CN101411250A - 用于在接触面上涂覆焊料颗粒的方法以及适用于此的焊料颗粒和带有接触面的部件 - Google Patents

用于在接触面上涂覆焊料颗粒的方法以及适用于此的焊料颗粒和带有接触面的部件 Download PDF

Info

Publication number
CN101411250A
CN101411250A CNA2007800107257A CN200780010725A CN101411250A CN 101411250 A CN101411250 A CN 101411250A CN A2007800107257 A CNA2007800107257 A CN A2007800107257A CN 200780010725 A CN200780010725 A CN 200780010725A CN 101411250 A CN101411250 A CN 101411250A
Authority
CN
China
Prior art keywords
contact
solder grain
making surface
self
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800107257A
Other languages
English (en)
Inventor
斯蒂芬·菲德勒
克劳斯-彼得·加卢希基
詹斯-克里斯琴·霍尔斯特
伯恩哈德·M·沙克特纳
拉尔夫·施密特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASMPT GmbH and Co KG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of CN101411250A publication Critical patent/CN101411250A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/06—Solder feeding devices; Solder melting pans
    • B23K3/0607—Solder feeding devices
    • B23K3/0623—Solder feeding devices for shaped solder piece feeding, e.g. preforms, bumps, balls, pellets, droplets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/038—Post-treatment of the bonding area
    • H01L2224/0382—Applying permanent coating, e.g. in-situ coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/11011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/11013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the bump connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0239—Coupling agent for particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/0425—Solder powder or solder coated metal powder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12—Using specific substances
    • H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax, thiol

Abstract

本发明涉及一种在一部件(13)的接触面(14)上涂敷一层(18)焊料颗粒(16)的方法。按本发明规定，所述焊料颗粒(16)利用自组织过程涂敷，该自组织过程例如可通过烷基硫醇分子(15)引发。该分子是所述接触面(14)和所述焊料颗粒(16)之间的连接物，其中，后者为支持自组织过程配有一蜡层(17)。利用自组织过程可有利地将钎焊材料经济并精确定量地涂敷在部件(13)的接触面(4)上。此外，要求保护按照自组织原理准备用于钎焊工艺的部件(13)和焊料颗粒(16)。

Description

用于在接触面上涂覆焊料颗粒的方法以及适用于此的焊料颗粒和带有接触面的部件
本发明涉及一种在用于建立电连接的接触面上涂覆一层焊料颗粒的方法。
开头所述类型的方法例如由US 2004/0078966A1公开。由此可在开关支架的接触面上涂覆薄的焊料层，即，所述接触面首先涂敷一层粘结剂。在接触面预涂敷之后可以将焊料颗粒涂覆在开关支架上，其中，焊料颗粒仅黏附保持在通过粘结剂处理的接触面上。因此，在准备好的粘结剂层上形成了单层的焊料颗粒层，该焊料颗粒层在进一步处理中制备用于建立电连接的焊料沉积物(Lotdepot)。
此外，由现有技术公知的是，电元件可借助于自组织过程安装在开关支架的恰当位置上。
自组织过程(也称作自组装)已经应用于在开关支架上放置可电接触的部件。例如按照A.O′Riodan：“Fiel-configured self-assembly：manufacturing atthe mesoscale”，Materials Science and Engineering(材料科学与工程)C23(2003)，3-6页公开了一种方法，通过该方法可以将大量的发光二极管放置到一个开关支架上。由此例如可以成本低廉地制造大面积的显示器。自组织的过程通过适当的电场支持，电场将待安装的发光二极管引向准备好的装配位置，因为由此达到了能量有利的状态。
此外，H.O.Jacobs等人在“Fabrication of a Cylindrical Display byPatterned Assembly”，Science(科学)，296卷，2002年4月12日，记载了一种方法，该方法中，待安装的部件(发光二极管)悬浮在水中，并且放置在带有适当准备过的表面的基底上。在此，使用部件的金接触面(Goldkontaktflaechen)，所述部件积聚在基底合适的表面区域的阵列上。在自组织的装配之后，可以在装配的部件上例如涂敷一层薄膜在元件背侧，用于元件的进一步接触。
此外，按照Yeh和Smith的“Fluidic Self-Assembly of Microstructures andits Application to the Intergration of GaAs on Si”，IEEE(1994)，第279至284页公开的方法，由此实现发光二极管的自组织的装配过程，即，把单个的发光二极管制造成具有梯形截面，发光二极管可以在基底适当的加深处存放。这种自组织因此借助于形状配合(钥匙-锁-原理)实现。最后，还必须实现固定的发光二极管的电接触。
Xiong等人在“Controlled Multibatch Self-Assembly of Microdevices”，IEEE(2003)，第117至127页描述了这样一种方法，通过该方法，借助适当准备过的、分别具有亲水或疏水特性的表面，可实现自组织的放置。为实施该过程，各元件被分散在水中，其中，不同类型的部件可以在依次的放置工序中被覆设到分别出于该目的而调整的基底的表面区域内。此外，一次安置的部件的电接触可通过电化学方式实现。在此，电连接材料电化学地出现在为此设计的部件和基底的表面上，直至部件和基底之间的距离通过出现的接触材料连接。
最后在US 2005/0048697中公开了一种敷设由碳(纳米管)制成的最小细管的方法，借助该最小细管可建立电连接。在此，纳米管借助自组织过程涂敷到相邻的接触面上。纳米管具有用于触发自组织过程的功能表面。
前述所有的方法都需要对基底作适当的准备，以便在部件放置时迫使自组织过程发生。然而，在为自组织过程准备开关支架时也必须考虑到一些例如因开关支架的几何形状或其它功能区域而出现的情况。
本发明所要解决的技术问题在于，给出一种在接触面上涂覆焊料颗粒层的方法，通过该方法可以精确地确定接触面上的钎焊材料的量，并且应用简单。
按照本发明，该技术问题通过开头给出的方法由此解决，即，焊料颗粒通过一种自组织过程敷设在接触面上，其中，接触面和焊料颗粒为此具有触发自组织过程的表面。因此要使所述表面能触发自组织过程，这些表面就必须具有合适的表面特性。这些特性业已可以通过焊料颗粒或接触面的材料特性给定。另一种可能性是，接触面或焊料颗粒的表面配设有适宜的涂层，所述涂层具有触发自组织过程必需的特性。
利用自组织过程在接触面上产生焊料沉积物的优点在于，通过在接触面上形成单层的焊料颗粒的大小可以实现钎焊材料非常精确的定量。有别于例如传统的镂空版印刷方法(Schablonendruckverfahren)的是，该方法可以使得接触面外部没有多余的焊料沉积，因为焊料颗粒只能直接沉积在为自组织过程准备的接触面上。同时，该方法也有利地非常易于实施，因为自组织过程无需外部介入就能取得所希望的质量。在自组织过程的实用原理选择上可以追溯到现有技术中公知的实用原理。
按照本发明的一种设计规定，自组织过程通过有机硫醇分子，尤其是烷基硫醇分子引起，其中，所述分子用作接触面和焊料颗粒之间的连接环节。有机硫醇分子如下地支持自组织过程，即，所述分子优选通过其硫醇基与贵金属形成一相对稳定的金属-硫键(metal-thiolate-binding)，由此建立与一个结合伙伴(钎焊材料或接触面)的键联。另一结合伙伴必须这样地为自组织过程做准备，即，其与有机硫醇分子的有机部分起反应(例如基于范德华力或偶极子)。为此，另一结合伙伴例如可以涂敷一种有机物质，该有机物质又在接下来的钎焊过程中被去除，以便形成导电连接。另一种可能性是，另一结合伙伴也通过金属-硫键与有机硫醇分子连接，因此，自组织过程通过有机硫醇分子各自的有机部分进行。为此，所述分子配置有适合的官能基团(例如酯化物)。
如果焊料颗粒配设有一亲脂的表面，尤其是由蜡制成的表面，并且接触面的表面由金属形成，所述金属与有机硫醇分子的硫醇基形成金属-硫键，这是特别有利的。在这种情况下，硫醇基附着在接触面通常贵金属的或精炼金属的表面上，所述表面优选由金、银或铜制成。具有例如由蜡或其它亲脂物质制成的涂层的焊料颗粒在自组织过程的框架内优选积聚在有机硫醇分子的有机部分。
焊料颗粒的表面必须如此地构造，即，焊料颗粒的排斥力较小，因而使得焊料颗粒可以相邻地积聚在准备好的接触面上。另一方面，焊料颗粒的表面的准备应防止焊料颗粒的附聚，这通过焊料颗粒小的排斥力或至少一个中性状态实现。
此外，如果焊料颗粒具有基本上相同的大小也是有利的。由此可以在接触面上形成多个单层的钎焊材料层，该钎焊材料层具有恒定的厚度。此外，通过焊料颗粒相同的大小可以保证准确地定量(根据接触面的面积和焊料颗粒的大小)。
本发明还涉及一种由钎焊材料制成的焊料颗粒。由开头已经提及的US2004/0078966A1可知，这种类型的焊料颗粒可以用于在开关支架的接触面上制造焊料层。
本发明所要解决的技术问题在于，给出一种由钎焊材料制成的焊料颗粒，通过这种焊料颗粒可以在使用相对不复杂的钎焊方法的情况下准确地定量。
该进一步的技术问题按照本发明由此解决，即，焊料颗粒由亲脂的、尤其是由蜡制成的涂层包围。因此，该焊接颗粒适用于钎焊工艺，该工艺利用自组织过程，其中，尤其使用已经提及的有机硫醇分子作为按本发明的焊料颗粒和适宜的接触面之间的连接环节。无需高制造费用，就可有利地通过所述方法精确地实施钎焊工序。
按照本发明的一种进一步发展规定，在亲脂性涂层上附加一有机硫醇分子，尤其是带有有机部分的烷基硫醇分子构成的单分子层，使得分子的硫醇基形成焊料颗粒的表面。如此准备的焊料颗粒可以有利地省去其它准备步骤，例如被浸在池子里，该焊料颗粒适用于开关支架的钎焊。所使用的开关支架具有由金属，尤其是铜、银或金制成的接触面，焊料颗粒可以通过自组织过程在形成金属-硫键的情况下附着在所述接触面上。
最后，本发明涉及一种带有至少一个由金属制成的电接触面的部件，其中，在形成金属-硫键的情况下该接触面上附加单层的有机硫醇分子，尤其是烷基硫醇分子，因此，这些分子的有机部分形成接触面的表面。
DE 10 2004 041 555A1公开了这样一种部件，其具有至少一个电接触层。该接触层例如可以由金制成。在接触面上敷设有作为锚定基团(Ankergruppe)的带有硫醇基的有机化合物单层。因此保证了接触层与有机化合物的连接。由此生成一自组织层，在该层上还可以设置第二电极，由此同时在两个电极之间形成电连接。
基于此，本发明进一步要解决的问题是，提供一种带有电接触面的部件，该部件适用于易于实施的钎焊工艺，其中，在钎焊中可以精确地对接触面上的钎焊材料定量。
按照本发明，该技术问题通过所述部件由此解决，即，在部件上的单分子层上附加至少一个焊料颗粒，该焊料颗粒具有尤其由蜡制成的亲脂表面。这种类型的部件可以作为预焊接的部件有利地引入进一步加工过程中。
当接触面的表面加载有焊料颗粒时(所述焊料颗粒优选附着在有机硫醇分子的有机部分上)，接触面的表面可以有利地触发自组织过程。这例如可以通过带有蜡的焊料颗粒涂层实现。通过使用自组织过程可以有利地低成本地实施钎焊工艺，其中，通过形成焊料颗粒单层还可以在接触面上精确地定量。
接下来根据附图说明本发明其它的细节。相同或相应的元件在各图中用相同的附图标记表示，因此仅说明各图间的不同之处。图中：
图1和2是按本发明的方法的一种实施形式，其中，第一步先在部件的接触面上敷设烷基硫醇-分子，再在第二步中将焊料颗粒与烷基硫醇-分子结合，
图3是按本发明的部件的一种实施形式，以及
图4是按本发明的焊料颗粒的一种实施形式。
图1中示出了一具有水溶液12的容器11，在该溶液中放有带有接触面14的开关支架13。接触面具有由金制成的表面。水溶液中加有烷基硫醇-分子15(示意示出)。如接下来还将详细说明的那样，这些分子在接触面14上形成单分子层18a。
在第二步(图2)中，在溶液12中加入焊料颗粒16，该焊料颗粒配设有由蜡制成的亲脂性涂层17。所述焊料颗粒在自组织过程中作为另一单分子层18b沉积在接触面14上，由此产生精确定量的焊料沉积物。
接下来举例说明一个自组织过程，其适用于将焊料颗粒16放置到接触面上。接触面14由金制成。不同分子的硫醇基19能够化学地附着在由该金属制成的表面上。在此，氢原子从硫醇基19分离并且形成一金属-硫键20。可以考虑例如烷基硫醇15作为可能的硫醇，其具有烷烃链21，硫醇基19位于烷烃链的端部。由于硫醇基19在接触面14的表面上相邻地积聚，因此形成平行取向的烷烃链(单分子层18a)，该烷烃链与接触面14的表面相隔一定距离。另一方面，如果焊料颗粒16例如配设有由蜡制成的涂层17，那么就会由于这些物质各自的亲脂性强烈促进此时决定接触面24表面特性的烷烃链21和焊料颗粒16的表面之间的化合，因此实现了焊料颗粒16在接触面14上的自组织的附着(单分子层18b)。可选地，烷基硫醇15当然也可以通过其长链的烷基部分21在第一过程步骤中附着在焊料颗粒16的蜡表面上，因此，焊料颗粒在加入容器11时附着在接触面14上，该接触面在这种情况下不需要作进一步的处理。
对于按图1和2发生的自组织过程将在接下来的替代方案中说明。自组织可理解为一种热力学过程，在该过程中，表面上自动形成一种规则。实际上，自组织的本质是自发地在分界面(在本实施形式中是固相-液相状的，但也可以考虑固相-气相状或液相-气相状)上形成有序的结构。在此，如果实现自组织所希望的形式，那么将实现能量的最小化。换句话说，单个的、自组织的成分由于排斥力和吸引力以所希望的方式排序，其中，所提及的力可由形状、表面特性、负载、极性、磁矩或质量也或其它任意编码的信息产生。
通常可以将要使用的作用原理分为物理的、化学的和生物化学的，其中，在所述的顺序中，可能排列的可实现的选择性由于分界面的寻址而增加(可能的是，例如同时在为之设计的表面上有选择性的积聚不同大小的焊料颗粒或合金组合物)。物理原理例如可考虑表面张力(使用毛细作用力)以及机械力、静电力和磁力。化学原理可以基于非共价的、部分共价或共价的相互作用、复合组成直至形成化学键或基于离子置换直至形成席夫碱(Schiff’schenBase)。生物化学原理例如可考虑抗原-抗体结合、寡核苷酸(Oligonukleotiden)之间或被酶作用的化合物之间的结合。为利于上述效应，设计用于进行自组织过程的表面区域必须具有合适的表面特性。这可以一次性地通过选择表面的材料实现，然而，也可以通过以适当的方式为表面涂敷一功能涂层实现。
为了能放置不同类型的焊料颗粒，在各式各样的作用原理中选出一个组合，该组合保证一定表面相对一定待放置的部件的各种选择性，也就是说，不允许其它表面区域之间的兼容性，以便保证焊料颗粒放置的明确性。
图3示出了设计为倒装晶片的部件22。该部件在其安装侧23具有接触面14，该接触面以前述方式通过作为连接物的烷基硫醇分子应用于单个的球状焊料颗粒16。按照本发明的这种变型，借助于烷基硫醇分子15为每个接触面精确地设置一个焊料球，该焊料球如其在倒装晶片安装时常见的那样。虽然没有示出，然而完全可能的是，焊料球(Lotkugel)单独地固定在开关支架的准备好的接触面上，倒装晶片应该放置在该接触面上。
此外，单个的焊料颗粒16同样在接触面上形成单层，因为焊料颗粒不可能在接触面上堆叠。

Claims (8)

1.一种在用于建立电连接的接触面(14)上涂敷一层焊料颗粒(16)的方法，其特征在于，所述焊料颗粒(16)通过一种自组织过程涂敷在所述接触面(14)上，其中，所述接触面(14)和所述焊料颗粒(16)为此具有触发所述自组织过程的表面。
2.如权利要求1所述的方法，其特征在于，所述自组织过程通过有机硫醇分子，尤其是烷基硫醇分子(15)引发，其中，所述分子用作所述接触面(14)和所述焊料颗粒(16)之间的连接物。
3.如权利要求2所述的方法，其特征在于，所述焊料颗粒(16)配有一亲脂的涂层(17)，尤其是由蜡制成的涂层，并且所述接触面(14)的表面由金属形成，该金属与所述有机硫醇分子的硫醇基形成金属-硫键。
4.如权利要求3所述的方法，其特征在于，所述接触面(14)的表面由金、银或铜制成。
5.如权利要求1至4之一所述的方法，其特征在于，所述焊料颗粒(16)具有基本上均匀的尺寸。
6.一种由钎焊材料制成的焊料颗粒，其特征在于，所述焊料颗粒被一亲脂的涂层(17)，尤其是由蜡制成的涂层包围。
7.如权利要求6所述的焊料颗粒，其特征在于，在所述亲脂的涂层(17)上附着一有机硫醇单分子层(18a)，尤其是带有有机部分的烷基硫醇单分子(15)层(18a)，从而使得所述分子的硫醇基形成所述焊料颗粒(16)的表面。
8.一种带有至少一个由金属制成的电接触面(14)的部件(13，22)，其中，在所述接触面(14)上附着一有机硫醇单分子层(18a)，尤其是烷基硫醇单分子层(15)并形成金属-硫键，从而使得这些分子的有机部分形成所述接触面(14)的表面，其特征在于，在所述单分子层(18a)上附着至少一个焊料颗粒(14)，所述焊料颗粒具有一尤其由蜡制成的亲脂性表面。
CNA2007800107257A 2006-03-31 2007-03-28 用于在接触面上涂覆焊料颗粒的方法以及适用于此的焊料颗粒和带有接触面的部件 Pending CN101411250A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006016276.5 2006-03-31
DE102006016276A DE102006016276B3 (de) 2006-03-31 2006-03-31 Verfahren zum Aufbringen von Lotpartikeln auf Kontaktflächen sowie hierfür geeignete Lotpartikel und Bauteile mit Kontaktflächen

Publications (1)

Publication Number Publication Date
CN101411250A true CN101411250A (zh) 2009-04-15

Family

ID=38170171

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800107257A Pending CN101411250A (zh) 2006-03-31 2007-03-28 用于在接触面上涂覆焊料颗粒的方法以及适用于此的焊料颗粒和带有接触面的部件

Country Status (3)

Country Link
CN (1) CN101411250A (zh)
DE (1) DE102006016276B3 (zh)
WO (1) WO2007113182A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016215879B3 (de) * 2016-08-24 2018-02-01 Robert Bosch Gmbh Steckkontakt, Verfahren zur Herstellung eines solchen sowie elektrisches Steckverbindersystem

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04115407A (ja) * 1990-09-03 1992-04-16 Soken Kagaku Kk 異方導電性接着剤組成物
JP3278903B2 (ja) * 1992-06-05 2002-04-30 昭和電工株式会社 はんだ粉末およびはんだ回路形成方法
JP2592757B2 (ja) * 1992-10-30 1997-03-19 昭和電工株式会社 はんだ回路基板及びその形成方法
US5922403A (en) * 1996-03-12 1999-07-13 Tecle; Berhan Method for isolating ultrafine and fine particles
JP3893100B2 (ja) * 2002-10-29 2007-03-14 新光電気工業株式会社 配線基板への電子部品搭載方法
US6989325B2 (en) * 2003-09-03 2006-01-24 Industrial Technology Research Institute Self-assembled nanometer conductive bumps and method for fabricating
KR100637763B1 (ko) * 2004-05-12 2006-10-23 주식회사 마이크로글로브 이방성 도전접속용 절연 도전성 입자와 그 제조방법 및이를 이용한 이방성 도전접속재료
DE102004041555B4 (de) * 2004-08-27 2007-08-02 Infineon Technologies Ag Verfahren zur Herstellung von molekularen Speicherfeldern mit selbstorganisierten Monolagen und gedruckten Elektroden
JP3964911B2 (ja) * 2004-09-03 2007-08-22 松下電器産業株式会社 バンプ付き基板の製造方法
US7153765B2 (en) * 2005-03-31 2006-12-26 Intel Corporation Method of assembling soldered packages utilizing selective solder deposition by self-assembly of nano-sized solder particles
US7662708B2 (en) * 2005-07-27 2010-02-16 Palo Alto Research Center Incorporated Self-assembled interconnection particles

Also Published As

Publication number Publication date
DE102006016276B3 (de) 2007-07-12
WO2007113182A1 (de) 2007-10-11

Similar Documents

Publication Publication Date Title
US11395413B2 (en) Liquid metal fusion with conductive inks and pastes
KR100702743B1 (ko) 전자 장치 및 그 제조 방법
TWI375231B (zh)
CN107403782B (zh) 芯片封装体
Li et al. Electrical conductive adhesives with nanotechnologies
TWI527848B (zh) 非隨機異方性導電膠膜及其製程
JP4948067B2 (ja) 自己集合化電気的接点構造体の形成方法、自己集合化電気的接点構造体および電気的接点構造体
RU2008113143A (ru) Дисперсия для нанесения металлического слоя
DE102017122865B3 (de) Verfahren zum Bilden einer metallischen Zwischenverbindung, Verfahren zum Herstellen einer Halbleiteranordnung mit einer metallischen Zwischenverbindung und Halbleitervorrichtungsanordnung mit einer metallischen Zwischenverbindung
CN101262743A (zh) 形成光刻胶层压基板、电镀绝缘基板、电路板金属层表面处理及制造多层陶瓷电容器的方法
CN103562331A (zh) 使用表面改性导电颗粒的固定阵列的各向异性导电膜
Zhang et al. PVP-mediated galvanic replacement synthesis of smart elliptic Cu–Ag nanoflakes for electrically conductive pastes
CN101091245A (zh) 半导体器件中不同部件界面间的层及其制造方法
CN101796655B (zh) 在太阳能电池背面上设置触点的方法及具有根据所述方法设置的触点的太阳能电池
JP4715628B2 (ja) 接合材料及び接合方法
CA2778209A1 (en) Method for the self-assembly of electrical, electronic or micromechanical components on a substrate
CN101411250A (zh) 用于在接触面上涂覆焊料颗粒的方法以及适用于此的焊料颗粒和带有接触面的部件
CN110752194B (zh) 微型粘合结构和其形成方法
CN101416301B (zh) 将电接触元件放置在电路载体上的方法和适于实施该方法的安装系统
US7510962B2 (en) Method for producing an anisotropic conductive film on a substrate
JP2010199591A (ja) 基板に金属パターンを製造する方法
JP4128565B2 (ja) 電子回路の電極構造及びその製造方法
US20200099147A1 (en) Coated electrical connectors and methods of making and using thereof
DE10238587B4 (de) Verfahren zur Herstellung einer Verbundvorrichtung
WO2000048242A1 (de) Verfahren zur herstellung elektrisch leitender verbindungen

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SIEMENS ELECTRONIC ASSEMBLY SYSTEM JOINT LIABILITY

Free format text: FORMER OWNER: SIEMENS AG

Effective date: 20090731

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20090731

Address after: Munich, Germany

Applicant after: Siemens Electronics Assembling System AG

Address before: Munich, Germany

Applicant before: Siemens AG

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20090415