TWI352874B - Chucking system comprising an array of fluid chamb - Google Patents

Chucking system comprising an array of fluid chamb Download PDF

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Publication number
TWI352874B
TWI352874B TW96111034A TW96111034A TWI352874B TW I352874 B TWI352874 B TW I352874B TW 96111034 A TW96111034 A TW 96111034A TW 96111034 A TW96111034 A TW 96111034A TW I352874 B TWI352874 B TW I352874B
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Taiwan
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fluid
chambers
chamber
substrate
fluid chamber
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TW96111034A
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Chinese (zh)
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TW200813619A (en
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Anshuman Cherala
Byung-Jin Choi
Pankaj B Lad
Steven C Shackleton
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Molecular Imprints Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

九、發明說明: 【聲明所屬之技術領域3 發明領域 feifl申請案之交叉I考 本申請案係對於2006年4月3日提申標題為“藉由調變 晶圓形狀之壓印方法,,的美國臨時專利案號60/788,777作優 先權主張且身為2005年1月31曰提申標題為“用於奈米製造 之夾持系統,,的美國專利申請案號i 1/〇47,428之一部分接續 案,該案係為2005年1月31曰提申標題為“用以將一基材扣 持至一晶圓夾盤之方法,,的美國專利申請案號11/〇47,499之 一分案專利申請案及2〇〇5年4月18日提申標題為‘‘自配置於 一基材上的一經固體化層分離一模具之方法,,的美國專利 申请案號11/108,208之一分案專利申請案,其皆合併於本文 中以供參考。 M於聯邦k助研贫或發展之聲明 美國政府在本發明中具有一付費授權及有限環境中要 求專利所有人在國家標準機構(NIST)ATp裁定之 70NANB4H3012的條件所提供之合理條件下授權他人之權 利。 C先前技術 發明背景 奈米製造係包含譬如具有數奈米或更小級數的特性之 很小結構之製造。-其巾奈米製造發揮可觀影響之領域係 在於積體電路的處理。隨著半導體處理#持續致力更大的 生產良率同時增加一基材上所形成之每單位面積的電路, 奈米製造變得益加重要。奈米製造提供較大的製程控制同 時可谷許進一步降低所形成結構之最小特性維度。已經採 用奈米製造之其他發展領域係包括生物科技、光學科技、 機械系統及類似物。 —種示範性奈米製造技術常稱為壓印微影術。示範性 壓印微影術製程詳述於許多公開案中,諸如標題為“用以將 特性配置於一基材上以複製具有最小維度變異性的特性之 方法及模具,,之以美國專利申請案號10/264 960提申的美國 專利申請案公告2004/0065976 ;以標題為“形成一層於一基 材上以便利於度量標準的製造之方法”之美國專利申請案 號10/264,926提申的美國專利申請案公告2〇〇4/〇〇65252 ;及 標題為“用於壓印微影術製程之功能性圖案化材料,,的美國 專利案號6,936,194,其皆讓渡予本發明受讓人。 上述美國專利申請案公告及美國專利案各者所揭露之 壓印微影術技術係包括將-浮雕圖案形成於_可聚合層中 及將-對應於該洋雕圖案之圖案轉移至一下方基材内。基 材可疋位在一階台上以獲得一所想要位置以便利其圖案 化。因此,採用一與基材分開之模具而在模具與基材之間 出現有-可成形液體。該液體係固體化以形成_其中記錄 有-圖案之圖案狀層,其中該圖㈣、符合接觸於液體之模 具表面的一形狀。然後模具自圖案狀層分離以使模具及基 材分開。基材及圖案狀層隨後受到將_對應於圖案狀層中 的圖案之浮雕圖案轉移至基材内之製程。 【發明内容】 依據本發明之-實施例,係特地提出_種用以固持一 基材之夾持系統,該系統包含:—夾盤體部,其具有第一 及第二相對侧,該第一側係包括配置於列與行中之流體室 的-陣列,該等流體室各包含用以界定第_及第二分開的 支撐區之第-及第二分開的凹部’其中該第一支撐區係環 繞該第二线區及該等第—及第二凹部,而該第二支擇區 環繞6玄第一凹部,其中該基材休止抵住該等第一及第二支 撐區,其中該第一凹部及與其疊置之該基材的一部分係界 定一第一室而該第二凹部及與其疊置之該基材的一部分界 定一第二室,其令該等第一室的各行及該等第二室的各列 係與一不同流體供源呈流體導通以控制流體室的該陣列中 之一流體流。 依據本發明之一實施例,係特地提出一種用以固持一 基材之夹持系統,該系統包含:一夾盤體部,其具有第一 及第二相對側,該第一側係包括一流體室,該流體室包含 用以界定第一及第二分開的支撐區之第一及第二分開的凹 部’其中該第一支撐區係環繞該第二支撐區及該等第一及 第二凹部,而該第二支撐區環繞該第二凹部,其中該基材 休止抵住該等第一及第二支樓區,其中該第一凹部及與其 疊置之該基材的一部分係界定一第一室而該第二凹部及與 其疊置之該基材的一部分界定一第二室;及一壓力控制系 統’其與該等第一及第二室呈流體導通以控制該等第一及 第二室内之一壓力使得該等第一及第二室的一者申具有一 1352874 正壓力且該等第一及第二室的其餘室中具有—負壓力,其 中為了該等第一及第二室的一者内之一給定正壓力及該等 第一及第二室的其餘室内之一負壓力,該等第一及第二凹 部之間的一面積之一比值係使得該流體室將一負力施加至 5 與該流體室疊置之該基材的一部分上。 依據本發明之一實施例,係特地提出一種用以固持一 基材之夾持糸統,該系統包含:一夾盤體部,其具有第一 及第二相對側,該第一側係包括配置於列與行中之流體室 的一陣列’該流體室各者包含用以界定第一及第二分開的 10支撐區之第一及第二分開的凹部,其中該第一支撐區係環 繞該第二支撐區及該等第一及第二凹部,而該第二支撐區 環繞該第二凹部,其中該基材休止抵住該等第一及第二支 撐區,其中該第一凹部及與其疊置之該基材的一部分係界 定一第一室而該第二凹部及與其疊置之該基材的一部分界 15定一第二室;及一壓力控制系統,其具有複數個流體供源, 其中該等第一室的各行及該等第二室的各列係與該複數個 々IL體供源之一不同流體供源呈流體導通,該壓力控制系統 係控制該等第一及第二室内之一壓力使得該等第一及第二 至的一者中具有一正壓力且該等第一及第二室的其餘室中 20具有一負壓力,其中為了該等第一及第二室的一者内之一 給定正壓力及該等第一及第二室的其餘室内之一負壓力, 該等第一及第二凹部之間的一面積之一比值係使得該流體 室將一負力施加至與該流體室疊置之該基材的一部分上。 圖式簡單說明 8 1352874 第1圖為一具有與一基材分開的一模具之微影系統的 簡化側視圖,該基材位於一基材夾盤上; 第2圖為顯示位於第1圖所示基材的一區上之壓印材料 滴粒的一陣列之俯視圖; 5 第3圖為第1圖所示基材之簡化側視圖,其具有一位於 其上之圖案狀層; 第4圖為第1圖所示的基材夾盤之側視圖;Nine, invention description: [Description of the technical field 3 invention field feifl application cross I test application for the April 3, 2006 titled "imprint method by modulating the shape of the wafer, U.S. Patent Application Serial No. 60/788,777, filed on Jan. 31, 2005, entitled <RTIgt;U.S. Patent Application Serial No. Part of the continuation case, which is a method for the purpose of holding a substrate to a wafer chuck, as described in January 31, 2005, U.S. Patent Application Serial No. 11/47,499 Patent application and the method of ''US Patent Application No. 11/108,208', the method of "separating a mold from a solidified layer on a substrate" A divisional patent application, which is hereby incorporated by reference in its entirety for all of its entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire NIST) ATp ruled by the conditions of 70NANB4H3012 BACKGROUND OF THE INVENTION The nanofabrication system comprises, for example, the manufacture of a very small structure having characteristics of several nanometers or less. - The field in which the manufacture of the towel nanometer exerts considerable influence lies in The processing of integrated circuits. As semiconductor processing continues to focus on greater production yields while increasing the number of circuits per unit area formed on a substrate, nanofabrication becomes more important. Nano fabrication provides greater Process control can also further reduce the minimum characteristic dimension of the resulting structure. Other areas of development that have been developed using nanotechnology include biotechnology, optical technology, mechanical systems, and the like. - Exemplary nanofabrication techniques are often referred to as Imprint lithography. Exemplary embossing lithography processes are detailed in a number of publications, such as the method and mold entitled "Distributing properties on a substrate to replicate characteristics with minimal dimensional variability," U.S. Patent Application Publication No. 2004/0065976, the entire disclosure of which is incorporated herein by reference. U.S. Patent Application Serial No. 10/264,926, issued to U.S. Patent Application Serial No. 10/264,926, the disclosure of which is incorporated herein by reference. Patterned materials, U.S. Patent No. 6,936,194, issued to the assignee of the present disclosure. The embossed pattern is formed in the _polymerizable layer and transfers the pattern corresponding to the embossed pattern into a lower substrate. The substrate can be placed on a first stage to obtain a desired position to facilitate its patterning. A moldable liquid is present between the mold and the substrate using a mold separate from the substrate. The liquid system is solidified to form a patterned layer in which a pattern is recorded, wherein the figure (4) conforms to a shape of the surface of the mold contacting the liquid. The mold is then separated from the patterned layer to separate the mold from the substrate. The substrate and the patterned layer are then subjected to a process of transferring the embossed pattern corresponding to the pattern in the patterned layer into the substrate. SUMMARY OF THE INVENTION In accordance with an embodiment of the present invention, a clamping system for holding a substrate is specifically provided, the system comprising: a chuck body having first and second opposing sides, the first One side includes an array of fluid chambers disposed in columns and rows, each of the fluid chambers including first and second separate recesses defining a first and second separate support regions, wherein the first support The substrate surrounds the second line region and the first and second recesses, and the second control region surrounds the sixth first recess, wherein the substrate rests against the first and second support regions, wherein the The first recess and a portion of the substrate superposed thereon define a first chamber and the second recess and a portion of the substrate superposed thereon define a second chamber that allows the rows of the first chamber and The columns of the second chambers are in fluid communication with a different fluid supply to control one of the fluid streams in the array of fluid chambers. According to an embodiment of the present invention, a clamping system for holding a substrate is specifically provided, the system comprising: a chuck body having first and second opposite sides, the first side comprising a a fluid chamber including first and second separate recesses for defining first and second separate support regions, wherein the first support region surrounds the second support region and the first and second portions a recess, and the second support region surrounds the second recess, wherein the substrate rests against the first and second branch regions, wherein the first recess and a portion of the substrate overlapped therewith define a a first chamber and the second recess and a portion of the substrate superposed thereon define a second chamber; and a pressure control system 'which is in fluid communication with the first and second chambers to control the first One of the pressures in the second chamber causes one of the first and second chambers to have a positive pressure of 1352874 and a negative pressure in the remaining chambers of the first and second chambers, wherein for the first and the first One of the two rooms is given a positive pressure and the first a negative pressure in one of the remaining chambers of the second chamber, and a ratio of an area between the first and second recesses causes the fluid chamber to apply a negative force to a portion of the substrate superposed with the fluid chamber on. In accordance with an embodiment of the present invention, a clamping system for holding a substrate is specifically provided, the system comprising: a chuck body having first and second opposing sides, the first side comprising An array of fluid chambers disposed in columns and rows - each of the fluid chambers includes first and second separate recesses defining first and second spaced apart 10 support regions, wherein the first support region is wrapped The second support region and the first and second recesses surround the second recess, wherein the substrate rests against the first and second support regions, wherein the first recess and a portion of the substrate superposed thereon defines a first chamber and the second recess and a portion of the substrate 15 overlapping the substrate define a second chamber; and a pressure control system having a plurality of fluids for a source, wherein each of the rows of the first chambers and the columns of the second chambers are in fluid communication with a different fluid supply source of the plurality of 々IL body sources, the pressure control system controlling the first and the first One of the two indoor pressures makes the first and second to one Having a positive pressure and having a negative pressure in the remaining chambers 20 of the first and second chambers, wherein a positive pressure is given for one of the first and second chambers and the first And a negative pressure of one of the remaining chambers of the second chamber, wherein a ratio of an area between the first and second recesses causes the fluid chamber to apply a negative force to the substrate overlapping the fluid chamber Part of it. BRIEF DESCRIPTION OF THE DRAWINGS 8 1352874 Figure 1 is a simplified side view of a lithography system having a mold separate from a substrate, the substrate being placed on a substrate chuck; Figure 2 is shown in Figure 1 A top view of an array of embossed material droplets on a region of the substrate; 5 Figure 3 is a simplified side view of the substrate of Figure 1, having a patterned layer thereon; Figure 4 a side view of the substrate chuck shown in Figure 1;

第5圖為第1圖所示的基材夾盤之俯視圖,其顯示與基 材夾盤的複數個流體室呈流體導通之泵系統的複數個行; 10 第6圖為第1圖所示的基材夾盤之俯視圖,其顯示與基 材的複數個流體室呈流體導通之泵系統的複數個列; 第7圖為兩者皆顯示於第1圖中的基材及基材夾盤之一 部分的分解圖; 第8圖為顯示一用以圖案化第1圖所示基材的一區之方 15 法之流程圖; 第9圖為第1圖所示基材及模具之側視圖,其中基材形 狀被更改; 第10圖為第9圖所示基材及模具之側視圖,模具係接觸 於第2圖的壓印材料滴粒之一部分; 20 第11至13圖為顯示第2圖所示滴粒的壓縮之俯視圖,其 採用第9圖所示基材的經更改形狀; 第14圖為第10圖所示基材及模具之側視圖,基材被定 位於基材夾盤上; 第15圖為顯示第2圖中滴粒的壓縮之俯視圖,其在一進 9 1352874 一步實施例中採用第10圖所示基材之經更改形狀;及 第16圖為第1圖所示的基材及模具之側視圖,模具自基 材部分地分離。 C實施方式3 5 較佳實施例之詳細說明 參照第1圖,顯示一用以形成一浮雕圖案於一基材12上 之系統10。基材12可搞合至一基材夾盤14,如下文進一步 描述。基材12及基材夾盤14可被支撐於一階台16上。並且, 基材12、及基材夾盤14可定位在一基底(未圖示)上。階台16 10 可提供沿X及y轴之動作。 與基材12分開者係為一具有自其延伸前往基材12的一 台面20之模板18且其上具有一圖案化表面22。並且,台面 20可稱為模具20。模具20亦可稱為奈米壓印模具2〇。一進 一步實施例中,模板18可實質地不含模具2〇。模板18及/或 15模具可自包括但不限於炫合石夕土、石英、石夕、有機聚合 物、矽氧烷聚合物、硼矽酸鹽玻璃、氟碳聚合物、金屬、 及硬化藍寶石之此等材料形成。如圖所示,圖案化表面22 係包含由複數個分開的凹部24及突部26所界定之特性。然 而,一進一步實施例中,圖案化表面22可實質為平坦及/或 20平面性。圖案化表面22可界定一原始圖案,其形成一將被 形成於基材12上之圖案的基礎。模板18可輕合至一模板爽 盤28 ’模板夾盤28係為任何夾盤包括但不限於真空、銷型、 溝槽型、或電磁性,如標題為“用於壓印微影術製程之高精 密定向對準及間隙控制,,之美國專利案號6,873,〇87所描 10 1352874 述,該案合併於本文中以供參考。並且,模板夹盤28可辑 合至一壓印頭30以便利模板18及因此包括模具2〇之運動。 系統10進一步包含一流體配送系統32。流體配送系統 32可與基材12呈流體導通藉以將聚合材料34沉積於其上。 5系統10可包含任何數量的流體配送器,且流體配送系統32 中可包含複數個配送單元。聚合材料34可利用任何已知技 術被定位在基材12上,譬如,滴落配送、旋塗、沾塗、化 學氣相沉積(CVD)、物理氣相沉積(PVD)、薄膜沉積、厚膜 沉積、及類似方式。如第2圖所示,聚合材料34可以複數個 10分開的滴粒36沉積在基材12上,而界定一基質陣列%。一 範例中’各滴粒36可具有近似1至1〇皮升的一單位容積。基 質陣列38的滴粒36可配置於五行Cl-C5及五列Γι·^。然而, 滴粒36可配置於基材12上之任何二維配置中。一般而古, 在模具20與基材12之間界定所想要的容積之前將聚合材料 15 34配置於基材12上。然而’聚合材料34可在已經獲得所想 要容積之後充填該容積。 參照第1至3圖,系統10進一步包含沿著—路徑料耦合 至直接能量42之一能量42供源4(^壓印頭3〇及階台^係^ 形為可分別將模具20及基材12配置成疊置且配置於路徑44 2〇中。壓印頭30、階台16、或兩者係改變模具20與基材12之 間的—距離以界定其間被聚合材料34充填之一 ^想要容 積。更確切言之’滴粒36可進入且充填凹部24。滴粒麻 填圖案化表面22界定之圖案所需要的時間可被定義為模具 2〇的“充填時間’,。α聚合材料34充填所想要的容積之後’,、 11 1352874 供源40產生譬如寬頻紫外輻射等能量42,其造成聚合材料 34符合基材12的一表面46及圖案化表面22之形狀而產生固 體化及/或交聯,而界定基材12上之一圖案狀層48。圖案狀 層48可包Ί 殘留層50及複數個顯示為突部52及凹部54之 5特性。系統10可被一與階台16 '壓印頭30、流體配送系統 32、及供源40呈資料導通之處理器56所調節,而以儲存在 記憶體58中的一電腦可讀取程式操作。 參照第1及4至6圖,如上述,系統10包含基材夹盤14。 基材夾盤14適可採用真空技術來扣持基材I]。基材爽盤14 10係包含一具有第一 62及第二64相對側之夾盤體部6〇。一 側、或邊緣表面66係延伸於第一62及第二64相對側之間。 第一側62包含複數個流體室68 »如圖所示,基材夾盤14包 含流體室68a-68u ;然而,一進一步實施例中,基材夾盤14 可包含任何數量的流體室。如圖所示,流體室68a_68u可被 15定位為配置在五行及五列b|_b5中之一陣列。然而,流 體室68可配置在夾盤體部6〇中的任何二維配置中。為了圖 不簡單起見,第5及6圖中分別分離地顯示行a|_a5及列bi_b2。 參照第4至6圖,各流體室68包含一第一凹部7〇及一與 第一凹部70分開之第二凹部72,而界定一支撐區74及一第 20二支撐區76。第二支撐區76環繞第二凹部72。第一支撐區 74¾繞第二支撐區76及第一及第二凹部7〇及72。複數個通 路78及80形成於夾盤體部6〇中以將各流體室68分別放置成 與一泵系統82及84呈流體導通。更確切言之,流體室68的 各第一凹部70可經由通路78與泵系統82呈流體導通,且各 12 1352874 第二凹部72可經由通路80與泵系統84呈流體導通。各泵系 統82及84中可包括一或多個泵。 參照第4及5圖,流體室68的一行ai_a5中之流體室68的 各第一凹部70係可經由通路78與系系統82呈流體導通。更 5確切吕之’行ai中之流體室68d、68i、及68η的第一凹部70 可經由一通路7 8 a與一泵系統8 2 a呈流體導通;行a 2中之流體 至68a、68e、68j、68〇、及68s的第一凹部7〇可經由一通路 78b與一泵系統82b呈流體導通;行as中之流體室68b、68f、 68k、68p、及68t的第一凹部70可經由一通路78c與一泵系統 10 82c呈流體導通;行a4中之流體室68c、68g、681、68q、及 68u的第一凹部7〇可經由一通路78d與一泵系統82d呈流體 導通,行as中之流體室68h、68m、及68ι•的第一凹部70可經 由一通路78e與一泵系統82e呈流體導通。 參照第4及6圖,尚且,一列b〗-b5中之流體室68的各第 15二凹部72係可經由通路8〇與泵系統84呈流體導通。更確切 言之,列b,中之流體室68a、08b、及68c的第二凹部72可經 由一通路80a與一泵系統84a呈流體導通;列匕中之流體室 68d、68e、68f、68g、及68h的第二凹部72可經由一通路80b 與一泵系統84b呈流體導通;列b3中之流體室68i、68j、68k、 20 681、及68m的第二凹部72可經由一通路8〇c與一泵系統84c 呈流體導通;列h中之流體室68η、68〇、68p、68q、及68r 的第二凹部72可經由一通路80d與一泵系統84d呈流體導 ’且列bs中之流體室68s、68t、及68u的第二凹部72可經 由一通路80e與一泵系統84e呈流體導通。 13 1352874Figure 5 is a top plan view of the substrate chuck shown in Figure 1 showing a plurality of rows of pump systems in fluid communication with the plurality of fluid chambers of the substrate chuck; 10 Figure 6 is shown in Figure 1 A top view of a substrate chuck showing a plurality of columns of pump systems in fluid communication with a plurality of fluid chambers of the substrate; Figure 7 is a substrate and substrate chuck both shown in Figure 1 An exploded view of a portion; Fig. 8 is a flow chart showing a method for patterning a region of the substrate shown in Fig. 1; and Fig. 9 is a side view of the substrate and the mold shown in Fig. 1. Wherein the shape of the substrate is modified; Fig. 10 is a side view of the substrate and the mold shown in Fig. 9, the mold is in contact with one portion of the embossing material of Fig. 2; 20 Figures 11 to 13 show 2 is a top view of the compression of the droplets, using the modified shape of the substrate shown in Fig. 9; Fig. 14 is a side view of the substrate and the mold shown in Fig. 10, the substrate is positioned on the substrate holder Fig. 15 is a plan view showing the compression of the droplets in Fig. 2, which is carried out in a step by step in a first embodiment of 9 1352874. Change the shape of the substrate through; and graph shown in FIG. 16 is a side view of a first substrate and a mold, the mold material is separated from the base part. C. Embodiment 3 5 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Referring to Fig. 1, a system 10 for forming a relief pattern on a substrate 12 is shown. Substrate 12 can be joined to a substrate chuck 14, as further described below. Substrate 12 and substrate chuck 14 can be supported on first stage stage 16. Also, the substrate 12 and the substrate chuck 14 can be positioned on a substrate (not shown). Stage 16 10 provides motion along the X and y axes. Separate from the substrate 12 is a template 18 having a face 20 extending therefrom to the substrate 12 and having a patterned surface 22 thereon. Also, the table top 20 may be referred to as a mold 20. The mold 20 can also be referred to as a nanoimprint mold 2〇. In a further embodiment, the template 18 can be substantially free of the mold 2〇. Template 18 and / or 15 molds may include but are not limited to dazzling stone, quartz, stone, organic polymer, siloxane polymer, borosilicate glass, fluorocarbon polymer, metal, and hardened sapphire These materials are formed. As shown, the patterned surface 22 includes properties defined by a plurality of separate recesses 24 and protrusions 26. However, in a further embodiment, the patterned surface 22 can be substantially flat and/or 20 planar. The patterned surface 22 can define an original pattern that forms the basis of a pattern to be formed on the substrate 12. The template 18 can be lightly coupled to a template plate 28 'template chuck 28 is any chuck including, but not limited to, vacuum, pin, groove, or electromagnetic, as described in the heading "for embossing lithography processes The high-precision directional alignment and the gap control are described in U.S. Patent No. 6,873, the entire disclosure of which is incorporated herein by reference. 30 to facilitate movement of the template 18 and thus the mold 2. The system 10 further includes a fluid dispensing system 32. The fluid dispensing system 32 can be in fluid communication with the substrate 12 to deposit polymeric material 34 thereon. Any number of fluid dispensers are included, and a plurality of dispensing units can be included in the fluid dispensing system 32. The polymeric material 34 can be positioned on the substrate 12 using any known technique, such as, for example, drip dispensing, spin coating, dip coating, Chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and the like. As shown in FIG. 2, the polymeric material 34 may be deposited on a substrate by a plurality of 10 separate droplets 36. Defining a matrix Column %. In one example, 'each droplet 36 may have a unit volume of approximately 1 to 1 〇 liter. The droplets 36 of the matrix array 38 may be disposed in five rows of Cl-C5 and five columns Γι·^. 36 can be disposed in any two-dimensional configuration on substrate 12. Typically, polymeric material 154 is disposed on substrate 12 prior to defining the desired volume between mold 20 and substrate 12. However, 'polymerization The material 34 can be filled with the volume after the desired volume has been obtained. Referring to Figures 1 to 3, the system 10 further includes a source 42 coupled to the direct energy 42 along the path material to supply the source 4 (^press head 3 And the step is configured such that the mold 20 and the substrate 12 can be disposed to be stacked and disposed in the path 44 2 . The stamping head 30 , the step 16 , or both change the mold 20 and the substrate 12 . The distance between the distances is defined to define the desired volume of the material to be filled 34. More precisely, the 'droplet 36 can enter and fill the recess 24. The time required for the droplets to fill the pattern defined by the patterned surface 22 It can be defined as the "filling time" of the mold 2〇. The alpha polymer material 34 is filled with the desired volume. After the ', 11, 1352874 source 40 generates energy 42 such as broadband ultraviolet radiation, which causes the polymeric material 34 to conform to the shape of a surface 46 of the substrate 12 and the patterned surface 22 to cause solidification and/or cross-linking, and is defined A patterned layer 48 on the substrate 12. The patterned layer 48 may comprise a residual layer 50 and a plurality of features shown as protrusions 52 and recesses 54. System 10 may be stamped by a stage 16 'imprint head 30 The fluid distribution system 32, and the processor 40, which is powered by the data source 40, is operated by a computer readable program stored in the memory 58. Referring to Figures 1 and 4 to 6, as described above, the system 10 includes a substrate chuck 14. The substrate chuck 14 is adapted to hold the substrate I] by vacuum technology. The substrate slab 14 10 includes a chuck body 6 具有 having opposite sides of the first 62 and the second 64. One side, or edge surface 66, extends between the opposite sides of the first 62 and second 64. The first side 62 includes a plurality of fluid chambers 68. As shown, the substrate chuck 14 includes fluid chambers 68a-68u; however, in a further embodiment, the substrate chuck 14 can include any number of fluid chambers. As shown, the fluid chambers 68a-68u can be positioned 15 to be arranged in one of five rows and five columns b|_b5. However, the fluid chamber 68 can be disposed in any two-dimensional configuration in the chuck body 6〇. For the sake of simplicity, the rows a|_a5 and the column bi_b2 are separately displayed in the fifth and sixth figures. Referring to Figures 4 through 6, each fluid chamber 68 includes a first recess 7a and a second recess 72 spaced apart from the first recess 70 to define a support region 74 and a 20th support region 76. The second support zone 76 surrounds the second recess 72. The first support region 743a surrounds the second support region 76 and the first and second recesses 7 and 72. A plurality of passages 78 and 80 are formed in the chuck body 6'' to place the fluid chambers 68 in fluid communication with a pump system 82 and 84, respectively. More specifically, each of the first recesses 70 of the fluid chamber 68 can be in fluid communication with the pump system 82 via passages 78, and each of the 12 1352874 second recesses 72 can be in fluid communication with the pump system 84 via passages 80. One or more pumps may be included in each of the pump systems 82 and 84. Referring to Figures 4 and 5, each of the first recesses 70 of the fluid chamber 68 in one row ai_a5 of the fluid chamber 68 can be in fluid communication with the system 82 via passage 78. Further, the first recess 70 of the fluid chambers 68d, 68i, and 68n in the row Ai can be fluidly connected to a pump system 8 2 a via a passage 7 8 a; the fluid in row a 2 to 68a, The first recess 7〇 of 68e, 68j, 68〇, and 68s may be in fluid communication with a pump system 82b via a passage 78b; the first recess 70 of the fluid chambers 68b, 68f, 68k, 68p, and 68t in row as The fluid can be in fluid communication with a pump system 108c via a passage 78c; the first recess 7b of the fluid chambers 68c, 68g, 681, 68q, and 68u in row a4 can be in fluid communication with a pump system 82d via a passage 78d. The first recess 70 of the fluid chambers 68h, 68m, and 68i in the row as can be in fluid communication with a pump system 82e via a passage 78e. Referring to Figures 4 and 6, still, each of the 15th recesses 72 of the fluid chamber 68 in a row b-b5 can be in fluid communication with the pump system 84 via the passage 8〇. More specifically, the second recess 72 of the fluid chambers 68a, 08b, and 68c in column b can be in fluid communication with a pump system 84a via a passage 80a; fluid chambers 68d, 68e, 68f, 68g in the train And the second recess 72 of 68h can be in fluid communication with a pump system 84b via a passage 80b; the second recess 72 of the fluid chambers 68i, 68j, 68k, 20 681, and 68m in the row b3 can be connected via a passage 8 c is in fluid communication with a pump system 84c; the second recess 72 of the fluid chambers 68n, 68〇, 68p, 68q, and 68r in column h can be fluidly coupled to a pump system 84d via a passage 80d and in column bs The second recess 72 of the fluid chambers 68s, 68t, and 68u can be in fluid communication with a pump system 84e via a passage 80e. 13 1352874

ίο 參照第1及4至6圖,當基材12被定位在基材央盤^上 時,基材12休止抵住夾盤體部6〇的第-表面62 ’而覆蓋住 μ體至68 ’更確切來説覆蓋住各流體室68的第-及第二凹 部70及72。更確财之,流體㈣的各第—凹㈣及與其 疊置之基材的-部分係界第—室86,·流體室仰的各 第二凹部72及與其疊置之基材部分係界定—第二室 88。尚且’泵系統82係操作以控制第—室狀内之一虔力/真 空而泵系統84係操作以控制第二室88内之—壓力/真空。可 建立第-及第二室86及88内的壓力/真空以維持基材_ 位置來避免或降低基材12自基材夾盤14之分離同時更改基 材12的形狀’如下文進—步描述。泵系統似料可與處2 器56呈資料導通’而以記憶體58上所儲存之一電腦可讀取 私式·!呆作來控制系系統82及84。Ίο Referring to Figures 1 and 4 to 6, when the substrate 12 is positioned on the substrate plate, the substrate 12 rests against the first surface 62' of the chuck body 6〇 to cover the body to 68. 'More specifically, the first and second recesses 70 and 72 of each fluid chamber 68 are covered. More precisely, each of the first recess (four) of the fluid (4) and the portion of the substrate overlapped with the first chamber 86, the second recess 72 of the fluid chamber and the substrate portion overlapped therewith are defined - second chamber 88. Still, the pump system 82 is operative to control one of the first chambers/the vacuum and the pump system 84 is operated to control the pressure/vacuum within the second chamber 88. The pressure/vacuum in the first and second chambers 86 and 88 can be established to maintain the substrate_ position to avoid or reduce the separation of the substrate 12 from the substrate chuck 14 while changing the shape of the substrate 12 as follows. description. The pump system is expected to be in communication with the device 56 and is controlled by a computer readable private memory stored on the memory 58 to control the system systems 82 and 84.

參照第4及5圖,更確切言之,泵系統咖係操作以控制 15行3丨中之流體室68d、他、及68n的第—室%内之一壓力/真 空;泵系統88b係操作以控制行幻中之流體室68a、68e、6幻、 68〇、及68s的第-室86内之一壓力/真空;栗系統版係操作 以控制行七中之流體室68b、68f、68k、68p、及他的第— 室8 6内之一壓力/真空;泵系統8 8 d係操作以控制行%中之流 20體室68c、68g、68卜68q、及68u的第一室86内之一壓力/ 真空;且泵系統88e係操作以控制行as中之流體室68h ' 68m、及68r的第一室86内之一壓力/真空。 參照第4及6圖,尚且,泵系統84a係操作以控制列…中 之流體室68a、68b、及68c的第二室88内之一壓力/真空.泵 14 1352874 系統84b係操作以控制列b2中之流體室68d、68e、68f、68g、 及68h的第二室88内之一壓力/真空;泉系統8如係操作以控 制列b3中之流體室68i、68j、68k、681、及嶋的第二室88 内之-壓力/真空;泵系統84d係操作以控制列、中之流體室 5 68η、68〇、68p、68q、及晰的第二_内之—壓力/真空; 且粟系統叫係操作以控制列b5中之流體室68s、68t、及68u 的第一至88内之一壓力/真空。 參照第4至7圖,各流體室68可具有_其相關聯之一 夹持狀態或2)與其相關聯之_非夾持/弓形,依據所想要應 〇用而定’如下文進-步描述。更確切言之,如上述第一 及第-至86及88係分別與第一及第二凹部7〇及72相關聯。 因此,一被施加至基材12—部分上之力可能係特別依據與 基材12部分疊置之第一及第二凹部7〇及72的面積之一量值 以及疊置於基材12部分之第一及第二室86及88内的壓力/ 15真空之一量值而定。更確切言之,對於疊置於一次組的流 體室68之基材12的一部分9〇,施加至部分9〇上之力係為一 施加至疊置於第一凹部70/第一室86之部分90的一次部分 92上之力F!及一施加至疊置於第二凹部72/第二室88之部分 90的一次部分94上之力F2的一組合。如圖所示,力匕及匕 20皆位於一遠離基材12之方向中。然而,力F〗及F2可位於一 朝向基材12的方向中。並且,力&及可位於相反方向中。 因此,施加至次部分92上之力巧可定義如下:Referring to Figures 4 and 5, more specifically, the pump system is operated to control the pressure/vacuum in one of the fluid chambers 68d, he, and the first chamber of 68n; the pump system 88b is operated. To control one of the pressure/vacuum in the first chamber 86 of the fluid chambers 68a, 68e, 6, 68, and 68s in the phantom; the system is operated to control the fluid chambers 68b, 68f, 68k in row seven. , 68p, and one of his first chambers 8 6 pressure/vacuum; the pump system 8 8 d is operated to control the first chamber 86 of the flow 20 of the body chambers 68c, 68g, 68b 68q, and 68u One of the pressures/vacuum is internal; and the pump system 88e is operated to control one of the pressures/vacuum in the first chamber 86 of the fluid chambers 68h '68m, and 68r in row as. Referring to Figures 4 and 6, the pump system 84a is operative to control one of the pressures/vacuum in the second chamber 88 of the fluid chambers 68a, 68b, and 68c in the column. The pump 14 1352874 system 84b operates to control the column. a pressure/vacuum in the second chamber 88 of the fluid chambers 68d, 68e, 68f, 68g, and 68h in b2; the spring system 8 operates to control the fluid chambers 68i, 68j, 68k, 681 in column b3, and The pressure/vacuum in the second chamber 88 of the crucible; the pump system 84d is operated to control the fluid chambers 5 68n, 68〇, 68p, 68q in the column, and the pressure/vacuum in the second second; The millet system is operated to control one of the first to 88 pressure/vacuum of the fluid chambers 68s, 68t, and 68u in column b5. Referring to Figures 4 through 7, each of the fluid chambers 68 may have one of its associated clamping states or 2) associated with it - non-clamping/arching, depending on the desired application - as follows - Step description. More specifically, the first and the first to 86 and 88 are associated with the first and second recesses 7A and 72, respectively. Therefore, a force applied to a portion of the substrate 12 may be in particular based on one of the areas of the first and second recesses 7 and 72 partially overlapping the substrate 12 and stacked on the substrate 12 portion. The pressure/15 vacuum in the first and second chambers 86 and 88 depends on the magnitude of the pressure. More specifically, for a portion 9 of the substrate 12 stacked in the fluid chamber 68 of the primary group, the force applied to the portion 9 is applied to the first recess 70/first chamber 86. A force F! on the primary portion 92 of the portion 90 and a combination of forces F2 applied to the primary portion 94 of the portion 90 of the second recess 72/second chamber 88. As shown, both the force and the weir 20 are located in a direction away from the substrate 12. However, the forces F and F2 may be in a direction toward the substrate 12. Also, the force & and can be in the opposite direction. Therefore, the force applied to the secondary portion 92 can be defined as follows:

Fi = Αι X p, (1) 其中A,為第一凹部70的面積而匕為與第一室86相關聯 15 1352874 之壓力/真空;且施加至次部分94上之力F2可定義如下: F2 = A2 X P2 (2) 其中A2為第二凹部72的面積而?2為與第二室88相關聯 之壓力/真空。與流體室68相關聯之力F,&F2可共同稱為基 5 材夾盤14施加至基材12上之夾持力Fc。 參照第1及4至6圖,因此,可能想要具有特別依據滴粒 36、基材12、及模具20之間的空間關係而與其有不同狀態 之不同流體室68。第一及第二室86及88的狀態係特別依據 力的方向而定。更確切言之,對於處於一朝向基材 10 12的方向中之力F,,第一室86處於壓力狀態;對於處於一 遠離基材12的方向中之力F,,第一室86處於真空狀態;對 於處於一朝向基材12的方向中之力F2,第二室88處於壓力 狀態;而對於處於一遠離基材12的方向中之力F2,第二室 88處於真空狀態。 15 因此,由於第一及第二室86及88各具有與其相關聯的 兩不同狀態之可能性的緣故,流體室68可具有與其相關聯 的四種組合之一者。下表1顯示第一及第二室86及88内之真 空/壓力的四種組合及所產生的流體室68。 20 表1 組合 第一室86 第二室88 流體室68的狀態 1 真空 真空 夾持 2 真空 壓力 夾持 3 壓力 真空 夾持 4 壓力 壓力 非夾持/弓形 第一及第四組合中,第一及第二室86及88具有與其相 16 1352874 關聯之相同狀態。更確切言之,第一組合中,第一室86係 處於真空狀態而第二室88處於真空狀態,且因此,流體室 68具有與其相關連之一爽持狀態。並且,第四組合中,第 一室86處於壓力狀態而第二室88處於壓力狀態,且因此, 5 流體室68具有與其相關聯之一非夾持/弓形狀態。 第二及第三組合中,第一及第二室86及88具有與其相 關聯之不同狀態。然而,流體室68具有與其相關聯之一夾 持狀態。因此’第一及第二凹部70及72的面積A!&A2之比 值係使得對於與第一及第二室86及88相關連之一給定壓力 10 KP及一給定真空Kv而言,與第一及第二室86及88的真空狀 態相關聯之力F!&F2之一力量值係大於與第一及第二室86 及88的壓力狀態相關聯之留存的力匕及^之一力量值。因 此,上述第二組合中,第一室86係處於真空狀態而第二室 88處於壓力狀態。 15 為了使流體室68處於真空狀態: 1 F, 1 > 1 F2 I (3) 及因此,利用上述等式(1)及(2): | Α,χΚν | > | Α2χΚρ 1 (4) 及因此第一及第二凹部70及72的面積比值分 2〇 別為: Ai/A2> I Kp/Kv 1 (5) 上述第三組合中,第一室86處於壓力狀態而第二室88 處於真空狀態。因此,為了使流體室68處於真空狀態: I F2 I > I F, I (6) 17 1352874 及因此,利用上述等式⑴及⑺: | A2xKv | > I Α,χΚρ I (7) 及因此第一及第一凹部70及72的面積A!及A〗之比值分 別為: 5 A,/A2< I Kv/Kp I (8) 因此,顯然為了當第一及第二室86及88處於不同狀態 時使流體室68具有與其相關聯之一真空狀態,第一及第二 凹部70及72的面積八丨及八2可分別定義如下: I Kp/Kv I <Aj/A2< I Ky/Kp I (9) 10 一範例中,KP可近似為40kPa而Kv可近似為-80kPa, 及因此八丨對八2之比值可定義如下: 〇.5<A,/A2<2 (1〇) 尚且,處於非夾持/弓形狀態之一流體室68内的一壓力 量值係可改變。更確切言之,以記憶體58中所儲存的一電 15腦可讀取程式操作之處理器5 6係由於與泵系統8 2及8 4電性 導通故可分別經由泵系統82及88來改變第一及第二室86及 88内之一壓力量值。 參照第1至3圖,如上述,模具2〇與基材12之間的一距 離受到改變藉以在其間界定一被聚合材料34充填之所想要 20容積。尚且,固體化之後,聚合材料34係符合基材12的表 面46及圖案化表面22之形狀,而界定基材12上之圖案化層 48。因此,基質陣列38的滴粒36之間所界定之—容積96中, 出現有氣體。氣體及/或氣體囊可為包括但不限於空氣、 氮、二氧化碳 '及氦之此等氣體。基材12與模具2〇之間的 18 1352874 =特別導因於複數個基材12及模具20。因此可能相 5 10 材12二ίΓ模具2G的充填時間。充填時間特別依據基 1材;=及圖案化層48内的氣體及/或氣體囊自 擴散H U2G之間排空及/或溶解至聚合材料34中及/或 擴政至聚合材料34内所需要之時間而定。因此,下文描述 一用以防止或盡量減少氣體困陷於模具2G與基材12間之方 法及系統。 參照第1及8圖,顯示-用以驅排基材12及模具2〇之間 氣體^方法。更確切言之,在步驟卿,如上述聚合材料 34可藉由滴落8&送、旋塗、㈣、化學氣相沉積(cvd卜物 理氣相沉積(PVD)、薄膜沉積、厚膜沉積及類似方式被定位 在基材12上。一進一步實施例中’聚合材料34可被定位在 模具20上。 參照第5、6、8及9圖’在步驟1〇2,可更改基材12的一 15形狀使得基材12的一中心次部分處之模具20與基材12間所 界定的一距離山小於基材12其餘部分處之模具2〇與基材12 之間所界定的一距離。一範例中,距離山小於具有4,距離 d2被界定於基材12的一邊緣處。一進一步實施例中,距離 叱可被界定於基材12之任何所想要位置處。可藉由控制複 20 數個流體室68的一壓力/真空來更改基材12的形狀。更確切 言之,與基材12的一部分98疊置之流體室68係處於一非夾 持/弓形狀態以使基材12的部分98弓起朝向模具20及遠離 基材夾盤14。並且,與處於非夾持/弓形狀態之基材12的一 部分98疊置之流體室68呈現同時地’與基材12的一部分99 19 1352874 疊置之其餘流體室68係處於一夾持狀態以將基材12扣持在 基材夾盤14上。 參照第7、10、及11圖,在步驟1〇4,如上文對於第1圖 所述,第1圖所示的壓印頭30、階台16、或兩者係可改變距 5離山,如第9圖所示,使得模具20的一次部分接觸滴粒%的 —次部分。如圖所示,在模具20的其餘部分接觸滴粒托的 其餘滴粒之前,模具20的一中心次部分係接觸滴粒%的— 次部分。然而,一進一步實施例中,模具2〇的任何部分係 可在模具20的其餘部分之前接觸滴粒36。因此,如圖所示, 1〇模具20係實質同時地接觸與行Ο相關聯之所有滴粒36,如 第2圖所示。這造成滴粒36分散且產生聚合材料34的鄰接液 體片120。液體片120的邊緣122a及122b係分別界定可用來 將容積96中的氣體推往邊緣128a、128b、128c、及I28d之 液體-氣體介面124a及124b »行crC5中的滴粒36之容積96係 15 界定可供氣體通過被推往邊緣128a、128b、128c、及128d 之氣體通道。結果,液體-氣體介面124a及124b連同氣體通 道係防止或減少氣體困陷於液體片120中。 參照第4至6及8圖,在步驟106,可隨著距離山進一步 降低來進一步更改基材12的形狀,使得模具20與基材12間 20 所界定的所想要容積可被聚合材料34充填,如上文參照第1 圖所述。更確切言之,基材12的形狀可經由流體室68連同 經由壓印頭30、階台16、或兩者的減小距離山而被更改。 更確切言之,如上述,與基材12的部分98疊置之流體室68 的第一及第二室86及88内之壓力量值係可改變,如第9圖所 20 1352874 示。因此,隨著第9圖所示之距離山減小,與基材12的部分 98疊置之流體室68的第一及第二室86及88内之壓力量值可 減小’如第9圖所示。由於第9圖所示的減小距離山及第9圖 所示之基材12的部分98疊置之流體室68的第一及第二室86 5 及88中的上述壓力減小之緣故,如第2圖所示與行(^及以中 的滴粒36相關聯之聚合材料34係分散以變成被包括在鄰接 流體片120中’如第12圖所示。第9圖所示的距離山可連同 與第9圖所示基材12的部分98疊置之流體室68的第一及第 二室86及88内之壓力量值降低而被進一步減小,使得模具 10 20隨後變成接觸於與行❶丨及以相關聯之滴粒36故令與其相 關聯的聚合材料34分散以變成被包括在鄰接片12〇中,如第 13圖所示。一進一步實施例中,與基材12的部分98疊置之 流體室68的第一及第二室86及88内之壓力係可降低以使基 材12的部分98被定位在基材夾盤14上,如第14圖所示。另 15 一進一步實施例中’與基材12的部分98疊置之流體室68的 第一及第二室86及88中可在滴粒36分散之後具有一真空。 參照第8及13圖,可看出’介面124a及124b已經分別移 往邊緣128c及128a ’故對於其餘容積96中的氣體具有一未 受阻路徑可供移行,如第11圖所示。這可容許第U圖所示 20的容積96中之氣體自模具20與基材12之間相對於邊緣 128a、128b、128c、及128d外出。利用此方式,可防止或 盡量減少氣體及/或氣囊困陷於基材12與模具2〇之間及圖 案化層48内,如第3圖所示。 參照第1及8圖’在步驟108,如上文參照第1圖所述, 21 聚0材料34可隨後被固體化及/或交聯,而界定圖案狀層 48,如第3圖所示。隨後在步驟u〇,模具2〇可自圖案狀層 48分離。 參照第1、8及15圖,如上述,基材12的形狀可沿第一 方向被更改。然而,—進—步實施例中,基材12的形狀可 在第—及第二方向同時被更改,其中第二方向正交於第一 方向L伸。更確切言之,基材12可被更改使得基材12的一 中人邛刀接觸到模具20,且因此滴粒36的一申心次部分 在滴粒36的其餘滴粒接觸模具30之前即接觸到模具2〇,如 上文參照第10圖所述。這造成滴粒36分散且產生聚合材料 34的鄰接液體片12G’而界定可用來將容積96中的氣體徑向 4卜推之液體-氧體介面124。一範例中,液體片12〇可具有 液體·氣體介面124的-圓形或類圓形擴張以將容積%中的 氣體杈向地往外推往邊緣128a、128b、128c、及I28d。然 而,一進一步實施例中,基材12的形狀可在任何方向中更 改以產生便利將容積96中的氣體徑向往外推往邊緣KM、 128b 128c、及128d所想要之任何幾何形狀亦即球形、圓 柱形等的液體片120以防止或盡量減小氣體及/或氣體囊困 Po於基材12與模具12〇之間及圖案化層48内,如第3圖所 示。一進一步實施例中,第一及第二室86及88之一次組的 列及行中係可分別不生成壓力/真空。 參照第16圆,一進一步實施例中,基材夾盤14可進一 步用來便利模具20與位於基材12上的圖案狀層48之間的分 離更確切。之,藉由將一分離力Fs施加至模板18及模具 1352874 2〇來達成模具20自圖案狀層48之分離。分離力Fs係具有足 以克服模具20與圖案狀層48之間黏著力及基材12對於應變 (變形)的阻力之量值。相信基材12—部分之變形係便利於模 具20自圖案狀層48之分離。因此,可能想要盡量減低分離 5力匕的量值以達成模具20自圖案狀層48之分離。盡量減小 分離力F s量值係特別可便利於模具2 0與基材12之間的對 準’增大模板圖案化面積vs.總模板面積的一比值,及盡量 降低模板18、模具20、基材12、及圖案狀層48的結構性妥 協之機率。 10 因此,如上述,流體室68内之一壓力量值可改變,因 此,如上述,在模具2〇自圖案狀層48分離期間,與基材12 的一部分13疊置之流體室68可處於非夾持/弓形狀態。結 果,與基材12的部分13疊置之流體室68係可在實質與分離 力匕方向相同之方向中如第7圖所示施加夾持力Fc、力匕及 6。結果,使模具20自圖案狀層48分離所需要之分離力& 的量值可降低。更確切言之,建立了與基材^的部分叫 置之夾持力FC量值以便利基材12的部分13回應於分離力= 之應變(變形)。應注意與基材12的部分13疊置之夾持力h 2篁值係可具有使位於部分13外側之基材12部分在其受到分 離力Fs時被扣持於基材夾盤14上之所想要的任何數值。 參照第1圖,另-進一步實施例中,上述經由基材夹盤 W使基材12f折之方法可類似地施用至模板18/模具2〇。更 確切言之’模板18/模具20可以上文對於基材12所述實質相 同之方法被定位在基材失盤u上以便利其彎折。因此,模 23 板18/模具20可具有lrnm的厚度以便利其彎折。另一進—步 實施例中,可對於基材夾盤14以添加或取代方式利用複數 個致動器來更改基材12。 上述本發明的實施例係為示範性。可對於上述揭示作 5出許多改變及修改,而仍位於本發明的範圍内。因此,本 發明的範圍不應受限於上文描述,而是應參照申請專利範 圍及其均等物的完整範圍來決定。 【圖式簡單說明】 第1圖為-具有與一基材分開的一模具之微影系統的 10簡化側視圖,該基材位於一基材炎盤上; 第2圖為顯示位於第丨圖所示基材的—區上之壓印材料 滴粒的一陣列之俯視圖; 第3圖為第1圖所示基材之簡化側視圖,其具有—位於 其上之圖案狀層; 15 第4圖為第1圖所示的基材夾盤之側視圖; 第5圖為第1圖所示的基材夾盤之俯視圖,其顯示與基 材夾盤的複數個流體室呈流體導通之泵系統的複數個行; 第6圖為第1圖所示的基材夾盤之俯視圖,其顯示與基 材的複數個流體室呈流體導通之泵系統的複數個列; 20 第7圖為兩者皆顯示於第1圖中的基材及基材夾盤之一 部分的分解圖; 第8圖為顯示一用以圖案化第!圖所示基材的一區之方 法之流程圖; 第9圖為第1圖所示基材及模具之側視圖,其中基材形 24 1352874 狀被更改; 第10圖為第9圖所示基材及模具之側視圖,模具係接觸 於第2圖的壓印材料滴粒之一部分; 第11至13圖為顯示第2圖所示滴粒的壓縮之俯視圖,其 5 採用第9圖所示基材的經更改形狀; 第14圖為第10圖所示基材及模具之側視圖,基材被定 位於基材夾盤上; 第15圖為顯示第2圖中滴粒的壓縮之俯視圖,其在一進 一步實施例中採用第10圖所示基材之經更改形狀;及 10 第16圖為第1圖所示的基材及模具之側視圖,模具自基 材部分地分離。Fi = Αι X p, (1) where A is the area of the first recess 70 and 匕 is the pressure/vacuum associated with the first chamber 86 15 1352874; and the force F2 applied to the secondary portion 94 can be defined as follows: F2 = A2 X P2 (2) where A2 is the area of the second recess 72? 2 is the pressure/vacuum associated with the second chamber 88. The forces F, & F2 associated with the fluid chamber 68 may be collectively referred to as the clamping force Fc applied to the substrate 12 by the substrate chuck 14. Referring to Figures 1 and 4 to 6, it is therefore possible to have a different fluid chamber 68 having a different state depending on the spatial relationship between the droplets 36, the substrate 12, and the mold 20. The state of the first and second chambers 86 and 88 depends in particular on the direction of the force. More specifically, for a force F in a direction toward the substrate 10 12, the first chamber 86 is in a pressurized state; for a force F in a direction away from the substrate 12, the first chamber 86 is in a vacuum State; for a force F2 in a direction toward the substrate 12, the second chamber 88 is in a pressurized state; and for a force F2 in a direction away from the substrate 12, the second chamber 88 is in a vacuum state. Thus, fluid chamber 68 may have one of four combinations associated therewith, as first and second chambers 86 and 88 each have the possibility of two different states associated therewith. Table 1 below shows the four combinations of vacuum/pressure in the first and second chambers 86 and 88 and the resulting fluid chamber 68. 20 Table 1 Combination first chamber 86 second chamber 88 fluid chamber 68 state 1 vacuum vacuum clamping 2 vacuum pressure clamping 3 pressure vacuum clamping 4 pressure pressure non-clamping / bowing first and fourth combination, first And the second chambers 86 and 88 have the same state associated with their phase 16 1352874. More specifically, in the first combination, the first chamber 86 is in a vacuum state and the second chamber 88 is in a vacuum state, and therefore, the fluid chamber 68 has a cool state associated therewith. Also, in the fourth combination, the first chamber 86 is in a pressurized state and the second chamber 88 is in a pressurized state, and therefore, the 5 fluid chamber 68 has a non-clamping/arcing state associated therewith. In the second and third combinations, the first and second chambers 86 and 88 have different states associated therewith. However, fluid chamber 68 has a clamped state associated therewith. Thus, the ratio of the area A! & A2 of the first and second recesses 70 and 72 is such that for a given pressure of 10 KP and a given vacuum Kv associated with the first and second chambers 86 and 88 The force value of one of the forces F! & F2 associated with the vacuum states of the first and second chambers 86 and 88 is greater than the retained force associated with the pressure states of the first and second chambers 86 and 88 and ^ One of the strength values. Therefore, in the second combination described above, the first chamber 86 is in a vacuum state and the second chamber 88 is in a pressurized state. 15 In order to bring the fluid chamber 68 into a vacuum state: 1 F, 1 > 1 F2 I (3) and thus, using the above equations (1) and (2): | Α, χΚν | > | Α2χΚρ 1 (4) And thus the area ratio of the first and second recesses 70 and 72 is divided into two: Ai/A2> I Kp/Kv 1 (5) In the third combination described above, the first chamber 86 is in a pressure state and the second chamber 88 In a vacuum state. Therefore, in order to bring the fluid chamber 68 into a vacuum state: I F2 I > IF, I (6) 17 1352874 and, therefore, using the above equations (1) and (7): | A2xKv | > I Α, χΚρ I (7) and thus The ratios of the areas A! and A of the first and first recesses 70 and 72 are: 5 A, /A2 < I Kv / Kp I (8) Therefore, it is apparent that when the first and second chambers 86 and 88 are The fluid chamber 68 has a vacuum state associated with it in different states, and the areas of the first and second recesses 70 and 72, eight and eight, can be defined as follows: I Kp / Kv I < Aj / A2 < I Ky /Kp I (9) 10 In one example, KP can be approximated to 40 kPa and Kv can be approximated to -80 kPa, and thus the ratio of gossip to 八 2 can be defined as follows: 〇.5 <A, /A2<2 (1〇 Still, a magnitude of pressure within one of the fluid chambers 68 in the non-clamped/arched state can vary. More specifically, the processor 56, which is operated by an electric 15 brain readable program stored in the memory 58, is electrically connected to the pump systems 8 2 and 8 4 and can be respectively connected via the pump systems 82 and 88. The pressure magnitude of one of the first and second chambers 86 and 88 is varied. Referring to Figures 1 through 3, as described above, a distance between the mold 2 and the substrate 12 is varied to define a desired volume of 20 filled with the polymeric material 34 therebetween. Still, after solidification, the polymeric material 34 conforms to the shape of the surface 46 of the substrate 12 and the patterned surface 22 to define the patterned layer 48 on the substrate 12. Thus, in the volume 96 defined between the droplets 36 of the matrix array 38, a gas is present. The gas and/or gas capsules may be such gases as, but not limited to, air, nitrogen, carbon dioxide, and helium. 18 1352874 between the substrate 12 and the mold 2 is specifically due to the plurality of substrates 12 and the mold 20. Therefore, it is possible to fill the time of the 2G material 12 2 Γ Γ 2G. The filling time is particularly dependent on the base material; = and the gas and/or gas capsules in the patterned layer 48 are evacuated and/or dissolved into the polymeric material 34 from the diffusion H U2G and/or expanded into the polymeric material 34. It depends on the time required. Accordingly, a method and system for preventing or minimizing gas trapping between the mold 2G and the substrate 12 will be described below. Referring to Figures 1 and 8, there is shown a method for driving a gas between the substrate 12 and the mold 2〇. More specifically, in the step, as described above, the polymeric material 34 can be dropped by 8 & spin, spin coating, (iv), chemical vapor deposition (cvd physical vapor deposition (PVD), thin film deposition, thick film deposition and A similar manner is positioned on the substrate 12. In a further embodiment, the 'polymeric material 34 can be positioned on the mold 20. Referring to Figures 5, 6, 8 and 9', in step 1〇2, the substrate 12 can be modified. The shape of a 15 is such that a distance defined between the mold 20 and the substrate 12 at a central portion of the substrate 12 is less than a distance defined between the mold 2 and the substrate 12 at the remainder of the substrate 12. In one example, the distance mountain is less than 4 and the distance d2 is defined at an edge of the substrate 12. In a further embodiment, the distance 叱 can be defined at any desired location of the substrate 12. A pressure/vacuum of a plurality of fluid chambers 68 is applied to modify the shape of the substrate 12. More specifically, the fluid chamber 68 overlying a portion 98 of the substrate 12 is in a non-clamping/bow state to The portion 98 of the material 12 is arched toward the mold 20 and away from the substrate chuck 14. The fluid chamber 68 in which a portion 98 of the substrate 12 in the holding/arching state is stacked presents the remaining fluid chamber 68 that is simultaneously stacked with a portion 99 19 1352874 of the substrate 12 in a clamped state to hold the substrate 12 On the substrate chuck 14. Referring to Figures 7, 10, and 11, in step 1 〇 4, as described above for Figure 1, the embossing head 30, the stage 16, or both shown in Figure 1 The system can be changed from 5 to the mountain, as shown in Fig. 9, so that the primary portion of the mold 20 contacts the % portion of the drop. As shown, before the rest of the mold 20 contacts the remaining drops of the drop holder A central portion of the mold 20 is in contact with the % portion of the drop. However, in a further embodiment, any portion of the mold 2 can contact the drop 36 prior to the remainder of the mold 20. Thus, As shown, the 1 〇 mold 20 is substantially simultaneously in contact with all of the granules 36 associated with the raft, as shown in Figure 2. This causes the granules 36 to disperse and create an adjacent liquid sheet 120 of polymeric material 34. The liquid sheet 120 The edges 122a and 122b are respectively defined to be used to push the gas in the volume 96 to the edge 128a, The liquid-gas interfaces 124a and 124b of 128b, 128c, and I28d » The volume 96 of the droplets 36 in the line crC5 96 defines a gas passage through which gas can be pushed toward the edges 128a, 128b, 128c, and 128d. The liquid-gas interfaces 124a and 124b together with the gas channel prevent or reduce gas trapping in the liquid sheet 120. Referring to Figures 4 through 6 and 8, at step 106, the shape of the substrate 12 can be further modified as the distance is further reduced. The desired volume defined between the mold 20 and the substrate 12 can be filled with the polymeric material 34, as described above with reference to Figure 1. More specifically, the shape of the substrate 12 can be altered via the fluid chamber 68 along with a reduced distance mountain via the embossing head 30, the stage 16, or both. More specifically, as described above, the amount of pressure in the first and second chambers 86 and 88 of the fluid chamber 68 overlapping the portion 98 of the substrate 12 can be varied, as shown in Fig. 9 at 20 1352874. Therefore, as the distance mountain shown in FIG. 9 is reduced, the amount of pressure in the first and second chambers 86 and 88 of the fluid chamber 68 overlapping the portion 98 of the substrate 12 can be reduced as '9th The figure shows. The pressure reduction in the first and second chambers 86 5 and 88 of the fluid chamber 68 in which the distance reduction mountain and the portion 98 of the substrate 12 shown in FIG. 9 are overlapped is shown in FIG. As shown in Fig. 2, the polymeric material 34 associated with the rows (and the droplets 36 in the middle are dispersed to become included in the adjacent fluid sheet 120) as shown in Fig. 12. The distance shown in Fig. 9. The mountain may be further reduced in conjunction with a decrease in the amount of pressure in the first and second chambers 86 and 88 of the fluid chamber 68 overlying the portion 98 of the substrate 12 shown in Figure 9, such that the mold 10 20 subsequently becomes contacted. The polymeric material 34 associated therewith is dispersed in association with the crucible 36 and associated with the droplets 36 to become included in the adjacent sheet 12, as shown in Figure 13. In a further embodiment, with the substrate The pressure within the first and second chambers 86 and 88 of the portion 98 of the stacked fluid chamber 68 can be lowered such that the portion 98 of the substrate 12 is positioned on the substrate chuck 14, as shown in FIG. In a further embodiment, the first and second chambers 86 and 88 of the fluid chamber 68 overlapping the portion 98 of the substrate 12 may have after the droplets 36 are dispersed. Referring to Figures 8 and 13, it can be seen that 'the interfaces 124a and 124b have been moved to the edges 128c and 128a, respectively, so that there is an unobstructed path for the gas in the remaining volume 96 to be moved, as shown in Figure 11 This allows the gas in the volume 96 of the 20 shown in Figure U to exit from the mold 20 and the substrate 12 relative to the edges 128a, 128b, 128c, and 128d. In this manner, gas and/or gas can be prevented or minimized. Or the airbag is trapped between the substrate 12 and the mold 2 and in the patterned layer 48, as shown in Fig. 3. Referring to Figures 1 and 8 'in step 108, as described above with reference to Fig. 1, 21 poly 0 Material 34 can then be solidified and/or crosslinked to define patterned layer 48, as shown in Figure 3. Subsequent to step u, mold 2 can be separated from patterned layer 48. Referring to Figures 1, 8 and 15, as described above, the shape of the substrate 12 can be modified in the first direction. However, in the embodiment, the shape of the substrate 12 can be simultaneously changed in the first and second directions, wherein the second direction Orthogonal to the first direction L. More specifically, the substrate 12 can be modified such that one of the substrates 12 Contacting the mold 20, and thus a core portion of the droplets 36 contacts the mold 2 before the remaining droplets of the droplets 36 contact the mold 30, as described above with reference to Figure 10. This causes the droplets 36 to be dispersed. And the liquid sheet 12G' of the polymeric material 34 is created to define a liquid-oxygen interface 124 that can be used to radially push the gas in the volume 96. In one example, the liquid sheet 12 can have a liquid/gas interface 124 A circular or circular expansion to push the gas in volume % outwardly toward the edges 128a, 128b, 128c, and I28d. However, in a further embodiment, the shape of the substrate 12 can be modified in any direction to produce any geometry desired to facilitate the radially outward movement of the gas in the volume 96 toward the edges KM, 128b 128c, and 128d. The liquid sheet 120 of a spherical shape, a cylindrical shape or the like prevents or minimizes the gas and/or gas capsule trapping Po between the substrate 12 and the mold 12 and in the patterned layer 48, as shown in FIG. In a further embodiment, the columns and rows of the first and second chambers 86 and 88 may each generate no pressure/vacuum. Referring to the 16th circle, in a further embodiment, the substrate chuck 14 can be further utilized to facilitate the separation between the mold 20 and the patterned layer 48 on the substrate 12. The separation of the mold 20 from the patterned layer 48 is achieved by applying a separation force Fs to the template 18 and the mold 1352874 2〇. The separating force Fs has a magnitude sufficient to overcome the adhesion between the mold 20 and the patterned layer 48 and the resistance of the substrate 12 to strain (deformation). It is believed that the deformation of the substrate 12-portion facilitates the separation of the mold 20 from the patterned layer 48. Therefore, it may be desirable to minimize the magnitude of the separation force to achieve separation of the mold 20 from the patterned layer 48. Minimizing the separation force F s value is particularly convenient for the alignment between the mold 20 and the substrate 12 to increase the ratio of the template patterned area vs. the total template area, and to minimize the template 18, the mold 20 The probability of structural compromise of the substrate 12 and the patterned layer 48. Thus, as described above, one of the pressure magnitudes within the fluid chamber 68 can be varied so that, as described above, during the separation of the mold 2 from the patterned layer 48, the fluid chamber 68 overlapping the portion 13 of the substrate 12 can be Non-clamping/arc state. As a result, the fluid chamber 68 which is overlapped with the portion 13 of the substrate 12 can apply the clamping force Fc, force 匕 and 6 as shown in Fig. 7 in the direction substantially the same as the separation force 匕 direction. As a result, the amount of separation force & required to separate the mold 20 from the patterned layer 48 can be reduced. More specifically, the amount of the gripping force FC of the portion of the substrate is established to facilitate the portion 13 of the substrate 12 in response to the strain (deformation) of the separation force =. It should be noted that the clamping force h 2 叠 overlapping with the portion 13 of the substrate 12 may have the portion of the substrate 12 located outside the portion 13 held on the substrate chuck 14 when it is subjected to the separation force Fs. Any value you want. Referring to Figure 1, in a further embodiment, the above method of folding the substrate 12f via the substrate chuck W can be similarly applied to the template 18/mold 2〇. More specifically, the template 18/mold 20 can be positioned on the substrate loss plate u in a manner substantially the same as described above for the substrate 12 to facilitate its bending. Therefore, the mold 23 plate 18 / mold 20 can have a thickness of lrnm to facilitate its bending. In another embodiment, a plurality of actuators can be utilized to modify substrate 12 in a manner that is additive or otherwise substituted for substrate chuck 14. The above described embodiments of the invention are exemplary. Many changes and modifications may be made to the above disclosure without departing from the scope of the invention. Therefore, the scope of the invention should not be limited by the above description, but should be determined by reference to the full scope of the claims and the equivalents thereof. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a simplified side view of a lithography system having a mold separate from a substrate, the substrate being placed on a substrate slab; Figure 2 is a stencil view A top view of an array of embossed material droplets on the region of the substrate shown; Figure 3 is a simplified side view of the substrate shown in Figure 1, having a patterned layer thereon; Figure 1 is a side view of the substrate chuck shown in Figure 1; Figure 5 is a top plan view of the substrate chuck shown in Figure 1, showing the pump in fluid communication with the plurality of fluid chambers of the substrate chuck a plurality of rows of the system; Figure 6 is a top plan view of the substrate chuck shown in Figure 1, showing a plurality of columns of pump systems in fluid communication with a plurality of fluid chambers of the substrate; 20 Figure 7 is two The exploded view of one part of the substrate and the substrate chuck shown in Fig. 1; Fig. 8 shows the pattern used for patterning! A flow chart of a method for forming a region of a substrate; Fig. 9 is a side view of the substrate and the mold shown in Fig. 1, wherein the substrate shape 24 1352874 is modified; FIG. 10 is a view of FIG. a side view of the substrate and the mold, the mold is in contact with one of the embossing material droplets of Fig. 2; and the 11th to 13th are top views showing the compression of the granules shown in Fig. 2, wherein 5 is taken in Fig. 9 The modified shape of the substrate is shown; Figure 14 is a side view of the substrate and the mold shown in Figure 10, the substrate is positioned on the substrate chuck; Figure 15 is a view showing the compression of the droplets in Figure 2 In a top view, in a further embodiment, the modified shape of the substrate shown in Fig. 10 is used; and 10 is a side view of the substrate and the mold shown in Fig. 1, the mold being partially separated from the substrate.

【主要元件符號說明】 10…系統 32…流體配送系統 12…紐 34…聚合材料 14…基材夾盤 36…滴粒 16…階台 38…基質陣列 18…模板 40…能量供源 20…台面,奈米壓印模具 42…直接能量 22…圖案化表面 44…路徑 24,54···凹部 46…基材表面 26,52…突部 48…圖案化層 28···模板夾盤 50…殘留層 30…壓印頭 56…處理器 25 1352874[Main component symbol description] 10...System 32...Fluid distribution system 12...New 34...Polymer material 14...Substrate chuck 36...Drops 16...Step 38...Substrate array 18...Template 40...Energy supply source 20... Countertop , nanoimprinting mold 42...direct energy 22...patterned surface 44...path 24,54···recess 46...substrate surface 26,52...projection 48...patterned layer 28···template chuck 50... Residual layer 30...imprint head 56...processor 25 1352874

58…記憶體 60…夾盤體部 62…第一表面,第一側 64…第二側 66…側或邊緣表面 68,68a~68u…流體室 70…第一凹部 72…第二凹部 74···支樓區 76…第二支撑區 78,78a,78b,78c,78d,78e,80,80a,80b, SOcjOd^Oe…通路 82a,82b,82c,82d,82e,84,84a,84b,84c, 84^84^8813,88(:,88^88^泵系統 86…第一室 88…第二室 90…疊置於一次組的流體室之基 材的部分 92,94…次部分 96…基質陣列的滴粒之間所界定 之容積 98,99…基材的部分 100,102,104,106,108,110...^ Π0…液體片 122aJ22b…液體片的邊緣 124a424b…液體·氣體介面 128a,128b,128c,128d···^ ara5,c丨~c5…行 Ar · ·第一凹部70的面積 Α2…第二凹部72的面積 1?1七5,1*1-犷5...歹 lj di,d2…距離58...memory 60...chuck body 62...first surface, first side 64...second side 66... side or edge surface 68, 68a-68u...fluid chamber 70...first recess 72...second recess 74· · The branch area 76...the second support area 78,78a,78b,78c,78d,78e,80,80a,80b, SOcjOd^Oe...the passages 82a, 82b, 82c, 82d, 82e, 84, 84a, 84b, 84c, 84^84^8813, 88 (:, 88^88^ pump system 86... first chamber 88... second chamber 90... part 92, 94...sub-portion 96 of the substrate stacked in the fluid chamber of the primary group ...the volume defined by the droplets of the matrix array 98,99...the portion of the substrate 100,102,104,106,108,110...^0...the liquid sheet 122aJ22b...the edge of the liquid sheet 124a424b...the liquid·gas interface 128a,128b,128c,128d·· ·^ ara5,c丨~c5...row Ar · The area of the first recess 70 Α2...the area of the second recess 72 1?1 7 5,1*1-犷5...歹lj di,d2...distance

Fi · · ·施加至次部分92上之力 F2· ··施*加至次部分94上之力 Fc…失持力 Fs·..分離力 Kp…給定壓力 Κν…給定真空Fi · · · Force applied to the secondary portion 92 F2 · · · Force applied to the secondary portion 94 Fc... Loss of force Fs ·.. Separation force Kp... Given pressure Κν... Given vacuum

Pr · ·與第一室86相關聯之壓力/真空 Pr · ·與第二室88相關聯之麼力/真空 26Pr · Pressure/vacuum associated with the first chamber 86 Pr. · Force/vacuum associated with the second chamber 88 26

Claims (1)

13528741352874 第96111034號專利申請案申請專利範圍修正本日期:100年7月十、申請專利範圍:Patent Application No. 9611034 Application for Amendment of Patent Scope This date: July 10, 100, the scope of application for patents: r5年。]月<?日修正本| 1. 一種央持系統,係用以固持一基材之一第一部分並且同 時弓彎該基材之一第二部分,該系統包含··一夾盤體 部,其具有第一及第二相對側,該第一側係包括配置於 5 列與行中之一流體室陣列,該流體室陣列包括一與該基 材之第一部分疊置的第一流體室及一與該基材之第二 部分疊置的第二流體室,各個流體室包含用以界定第一 及第二分開的支撐區之第一及第二分開的凹部,其中該 第一支撐區係環繞該第二支撐區及該等第一及第二凹 10 部,而該第二支撐區環繞該第二凹部,其中該基材休止 抵住D亥專第一及第一支樓區,以致於該第一凹部及與其 疊置之該基材的一部分係界定一第一室而該第二凹部 及與其疊置之該基材的一部分界定一第二室,其中該等 15 第—室的每一者及該等第二室的每一者係與一不同流 5 冑供源至流體導通以控制該流體室陣列中之流體的流 • 動’該第-流體室的第一室呈一真空狀態’且其中該第 仙·體室之第二室以及該第二流體室之第一室及第二 室呈一壓力狀態。 2〇 2.二申請專利範圍第i項之夾持系統,其中該等流體室的 仃中之各第-室係與一共同流體供源呈流體導通。 . .Μ請專職圍第1項之㈣㈣,其中該等流體室的 • 4 β中之各第二室係與—共同流體供源呈流體導通。 • ^申請專利範圍第!項之夾持系統,其中該等流體室的 行中之各第室係與—第—共同流體供源呈流體導 27 1352874 第96111034號專利申請案申請專利範圍修正本日期:100年7月 通且其中該等流體室的一列中之各第二室係與一不同 於該第一共同流體供源之第二共同流體供源呈流體導 通0R5 years. ] month<? day revision | 1. A central holding system for holding a first portion of a substrate and simultaneously bending a second portion of the substrate, the system comprising a chuck body Having a first and a second opposing side, the first side comprising an array of fluid chambers disposed in five rows and rows, the fluid chamber array including a first fluid chamber overlapping the first portion of the substrate And a second fluid chamber overlapping the second portion of the substrate, each fluid chamber including first and second separate recesses defining first and second separate support regions, wherein the first support region Surrounding the second support area and the first and second recesses 10, and the second support area surrounds the second recess, wherein the substrate rests against the first and first branch areas of D Hai. The first recess and a portion of the substrate superposed therewith define a first chamber and the second recess and a portion of the substrate superposed thereon define a second chamber, wherein the 15th chamber Each of the second chambers and each of the second chambers are connected to a fluid flow with a different flow Controlling the flow of fluid in the array of fluid chambers, the first chamber of the first fluid chamber is in a vacuum state, and wherein the second chamber of the first body chamber and the first chamber of the second fluid chamber And the second chamber is in a state of pressure. 2 〇 2. The clamping system of claim i, wherein each of the first chambers of the fluid chambers is in fluid communication with a common fluid supply. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • ^ Patent application scope! The clamping system of the item, wherein each of the first chambers in the row of the fluid chambers and the first common fluid source is a fluid guide 27 1352874 Patent Application No. 96110034 Patent Application Revision Date: 100 years July And wherein each of the second chambers in one of the fluid chambers is in fluid communication with a second common fluid supply source different from the first common fluid supply source. 10 1510 15 20 5. 如申請專利範圍第1項之夾持系統,其中該流體室陣列 中之一流體室係相對於該流體室陣列之其餘流體室呈 密封。 6. 如申請專利範圍第1項之夾持系統,進一步包括複數個 通路,其中該等第一室的各行及該等第二室的各列係被 耦合至不同通路以將該等第一及第二室放置成與該等 不同流體供源呈流體導通。 7. —種夾持系統,係用以固持一基材之一第一部分並且同 時弓彎該基材之一第二部分,該系統包含··一夾盤體 部,其具有第一及第二相對側,該第一側係包括一流體 室陣列,該流體室陣列包括一第一流體室及一第二流體 室,各流體室包含用以界定第一及第二分開的支撐區之 第一及第二分開的凹部,其中該第一支撐區係環繞該第 二支撐區及該等第一及第二凹部,而該第二支撐區環繞 該第二凹部,其中該基材休止抵住該等第一及第二支撐 區,以致於該第一凹部及與其疊置之該基材的一部分係 界定一第一室而該第二凹部及與其疊置之該基材的一 部分界定一第二室;及一壓力控制系統,其與該第一流 體室及該第二流體室呈流體導通,該壓力控制系統與該 第一流體室及該第二流體室之該等第一及第二室的每 一者呈流體導通,以控制該等第一及第二室内之一壓 28 1352874 第9611·號專利申請案申請專利範圍修正本日期溯年7月 力’使得該第-流體室之該等第_及第二室内具有一正 壓力且該第二流體室之該等第一及第二室内具有一負 壓力,其t為了該第-流體室之該㈣—及第二室内之 給疋正壓力及該第二流體室之該等第__及第二室内 之-負壓力’該等第-及第二凹部之間的_面積之一比 2係為可使得該第—流體室將—負力施加至與該流體 至疊置之該基材的一部分上者。 8. 如申請專利範圍第7項之夾持系統,進-步包括配置於 列與行_之複數個流體室。 10 9. 如申請專利ϋ圍第7項之夹持系統,進—步包括一第一 及第二通路以分別將該等第一及第二室放置成與該麼 力控制系統呈流體導通。 15 1〇·如申請專利範圍第7項之夹持系統,其中該壓力控制系 =包含複數個流體供源,其中該等第_室的各行及該 第—室的各列係與該複數個流體供源之一不同流體 供源呈流體導通以控制該流體室陣列中之流體的流動。 =請專利範㈣1G項之夹«統,其中該等流體室的 12如Γ中之各第—室係與"'共同流體供源呈流體導通。 20 申請專利範圍第H)項之夹持系統,其中該等流體室的 13如Γ中之各第二室係與—共同流體供源呈流體導通。 利範圍第1〇項之夹持系統,其中該等流體室的 仃中之各第一室係與—第—妓 通且其令該等流體室的1中豆供源呈流體導 於該第一共同流體供源之第_共^—室係與—不同 弟—共问流體供源呈流體導 29 1352874 第96111034號專利申請案申請專利範圍修正本曰期:100年7月 通。 14.如申請專利範圍第10項之夾持系統,其中該流體室陣列 之一流體室係相對於該流體室陣列之其餘流體室呈密The gripping system of claim 1, wherein one of the fluid chamber arrays is sealed relative to the remaining fluid chambers of the fluid chamber array. 6. The clamping system of claim 1, further comprising a plurality of passages, wherein each of the rows of the first chambers and the columns of the second chambers are coupled to different passages to The second chamber is placed in fluid communication with the different fluid sources. 7. A clamping system for holding a first portion of a substrate and simultaneously bending a second portion of the substrate, the system comprising a chuck body having first and second portions On the opposite side, the first side system includes an array of fluid chambers, the fluid chamber array includes a first fluid chamber and a second fluid chamber, each fluid chamber including a first to define first and second separate support regions And a second separate recess, wherein the first support region surrounds the second support region and the first and second recesses, and the second support region surrounds the second recess, wherein the substrate rests against the Waiting for the first and second support regions such that the first recess and a portion of the substrate superposed thereon define a first chamber and the second recess and a portion of the substrate superposed thereon define a second And a pressure control system in fluid communication with the first fluid chamber and the second fluid chamber, the pressure control system and the first and second chambers of the first fluid chamber and the second fluid chamber Each of them is fluidly conducting to control the first and second One of the pressures 28 1352874 Patent Application No. 9611· Patent Application Scope Correction This date is the date of July, so that the first and second chambers of the first fluid chamber have a positive pressure and the second fluid chamber The first and second chambers have a negative pressure for the (four) of the first fluid chamber and the positive pressure of the second chamber and the first and second of the second fluid chamber The indoor-negative pressure 'one of the _ areas between the first and second recesses is such that the first fluid chamber applies a negative force to a portion of the substrate that overlaps the fluid The above. 8. If the clamping system of claim 7 is applied, the further step comprises a plurality of fluid chambers arranged in columns and rows. 10. 9. If the gripping system of claim 7 is applied, the step further includes a first and second passages for respectively placing the first and second chambers in fluid communication with the force control system. The invention relates to a clamping system according to claim 7 , wherein the pressure control system comprises a plurality of fluid supply sources, wherein each row of the first chamber and each column of the first chamber and the plurality of One of the fluid supply sources is fluidly conductive with a different fluid supply to control the flow of fluid in the array of fluid chambers. = Please refer to the patent section (4) of the 1G item, where the fluid chambers of each of the fluid chambers are fluid-conducting with the common fluid supply. 20 The clamping system of claim H), wherein each of the fluid chambers 13 such as the second chamber is in fluid communication with the common fluid supply. The clamping system of the first aspect, wherein each of the first chambers of the fluid chambers of the fluid chambers is in fluid communication with the first medium of the fluid chambers The first source of a common fluid supply _ total ^ - room system - different brothers - a total of fluid source is a fluid guide 29 1352874 Patent Application No. 96110034 Patent application scope revision period: 100 years July. 14. The clamping system of claim 10, wherein one of the fluid chamber arrays is dense relative to the remaining fluid chambers of the fluid chamber array 10 1510 15 20 封。 15. 如申請專利範圍第10項之夾持系統,進一步包括複數個 通路,其中該等第一室的各行及該等第二室的各列被耦 合至不同通路以將該等第一及第二室放置成與該等不 同流體供源呈流體導通。 16. —種夾持系統,係用以固持一基材之一第一部分並且同 時弓彎該基材之一第二部分,該系統包含:一夾盤體 部,其具有第一及第二相對側,該第一側係包括配置於 列與行中之一流體室陣列,該流體室陣列包括一第一流 體室及一第二流體室,該第一流體室及該第二流體室各 者包含用以界定第一及第二分開的支撐區之第一及第 二分開的凹部,其中該第一支撐區係環繞該第二支撐區 及該等第一及第二凹部,而該第二支撐區環繞該第二凹 部,其中該基材休止抵住該等第一及第二支撐區,其中 該第一凹部及與其疊置之該基材的一部分係界定一第 一室而該第二凹部及與其疊置之該基材的一部分界定 一第二室;及一壓力控制系統,其具有複數個流體供 源,其中該等第一室的各行及該等第二室的各列係與該 複數個流體供源之一不同流體供源呈流體導通,該壓力 控制系統係控制該等第一及第二室内之一壓力,使得該 第一流體室之該等第一及第二室内具有一正壓力且該 30 第袖11034號專利申請案申請專利範圍修正本曰期· 1〇〇年7月 第二流體室之該等第一及第二室内具有一負壓力,其中 為了該第一流體室之該等第一及第二室内之一給定正 壓力及該第二流體室之該等第一及第二室内之—負壓 力,該等第一及第二凹部之間的一面積之一比值係為可 使侍该第一流體室將一負力施加至與該第一流體室疊 置之該基材的一部分上者。 10 15 17’如申請專利範圍第16項之夹持系統,其中該等流體室的 行中之各第-室係與一共同流體供源呈流體導通。 請專利範圍第16項之夾持系統,其中該等流體室的 -列中之各第二室係與一共同流體供源呈流體導通。 ·=申請專利範㈣_之夾持系統,其中該等流體室的 仃t之各第-室係與—第—共同流體供源呈流體導 2且其中該等流體室的—列中之各第二室係與-不同 通該第-共同流體供源之第二共同流體供源呈流體導 2〇.=1專中利=第】6項之夫持系统,進-步包括複數個 通路,其中該等第一室的各 合至不同通路以將該等第—及:專第二室的各列_ 同流體供源呈流體導通。 —至放置成與該等不 20 3120 seals. 15. The clamping system of claim 10, further comprising a plurality of passages, wherein each of the rows of the first chambers and the columns of the second chambers are coupled to different passages to treat the first and third The two chambers are placed in fluid communication with the different fluid sources. 16. A clamping system for holding a first portion of a substrate and simultaneously bending a second portion of the substrate, the system comprising: a chuck body having first and second relatives a first side system comprising an array of fluid chambers disposed in a row and a row, the fluid chamber array comprising a first fluid chamber and a second fluid chamber, the first fluid chamber and the second fluid chamber The first and second separate recesses for defining the first and second separate support regions, wherein the first support region surrounds the second support region and the first and second recesses, and the second The support region surrounds the second recess, wherein the substrate rests against the first and second support regions, wherein the first recess and a portion of the substrate superposed thereon define a first chamber and the second a recess and a portion of the substrate superposed thereon define a second chamber; and a pressure control system having a plurality of fluid sources, wherein each row of the first chambers and each of the second chambers One of the plurality of fluid sources is fluidly connected to one of the different fluid sources The pressure control system controls a pressure of one of the first and second chambers such that the first and second chambers of the first fluid chamber have a positive pressure and the patent application scope of the patent application No. Correcting the first and second chambers of the second fluid chamber in the first half of the year, having a negative pressure, wherein one of the first and second chambers of the first fluid chamber is given a positive a pressure and a negative pressure of the first and second chambers of the second fluid chamber, and a ratio of an area between the first and second recesses is such that the first fluid chamber will be negative A force is applied to a portion of the substrate that overlaps the first fluid chamber. 10 15 17' The gripping system of claim 16, wherein each of the first chambers in the row of the fluid chambers is in fluid communication with a common fluid supply. The clamping system of claim 16 wherein each of the second chambers of the fluid chambers is in fluid communication with a common fluid supply. The application of the patent system (4), wherein each of the first chambers of the fluid chambers and the first common fluid source are fluid guides 2 and wherein each of the fluid chambers The second chamber is different from the second common fluid source of the first common fluid source, and the fluid is guided by the fluid. 2 = 1 zhongzhongli = the sixth item of the system, the step includes a plurality of paths Each of the first chambers is coupled to a different passage to fluidly conduct the respective columns of the first and second chambers. - to the placement and the non-20 31
TW96111034A 2006-04-03 2007-03-29 Chucking system comprising an array of fluid chamb TWI352874B (en)

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JP4667524B2 (en) 2011-04-13
WO2007126767A3 (en) 2008-07-31

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