CN101379590A - 用于单切晶片的支撑装置 - Google Patents
用于单切晶片的支撑装置 Download PDFInfo
- Publication number
- CN101379590A CN101379590A CNA200780004238XA CN200780004238A CN101379590A CN 101379590 A CN101379590 A CN 101379590A CN A200780004238X A CNA200780004238X A CN A200780004238XA CN 200780004238 A CN200780004238 A CN 200780004238A CN 101379590 A CN101379590 A CN 101379590A
- Authority
- CN
- China
- Prior art keywords
- support base
- wafer
- chip
- island
- described support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 claims description 77
- 238000005520 cutting process Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000003754 machining Methods 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- XBWAZCLHZCFCGK-UHFFFAOYSA-N 7-chloro-1-methyl-5-phenyl-3,4-dihydro-2h-1,4-benzodiazepin-1-ium;chloride Chemical compound [Cl-].C12=CC(Cl)=CC=C2[NH+](C)CCN=C1C1=CC=CC=C1 XBWAZCLHZCFCGK-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/11—Vacuum
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
晶片标准参数 | 卡盘参数 |
在x方向的芯片节距=x | 在x方向的岛宽=Wx |
在y方向的芯片节距=y | 在x方向的岛宽=Wy |
在x方向的芯片尺寸=dx | 在x方向的岛节距=Px |
在y方向的芯片尺寸=dy | 在y方向的岛节距=Py |
在x方向的行距宽度=sx | 在x方向的岛切口=Px—Wx |
在y方向的行距宽度=sy | 在y方向的岛切口=Py—Wy |
晶片直径=D | 卡盘直径=C |
晶片厚度=t | 岛高=h |
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0602114.1 | 2006-02-02 | ||
GB0602114A GB2434913A (en) | 2006-02-02 | 2006-02-02 | Support for wafer singulation |
PCT/EP2007/000873 WO2007088058A2 (en) | 2006-02-02 | 2007-02-01 | Support for wafer singulation |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101379590A true CN101379590A (zh) | 2009-03-04 |
CN101379590B CN101379590B (zh) | 2011-10-26 |
Family
ID=36100922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200780004238XA Expired - Fee Related CN101379590B (zh) | 2006-02-02 | 2007-02-01 | 用于单切晶片的支撑装置 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20120208349A1 (zh) |
EP (1) | EP1979931A2 (zh) |
JP (1) | JP2009525601A (zh) |
KR (1) | KR20080098018A (zh) |
CN (1) | CN101379590B (zh) |
GB (1) | GB2434913A (zh) |
SG (1) | SG171639A1 (zh) |
TW (1) | TWI376010B (zh) |
WO (1) | WO2007088058A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104838483A (zh) * | 2012-12-17 | 2015-08-12 | 新加坡科技研究局 | 晶片划切装置和晶片划切方法 |
US11551970B2 (en) | 2020-10-22 | 2023-01-10 | Innolux Corporation | Method for manufacturing an electronic device |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2458475B (en) * | 2008-03-18 | 2011-10-26 | Xsil Technology Ltd | Processing of multilayer semiconductor wafers |
TW201243930A (en) * | 2011-04-21 | 2012-11-01 | Lingsen Precision Ind Ltd | Wafer dicing method |
EP3920200A1 (en) | 2014-05-05 | 2021-12-08 | 3D Glass Solutions, Inc. | 2d and 3d inductors antenna and transformers fabricating photoactive substrates |
USD754516S1 (en) * | 2014-12-19 | 2016-04-26 | Leatherman Tool Group, Inc. | Multipurpose tool |
WO2017147511A1 (en) | 2016-02-25 | 2017-08-31 | 3D Glass Solutions, Inc. | 3d capacitor and capacitor array fabricating photoactive substrates |
WO2017177171A1 (en) | 2016-04-08 | 2017-10-12 | 3D Glass Solutions, Inc. | Methods of fabricating photosensitive substrates suitable for optical coupler |
JP7150342B2 (ja) | 2017-04-28 | 2022-10-11 | スリーディー グラス ソリューションズ,インク | Rfサーキュレータ |
EP3649733A1 (en) | 2017-07-07 | 2020-05-13 | 3D Glass Solutions, Inc. | 2d and 3d rf lumped element devices for rf system in a package photoactive glass substrates |
WO2019118761A1 (en) | 2017-12-15 | 2019-06-20 | 3D Glass Solutions, Inc. | Coupled transmission line resonate rf filter |
WO2019136024A1 (en) | 2018-01-04 | 2019-07-11 | 3D Glass Solutions, Inc. | Impedance matching conductive structure for high efficiency rf circuits |
US11076489B2 (en) | 2018-04-10 | 2021-07-27 | 3D Glass Solutions, Inc. | RF integrated power condition capacitor |
KR102475010B1 (ko) | 2018-05-29 | 2022-12-07 | 3디 글래스 솔루션즈 인코포레이티드 | 저 삽입 손실 rf 전송 라인 |
AU2019344542B2 (en) | 2018-09-17 | 2022-02-24 | 3D Glass Solutions, Inc. | High efficiency compact slotted antenna with a ground plane |
WO2020139951A1 (en) | 2018-12-28 | 2020-07-02 | 3D Glass Solutions, Inc. | Heterogenous integration for rf, microwave and mm wave systems in photoactive glass substrates |
WO2020139955A1 (en) | 2018-12-28 | 2020-07-02 | 3D Glass Solutions, Inc. | Annular capacitor rf, microwave and mm wave systems |
AU2020253553A1 (en) | 2019-04-05 | 2021-10-28 | 3D Glass Solutions, Inc. | Glass based empty substrate integrated waveguide devices |
EP3948954B1 (en) | 2019-04-18 | 2023-06-14 | 3D Glass Solutions, Inc. | High efficiency die dicing and release |
EP4121988A4 (en) | 2020-04-17 | 2023-08-30 | 3D Glass Solutions, Inc. | BROADBAND INDUCTOR |
Family Cites Families (19)
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US3809050A (en) * | 1971-01-13 | 1974-05-07 | Cogar Corp | Mounting block for semiconductor wafers |
US3976288A (en) * | 1975-11-24 | 1976-08-24 | Ibm Corporation | Semiconductor wafer dicing fixture |
JPS63301543A (ja) * | 1987-06-01 | 1988-12-08 | Nec Corp | 半導体素子の製造方法 |
JPH01238907A (ja) * | 1988-03-18 | 1989-09-25 | Nec Corp | 半導体組立治具 |
JPH06269968A (ja) | 1993-03-23 | 1994-09-27 | Hitachi Cable Ltd | ガラスの切断方法及びその装置 |
US5445559A (en) * | 1993-06-24 | 1995-08-29 | Texas Instruments Incorporated | Wafer-like processing after sawing DMDs |
US5609148A (en) * | 1995-03-31 | 1997-03-11 | Siemens Aktiengesellschaft | Method and apparatus for dicing semiconductor wafers |
US5618759A (en) * | 1995-05-31 | 1997-04-08 | Texas Instruments Incorporated | Methods of and apparatus for immobilizing semiconductor wafers during sawing thereof |
US5803797A (en) * | 1996-11-26 | 1998-09-08 | Micron Technology, Inc. | Method and apparatus to hold intergrated circuit chips onto a chuck and to simultaneously remove multiple intergrated circuit chips from a cutting chuck |
US5809987A (en) * | 1996-11-26 | 1998-09-22 | Micron Technology,Inc. | Apparatus for reducing damage to wafer cutting blades during wafer dicing |
SG132495A1 (en) * | 1998-03-13 | 2007-06-28 | Towa Corp | Nest for dicing, and method and apparatus for cutting tapeless substrate using the same |
US6136137A (en) * | 1998-07-06 | 2000-10-24 | Micron Technology, Inc. | System and method for dicing semiconductor components |
US6572944B1 (en) * | 2001-01-16 | 2003-06-03 | Amkor Technology, Inc. | Structure for fabricating a special-purpose die using a polymerizable tape |
JP4886937B2 (ja) | 2001-05-17 | 2012-02-29 | リンテック株式会社 | ダイシングシート及びダイシング方法 |
KR100476591B1 (ko) * | 2002-08-26 | 2005-03-18 | 삼성전자주식회사 | 웨이퍼 테이블과, 이를 이용한 웨이퍼 쏘잉/소자 접착장치와, 웨이퍼 쏘잉/소자 분류 장치 |
JP2004322157A (ja) | 2003-04-25 | 2004-11-18 | Nitto Denko Corp | 被加工物の加工方法、及びこれに用いる粘着シート |
US20050064683A1 (en) * | 2003-09-19 | 2005-03-24 | Farnworth Warren M. | Method and apparatus for supporting wafers for die singulation and subsequent handling |
JP4342992B2 (ja) * | 2004-03-17 | 2009-10-14 | 株式会社ディスコ | レーザー加工装置のチャックテーブル |
JP4571850B2 (ja) * | 2004-11-12 | 2010-10-27 | 東京応化工業株式会社 | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
-
2006
- 2006-02-02 GB GB0602114A patent/GB2434913A/en not_active Withdrawn
-
2007
- 2007-02-01 SG SG201103079-8A patent/SG171639A1/en unknown
- 2007-02-01 WO PCT/EP2007/000873 patent/WO2007088058A2/en active Application Filing
- 2007-02-01 CN CN200780004238XA patent/CN101379590B/zh not_active Expired - Fee Related
- 2007-02-01 EP EP07703202A patent/EP1979931A2/en not_active Withdrawn
- 2007-02-01 US US12/223,046 patent/US20120208349A1/en not_active Abandoned
- 2007-02-01 KR KR1020087018922A patent/KR20080098018A/ko active Search and Examination
- 2007-02-01 JP JP2008552748A patent/JP2009525601A/ja active Pending
- 2007-02-01 TW TW096103684A patent/TWI376010B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104838483A (zh) * | 2012-12-17 | 2015-08-12 | 新加坡科技研究局 | 晶片划切装置和晶片划切方法 |
CN104838483B (zh) * | 2012-12-17 | 2019-05-21 | 新加坡科技研究局 | 晶片划切装置和晶片划切方法 |
US11551970B2 (en) | 2020-10-22 | 2023-01-10 | Innolux Corporation | Method for manufacturing an electronic device |
Also Published As
Publication number | Publication date |
---|---|
TWI376010B (en) | 2012-11-01 |
JP2009525601A (ja) | 2009-07-09 |
GB2434913A (en) | 2007-08-08 |
TW200746348A (en) | 2007-12-16 |
CN101379590B (zh) | 2011-10-26 |
EP1979931A2 (en) | 2008-10-15 |
WO2007088058A2 (en) | 2007-08-09 |
SG171639A1 (en) | 2011-06-29 |
US20120208349A1 (en) | 2012-08-16 |
WO2007088058A3 (en) | 2007-09-20 |
KR20080098018A (ko) | 2008-11-06 |
GB0602114D0 (en) | 2006-03-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: IRITALK SCIENCE AND TECHNOLOGY INDUSTRIAL STOCK CO Free format text: FORMER OWNER: XSIL TECHNOLOGY CO., LTD. Effective date: 20091120 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20091120 Address after: oregon Applicant after: Electro Scient Ind Inc. Address before: Dublin, Ireland Applicant before: XSIL Technology Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111026 Termination date: 20150201 |
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EXPY | Termination of patent right or utility model |