CN101405834A - 用于陶瓷mcm c4保护的新颖的可再加工的底部填充 - Google Patents

用于陶瓷mcm c4保护的新颖的可再加工的底部填充 Download PDF

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CN101405834A
CN101405834A CNA2007800095194A CN200780009519A CN101405834A CN 101405834 A CN101405834 A CN 101405834A CN A2007800095194 A CNA2007800095194 A CN A2007800095194A CN 200780009519 A CN200780009519 A CN 200780009519A CN 101405834 A CN101405834 A CN 101405834A
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composition
chip
blocking
siloxanes
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CN101405834B (zh
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J·T·科芬
S·P·奥斯特兰德
F·L·蓬佩奥
吴佳俐
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Core Usa Second LLC
GlobalFoundries Inc
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Abstract

本发明提供了包含电子器件的芯片，例如多芯片陶瓷模块(MCM)(10)，所述多芯片陶瓷模块(10)包括在基底15上的多个芯片(1 Ia－I Ii)，使用可再加工的组合物(16)来底部填充芯片，所述可再加工的组合物(16)允许从装置去除或替换一个或多个芯片。所述可再加工的组合物包含基础树脂与直链可固化成分或优选的直链可固化成分的组合，所述基础树脂是非交联性的并形成基体，所述可固化成分是交联性的并在固化时在所述基础树脂基体中形成交联的域。使用适宜的交联催化剂例如Pt，和可选的填充物优选硅烷表面处理的硅。优选的基础树脂是直链聚二甲基硅氧烷并且优选的可固化成分是乙烯基封端的直链聚二甲基硅氧烷和氢封端的直链聚二甲基硅氧烷。

Description

用于陶瓷MCM C4保护的新颖的可再加工的底部填充
技术领域
本发明涉及包含电子器件的芯片，并且特别地涉及多芯片陶瓷模块(MCM)，所述MCM包含通过焊料凸起电连接到基底的多个芯片，使用可再加工的组合物来底部填充芯片，该可再加工的组合物允许从模块去除或替换一个或多个芯片。
背景技术
例如多芯片陶瓷模块(MCM)的电子部件是用于许多高端计算机服务器和主框架的关键部件。MCM特别重要，因为它们包含在基底上的许多芯片。然而，如果芯片之一由于电问题而有缺陷，则必须替换它。在没有能力替换芯片的情况下，通常称为芯片的在加工，MCM的成本变得可以抑制。
可控坍塌芯片连接是国际商业机器公司(IBM)所开发的作为布线接合的替代物的互连技术。该技术通常称为C4技术或倒装芯片封装。广泛而言，将一个或多个集成电路芯片安装在单或多层基底之上，并且每个芯片上的衬垫通过例如焊料凸起的多个电连接而电连接到基底上对应的衬垫。可以通过焊料凸起阵列例如10×10阵列将集成电路芯片装配在基底上。然后，典型地通过插头(pin)连接器将芯片凸起的基底电连接到另一电子装置例如电路板，在电子装置例如计算机中使用整个封装。
在美国专利No.5,191,404中描述了倒装芯片封装，通过引用将其结合于此。一般地，倒装芯片接合是许多应用所需要的，因为将芯片接合到基底所需要的足印(footprint)或面积等于芯片自身的面积。倒装芯片接合还开发了相对小的焊料凸起，其典型地测量约1mil至1.5mil的高度和约2至4mil宽度以将芯片上的衬垫接合到基底上对应的衬垫。通过在升高的温度下回流以同时形成电和机械互连。C4接合方法是自对准的，因为焊料的湿润作用将芯片的凸起图形对准对应的基底衬垫。该作用补偿了在芯片设置期间可以发生的达到几个mil的芯片到衬底的未对准。
在接合的倒装芯片封装中，由每个表面上的衬垫的厚度和衬垫之间的焊料凸起连接而产生的在集成电路芯片的包含衬垫的表面与接合的基底的包含衬垫的表面之间的开口或空间是必须的。该开口空间不能被容忍，因为对焊料凸起连接的任何干扰都将不利地影响封装的性能。例如，来自于腐蚀性环境或来自用于增加从芯片的热传导的热糊的注入的湿气、移动离子、酸或碱种(species)、以及归因于焊料凸起电连接的可能的损坏的芯片的机械完整性都是严重的问题。为了解决这些问题，典型地使用各种类型的材料例如液体完全封装接合的集成电路芯片和基底的焊料凸起，并且围绕芯片边缘使用这样的密封剂以密封接合的开口。
倒装芯片接合在电子制造中提供了许多优点，最重要的一个是能够去除或替换芯片而不毁坏基底和相邻的芯片。通过加热和从基底提升芯片来去除芯片并且典型地使用新芯片来替换被称为再加工，并且可以进行多次上述过程而不会劣化再加工的电子组件的质量或可靠性。
然而，倒装芯片封装的密封存在再加工和其他问题。倒装芯片封装必须是可靠的，并且必须最小化密封剂、芯片、基底和/或焊料凸起之间的热机械失配以避免封装特别是焊接互连的应力和损坏。密封还必须能够被加热并被软化，或者优选地在用于剥离(再加工)工序的例如二甲苯的溶剂中是可溶解的。
密封接合到基底表面的单芯片之间的空间的常规底部填充方法典型地将底部填充材料施加到将被底部填充的芯片的周边。毛细作用将底部填充密封材料吸引到芯片与基底之间的空间以在芯片与基底之间形成无空隙的填充空间。
历史上，存在两种MCM密封来保护芯片不受损害，即，气密(hermetic)密封和非气密密封以防止湿气渗入和移动离子进入到芯片连接。根据金属等温内扩散机制形成大多数气密密封例如C环密封。非气密密封还被称为无气密性可靠性(RWOH)，使用基于聚合物的复合材料以形成非气密密封带。与气密密封相比，非气密密封对湿气进入和移动离子渗入提供了较少的保护。因此，非气密密封的MCM在实际应用期间当暴露到温度和潮湿环境中时示出了各种水平的C4侵蚀。
然而，在不考虑典型密封的情况下，必须底部填充芯片，并且理想的可再加工的底部填充(RUF)应该具有几个关键特性例如可再加工、低模数、热稳定性，不干扰周围材料例如热糊、与用于密封MCM的密封带或C-环是兼容的，并是环境安全的。而且，RUF应该在中性溶液中是可再加工的，以防止对C4互连的任何化学攻击；具有引入热机械应力的低深热循环；在125℃下1000小时是热和化学稳定的；以及提供足够的保护来防止湿气、CO2侵入和羧酸渗入。
发明内容
牢记现有技术的问题和缺陷，因而，本发明的目的是提供一种可再加工的底部填充和/或坝(dam)(周边密封)组合物用于保护MCM C4/焊料互连不被侵蚀并用于制造包含例如MCM的部件的芯片。
本发明的另一目的是提供一种用于使用可再加工的底部填充和/或坝组合物来底部填充芯片和/或在例如MCM的电子部件上形成坝(周围密封)的方法。
通过说明，本发明的又一目的和优点将部分地明显或显而易见。
在本发明中可以实现将对本领域的技术人员显而易见的上述和其他目的，本发明涉及用于例如陶瓷MCM的C4连接保护的可再加工的底部填充和/或坝组合物，其包括：
包含非反应基团的非交联性或低交联性基础树脂，例如聚二甲基硅氧烷；
直链交联性成分优选具有反应端基团的直链或支链的反应硅氧烷，例如乙烯基封端的聚二甲基硅氧烷和/或氢封端的聚二甲基硅氧烷；
用于例如乙烯基封端的聚二甲基硅氧烷和/或氢封端的聚二甲基硅氧烷的反应硅氧烷的催化剂，所述催化剂优选环乙烯基硅氧烷中的Pt；以及
可选的填充物，例如硅烷处理的填充物优选硅石。
上述硅树脂系统是优选的可施加的材料系统。下面进一步描述其他系统，但是为了便利和其论证的有效性，下面的描述将涉及硅树脂系统。
本发明的另一方面提供了一种底部填充和/或形成用于陶瓷MCM和其具有C4焊料连接的电子部件的坝的方法，包括以下步骤：
提供例如具有C4焊料连接的陶瓷MCM的基底；
使用可再加工的底部填充组合物来底部填充所述接合的芯片和/或在所述芯片周围形成坝，所述可再加工的底部填充组合物包括：
包含非反应基团的非交联性或低交联性基础树脂，例如聚二甲基硅氧烷；
直链交联性成分优选具有反应端基团的直链或支链的反应硅氧烷，例如乙烯基封端的聚二甲基硅氧烷和/或氢封端的聚二甲基硅氧烷；
用于例如乙烯基封端的聚二甲基硅氧烷和/或氢封端的聚二甲基硅氧烷的反应硅氧烷的催化剂，所述催化剂优选环乙烯基硅氧烷中的Pt；以及
可选的填充物，例如硅烷处理的填充物优选硅石；
固化所述底部填充和/或筑坝的MCM；以及
如果需要，这样再加工所述底部填充的电子部件：去除所述底部填充组合物和/或坝组合物，将所述芯片从MCM分离，并通过将芯片结合到所述MCM并优选地使用上述组合物底部填充和筑坝接合的芯片来替换所述芯片。
附图说明
所附权利要求具体阐述了被认为新颖的本发明的特征和本发明的部件特性。附图仅仅用于示例的目的而未按比例绘制。然而，可以参考详细的描述并结合附图来最好地理解关于组织和操作方法的本发明本身，其中：
图1是MCM电子部件的平面图；
图2是图1的MCM的局部视图，其包括集成电路芯片，该集成芯片包含衬垫和焊料凸起，该芯片将被电连接到互连基底上的对应衬垫；以及
图3是在将芯片接合到基底上之后沿着图2的线3-3取得的截面视图，示出了使用底部填充和坝组合物密封芯片和基底电互连。
具体实施方式
在描述本发明的优选实施例时，在此参考附图的图1-3，其中相似的标号表示本发明的相似的特征。
主题发明提供了可再加工的底部填充和坝组合物优选基于硅树脂的软的可再加工的底部填充组合物(S-RUF)，其具有优良的芯片保护特性和再加工特征。底部填充组合物可以在室温下的二甲苯中去除；模数与100cSt一样低；在180℃以上是热稳定的；与ATC矿物油没有化学作用；以及环境保护PbSn C4。更重要地，过简单地将模块浸泡在室温二甲苯、IPA或酮中，二甲苯是优选的，或使用上述溶剂来旋喷，可以有效地从50-60微米的微米级C4间隙去除可再加工类型的底部填充。
用作RUF的基础树脂的有机的或聚合材料是非反应性的(非交联性的)并包括但不局限于没有或具有低的交联性能的聚硅氧烷例如优选的直链聚二甲基硅氧烷、聚氨基甲酸酯、矿物油、聚丙烯酸盐(polyacrylate)、聚丙烯酸酯、CTBN(羧基封端的丁二烯-丙烯腈)改性的聚酯、聚苯乙烯、异戊二烯、环氧改性的硅氧烷等。基础树脂用于形成用于可固化聚合物的基体(matrix)，该可固化聚合物反应形成在基础树脂基体中嵌入的交联聚合物。非反应性意思为基础树脂在正常的交联条件下是非交联性的，例如基础树脂不包含反应基团例如乙烯基、H、羟基、羧酸等，但却包含非反应基团例如甲基、乙荃、苯甲基、异丙基等。
RUF组合物还包括至少一个并且优选两个直链交联性的(可固化或反应的)成分，例如乙烯基封端的直链或支链的硅氧烷和氢封端的直链或支链的硅氧烷。可固化的其他的聚合物和单体成分包括酯封端的和碳环形酐封端的、或乙烯基封端的直链或支链的烷烃；非环式或丙烯酸酯；酯、氰基、酐、酰胺、乙烯基、封端的CTBN、脂族(alphatic)或芳族的酐、聚酰胺、聚酰亚胺、聚氨基甲酸酯等。
可固化的催化剂，优选使用在环乙烯基硅氧烷中的Pt来固化交联性的聚合物。H2PtC16、Pt(C6H5)2、ZnO等，还优选用于硅树脂系统的无机催化剂。过氧化物、胺和金属螯合物例如Co(AcAc)2还可以用作环氧、丙烯酸、聚氨基甲酸酯和聚苯乙烯基础树脂系统中的催化剂。
优选在组合物中使用填充物例如硅烷处理的硅石填充物以提供坝组合物，使用该坝组合物用于围绕底部填充的芯片(周边)，但是填充物还可以用在底部填充组合物中。氮化硼、碳纤维、纳米硅石、纳米碳管、氧化铝等和非导电填充物同样适用于该应用。
使用用于芯片接合的任何方法来制造MCM或任何其他的电子部件。后芯片接合和测试，使用本发明的组合物来底部填充和/或筑坝芯片。随后是底部填充和/或坝固化，模块通过标准装配和测试。如果需要再加工，则分解模块，去除密封剂和底部填充、替换缺陷芯片、重新底部填充新的芯片并重新装配模块。
在其间没有保护绝缘材料的情况下，在偏置的情况下，当将包含铅或无铅的C4互连(焊料)暴露于湿气、移动离子时，很可能会发生电化学引起的化学腐蚀。如果存在外来的(alien)腐蚀化学种例如己二酸、硬脂酸和在ATC糊热退化期间形成的其他类型的有机酸和/或电化学腐蚀可以极大地被加速。因而，为了保持湿气、移动离子以及外来的羧酸低于引起腐蚀的水平，需要保护性材料底部填充C4连接。
更重要地，作为工艺技术继续收缩，引起单粒子翻转(SEU)所要求的临界电荷比存储单元中的电荷收集区域减小得快。因此，在使用较小的几何图形例如90nm的情况下，更关注软错误。
在工艺级，使用较纯的封装材料可以降低α发射。然而，需要极大的努力来减少用于当前玻璃陶瓷(GC)原材料的放射性元素水平。GC制造方法例如球磨机和内部陶瓷浆配方，和顶表面冶金(TSM)C4镀敷很可能会引入α粒子。因此，需要高纯度低α粒子底部填充以保护C4芯片不被α粒子辐射损坏。
为了满足上述所有要求，可再加工的底部填充是高端MCM的最容易且最低成本的解决方案。
参考图1，MCM电子部件的平面图被示为附图标记10。在基底15上示出了芯片11a-11i，并且通过C4连接将芯片电连接到基底。
现在参考图2和图3，示出电子部件10的集成电路芯片11b和互连基底15。示出了集成电路芯片11b具有在焊料凸起13之上的导电衬垫12。示出了在基底15上的对应的导电衬垫14。参考图3，图示了电子部件10的截面图，其中集成电路芯片11b被焊料连接到互连基底15。通过例如焊料凸起的多个焊料连接13，使用C4或倒装芯片封装将芯片11b电连接到基底15。基底15的下表面可以包含连接器例如插头连接器23以便将基底15连接到另一电子装置例如电路板。
通过示出为填充在芯片11b的包含衬垫的表面17与基底15的包含衬垫的表面18之间的空间19的本发明的组合物16来密封图3所示的电子部件10的焊料互连13。示出了密封剂16在芯片11周围并在芯片之下完全密封所有的焊料凸起13连接。示出了坝100围绕底部填充16。坝优选是与底部填充组合物16相同的组合物，除了其优选包含填充物例如硅烷处理的硅石填充物成分之外。
本发明的可再加工的组合物包括直链热塑性基础聚合物优选聚(二甲基硅氧烷)(PDMS)、优选包括具有反应性端基团的硅氧烷例如含乙烯基封端的PDMS和/或含氢封端的PDMS的直链固化剂、固化催化剂以及可选的填充物。
优选的PDMS可以通过下面的公式和结构来表示
Me3SiO-(Me2SiO)n-SiMe3
其中n是10到2760(MW 1250-204,000)
Figure A20078000951900111
乙烯基封端的PDMS可以通过以下公式和结构来表示：
H2C＝HC-Me2SiO-(Me2SiO)n-SiMe2-CH＝CH2
Figure A20078000951900121
其中n为2至5000。
氢封端的PDMS可以通过公式和结构表示：
H-Me2SiO-(Me2SiO)n-SiMe2-H
其中n为2至5000。
当固化包含乙烯基封端的和氢封端的硅氧烷的组合物时，获得例如下列结构的结构：
将该结构嵌入到基础树脂基体中形成具有优良的可再加工性能的底部填充。
本领域的技术人员应该意识到，当固化时本发明的底部填充和坝组合物在基础树脂基体中形成高交联的领域，固化的组合物具有优秀的可再加工特性。具体而言，固化的组合物在二甲苯中是高度可溶的，并且如果需要替换芯片，则可以容易地通过在二甲苯或其他适当的溶剂中浸泡模块或芯片来去除底部填充。可以在室温下的二甲苯中去除可再加工的底部填充，并且一旦去除，可以通过加热熔化焊料互连来从基底上去除芯片。然后，可以修整和清洁基底以提供清洁的C4衬垫位置以便新的芯片可以重新接合到其上。
基础聚合物形成了用于底部填充的基体并且掺杂(混合)有反应性的硅氧烷。当固化时，反应性的硅氧烷反应并且交联以在非反应性基础聚合物基体中形成高交联域，所述高交联域包括反应的和交联的反应性硅氧烷。交联域具有上述的特性且在室温下的二甲苯中可以容易地被去除。优选的硅氧烷基础聚合物优选具有约1250至204,000或更大的分子量。在组合物中仅需要使用固化剂中的一种，但是优选以1∶10至约10∶1的重量比率来使用乙烯基封端的硅氧烷和氢封端的硅氧烷固化剂。以基础树脂与固化剂的约20∶1至约1∶10，优选10∶1至1∶5的重量比率来使用基础树脂。固化催化剂以约0.001wt.％至5wt.％或更多的量存在于组合物中。如果在SRUF组合物中使用填充物，可以以约1wt.％至10wt.％或更多的量来使用。硅烷表面处理的硅石是优选的。
发现使用本发明的底部填充和/或坝组合物可以通过在二甲苯中溶解来提供优良的可再加工特性，本发明的底部填充和/或坝组合物是非化学相互反应的、非腐蚀性的并是商业上可接受的。连接到形成MCM的基底并底部填充有本发明的组合物的芯片可以容易地被这样的再加工：在室温下的二甲苯中溶解，熔化焊料互连，修整和清洁Cu阻挡的残余的焊料，和重新附着芯片，以及使用本发明的组合物来底部填充。
通过将成分混合在一起并底部填充芯片来使用底部填充组合物。然后，通过加热模块组件到80至150℃，优选100至125℃，30至120分钟，优选45至75分钟来反应组合物，由此固化底部填充的芯片
虽然已经结合特定的优选实施例具体描述了本发明，但是明显地，根据上述描述，许多替代、修改和变形将对本领域的技术人员显而易见。因此，旨在所附权利要求将包含落入本发明的真实范围和精神内的任何的这样的替代、修改和变形。
工业适用性
本发明发现了包含电子器件的芯片的效用。

Claims (19)

1.一种用于C4连接保护的可再加工的底部填充和坝组合物(16)包括：
包含非反应基团的非交联性和低交联性基础树脂中的至少一种；
至少一种直链交联性成分；
用于所述交联性成分的催化剂；以及
可选的填充物。
2.根据权利要求1所述的组合物，其中所述基础树脂是直链聚二甲基硅氧烷。
3.根据权利要求2所述的组合物，其中所述交联性成分是乙烯基封端的直链硅氧烷或氢封端的直链硅氧烷。
4.根据权利要求3所述的组合物，其中所述交联性成分是乙烯基封端的直链硅氧烷和氢封端的直链硅氧烷。
5.根据权利要求4所述的组合物，其中所述催化剂是环乙烯基硅氧烷中的Pt。
6.根据权利要求5所述的组合物，其中所述填充物是硅石。
7.根据权利要求6所述的组合物，其中所述填充物是硅烷表面处理的硅石。
8.根据权利要求1所述的组合物，其中所述基础树脂选自聚氨基甲酸酯、矿物油、聚丙烯酸盐、聚丙烯酸酯、CTBN改性的酯、聚苯乙烯、异戊二烯、环氧改性的硅氧烷、及其混合物。
9.根据权利要求8所述的组合物，其中所述交联性成分选自酯封端的、碳环形酐封端的、乙烯基封端的直链或支链的烷烃；非环式或丙烯酸酯；聚酰胺；聚酰亚胺和聚氨基甲酸酯。
10.一种用于具有C4连接的电子部件(10)的用于底部填充和形成坝的方法，包括以下步骤：
提供包含了电子部件(10)与C4焊料连接(13)的芯片(11b)；
使用可再加工的底部填充组合物(16)底部填充所述接合的芯片和在所述芯片周围形成坝(100)，所述可再加工的底部填充组合物(16)包括：
包括非反应基团的非交联性或低交联性基础树脂；
至少一种直链交联性成分；
用于所述交联性成分的催化剂；以及
可选的填充物；
固化底部填充的电子部件和筑坝的电子部件中的至少一个；以及
如果需要，这样再加工所述底部填充的电子部件：去除所述底部填充组合物和坝组合物中的至少一种，将芯片从MCM分离，并通过将芯片结合到所述电子部件并底部填充和筑坝接合的芯片来替换所述芯片。
11.根据权利要求10所述的方法，其中所述基础树脂是直链聚二甲基硅氧烷。
12.根据权利要求11所述的方法，其中所述交联性成分是乙烯基封端的直链硅氧烷或氢封端的直链硅氧烷。
13.根据权利要求12所述的方法，其中所述交联性成分是乙烯基封端的硅氧烷和氢封端的硅氧烷。
14.根据权利要求13所述的方法，其中所述催化剂是环乙烯基硅氧烷中的Pt。
15.根据权利要求14所述的方法，其中所述填充物是硅石。
16.根据权利要求15所述的方法，其中所述填充物是硅烷表面处理的硅石。
17.根据权利要求10所述的方法，其中所述基础树脂选自聚氨基甲酸酯矿物油、聚丙烯酸盐、聚丙烯酸酯、CTBN改性的酯、聚苯乙烯/异戊二烯、环氧改性的硅氧烷、及其混合物。
18.根据权利要求17所示的方法，其中所述交联性成分选自酯封端的、碳环形酐封端的、乙烯基封端的直链或支链的烷烃；非环式或丙烯酸酯；聚酰胺；聚酰亚胺和聚氨基甲酸酯。
19.根据权利要求10所述的方法，其中所述电子部件是多芯片陶瓷模块。
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