CN101410989A - 功能元件安装模块及其制造方法 - Google Patents

功能元件安装模块及其制造方法 Download PDF

Info

Publication number
CN101410989A
CN101410989A CNA2007800116133A CN200780011613A CN101410989A CN 101410989 A CN101410989 A CN 101410989A CN A2007800116133 A CNA2007800116133 A CN A2007800116133A CN 200780011613 A CN200780011613 A CN 200780011613A CN 101410989 A CN101410989 A CN 101410989A
Authority
CN
China
Prior art keywords
function element
package structure
function
sealing resin
structure member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2007800116133A
Other languages
English (en)
Other versions
CN101410989B (zh
Inventor
米田吉弘
浅田隆广
铃木和明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexerials Corp
Original Assignee
Sony Chemical and Information Device Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Chemical and Information Device Corp filed Critical Sony Chemical and Information Device Corp
Publication of CN101410989A publication Critical patent/CN101410989A/zh
Application granted granted Critical
Publication of CN101410989B publication Critical patent/CN101410989B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14618Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02257Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/146Mixed devices
    • H01L2924/1461MEMS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49007Indicating transducer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49146Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)

Abstract

本发明提供可小型化且不需高价特殊构件的功能元件安装模块的制造方法。使用以引线接合对具有功能部(30)和其周围的焊盘(6)的功能元件(3)使其上表面侧为上侧地进行安装的基板(2),在基板(2)上,在光功能元件(3)的周围设置阻挡液状的密封树脂(8)用的突堤部(7),滴下密封树脂(8),在光功能元件(3)和突堤部(7)之间焊盘(6)和金线(5)的一部分露出地填充密封树脂(8),将具有与光功能元件(3)对应的孔部(10a)的封装件结构构件(10)在使孔部(10a)与光功能元件(3)的光功能部(30)对置的状态下与突堤部(7)抵接,从而使封装件结构构件(10)与密封树脂(8)接触,使密封树脂(8)硬化而将密封构成部件(10)固定在基板(2)上,除去突堤部(7)。

Description

功能元件安装模块及其制造方法
技术领域
本发明涉及例如使用受光元件或发光元件等功能元件、使用密封树脂将功能元件安装到基板上的功能元件安装模块及其制造方法。
背景技术
目前,作为这种功能元件安装模块,例如已知具有中空结构的封装件的安装模块。
如图8所示,在现有的光功能元件安装模块100中,在基板102上通过框状的间隔件103安装透光性构件104,构成封装件101。并且,在该封装件101内,使光功能部106与透光性构件104对置地配置光功能元件105,从而进行光信号107的收发。
但是,在这样的现有技术的情况下,为了保持透光性构件104,需要框状的间隔件103,因此存在小型化受限的问题。
此外,例如使波长405nm的短波长的蓝紫激光透过时,作为透光性构件104,必须使用实施了特殊涂敷的玻璃,存在非常昂贵的问题。
另一方面,在专利文献1中,作为现有技术,公开了在基板上代替框状的间隔件通过密封剂安装透光性部件而构成的封装件。
专利文献1:特开平3-225867号公报
发明内容
本发明是为了解决上述现有技术中的问题而进行的,其目的是提供一种能够小型化且不需要高价特殊构件的功能元件安装模块及其制造方法。
为了实现上述目的,本发明的功能元件安装模块的制造方法具有如下步骤:使用如下基板,该基板以元件主体的功能部侧面为上侧利用引线接合安装有在该功能部侧面上具有预定的功能部和在其周围的焊盘的功能元件,在所述基板上,在所述光功能元件的附近设置用于阻挡液状密封树脂的突堤部,在所述光功能元件和所述突堤部之间滴下液状密封树脂,在该光功能元件和该突堤部之间,以所述焊盘以及所述引线接合用的引线的一部分露出的方式填充该密封树脂,使具有与所述功能元件对应的孔部的封装件结构构件在使该孔部与所述功能元件的功能部对置的状态下与所述突堤部抵接,由此,使该封装件结构构件与所述液状的密封树脂接触,使所述液状的密封树脂硬化,将所述封装件结构构件固定在所述基板上,除去所述突堤部。
在本发明中,在上述发明中所述封装件结构构件的孔部形成为与所述功能元件大致相同大小。
在本发明中,在上述发明中在所述功能元件的焊盘上设置能够进行金引线接合并且用于保护Al系电极的金属膜。
在本发明中,在上述发明中还具有在所述封装件结构构件上设置覆盖所述孔部的保护用覆盖构件的步骤。
在本发明中,在上述发明中所述保护用覆盖构件是能够从所述封装件结构构件剥离的保护膜。
另一方面,本发明的功能元件安装模块具备:基板,该基板以元件主体的功能部侧面为上侧利用引线接合安装有在该功能部侧面上具有预定的功能部和在其周围的焊盘的功能元件;封装件结构构件,具有与所述功能元件对应的孔部,在所述功能元件的焊盘和所述引线接合用的引线的一部分露出的状态下,由密封树脂密封该功能元件,并且,所述封装件结构构件由该密封树脂固定在所述基板上。
在本发明中,在上述发明中在所述封装件结构构件上设置有覆盖所述孔部的保护用覆盖构件,在该保护用覆盖构件上设置有与所述功能元件的功能部上的空间连通的排气口。
在本发明中,在上述发明中在所述封装件结构构件上设置有覆盖所述孔部的保护用覆盖构件,在所述封装件结构构件和所述保护用覆盖构件之间设置有与所述功能元件的功能部上的空间连通的排气口。
在本发明中,在上述发明中在所述封装件结构构件上设置有覆盖所述孔部的保护用覆盖构件,该保护用覆盖构件是能够从所述封装件结构构件剥离的保护膜。
根据本发明,在功能元件和突堤部之间滴下液状的密封树脂并进行硬化,固定在封装件结构构件上,所以,不需要现有技术中的框状间隔件,能够提供非常小型的功能元件安装模块。
此外,根据本发明,得到功能元件的功能部露出的状态下的模块,所以,能够提供能够不使用实施了特殊涂敷的高价玻璃且不使例如蓝紫激光这样的短波长的光衰减地可靠地进行输入输出、并且散热性优良的功能元件安装模块。
并且,在本发明的情况下,以功能元件侧面上的焊盘和引线接合用的引线的一部分露出的方式在功能元件和突堤部之间填充密封树脂并进行硬化,所以,功能元件小型化,在焊盘和功能部的距离较近的情况下,也能够可靠地使位于功能部侧面上的焊盘的内侧的功能部露出,其结果是,能够谋求功能元件安装模块的进一步小型化。
在本发明中,如果将封装件结构构件的孔部形成为与功能元件大致相同大小,则由于在功能元件和突堤部之间填充的密封树脂的表面张力,能够可靠地使功能元件侧面上的至少焊盘露出。
在本发明中,在功能元件的焊盘上设置能够进行金引线接合且用于保护Al系电极的金属膜的情况下,保护容易腐蚀的焊盘,所以,在不使引线接合的接合强度降低的情况下提高焊盘的耐腐蚀性。
在本发明中,在封装件结构构件上设置覆盖孔部的保护用覆盖构件,从而能够防止异物附着在功能元件的功能部上。即,根据本发明,能够得到中空结构的封装件。
此外,如果在该保护用覆盖构件上或在封装件结构构件和保护用覆盖构件之间设置与功能元件的功能部上的空间连通的排气口,则能够防止在封装件安装时的焊料回流中的中空部分的气体或水分膨胀所导致的封装件的破坏。
另一方面,如果使用能够从所述封装件结构构件剥离的保护膜作为保护用覆盖构件,则通过在使用时(向装置组装时)剥离保护部件,由此,例如在使用光功能元件的情况下能够不使光信号衰减地进行输入输出。
根据本发明,可提供一种能够进行使用小尺寸的功能元件的模块的小型化且不需要高价特殊的构件的功能元件安装模块。
附图说明
图1(a)~(d)是说明本实施方式的功能元件安装模块的制造方法的概要图。
图2是该功能元件安装模块的截面结构图。
图3是示出该功能元件安装模块密封前的状态的平面图。
图4(a)~(c)是示出本发明另一实施方式的主要部分的截面结构图。
图5(a)~(c)是示出本发明又一实施方式的主要部分的截面结构图。
图6是示出该实施方式的变更例的截面结构图。
图7是示出该实施方式的变化例的截面结构图。
图8是现有的功能元件安装模块的截面结构图。
符号说明
1...功能元件安装模块  2...基板  3...光功能元件(功能元件)3a...上表面(功能部侧面)  4...布线图案  5...金线(引线接合用的引线)  6...焊盘  7...突堤部  8...密封树脂  9...外部连接端子  10...封装件结构构件  10a...孔部  12...切除线  15...保护膜  16...保护用覆盖构件  16a...排气口  30...光功能部(功能部)
具体实施方式
下面,参考附图详细地说明本发明的实施方式。
图1(a)~(d)是说明本实施方式的功能元件安装模块的制造方法的概要图,图2是该功能元件安装模块的截面结构图,图3是示出该功能元件安装模块密封前的状态的平面图。
如图1(a)所示,在本实施方式中,首先,在基板2上,对具有受光元件或发光元件等光功能部(功能部)30的光功能元件(功能元件)3使设置有光功能部30的上表面(功能部侧面)3a朝向上侧地进行安装。
在此,光功能元件3的光功能部30设置在光功能元件3的上表面3a的中央部。此外,在光功能元件3的上表面3a的光功能部30的周围(在本实施方式的情况下是两边缘部)设置多个焊盘6。
在本发明的情况下,没有特别地限定,但是,从提高焊盘6的耐腐蚀性的观点来看,优选在焊盘6上设置保护用的金属膜。
从不使金的引线接合的接合强度下降的观点来看,优选该金属膜使用能够进行金引线接合且用于保护Al系电极的金属材料。作为这样的材料,例如优选使用在凸点下金属中使用的材料(例如Ni/Au合金)。
另一方面,基板2上的光功能元件3的周围(在本实施方式的情况下是基板2的长度方向的两侧边缘部),设置多个图案状的连接部4,并且采用金线(引线接合用的引线)5电连接这些连接部4和光功能元件3的焊盘6。
并且,基板2上的连接部4通过填充在通孔内的导电性材料20,连接到基板2的背侧的外部连接端子9上。
并且,在基板2上的光功能元件3的周围区域(例如基板2的边缘部),设置用于阻挡液状的密封树脂8的突堤部7。
在本发明的情况下,突堤部7的形状没有特别地限定,但是从可靠地阻挡密封树脂8的观点来看,优选形成为包围光功能元件3的环状(例如矩形形状)。
此外,对于突堤部7的高度来说,优选设定条件,使得在下述的封装件结构构件10的按压时,上端部分成为比金线5的上端部的位置高的位置。
接下来,如图1(b)所示,在光功能元件3和突堤部7之间滴下液状的密封树脂8,在光功能元件3和突堤部7之间填充密封树脂8。
此时,优选密封树脂8不到达光功能元件3的焊盘6,并且密封树脂8的顶部成为与突堤部7的上端部大致相等的形状。并且,在这种状态下,成为焊盘6和焊盘6侧的金线5的一部分(端部分)露出的状态。
在本发明的情况下,密封树脂8的种类没有特别地限定,可以采用热硬化性树脂或紫外线硬化性树脂中的任何一种树脂。特别是,从确保密封质量的观点来看,优选采用环氧系树脂。
并且,密封树脂8的粘度没有特别地限定,但是从防止密封树脂8向光功能元件3的上表面3a流动的观点来看,优选采用5~50Pa·s的粘度。
并且,如图1(c)所示,例如将由印刷布线板、塑料板等构成的平板状的封装件结构构件10抵接配置在突堤部7的上端部,并且以预定的压力整体地向基板2的方向按压。
此处,如图3所示,在封装件结构构件10上,设置与光功能元件3的上表面3a的形状大致相同的形状并且大小大致相同或稍大的孔部10a,以该孔部10a位于光功能元件3的正上方的方式对封装件结构构件10进行对位并按压。
并且,通过该步骤,封装件结构构件10的基板2侧的面(下表面)和密封树脂8接触,在光功能元件3的周围,在基板2和封装件结构构件10之间填充密封树脂8。
即,在光功能元件3和突堤部7之间填充的密封树脂8,通过毛细管现象沿着封装件结构构件10的下表面向光功能元件3的上表面3a扩展,但是,由于密封树脂的表面张力而在孔部10a的边缘部被阻挡,维持焊盘6和焊盘6侧的金线5的一部分(端部)露出的状态。
在本发明的情况下,光功能元件3的上表面3a的周缘部和孔部10a的内缘部之间的距离D(参考图3)没有特别地限定,但是从防止密封树脂8向光功能元件3的上表面3a流动的观点来看,优选是0~1mm。
并且,光功能元件3的上表面3a和密封件构成部件10的下表面之间的距离(间隙)没有特别地限定,但是从防止密封树脂8向光功能元件3的上表面3a流动的观点来看,优选是100~500μm。
并且,例如在采用热硬化型树脂作为密封树脂8时,在该状态下在预定的温度下进行加热,从而使密封树脂8硬化,将封装件结构构件10固定在基板2上。
之后,如图1(d)所示,沿着突堤部7的内侧附近的切除线12进行切割,由此,如图2所示,得到作为目的的光功能元件安装模块1。
如上所述,根据本实施方式,由于不需要现有技术那样的框状的间隔件,所以可以提供非常小型的功能元件安装模块1。
此外,根据本实施方式,由于得到光功能元件3的光功能部30露出的状态的模块,所以可以提供能够不采用实施特殊涂敷的高价的玻璃且不使例如蓝紫激光这样的短波长的光衰减而可靠地进行输入输出、并且散热性优良的功能元件安装模块1。
并且,在本实施方式的情况下,以与光功能元件3大致相同的大小形成封装件结构构件10的孔部10a,以光功能元件3的上表面3a上的焊盘6以及金线5的焊盘6侧的端部分露出的方式在光功能元件3和突堤部7之间填充密封树脂8并进行硬化,所以,光功能元件3小型化,并且即使在焊盘6和光功能部30的距离较近的情况下,也可以在光功能元件3的上表面3a上使位于焊盘6的内侧的光功能部30可靠地露出,其结果是,可以谋求功能元件安装模块1的进一步小型化。
图4(a)~(c)是示出本发明另一实施方式的主要部分的截面结构图,下面,与上述实施方式对应的部分采用相同的符号,并且省略其详细的说明。
如图4(a)所示,在本实施方式中,在由上述实施方式的图1(a)~(c)中说明的步骤填充密封树脂8并使其硬化而固定在基板2上的封装件结构构件10上,例如采用粘接剂以覆盖孔部10a的方式贴合例如由树脂材料构成的保护膜15。
在这种情况下,对于保护膜15的粘接中所使用的粘接剂来说,使用粘接力较弱并且能够从封装件结构构件10剥离保护膜15的粘接剂。
之后,如图4(b)和(c)所示,与上述实施方式相同地,沿着突堤部7的内侧附近的切除线12进行切割,从而得到作为目的的功能元件安装模块1A。
根据具有这样结构的本实施方式,除了与上述实施方式相同的效果,由于在封装件结构构件10上设置有覆盖功能部露出用孔部10a的保护膜15,所以,能够防止异物附着在光功能元件3的光功能部30上。
并且,在本实施方式中,由于采用能够从封装件结构构件10剥离的保护膜15,所以,在使用时剥离保护膜15(参考图4(c)),由此,可以不使针对光功能元件3的光功能部30的光信号衰减地进行输入输出。其他结构以及作用效果与上述实施方式相同,所以,省略其详细说明。
图5(a)~(c)是示出本发明又一实施方式的主要部分的截面结构图,下面,与上述实施方式对应的部分采用相同的符号,并且省略其详细的说明。
如图5(a)所示,对于本实施方式来说,采用具有光传感器以外的磁传感器等功能部30A的功能元件3A,在由上述实施方式的图1(a)~(c)中说明的步骤填充密封树脂8并使其硬化而固定到基板2上的封装件结构构件10上,例如采用粘接剂以覆盖孔部10a的方式贴合板状的保护用覆盖构件16。
并且,如图5(b)以及(c)所示,与上述实施方式相同地,沿着突堤部7的内侧附近的切除线12进行切割,从而去除突堤部7。
由此,得到由完全密闭型的中空结构体构成的功能元件安装模块1B。
如上所述,根据本实施方式,除了与上述实施方式相同的效果,由于在封装件结构构件10上设置有覆盖孔部10A的保护用覆盖构件16,所以能够防止异物附着在光功能元件3A的光功能部30A上。
图6是示出图5(a)~(c)所示的实施方式的变形例的截面结构图。
如图6所示,在该功能元件安装模块1C中,在保护用覆盖构件16的例如与功能元件3A对置的部分设置与功能元件3A的功能部30A上的空间32连通的排气口16a。
在本例中,预先在保护用覆盖构件16上例如通过钻孔加工等设置排气口16a,如上所述,以覆盖孔部10a的方式在封装件结构构件10上贴合保护用覆盖构件16之后,进行上述的切割,从而得到作为目的的功能元件安装模块1C。
在本发明的情况下,保护用覆盖构件16的排气口16a的直径没有特别地限定,但是从可靠地防止异物侵入的观点来看,优选排气口16a的直径为0.1~0.5mm。并且,在本实施方式中,在贴合保护用覆盖构件16之后,按压封装件结构构件10也可以。
根据具有这样结构的本实施例的功能元件安装模块1C,由于在保护用覆盖构件16上设置有与功能元件3A的功能部30A上的空间连通的排气口16a,所以,在封装件安装时的焊料回流中,可以防止由于封装件内部的空间32等的中空部分的气体或水分膨胀所导致的封装件的破坏。
其他结构以及作用效果与上述实施方式相同,所以省略其详细的说明。
图7示出在图5(a)~(c)所示的实施方式中在保护用覆盖构件上设置的排气口的其他例子。下面,与上述实施方式对应的部分采用相同的符号,并且省略其详细的说明。
如图7所示,在本实施方式的功能元件安装模块1D中,在保护用覆盖构件16的与封装件结构构件10对置的部分,例如形成槽部,由此,在将封装件结构构件10安装在保护用覆盖构件16上的情况下,在它们之间设置与功能元件3A的功能部30A上的空间32连通的排气口17。
在本实施方式中,预先在保护用覆盖构件16上设置槽部,如上所述,以覆盖孔部10a的方式在封装件结构构件10上使槽部对置地粘合保护用覆盖构件16之后,进行上述的切割,从而得到作为目的的功能元件安装模块1D。
在具有这样结构的本实施方式中,也在封装件结构构件10和保护用覆盖构件16之间设置与功能元件3A的功能部30A上的空间32连接的排气口17,所以,在封装件安装时的焊料回流中,能够防止封装件内部的空间32等的中空部分的气体或水分膨胀所导致的封装件的破坏。
其他结构以及作用效果与上述实施方式相同,所以省略其详细的说明。
并且,本发明不限于上述的实施方式,可以进行各种变形。
例如,在上述实施方式中,将突堤部形成环状,但是只要可靠地阻挡液状的密封树脂,例如也可以形成为以预定间隔排列多个突状部分等的其他形状。
此外,本发明不仅适用于采用光功能元件或磁传感器的功能元件安装模块,而且适用于各种MEMS(Micro Electro Mechanical System)用部件。

Claims (9)

1.一种功能元件安装模块的制造方法,具有如下步骤:
使用如下基板,该基板以元件主体的功能部侧面为上侧利用引线接合安装有在该功能部侧面上具有预定的功能部和在其周围的焊盘的功能元件,
在所述基板上,在所述功能元件的附近设置用于阻挡液状的密封树脂的突堤部,在所述功能元件和所述突堤部之间滴下液状的密封树脂,在该功能元件和该突堤部之间,以所述焊盘以及所述引线接合用的引线的一部分露出的方式填充该密封树脂,
使具有与所述功能元件对应的孔部的封装件结构构件在使该孔部与所述功能元件的功能部对置的状态下与所述突堤部抵接,由此,使该封装件结构构件与所述液状的密封树脂接触,
使所述液状的密封树脂硬化,将所述封装件结构构件固定在所述基板上,
除去所述突堤部。
2.根据权利要求1的功能元件安装模块的制造方法,其中,
所述封装件结构构件的孔部形成为与该功能元件大致相同大小。
3.根据权利要求1的功能元件安装模块的制造方法,其中,
在所述功能元件的焊盘上设置能够进行金引线接合并且用于保护Al系电极的金属膜。
4.根据权利要求1的功能元件安装模块的制造方法,其中,
还具有在所述封装件结构构件上设置覆盖所述孔部的保护用覆盖构件的步骤。
5.根据权利要求4的功能元件安装模块的制造方法,其中,
所述保护用覆盖构件是能够从所述封装件结构构件剥离的保护膜。
6.一种功能元件安装模块,其中,
具备:基板,该基板以元件主体的功能部侧面为上侧利用引线接合安装有在该功能部侧面上具有预定的功能部和在其周围的焊盘的功能元件;封装件结构构件,具有与所述功能元件对应的孔部,
在所述功能元件的焊盘和所述引线接合用的引线的一部分露出的状态下,由密封树脂密封该功能元件,并且,所述封装件结构构件由该密封树脂固定在所述基板上。
7.根据权利要求6的功能元件安装模块,其中,
在所述封装件结构构件上设置有覆盖所述孔部的保护用覆盖构件,在该保护用覆盖构件上设置有与所述功能元件的功能部上的空间连通的排气口。
8.根据权利要求6的功能元件安装模块,其中,
在所述封装件结构构件上设置有覆盖所述孔部的保护用覆盖构件,在所述封装件结构构件和所述保护用覆盖构件之间设置有与所述功能元件的功能部上的空间连通的排气口。
9.根据权利要求6的功能元件安装模块,其中,
在所述封装件结构构件上设置有覆盖所述孔部的保护用覆盖构件,该保护用覆盖构件是能够从所述封装件结构构件剥离的保护膜。
CN2007800116133A 2006-03-02 2007-03-01 功能元件安装模块及其制造方法 Expired - Fee Related CN101410989B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006056141A JP3940423B1 (ja) 2006-03-02 2006-03-02 機能素子実装モジュール及びその製造方法
JP056141/2006 2006-03-02
PCT/JP2007/053903 WO2007100037A1 (ja) 2006-03-02 2007-03-01 機能素子実装モジュール及びその製造方法

Publications (2)

Publication Number Publication Date
CN101410989A true CN101410989A (zh) 2009-04-15
CN101410989B CN101410989B (zh) 2010-09-01

Family

ID=38305975

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800116133A Expired - Fee Related CN101410989B (zh) 2006-03-02 2007-03-01 功能元件安装模块及其制造方法

Country Status (6)

Country Link
US (2) US7812264B2 (zh)
JP (1) JP3940423B1 (zh)
KR (1) KR101023329B1 (zh)
CN (1) CN101410989B (zh)
HK (1) HK1129770A1 (zh)
WO (1) WO2007100037A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108735890A (zh) * 2018-05-25 2018-11-02 张琴 准气密性声表面波元件封装结构及制作方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009176894A (ja) * 2008-01-23 2009-08-06 Panasonic Corp 光学半導体装置
JP2010075824A (ja) * 2008-09-25 2010-04-08 Sony Corp 液体塗布装置および液体塗布ノズル
JP5604897B2 (ja) * 2010-02-18 2014-10-15 セイコーエプソン株式会社 光デバイスの製造方法、光デバイス及び生体情報検出器
WO2012165647A1 (en) * 2011-06-01 2012-12-06 Canon Kabushiki Kaisha Semiconductor device
US9142695B2 (en) 2013-06-03 2015-09-22 Optiz, Inc. Sensor package with exposed sensor array and method of making same
US9996725B2 (en) 2016-11-03 2018-06-12 Optiz, Inc. Under screen sensor assembly
DE102016224083A1 (de) * 2016-12-02 2018-06-07 Robert Bosch Gmbh Elektrische Baugruppe
US10872915B2 (en) * 2019-01-22 2020-12-22 Advanced Semiconductor Engineering, Inc. Optical package structure and method for manufacturing the same
DE102019104986A1 (de) * 2019-02-27 2020-08-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
WO2022020257A1 (en) * 2020-07-20 2022-01-27 Apple Inc. Photonic integrated circuits with controlled collapse chip connections

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3602777A (en) * 1970-04-21 1971-08-31 Westinghouse Electric Corp Silicon carbide semiconductor device with heavily doped silicon carbide ohmic contacts
JPS6132535A (ja) * 1984-07-25 1986-02-15 Sanyo Electric Co Ltd センサの製造方法
JPH0782273B2 (ja) 1986-09-17 1995-09-06 株式会社リコー 定着装置
JPH01176954U (zh) * 1988-06-01 1989-12-18
GB8911607D0 (en) * 1989-05-19 1989-07-05 Emi Plc Thorn A method of encapsulation for electronic devices and devices so encapsulated
JPH03225867A (ja) 1990-01-31 1991-10-04 Hitachi Ltd 固体撮像装置
JPH05335534A (ja) * 1992-05-27 1993-12-17 Canon Inc 光半導体デバイス
US5491361A (en) * 1994-10-14 1996-02-13 The Aerospace Corporation Hydrogen out venting electronic package
WO1997002596A1 (fr) * 1995-06-30 1997-01-23 Kabushiki Kaisha Toshiba Composant electronique et son procede de fabrication
US5962810A (en) * 1997-09-09 1999-10-05 Amkor Technology, Inc. Integrated circuit package employing a transparent encapsulant
JPH11214754A (ja) * 1998-01-28 1999-08-06 Rohm Co Ltd 半導体発光装置
JP4372241B2 (ja) * 1998-08-05 2009-11-25 パナソニック株式会社 固体撮像装置の製造方法
US5982621A (en) * 1998-11-23 1999-11-09 Caesar Technology Inc. Electronic device cooling arrangement
JP3724979B2 (ja) * 1999-04-27 2005-12-07 富士通株式会社 半導体装置
JP2001250889A (ja) * 2000-03-06 2001-09-14 Matsushita Electric Ind Co Ltd 光素子の実装構造体およびその製造方法
JP2002134762A (ja) * 2000-10-19 2002-05-10 Shinko Electric Ind Co Ltd 光学装置及びその製造方法
TW473951B (en) * 2001-01-17 2002-01-21 Siliconware Precision Industries Co Ltd Non-leaded quad flat image sensor package
JP2003068939A (ja) * 2001-08-29 2003-03-07 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2003101063A (ja) * 2001-09-20 2003-04-04 Sony Corp 複合光学素子、受光素子装置及び複合光学素子の製造方法
DE10229067B4 (de) * 2002-06-28 2007-08-16 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
US20060055056A1 (en) * 2003-11-21 2006-03-16 Denso Corporation Semiconductor equipment having a pair of heat radiation plates
US7061099B2 (en) * 2004-09-30 2006-06-13 Intel Corporation Microelectronic package having chamber sealed by material including one or more intermetallic compounds
US20070096280A1 (en) * 2005-11-01 2007-05-03 Tu Hsiu W Image sensor module structure and a method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108735890A (zh) * 2018-05-25 2018-11-02 张琴 准气密性声表面波元件封装结构及制作方法

Also Published As

Publication number Publication date
US8474134B2 (en) 2013-07-02
JP2007234949A (ja) 2007-09-13
CN101410989B (zh) 2010-09-01
US20100175247A1 (en) 2010-07-15
US7812264B2 (en) 2010-10-12
WO2007100037A1 (ja) 2007-09-07
HK1129770A1 (en) 2009-12-04
US20090038843A1 (en) 2009-02-12
KR101023329B1 (ko) 2011-03-18
KR20080112260A (ko) 2008-12-24
JP3940423B1 (ja) 2007-07-04

Similar Documents

Publication Publication Date Title
CN101410989B (zh) 功能元件安装模块及其制造方法
EP1801888A1 (en) Function element mounting module and manufacturing method thereof
EP0872748B1 (en) Method for hermetically sealing optical fiber feedthrough and hermetically sealed structure
KR100231118B1 (ko) 패키지
JP4793099B2 (ja) 光モジュール
US6786654B2 (en) Encapsulated optical fiber end-coupled device
US8399897B2 (en) Optical device package
US20110115036A1 (en) Device packages and methods of fabricating the same
JP5946520B2 (ja) オプトエレクトロニクス装置及びオプトエレクトロニクス装置の製造方法
US20090127690A1 (en) Package and Manufacturing Method for a Microelectronic Component
JP2003528440A (ja) 電子パッケージを密封する方法及び装置
JP4782522B2 (ja) 光機能素子パッケージ及びその製造方法
JP2008092417A (ja) 半導体撮像素子およびその製造方法並びに半導体撮像装置および半導体撮像モジュール
JP2006245382A (ja) 機能素子実装モジュール及び機能素子実装モジュールの実装方法
CN100585880C (zh) 功能元件安装模块及其制造方法
JP2005286284A (ja) 機能素子実装モジュール並びに光機能素子実装モジュール及びその製造方法
JP2007300032A (ja) 光モジュール及びその製造方法
JP2011159692A (ja) 電子装置、および、電子装置の製造方法
JP2009111205A (ja) 中空パッケージ、その製造方法及び組立方法、並びに、撮像装置
JP2009081303A (ja) 半導体装置およびその製造方法
JP2008182026A (ja) 機能素子実装モジュールの製造方法
JP2003161865A (ja) 樹脂封止光モジュール
JP2004138902A (ja) 光素子収納用パッケージおよび光モジュール

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1129770

Country of ref document: HK

C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: GR

Ref document number: 1129770

Country of ref document: HK

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100901

Termination date: 20170301