CN101405844A - 用于以高选择性刻蚀电介质阻挡层的方法 - Google Patents

用于以高选择性刻蚀电介质阻挡层的方法 Download PDF

Info

Publication number
CN101405844A
CN101405844A CNA2007800101903A CN200780010190A CN101405844A CN 101405844 A CN101405844 A CN 101405844A CN A2007800101903 A CNA2007800101903 A CN A2007800101903A CN 200780010190 A CN200780010190 A CN 200780010190A CN 101405844 A CN101405844 A CN 101405844A
Authority
CN
China
Prior art keywords
gas
dielectric barrier
dielectric
flowed
admixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800101903A
Other languages
English (en)
Chinese (zh)
Inventor
肖莹
格拉多·A·戴戈迪诺
卡斯特恩·施奈德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101405844A publication Critical patent/CN101405844A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNA2007800101903A 2006-03-22 2007-03-16 用于以高选择性刻蚀电介质阻挡层的方法 Pending CN101405844A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/388,246 2006-03-22
US11/388,246 US7977245B2 (en) 2006-03-22 2006-03-22 Methods for etching a dielectric barrier layer with high selectivity

Publications (1)

Publication Number Publication Date
CN101405844A true CN101405844A (zh) 2009-04-08

Family

ID=38523179

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800101903A Pending CN101405844A (zh) 2006-03-22 2007-03-16 用于以高选择性刻蚀电介质阻挡层的方法

Country Status (6)

Country Link
US (2) US7977245B2 (enExample)
EP (1) EP2008298A2 (enExample)
JP (1) JP2009530871A (enExample)
KR (1) KR101083211B1 (enExample)
CN (1) CN101405844A (enExample)
WO (1) WO2007109522A2 (enExample)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
CN102832118B (zh) * 2012-09-11 2015-02-18 上海华力微电子有限公司 双大马士革结构中底部抗反射涂层的刻蚀方法
US9390937B2 (en) * 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US20150050816A1 (en) * 2013-08-19 2015-02-19 Korea Atomic Energy Research Institute Method of electrochemically preparing silicon film
KR20150107756A (ko) * 2013-11-06 2015-09-23 맷슨 테크놀로지, 인크. 수직 앤에이앤디 디바이스에 대한 새로운 마스크 제거 방법
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
KR102227883B1 (ko) 2016-12-14 2021-03-16 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 급속 열 활성화 공정과 함께 플라즈마를 이용하는 원자층 에칭 공정
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11728212B2 (en) * 2020-09-29 2023-08-15 Taiwan Semicondcutor Manufacturing Company, Ltd. Integrated circuit structure and manufacturing method thereof

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5950126A (en) 1996-12-03 1999-09-07 Nokia Telecommunications Oy Network operator controlled usage of long distance carriers
US6140226A (en) * 1998-01-16 2000-10-31 International Business Machines Corporation Dual damascene processing for semiconductor chip interconnects
US6147009A (en) * 1998-06-29 2000-11-14 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
AU1107400A (en) 1998-10-08 2000-04-26 Imo Industries, Inc. Universal joint for vehicle steering systems
US6137126A (en) * 1999-08-17 2000-10-24 Advanced Micro Devices, Inc. Method to reduce gate-to-local interconnect capacitance using a low dielectric constant material for LDD spacer
US6764958B1 (en) * 2000-07-28 2004-07-20 Applied Materials Inc. Method of depositing dielectric films
TW464977B (en) * 2000-11-03 2001-11-21 United Microelectronics Corp Method for peeling off silicon carbide layer
US6514850B2 (en) * 2001-01-31 2003-02-04 Applied Materials, Inc. Interface with dielectric layer and method of making
US20020177321A1 (en) * 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
US20020187627A1 (en) * 2001-06-06 2002-12-12 Yu-Shen Yuang Method of fabricating a dual damascene structure
JP3914452B2 (ja) * 2001-08-07 2007-05-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US6743725B1 (en) * 2001-08-13 2004-06-01 Lsi Logic Corporation High selectivity SiC etch in integrated circuit fabrication
US7432207B2 (en) * 2001-08-31 2008-10-07 Tokyo Electron Limited Method for etching object to be processed
US6753260B1 (en) * 2001-10-05 2004-06-22 Taiwan Semiconductor Manufacturing Company Composite etching stop in semiconductor process integration
US6759327B2 (en) * 2001-10-09 2004-07-06 Applied Materials Inc. Method of depositing low k barrier layers
US6652712B2 (en) * 2001-12-19 2003-11-25 Applied Materials, Inc Inductive antenna for a plasma reactor producing reduced fluorine dissociation
US6790755B2 (en) * 2001-12-27 2004-09-14 Advanced Micro Devices, Inc. Preparation of stack high-K gate dielectrics with nitrided layer
US6713402B2 (en) * 2002-05-31 2004-03-30 Texas Instruments Incorporated Methods for polymer removal following etch-stop layer etch
US20030228768A1 (en) 2002-06-05 2003-12-11 Applied Materials, Inc. Dielectric etching with reduced striation
JP3616615B2 (ja) * 2002-06-06 2005-02-02 沖電気工業株式会社 半導体装置の製造方法
US7132369B2 (en) * 2002-12-31 2006-11-07 Applied Materials, Inc. Method of forming a low-K dual damascene interconnect structure
US6705886B1 (en) * 2003-01-23 2004-03-16 Fci Americas Technology, Inc. Electrical connector having connector position assurance member
JP2004235361A (ja) * 2003-01-29 2004-08-19 Nec Electronics Corp 半導体装置の製造方法および半導体製造装置
US6921727B2 (en) * 2003-03-11 2005-07-26 Applied Materials, Inc. Method for modifying dielectric characteristics of dielectric layers
JP2004296835A (ja) * 2003-03-27 2004-10-21 Applied Materials Inc ダマシン構造を形成する方法
US7309448B2 (en) * 2003-08-08 2007-12-18 Applied Materials, Inc. Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material
US20050059234A1 (en) * 2003-09-16 2005-03-17 Applied Materials, Inc. Method of fabricating a dual damascene interconnect structure
US7015133B2 (en) * 2004-04-14 2006-03-21 Taiwan Semiconductor Manufacturing Company Dual damascene structure formed of low-k dielectric materials
JP2007537602A (ja) * 2004-05-11 2007-12-20 アプライド　マテリアルズ　インコーポレイテッド フルオロカーボン化学エッチングにおけるｈ２添加物を使用しての炭素ドープ酸化ケイ素エッチング
US7288482B2 (en) * 2005-05-04 2007-10-30 International Business Machines Corporation Silicon nitride etching methods

Also Published As

Publication number Publication date
WO2007109522A2 (en) 2007-09-27
KR101083211B1 (ko) 2011-11-11
US20070224803A1 (en) 2007-09-27
KR20080106290A (ko) 2008-12-04
JP2009530871A (ja) 2009-08-27
EP2008298A2 (en) 2008-12-31
US7977245B2 (en) 2011-07-12
WO2007109522A3 (en) 2008-03-20
US20070224807A1 (en) 2007-09-27

Similar Documents

Publication Publication Date Title
CN101405844A (zh) 用于以高选择性刻蚀电介质阻挡层的方法
KR102185347B1 (ko) 보이드-프리 금속화를 가능하게 하도록 인-시츄 금속 하드 마스크 형상 제어를 위한 펄싱 유전체 에칭 프로세스
KR101896724B1 (ko) 배선 패터닝을 위한 하드 마스크 제거 중의 측벽 및 챔퍼 보호
US20060102197A1 (en) Post-etch treatment to remove residues
JP2002520853A (ja) 二重象眼のために特に有用な、誘電体多層構造のプラズマエッチプロセス
WO2003081645A2 (en) An integrated in-situ etch process performed in a multichamber substrate processing system
CN101405234A (zh) 用于在双镶嵌应用中蚀刻底部抗反射涂覆层的方法
WO2002073674A1 (fr) Procede permettant de graver un film isolant organique et procede double damascene
KR20140095031A (ko) 다중-층 필름 스택에서 자기-정렬 비아 및 트렌치를 에칭하는 방법
JP5232455B2 (ja) デュアルダマシン用途における下面反射防止コーティング層の２ステップエッチング
JP2007194284A (ja) プラズマ処理方法、プラズマ処理装置、及び記憶媒体
JP2015079797A (ja) 銅層をエッチングする方法
JP2007508697A (ja) 一酸化二窒素を使用したエッチバック方法
JP4827567B2 (ja) プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
JP2005005697A (ja) 半導体装置の製造方法
US20080203056A1 (en) Methods for etching high aspect ratio features
US7393795B2 (en) Methods for post-etch deposition of a dielectric film
US20090117745A1 (en) Methods for selectively etching a barrier layer in dual damascene applications
CN100423222C (zh) 用于检查等离子体处理系统中接触孔的方法和装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20090408