CN101393863A - 清洁半导体晶片的方法 - Google Patents
清洁半导体晶片的方法 Download PDFInfo
- Publication number
- CN101393863A CN101393863A CNA2008102151227A CN200810215122A CN101393863A CN 101393863 A CN101393863 A CN 101393863A CN A2008102151227 A CNA2008102151227 A CN A2008102151227A CN 200810215122 A CN200810215122 A CN 200810215122A CN 101393863 A CN101393863 A CN 101393863A
- Authority
- CN
- China
- Prior art keywords
- fluid film
- semiconductor wafer
- concentration
- hydrogen fluoride
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000004140 cleaning Methods 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 29
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 239000012530 fluid Substances 0.000 claims description 48
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 7
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 6
- 239000012498 ultrapure water Substances 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 2
- 238000009736 wetting Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 abstract description 41
- 239000010408 film Substances 0.000 description 28
- 239000000243 solution Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007044787A DE102007044787A1 (de) | 2007-09-19 | 2007-09-19 | Verfahren zum Reinigen einer Halbleiterscheibe |
DE102007044787.8 | 2007-09-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101393863A true CN101393863A (zh) | 2009-03-25 |
Family
ID=40384093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2008102151227A Pending CN101393863A (zh) | 2007-09-19 | 2008-09-01 | 清洁半导体晶片的方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090071507A1 (de) |
JP (1) | JP2009076908A (de) |
KR (1) | KR20090030204A (de) |
CN (1) | CN101393863A (de) |
DE (1) | DE102007044787A1 (de) |
SG (1) | SG151169A1 (de) |
TW (1) | TW200915405A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104624561A (zh) * | 2013-11-13 | 2015-05-20 | 东京毅力科创株式会社 | 基板清洗方法、基板清洗系统 |
CN107675263A (zh) * | 2017-09-15 | 2018-02-09 | 东方环晟光伏(江苏)有限公司 | 单晶硅金字塔结构绒面的优化方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2856196C (en) | 2011-12-06 | 2020-09-01 | Masco Corporation Of Indiana | Ozone distribution in a faucet |
WO2017112795A1 (en) | 2015-12-21 | 2017-06-29 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2760418B2 (ja) | 1994-07-29 | 1998-05-28 | 住友シチックス株式会社 | 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法 |
JP3575859B2 (ja) * | 1995-03-10 | 2004-10-13 | 株式会社東芝 | 半導体基板の表面処理方法及び表面処理装置 |
US6701941B1 (en) | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
US20020064961A1 (en) | 2000-06-26 | 2002-05-30 | Applied Materials, Inc. | Method and apparatus for dissolving a gas into a liquid for single wet wafer processing |
DE10036691A1 (de) * | 2000-07-27 | 2002-02-14 | Wacker Siltronic Halbleitermat | Verfahren zur chemischen Behandlung von Halbleiterscheiben |
US6989358B2 (en) * | 2002-10-31 | 2006-01-24 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for removal of photoresists |
JP4498893B2 (ja) * | 2004-11-11 | 2010-07-07 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
US7432177B2 (en) * | 2005-06-15 | 2008-10-07 | Applied Materials, Inc. | Post-ion implant cleaning for silicon on insulator substrate preparation |
-
2007
- 2007-09-19 DE DE102007044787A patent/DE102007044787A1/de not_active Ceased
-
2008
- 2008-07-30 KR KR1020080074518A patent/KR20090030204A/ko not_active Application Discontinuation
- 2008-08-18 SG SG200806116-0A patent/SG151169A1/en unknown
- 2008-08-27 US US12/199,124 patent/US20090071507A1/en not_active Abandoned
- 2008-09-01 CN CNA2008102151227A patent/CN101393863A/zh active Pending
- 2008-09-10 TW TW097134681A patent/TW200915405A/zh unknown
- 2008-09-17 JP JP2008237873A patent/JP2009076908A/ja not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104624561A (zh) * | 2013-11-13 | 2015-05-20 | 东京毅力科创株式会社 | 基板清洗方法、基板清洗系统 |
CN107675263A (zh) * | 2017-09-15 | 2018-02-09 | 东方环晟光伏(江苏)有限公司 | 单晶硅金字塔结构绒面的优化方法 |
Also Published As
Publication number | Publication date |
---|---|
SG151169A1 (en) | 2009-04-30 |
TW200915405A (en) | 2009-04-01 |
US20090071507A1 (en) | 2009-03-19 |
DE102007044787A1 (de) | 2009-04-02 |
KR20090030204A (ko) | 2009-03-24 |
JP2009076908A (ja) | 2009-04-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20090325 |
|
C20 | Patent right or utility model deemed to be abandoned or is abandoned |