the second chamber 88 is in a vacuum state. Therefore, in order to bring the fluid chamber 68 into a vacuum state: I | > | F! | (6) 17 200813619 And, therefore, using the above equations (1) and (2): I A2xKv I > IA!xKp I (7 And thus the ratio of the area 乂 and the 八 of the first and second recesses 70 and 72 are respectively 5. 5 ai / A2 < I Ky / Kp I (8) Therefore, it is apparent that the first and second chambers 86 and 88 When in different states, the fluid chamber 68 has a vacuum state associated therewith, and the areas eight and eight of the first and second recesses 70 and 72 can be defined as follows: I Kp / Kv I < A! / A2 < I Kv/Kp I (9) 10 In one example, KP can be approximated to 40 kPa and Kv can be approximated to -80 kPa, and thus the ratio of eight to eight can be defined as follows: 〇.5<A!/A2< 2 (1〇) Still a 'pressure amount' in the fluid chamber 68 in one of the non-clamping/bow states can be varied. More specifically, the processor 56, which is operated by a battery 15 readable program stored in the memory 58, can be changed by the pump systems 82 and 88, respectively, due to electrical conduction with the pump systems 82 and 84, respectively. And a pressure amount in the second chambers 86 and 88. Referring to Figures 1 through 3, as described above, a distance # between the mold 20 and the substrate 12 is modified to define a desired volume of 20 filled with a polymeric material. Still, after solidification, the polymeric material 34 conforms to the shape of the surface 46 of the substrate 12 and the patterned surface 22 to define the patterned layer 48 on the substrate 12. Thus, in one of the volumes defined by the droplets 36 of the matrix array 38, a gas is present. The gas and/or gas capsules can be such gases as, but not limited to, air, nitrogen, carbon dioxide, and helium. The 18 200813619 gas between the substrate 12 and the mold 2 can be particularly caused by a plurality of substrates 12 and molds 2 . Therefore, it is possible to reduce the filling time of the mold 20 as described above. The filling time is particularly dependent on the evacuation and/or dissolution of the gas and/or gas capsule between the substrate 12 and the mold 20 and between the substrate 12 and the mold 20 into the polymeric material % and/or 5 diffusion. It depends on the time required in the polymeric material 34. Accordingly, a method and system for preventing or minimizing gas trapping between the mold 2 and the substrate 12 is described below. Referring to Figures 1 and 8, a method for venting the gas between the substrate 12 and the mold is shown. More specifically, in step 100, as described above, the polymeric material 104 can be dispensed by spin coating, spin coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film The deposition and the like are positioned on the substrate 12. In a further embodiment, polymeric material 34 can be positioned on mold 20. Referring to Figures 5, 6, 8, and 9, in step 1 〇 2, a 15 shape of the substrate 12 can be altered such that a distance defined between the mold 20 and the substrate 12 at a central portion of the substrate 12 is The mountain is smaller than a distance defined between the mold 2 and the substrate 12 at the remainder of the substrate 12. In one example, the distance mountain is less than 屯 and the distance 4 is defined at an edge of the substrate 12. In a further embodiment, the distance mountain can be defined at any desired location of the substrate 12. The shape of the substrate 12 can be altered by controlling a pressure/vacuum of a plurality of fluid chambers 68. More specifically, the fluid chamber 68, which overlaps a portion 98 of the substrate 12, is in a non-clamp/bow shape so that the portion 98 of the substrate 12 is arched toward the mold 2 and away from the substrate chuck 14. Also, the fluid chamber 68, which overlaps a portion 98 of the substrate 12 in the non-clamped/arched state, appears simultaneously with a portion of the substrate 12, 99 19 200813619, and the remaining fluid chambers 68 are in a clamped state. The substrate 12 is held on the substrate chuck 14. Referring to Figures 7, 10, and 11, in step 1 〇 4, as described above for the second, the embossing head 30, the stage 16, or both of the drawings shown in Fig. 1 can be changed from 5 to the mountain, such as As shown in Fig. 9, the primary portion of the mold 2 is brought into contact with the primary portion of the drip lake. As shown, a central portion of the mold 20 contacts a portion of the drop % before the remainder of the mold 20 contacts the remaining drops of the drop 36. However, in a further embodiment, any portion of the mold 2 can contact the droplets 36 prior to the remainder of the mold 20. Thus, as shown, the 10 cookware 20 series substantially simultaneously contacts all of the drip particles associated with the row, as shown in FIG. This causes the droplets 36 to disperse and create an adjacent liquid sheet 120 of polymeric material 34. The edges 122a and 122b of the liquid sheet 120 define a liquid-gas interface 124a and 124b that can be used to push the gas in the volume 96 toward the edges 128a, 128b, 128c, and 12, respectively. The volume 96 of the droplets 36 in the line Cl_C5. The system 15 defines a gas passage through which gas can be pushed toward the edges 128a, 128b, 128c, and i28d. As a result, the liquid-gas interfaces 124a and 124b together with the gas passage prevent or reduce gas trapping in the liquid sheet 120. To Figures 6 and 8, at step 106, the shape of the substrate 12 can be further modified as the distance from the mountain is further reduced, such that the desired volume defined between the mold 20 and the substrate 12 can be filled with the polymeric material 34, as above. Referring to the figures, more specifically, the shape of the substrate 12 can be modified via the fluid chamber 68 along with a reduced distance mountain via the embossing head 30, the stage 16, or both. More specifically, The amount of pressure in the second and second chambers 86 and 88 of the fluid chamber 68, which overlaps the portion 98 of the substrate 12, can be varied, as shown in Fig. 9, 2008. The distance shown is reduced and overlaps the portion 98 of the substrate 12. The amount of pressure in the first and second chambers 86 and 88 of the fluid chamber 68 can be reduced, as shown in Fig. 9. The substrate shown in Fig. 9 is reduced in distance from the mountain and the substrate shown in Fig. 9. The above-described pressure reduction in the first and second chambers 86 5 and 88 of the portion 98 of the stacked fluid chamber 68 is associated with the droplets 36 in rows c2 and c4 as shown in FIG. The polymeric material 34 is dispersed to become included in the adjacent fluid sheet 120, as shown in Fig. 12. The distance mountain shown in Fig. 9 can be combined with the fluid overlapping the portion 98 of the substrate 12 shown in Fig. 9. The amount of pressure in the first and second chambers 86 and 88 of the chamber 68 is reduced and further reduced such that the mold 10 20 subsequently becomes contacted with the droplets 36 associated with the rows 1 and 5, thereby associating them The polymeric material 34 is dispersed to become included in the adjacent sheet 120, as shown in Figure 13. In a further embodiment, the first and second chambers 86 of the fluid chamber 68 that overlap the portion 98 of the substrate 12 and The pressure within 88 can be lowered to position portion 98 of substrate 12 on substrate chuck 14, as shown in Figure 14. In a further embodiment, with substrate 12 The first and second chambers 86 and 88 of the fluid chamber 68, which are stacked 98, may have a vacuum after the droplets 36 are dispersed. Referring to Figures 8 and 13, it can be seen that the interfaces 124a and 124b have been moved to the edges, respectively. 128c and 128a, so that the gas in the remaining volume % has an unobstructed path for the shifting' as shown in Fig. u. This allows the gas in the volume % of 20 shown in the nth figure to be self-deflending with the base 20 The materials 12 are ploughed relative to the edges 128a, 128b, 128c, and 128. In this manner, it is possible to prevent or reduce the gas and/or the airbag from being trapped between the substrate 12 and the mold 2 and in the patterned layer 48, as shown in Fig. 3. Referring to Figures 1 and 8, in Step Township, as described above with reference to Figure 1, 21 200813619 polymeric material 34 can then be solidified and/or crosslinked to define a patterned layer 48' as shown in Figure 3. Subsequent to step n, the mold 2 can be separated from the patterned layer 48. Referring to Figures 1, 8 and 15, as described above, the shape of the substrate 12 can be modified in the first five directions. However, in a further embodiment, the shape of the substrate 12 can be modified simultaneously in the first and second directions, wherein the second direction extends orthogonal to the first direction. More specifically, the substrate 12 can be modified such that a central portion of the substrate 12 contacts the mold 2, and thus a central portion of the droplets 36 is before the remaining droplets of the droplets 36 contact the mold 3 Contact with the mold 2, as described above with reference to Figure 10 above. This causes the droplets 36 to disperse and create an adjacent liquid sheet 120 of polymeric material 34, defining a liquid-gas interface 124 that can be used to radially outwardly push the gas in volume 96. In one example, the liquid sheet 120 can have a circular or circular-like expansion of the liquid-gas interface 124 to radially outwardly push the gas in the volume 96 toward the edges 128a, 128b, 128c, and 128d. However, in a further embodiment, the shape of the substrate 12 can be modified in any direction to create any geometry desired to push the gas in the volume 96 radially outwardly to the edges 128a, 128b, 128c, and 128d. The liquid sheet 120, which is in the shape of a sphere, a cylinder or the like, prevents or minimizes gas and/or gas pockets from trapping between the substrate 12 and the mold 120 and in the patterned layer 48, as shown in FIG. In a further embodiment, the columns and rows of the first and second chambers 86 and 88 may each generate no pressure/vacuum. Referring to Figure 16, in a further embodiment, the substrate chuck 14 can be further utilized to facilitate separation between the mold 20 and the patterned layer 48 on the substrate 12. More specifically, the separation of the mold 20 from the patterned layer 48 is achieved by applying a separation force Fs to the template 18 and the mold 22 200813619 20. The separating force Fs has a magnitude sufficient to overcome the adhesion between the mold 20 and the patterned layer 48 and the resistance of the substrate 12 to strain (deformation). It is believed that the deformation of the substrate 12-portion facilitates the separation of the mold/20 from the patterned layer 48. Therefore, it may be desirable to minimize the magnitude of the separation force to achieve separation of the mold 20 from the patterned layer 48. Minimizing the separation force F s value is particularly convenient for the alignment between the mold 20 and the substrate 12 to increase the ratio of the template patterned area vs the total template area, and to minimize the template 18 and the mold 20 The probability of structural compromise of the substrate 12 and the patterned layer 48. 10 Thus, the pressure magnitude of one of the fluid chambers 68 can be varied as described above. Thus, as described above, during separation of the mold 2 from the patterned layer 48, the fluid chamber 68 overlapping the portion 13 of the substrate 12 can be in a non-clamped/arched state. As a result, the fluid chamber 68 which is overlapped with the portion 13 of the substrate 12 can apply the clamping force Fc, force 匕 and 15 F2 as shown in Fig. 7 in the direction substantially the same as the direction of the separation force Fs. As a result, the value of the separation force Fs required to separate the mold 2 from the pattern layer 48 can be lowered. More specifically, the amount of clamping force Fc that overlaps the portion 13 of the substrate 12 is established to facilitate strain (deformation) of the portion 13 of the substrate 12 in response to the separation force Fs. It should be noted that the clamping force Fc value superimposed on the portion 13 of the substrate 12 may have the portion of the substrate 12 located outside the portion 13 held on the substrate chuck 14 when it is subjected to a force of 20 minutes Fs. Any value you want. Referring to Fig. 1, in another further embodiment, the above method of bending the substrate 12 via the substrate chuck 14 can be similarly applied to the stencil 18/mold 2 〇. More specifically, the template 18/mold 20 can be positioned on the substrate chuck 14 in substantially the same manner as described above for the substrate 以 2 to facilitate bending thereof. Therefore, the model 23 200813619
上述本發明的實施例係為示範性 心〜即砀不靶性。可對於上述揭示作 而仍位於本發明的範圍内。因此， 出許多改變及修改， q w乾固内。因此，本 而是應參照申請專利範 發明的範圍不應受限於上文描述，而 圍及其均等物的完整範圍來決定。 【圖式簡單說^明】 模具之微影系統的 第1圖為一具有與一基材分開的一 ίο簡化側視圖，該基材位於一基材夾盤上； 第2圖為顯示位於第丨圖所示基材的一區上之壓印材料 滴粒的一陣列之俯視圖； 第3圖為第1圖所示基材之簡化側視圖，其具有一位於 其上之圖案狀層； 15 第4圖為第1圖所示的基材夾盤之側視圖； 弟5圖為苐1圖所示的基材夾盤之俯視圖，其顯示與基 材夾盤的複數個流體室呈流體導通之泵系統的複數個行； 第6圖為第1圖所示的基材夾盤之俯視圖，其顯示與基 材的複數個流體室呈流體導通之泵系統的複數個列； -0 第7圖為兩者皆顯示於第1圖中的基材及基材失盤之一 部分的分解圖； 第8圖為顯示一用以圖案化第1圖所示基材的_區之方 法之流程圖； 第9圖為第1圖所示基材及模具之側視圖，其中基材形 24 200813619 狀被更改； 第10圖為第9圖所示基材及模具之側視圖，模具係接觸 於第2圖的壓印材料滴粒之一部分； 第11至13圖為顯示第2圖所示滴粒的壓縮之俯視圖，其 5 採用第9圖所示基材的經更改形狀； 第14圖為第10圖所示基材及模具之側視圖，基材被定 位於基材夾盤上； 第15圖為顯示第2圖中滴粒的壓縮之俯視圖，其在一進 一步實施例中採用第10圖所示基材之經更改形狀；及 10 第16圖為第1圖所示的基材及模具之側視圖，模具自基 材部分地分離。 【主要元件符號說明】 10…系統 32···流體配送系統 12…紐 34…聚合材料 14…基材夾盤 36…滴粒 16…階台 38…基質陣列 18…模板 40…能量供源 20…台面，奈米壓印模具 42…直接能量 22…圖案化表面 44···路徑 24,54···凹部 46…基材表面 26,52…突部 48…圖案化層 28···模板夾盤 50…殘留層 30…壓印頭 56…處理器 25 200813619 58…記憶體 60…夹盤體部 62…第一表面，第一側 64…第二側 66…側或邊緣表面 68,68a-68u…流體室 70…第一凹部 72…第二凹部 74…支撐區 76…第二支撲區 78578^78^78〇978^78^80?80^80^ 80。，80_。".通路 82〇,82^82〇?82482^84?84^84^84〇5 84(1584€，8813,88〇,88(15886".泵系統 86…第一室 88…第二室 90…疊置於一次組的流體室之基 材的部分 92,94…次部分 96…基質陣列的滴粒之間所界定 之容積 98,99…基材的部分 100，102，104，106，108，110···步驟 120…液體片The above-described embodiments of the present invention are exemplary, that is, non-targeting. It is still within the scope of the invention for the above disclosure. Therefore, many changes and modifications have been made, q w dry. Therefore, the scope of the invention should be determined by reference to the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 of the lithography system of a mold is a simplified side view having a separate substrate from a substrate, the substrate being placed on a substrate chuck; A top view of an array of embossed material droplets on a region of the substrate shown in FIG. 3; and FIG. 3 is a simplified side view of the substrate shown in FIG. 1 having a patterned layer thereon; Figure 4 is a side view of the substrate chuck shown in Figure 1; Figure 5 is a top plan view of the substrate chuck shown in Figure 1, showing fluid communication with a plurality of fluid chambers of the substrate chuck a plurality of rows of pump systems; Figure 6 is a top plan view of the substrate chuck shown in Figure 1, showing a plurality of columns of pump systems in fluid communication with a plurality of fluid chambers of the substrate; -0 7 The figure shows an exploded view of one of the substrate and the substrate loss plate shown in Fig. 1; Fig. 8 is a flow chart showing a method for patterning the _ region of the substrate shown in Fig. 1. Figure 9 is a side view of the substrate and the mold shown in Figure 1, wherein the substrate shape 24 200813619 is modified; Figure 10 is the base shown in Figure 9. And a side view of the mold, the mold is in contact with one of the embossing material droplets of Fig. 2; the 11th to 13th is a top view showing the compression of the granules shown in Fig. 2, wherein 5 is based on the base shown in Fig. 9. The modified shape of the material; Figure 14 is a side view of the substrate and the mold shown in Figure 10, the substrate is positioned on the substrate chuck; Figure 15 is a plan view showing the compression of the droplets in Figure 2, In a further embodiment, the modified shape of the substrate shown in Fig. 10 is used; and 10 is a side view of the substrate and the mold shown in Fig. 1, the mold being partially separated from the substrate. [Main component symbol description] 10...System 32···Fluid distribution system 12...New 34...Polymer material 14...Substrate chuck 36...Drops 16...Step 38...Substrate array 18...Template 40...Energy supply 20 ... countertop, nanoimprinting mold 42...direct energy 22...patterned surface 44···path 24, 54···recess 46...substrate surface 26,52...projection 48...patterned layer 28···template Clamp 50... Residual layer 30... Imprint head 56... Processor 25 200813619 58... Memory 60... Chuck body 62... First surface, first side 64... Second side 66... Side or edge surface 68, 68a -68u... Fluid chamber 70... First recess 72... Second recess 74... Support area 76... Second branch area 78878^78^78〇978^78^80?80^80^80. , 80_. ".Path 82〇, 82^82〇?82482^84?84^84^84〇5 84(1584€,8813,88〇,88(15886".Pump system 86...First room 88...Second room 90... a portion 92, 94...sub-portion 96 of the substrate of the fluid chamber of the primary group, a volume 98, 99...part of the substrate defined by the droplets of the matrix array 100, 102, 104, 106, 108,110···Step 120...Liquid tablets
122aJ22b…液體片的邊緣 124aJ24b…液體-氣體介面 128aJ28b，：l28c，128d· · ·邊緣 ai-a5，Ci-C5···行 A!…第一凹部70的面積 A?…第二凹部72的面積 brb5，rrr5···歹丨J 山此…距離 F!…施力π至次部分92上之力 F2…施加至次部分94上之力 Fc…夾持力 Fs…分離力 Kp…給定壓力 Κν…給定真空122aJ22b...edge of liquid sheet 124aJ24b...liquid-gas interface 128aJ28b,:l28c,128d · ·edge ai-a5,Ci-C5··· row A!...area A of the first recess 70?...the second recess 72 The area brb5, rrr5····J Shanshan...the distance F!...the force π to the force F2 on the sub-portion 92...the force Fc applied to the sub-portion 94...the clamping force Fs...the separation force Kp...given Pressure Κν... given vacuum
Pr · ·與第一室86相關聯之壓力/真空 Pr · ·與第二室88相關聯之壓力/真空 26Pr · Pressure/vacuum associated with the first chamber 86 Pr · Pressure/vacuum associated with the second chamber 88 26