HK1129770A1 - Function element mounting module and method for manufacturing same - Google Patents
Function element mounting module and method for manufacturing sameInfo
- Publication number
- HK1129770A1 HK1129770A1 HK09107184.2A HK09107184A HK1129770A1 HK 1129770 A1 HK1129770 A1 HK 1129770A1 HK 09107184 A HK09107184 A HK 09107184A HK 1129770 A1 HK1129770 A1 HK 1129770A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- element mounting
- function element
- manufacturing same
- mounting module
- module
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49007—Indicating transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006056141A JP3940423B1 (ja) | 2006-03-02 | 2006-03-02 | 機能素子実装モジュール及びその製造方法 |
PCT/JP2007/053903 WO2007100037A1 (ja) | 2006-03-02 | 2007-03-01 | 機能素子実装モジュール及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1129770A1 true HK1129770A1 (en) | 2009-12-04 |
Family
ID=38305975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK09107184.2A HK1129770A1 (en) | 2006-03-02 | 2009-08-05 | Function element mounting module and method for manufacturing same |
Country Status (6)
Country | Link |
---|---|
US (2) | US7812264B2 (zh) |
JP (1) | JP3940423B1 (zh) |
KR (1) | KR101023329B1 (zh) |
CN (1) | CN101410989B (zh) |
HK (1) | HK1129770A1 (zh) |
WO (1) | WO2007100037A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009176894A (ja) * | 2008-01-23 | 2009-08-06 | Panasonic Corp | 光学半導体装置 |
JP2010075824A (ja) * | 2008-09-25 | 2010-04-08 | Sony Corp | 液体塗布装置および液体塗布ノズル |
JP5604897B2 (ja) * | 2010-02-18 | 2014-10-15 | セイコーエプソン株式会社 | 光デバイスの製造方法、光デバイス及び生体情報検出器 |
WO2012165647A1 (en) * | 2011-06-01 | 2012-12-06 | Canon Kabushiki Kaisha | Semiconductor device |
US9142695B2 (en) * | 2013-06-03 | 2015-09-22 | Optiz, Inc. | Sensor package with exposed sensor array and method of making same |
US9996725B2 (en) | 2016-11-03 | 2018-06-12 | Optiz, Inc. | Under screen sensor assembly |
DE102016224083A1 (de) * | 2016-12-02 | 2018-06-07 | Robert Bosch Gmbh | Elektrische Baugruppe |
CN108735890A (zh) * | 2018-05-25 | 2018-11-02 | 张琴 | 准气密性声表面波元件封装结构及制作方法 |
US10872915B2 (en) * | 2019-01-22 | 2020-12-22 | Advanced Semiconductor Engineering, Inc. | Optical package structure and method for manufacturing the same |
DE102019104986A1 (de) * | 2019-02-27 | 2020-08-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
WO2022020257A1 (en) * | 2020-07-20 | 2022-01-27 | Apple Inc. | Photonic integrated circuits with controlled collapse chip connections |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
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US3602777A (en) * | 1970-04-21 | 1971-08-31 | Westinghouse Electric Corp | Silicon carbide semiconductor device with heavily doped silicon carbide ohmic contacts |
JPS6132535A (ja) * | 1984-07-25 | 1986-02-15 | Sanyo Electric Co Ltd | センサの製造方法 |
JPH0782273B2 (ja) | 1986-09-17 | 1995-09-06 | 株式会社リコー | 定着装置 |
JPH01176954U (zh) * | 1988-06-01 | 1989-12-18 | ||
GB8911607D0 (en) * | 1989-05-19 | 1989-07-05 | Emi Plc Thorn | A method of encapsulation for electronic devices and devices so encapsulated |
JPH03225867A (ja) | 1990-01-31 | 1991-10-04 | Hitachi Ltd | 固体撮像装置 |
JPH05335534A (ja) * | 1992-05-27 | 1993-12-17 | Canon Inc | 光半導体デバイス |
US5491361A (en) * | 1994-10-14 | 1996-02-13 | The Aerospace Corporation | Hydrogen out venting electronic package |
EP0840369A4 (en) * | 1995-06-30 | 2001-12-19 | Toshiba Kk | ELECTRONIC COMPONENT AND ITS MANUFACTURING METHOD |
US5962810A (en) * | 1997-09-09 | 1999-10-05 | Amkor Technology, Inc. | Integrated circuit package employing a transparent encapsulant |
JPH11214754A (ja) * | 1998-01-28 | 1999-08-06 | Rohm Co Ltd | 半導体発光装置 |
JP4372241B2 (ja) * | 1998-08-05 | 2009-11-25 | パナソニック株式会社 | 固体撮像装置の製造方法 |
US5982621A (en) * | 1998-11-23 | 1999-11-09 | Caesar Technology Inc. | Electronic device cooling arrangement |
JP3724979B2 (ja) * | 1999-04-27 | 2005-12-07 | 富士通株式会社 | 半導体装置 |
JP2001250889A (ja) * | 2000-03-06 | 2001-09-14 | Matsushita Electric Ind Co Ltd | 光素子の実装構造体およびその製造方法 |
JP2002134762A (ja) * | 2000-10-19 | 2002-05-10 | Shinko Electric Ind Co Ltd | 光学装置及びその製造方法 |
TW473951B (en) * | 2001-01-17 | 2002-01-21 | Siliconware Precision Industries Co Ltd | Non-leaded quad flat image sensor package |
JP2003068939A (ja) * | 2001-08-29 | 2003-03-07 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2003101063A (ja) * | 2001-09-20 | 2003-04-04 | Sony Corp | 複合光学素子、受光素子装置及び複合光学素子の製造方法 |
DE10229067B4 (de) * | 2002-06-28 | 2007-08-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
CN1332442C (zh) * | 2003-11-21 | 2007-08-15 | 株式会社电装 | 具有一对散热片的半导体装置 |
US7061099B2 (en) * | 2004-09-30 | 2006-06-13 | Intel Corporation | Microelectronic package having chamber sealed by material including one or more intermetallic compounds |
US20070096280A1 (en) * | 2005-11-01 | 2007-05-03 | Tu Hsiu W | Image sensor module structure and a method for manufacturing the same |
-
2006
- 2006-03-02 JP JP2006056141A patent/JP3940423B1/ja not_active Expired - Fee Related
-
2007
- 2007-03-01 KR KR1020087024060A patent/KR101023329B1/ko not_active IP Right Cessation
- 2007-03-01 CN CN2007800116133A patent/CN101410989B/zh not_active Expired - Fee Related
- 2007-03-01 WO PCT/JP2007/053903 patent/WO2007100037A1/ja active Application Filing
-
2008
- 2008-09-02 US US12/230,602 patent/US7812264B2/en not_active Expired - Fee Related
-
2009
- 2009-08-05 HK HK09107184.2A patent/HK1129770A1/xx not_active IP Right Cessation
-
2010
- 2010-03-19 US US12/659,740 patent/US8474134B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101023329B1 (ko) | 2011-03-18 |
US20100175247A1 (en) | 2010-07-15 |
WO2007100037A1 (ja) | 2007-09-07 |
JP2007234949A (ja) | 2007-09-13 |
JP3940423B1 (ja) | 2007-07-04 |
KR20080112260A (ko) | 2008-12-24 |
CN101410989A (zh) | 2009-04-15 |
CN101410989B (zh) | 2010-09-01 |
US20090038843A1 (en) | 2009-02-12 |
US7812264B2 (en) | 2010-10-12 |
US8474134B2 (en) | 2013-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20170301 |