CN101379590B - 用于单切晶片的支撑装置 - Google Patents

用于单切晶片的支撑装置 Download PDF

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CN101379590B
CN101379590B CN200780004238XA CN200780004238A CN101379590B CN 101379590 B CN101379590 B CN 101379590B CN 200780004238X A CN200780004238X A CN 200780004238XA CN 200780004238 A CN200780004238 A CN 200780004238A CN 101379590 B CN101379590 B CN 101379590B
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约翰·塔利
比利·迪金
理查德·F·托夫特尼斯
约翰·奥哈洛伦
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Abstract

一种在切割晶片10时和切割晶片10后支撑晶片芯片11的支撑基部或卡盘20。所述支撑基部包括岛21的阵列，该岛的上表面在支撑基部的主表面上凸出，用于与在晶片上的或者从晶片上单切的芯片的阵列对齐。所述岛之间的间隔不小于用于切割晶片的激光的切口，或者刀刃的宽度。为了激光切割，所述岛的上表面在所述主表面之上有足够的高度，使得用于切割晶片的激光束30的能量在岛之间的通道里被分散而基本不会加工所述支撑基部。

Description

用于单切晶片的支撑装置
技术领域
本发明涉及一种在将基片分割成芯片时用于基片的支撑装置，具体地涉及一种在将晶片基片单切(singulation)为独立的集成电路芯片时，特别是使用激光时，用于半导体晶片基片的支撑装置。
背景技术
在已知的用于使用芯片锯将半导体晶片分成单独的芯片的单切晶片过程中，所述晶片首先安装在由切割框架支撑的切割带(通常通过粘接层将晶片附着在其上的聚氯乙烯(PVC)或者聚烯烃材料)上，并且被添加至类似地安装的晶片堆中。接着，安装的晶片被切割锯装置中的处理系统从类似地安装的晶片堆中取出，并传送至在切割时用于支撑的平板状卡盘。随着自动化显示或基于操作者的对带有切割锯刃的晶片的芯片之间的晶片行距的对准，所述刃在X和Y方向上沿着所述晶片行距经由晶片的一侧至相反的一侧，其切穿晶片但是不穿过所述带。由此产生了通过粘合剂附着在由带框架支撑着的安装带上的独立芯片的阵列。
该具有单切芯片的带框架被传送至芯片拾取器，并且随着粘合剂的热或紫外线的释放，芯片销用于从带上推动芯片以允许通过芯片拾取器拾取单独的芯片。
最近，激光已经被用以替代机械式晶片锯来单切晶片，这样，激光切割过程适合一些类型的带，例如，聚烯烃带。
该已知过程存在一些缺陷。带和带框架的使用增加了单切过程的成本。薄晶片(厚度小于100微米的晶片)十分脆并且从晶片安装到芯片分离的处理中在晶片和独立芯片上施加巨大应力和应变。
本发明至少改善了现有技术的上述缺点。具体地，本发明避免了切割过程、尤其是基于激光的切割过程中对带的需要。
发明内容
根据本发明的第一个方面，提供了一种用于在切割晶片时和切割晶片后支撑该晶片的芯片的支撑基部，其特征在于：所述支撑基部包括岛阵列，该岛的上表面在所述支撑基部的主表面上凸出，用于与在所述晶片上的、或者从所述晶片上被单切的芯片的阵列对齐，其中所述岛之间的间隔不小于用于切割所述晶片的激光的切口，并且其中所述岛的上表面在所述主表面之上有足够的高度，使得用于切割所述晶片的激光束的能量在所述岛之间的通道里消散而基本不会加工所述支撑基部。
方便地，在所述主表面以上的所述岛的所述上表面的高度比所述激光束的聚焦深度更大。
有利地，所述支撑基部是真空卡盘，使得可通过局部真空将所述芯片保持在所述支撑基部上。
方便地，在切割后所述芯片可通过所述局部真空被保持在所述支撑基部上，用于随后的加工。
可选地，所述支撑基部是中空的以支撑半导体晶片，其中将该半导体晶片的活性表面朝向所述支撑基部。
对于本发明地第二个方面，提供了一种切割晶片的方法，其特征在于包括以下步骤：提供激光束；提供支撑基部，所述支撑基部包括岛的阵列，其中所述岛的上表面在所述支撑基部的主表面上凸出，用于与在所述晶片上的芯片的阵列对齐；将所述晶片设置在所述支撑基部上，同时将所述岛的阵列与所述芯片的阵列对齐；及当通过激光光束从所述晶片上单切(singulating)所述芯片时支撑各所述岛上的所述芯片，使得在穿过所述晶片后，所述激光束的能量散失在所述岛之间的通道中而基本不加工所述支撑基部。
有利地，提供支撑基部的步骤包括提供真空卡盘，且将所述晶片安装在所述支撑基部上的步骤包括通过局部真空将所述晶片保持在所述支撑基部上。
方便地，通过局部真空将所述单切芯片保持在所述支撑基部上，以用于单切之后的加工。
有利地，将所述单切芯片保持在所述支撑基部上，以至少用于清洗、湿法蚀刻、干法蚀刻、二氟化氙蚀刻、芯片试验、芯片拾取中的一项。
可选地，所述支撑基部是中空的；所述晶片被安装在所述支撑基部上，其中所述晶片的活性表面朝向所述支撑基部并且从与所述活性侧相反的后侧切割所述晶片。
附图说明
下面通过举例的方式、并参考附图对本发明进行详细说明，其中：
图1是用于本发明中的晶片的俯视图；
图2视根据本发明的支撑基部或卡盘的俯视图；
图3是图2中3-3线的横剖视图；和
图4是图2中支撑基部或卡盘的侧视图。
在附图中，相同的附图标记代表相同的部件。
具体实施方式
对于附图1，直径为D的晶片10在其上形成矩形芯片11的规则阵列，所述芯片具有如图1和表1第1列所示的尺寸dx乘以dy，和节距X、Y。所述芯片被Y方向的行距12以宽度sx和X方向的行距13以宽度sy间隔开。为清楚起见，所有在晶片10上的芯片11尺寸相同，但是本发明并不局限于相同尺寸的芯片、或矩形形状的芯片、或规则阵列。
  晶片标准参数   卡盘参数
  在x方向的芯片节距＝x   在x方向的岛宽＝Wx
  在y方向的芯片节距＝y   在x方向的岛宽＝Wy
  在x方向的芯片尺寸＝dx   在x方向的岛节距＝Px
  在y方向的芯片尺寸＝dy   在y方向的岛节距＝Py
  在x方向的行距宽度＝sx   在x方向的岛切口＝Px-Wx
  在y方向的行距宽度＝sy   在y方向的岛切口＝Py-Wy
  晶片直径＝D   卡盘直径＝C
  晶片厚度＝t   岛高＝h
表1：晶片和卡盘参数的定义
参照图2至图4，根据本发明，适用于支撑晶片10的卡盘20的俯视图如图2所示。图3示出了图2中在y方向沿线3-3的剖视图。所述卡盘20是具有类似于晶片10的直径D的直径C的圆盘，其中所述晶片的上主面设置有突出的矩形岛21的阵列，其与晶片10上芯片11的阵列对应且对齐地排列。这些岛21分别具有尺寸Wx乘以Wy，以及节距Px和Py，如图2和表1的第2列所示。所述岛21被y方向的通道22以宽度kx和被x方向的通道23以宽度ky间隔开。
所述岛21的目的是在切割时和切割后支撑单独的芯片11。对于图4，在激光切割时的卡盘20的使用允许激光束30通过并且在加工时在卡盘岛21之间的通道22、23中散失能量。
下列因素与卡盘20的设计相关。
1.岛的尺寸
为了支撑芯片11但允许激光束30在岛21之间通过，通常，岛的尺寸Wx、Wy必须分别地最大程度上与芯片尺寸dx、dy一致。
然而，在有些情形中激光加工设备提供了减小的切口的可能性。在这些晶片行距12、13并未减小以利用该减小的切口的示例中，所述岛的尺寸会比芯片的尺寸大，但是不大于芯片尺寸加上所述晶片行距12、13与由激光形成的切口之间的差的一半。
通常，岛的尺寸应小于芯片的尺寸。
Wx＜dx且Wy＜dy
2.岛的切口
随着对岛的尺寸Wx、Wy的要求，优选岛切口为kx、ky，比如在一特定轴线中的两个岛的最近的边之间的距离至少分别与相应的晶片行距sx，sy同样大。在任何情况下，所述岛的间隔必须至少与激光切口或锯刃宽度一样大。这用来确保，在激光切割中，在切割或切削过程中激光束通常散失进岛21之间的通道22、23的底部内，或者，在使用时，锯刃并不在岛上蚀刻。
岛的切口应当与晶片行距相同或比晶片行距更大。
Px-Wx＝kx≥sx和Py-Wy＝ky≥sy
3.岛的高度
通道22、23的深度或者岛21之间的沟槽，即岛的高度，应当比“加工深度”大，即，对于距离光束聚焦或收敛的平面一定距离d的激光束30强度的聚焦深度被减小到制成卡盘20的加工材料的强度之下。如图4所示。聚焦的深度dof，优选地比岛21的高度h小。
除上述需求之外，优选卡盘20被构造成即使是当从切割机移走时允许真空保持。此外，卡盘20优选被设计成当将一个或多个芯片11从卡盘20移走时，空气流足够用来使所有其它的仍安装在卡盘20上的芯片11保持局部真空，以保持卡盘上剩下的芯片直至被移走，例如，被芯片拾取器移走。
在一实施例中，卡盘20方便了后续的过程，例如为了移入清洗台等的后续工艺，允许在切割工序之后将已切割的晶片10抬起。在清洗之后单独的芯片11可从卡盘20上直接拾取，而不需要带。切割后的常规工序包括清洗、蚀刻(湿法蚀刻，干法蚀刻，二氟化氙蚀刻)、芯片测试和芯片拾取。
在另一个实施例中，晶片10可以面朝下地安装在卡盘上，并从晶片背部切割。例如，通过将晶片10面朝下设置在中空的卡盘上，对齐，可使用基于照相机的成像系统从晶片的面朝下、图案侧定位已知的特征。对齐之后，支撑卡盘可被设置在晶片的活性侧上，同时保持晶片与切割系统之间的配合度。因此，简而言之，如果最初使用的是中空的卡盘，那么照相机能看到图案，这时通过系统在“对齐”晶片正面设置“岛”卡盘而工作。在这一实施例中，切割可从晶片后部进行。
支撑基片20或者卡盘的基本原理是它为每一芯片11提供了支撑“岛”21，支撑“岛”21在单切工艺期间或之后保持将各芯片11定位，并且当设置了“芯片拾取”机械时，允许从卡盘20拾取各晶片11。卡盘设计包括在岛21之间的通道22、23，其允许当激光束在芯片之间加工时，用于单切芯片的激光束30的能量消散在支撑卡盘20之中。通道深度h足以允许激光束30扩大以便使激光束强度降低至不能加工卡盘材料的水平为止。
本发明的优点是从切割工艺过程中消除切割带和切割架。同时减少了费用和降低了芯片损坏的可能性，或者由于芯片拾取产生应力损坏芯片的可能性，这使得芯片内磨损降低。考虑到75微米厚的晶片，在激光单切之后，激光形成的切口在宽度上通常接近25微米。这形成了3∶1的纵横比(深度比宽度)。晶片在带上的移动可导致芯片互相接触，并潜在的导致在切割的晶片上一定程度的碎屑。这些问题均被本发明克服。

Claims (9)

1.一种用于在通过激光光束切割晶片时和切割晶片后支撑该晶片的芯片的支撑基部，其特征在于：所述支撑基部包括岛阵列，该岛的上表面在所述支撑基部的主表面上凸出，用于与在所述晶片上的、或者从所述晶片上被单切的芯片的阵列对齐，其中所述岛之间的间隔不小于用于切割所述晶片的激光的切口，并且其中所述岛的上表面在所述主表面之上有足够的高度，使得用于切割所述晶片的激光束的能量在所述岛之间的通道里消散而不会加工所述支撑基部，所述支撑基部是中空的以支撑半导体晶片，其中将该半导体晶片的活性表面朝向所述支撑基部。
2.如权利要求1所述的支撑基部，其特征在于：在所述主表面以上的所述岛的所述上表面的高度比所述激光束的聚焦深度更大。
3.如权利要求1所述的支撑基部，其特征在于：所述支撑基部是真空卡盘，使得可通过局部真空将所述芯片保持在所述支撑基部上。
4.如权利要求3所述的支撑基部，其特征在于：在切割后所述芯片可通过所述局部真空被保持在所述支撑基部上，用于随后的加工。
5.一种切割晶片的方法，其特征在于包括以下步骤：
a.提供激光束；
b.提供支撑基部，所述支撑基部包括岛的阵列，其中所述岛的上表面在所述支撑基部的主表面上凸出，用于与在所述晶片上的芯片的阵列对齐；
c.将所述晶片设置在所述支撑基部上，同时将所述岛的阵列与所述芯片的阵列对齐；及
d.当通过激光光束从所述晶片上单切所述芯片时支撑各所述岛上的所述芯片，使得在穿过所述晶片后，所述激光束的能量散失在所述岛之间的通道中而不加工所述支撑基部，
其中，所述支撑基部是中空的，所述晶片被安装在所述支撑基部上，其中所述晶片的活性表面朝向所述支撑基部并且从与所述活性侧相反的后侧切割所述晶片。
6.如权利要求5所述的方法，其特征在于：提供支撑基部的步骤包括提供真空卡盘，且将所述晶片安装在所述支撑基部上的步骤包括通过局部真空将所述晶片保持在所述支撑基部上。
7.如权利要求6所述的方法，其特征在于：通过局部真空将所述单切芯片保持在所述支撑基部上，以用于单切之后的加工。
8.如权利要求7所述的方法，其特征在于：将所述单切芯片保持在所述支撑基部上，以至少用于清洗、湿法蚀刻、干法蚀刻、芯片试验、芯片拾取中的一项。
9.如权利要求8所述的方法，其特征在于：所述干法蚀刻为二氟化氙蚀刻。
CN200780004238XA 2006-02-02 2007-02-01 用于单切晶片的支撑装置 Expired - Fee Related CN101379590B (zh)

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