SG171639A1 - Support for wafer singulation - Google Patents
Support for wafer singulationInfo
- Publication number
- SG171639A1 SG171639A1 SG201103079-8A SG2011030798A SG171639A1 SG 171639 A1 SG171639 A1 SG 171639A1 SG 2011030798 A SG2011030798 A SG 2011030798A SG 171639 A1 SG171639 A1 SG 171639A1
- Authority
- SG
- Singapore
- Prior art keywords
- wafer
- islands
- support substrate
- support
- laser
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 238000003754 machining Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/11—Vacuum
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0602114A GB2434913A (en) | 2006-02-02 | 2006-02-02 | Support for wafer singulation |
Publications (1)
Publication Number | Publication Date |
---|---|
SG171639A1 true SG171639A1 (en) | 2011-06-29 |
Family
ID=36100922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG201103079-8A SG171639A1 (en) | 2006-02-02 | 2007-02-01 | Support for wafer singulation |
Country Status (9)
Country | Link |
---|---|
US (1) | US20120208349A1 (zh) |
EP (1) | EP1979931A2 (zh) |
JP (1) | JP2009525601A (zh) |
KR (1) | KR20080098018A (zh) |
CN (1) | CN101379590B (zh) |
GB (1) | GB2434913A (zh) |
SG (1) | SG171639A1 (zh) |
TW (1) | TWI376010B (zh) |
WO (1) | WO2007088058A2 (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2458475B (en) * | 2008-03-18 | 2011-10-26 | Xsil Technology Ltd | Processing of multilayer semiconductor wafers |
TW201243930A (en) * | 2011-04-21 | 2012-11-01 | Lingsen Precision Ind Ltd | Wafer dicing method |
WO2014098771A1 (en) * | 2012-12-17 | 2014-06-26 | Agency For Science, Technology And Research | Wafer dicing apparatus and wafer dicing method |
EP3140838B1 (en) | 2014-05-05 | 2021-08-25 | 3D Glass Solutions, Inc. | Inductive device in a photo-definable glass structure |
USD754516S1 (en) * | 2014-12-19 | 2016-04-26 | Leatherman Tool Group, Inc. | Multipurpose tool |
AU2017223993B2 (en) | 2016-02-25 | 2019-07-04 | 3D Glass Solutions, Inc. | 3D capacitor and capacitor array fabricating photoactive substrates |
US11161773B2 (en) | 2016-04-08 | 2021-11-02 | 3D Glass Solutions, Inc. | Methods of fabricating photosensitive substrates suitable for optical coupler |
KR102420212B1 (ko) | 2017-04-28 | 2022-07-13 | 3디 글래스 솔루션즈 인코포레이티드 | Rf 서큘레이터 |
AU2018297035B2 (en) | 2017-07-07 | 2021-02-25 | 3D Glass Solutions, Inc. | 2D and 3D RF lumped element devices for RF system in a package photoactive glass substrates |
KR102614826B1 (ko) | 2017-12-15 | 2023-12-19 | 3디 글래스 솔루션즈 인코포레이티드 | 결합 전송 라인 공진 rf 필터 |
JP7226832B2 (ja) | 2018-01-04 | 2023-02-21 | スリーディー グラス ソリューションズ,インク | 高効率rf回路のためのインピーダンス整合伝導構造 |
WO2019199470A1 (en) | 2018-04-10 | 2019-10-17 | 3D Glass Solutions, Inc. | Rf integrated power condition capacitor |
KR102475010B1 (ko) | 2018-05-29 | 2022-12-07 | 3디 글래스 솔루션즈 인코포레이티드 | 저 삽입 손실 rf 전송 라인 |
US11139582B2 (en) | 2018-09-17 | 2021-10-05 | 3D Glass Solutions, Inc. | High efficiency compact slotted antenna with a ground plane |
WO2020139951A1 (en) | 2018-12-28 | 2020-07-02 | 3D Glass Solutions, Inc. | Heterogenous integration for rf, microwave and mm wave systems in photoactive glass substrates |
US11270843B2 (en) | 2018-12-28 | 2022-03-08 | 3D Glass Solutions, Inc. | Annular capacitor RF, microwave and MM wave systems |
KR20210147040A (ko) | 2019-04-05 | 2021-12-06 | 3디 글래스 솔루션즈 인코포레이티드 | 유리 기반의 빈 기판 집적 도파관 디바이스 |
WO2020214788A1 (en) * | 2019-04-18 | 2020-10-22 | 3D Glass Solutions, Inc. | High efficiency die dicing and release |
KR20220164800A (ko) | 2020-04-17 | 2022-12-13 | 3디 글래스 솔루션즈 인코포레이티드 | 광대역 인덕터 |
US11551970B2 (en) | 2020-10-22 | 2023-01-10 | Innolux Corporation | Method for manufacturing an electronic device |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3809050A (en) * | 1971-01-13 | 1974-05-07 | Cogar Corp | Mounting block for semiconductor wafers |
US3976288A (en) * | 1975-11-24 | 1976-08-24 | Ibm Corporation | Semiconductor wafer dicing fixture |
JPS63301543A (ja) * | 1987-06-01 | 1988-12-08 | Nec Corp | 半導体素子の製造方法 |
JPH01238907A (ja) * | 1988-03-18 | 1989-09-25 | Nec Corp | 半導体組立治具 |
JPH06269968A (ja) | 1993-03-23 | 1994-09-27 | Hitachi Cable Ltd | ガラスの切断方法及びその装置 |
US5445559A (en) * | 1993-06-24 | 1995-08-29 | Texas Instruments Incorporated | Wafer-like processing after sawing DMDs |
US5609148A (en) * | 1995-03-31 | 1997-03-11 | Siemens Aktiengesellschaft | Method and apparatus for dicing semiconductor wafers |
US5618759A (en) * | 1995-05-31 | 1997-04-08 | Texas Instruments Incorporated | Methods of and apparatus for immobilizing semiconductor wafers during sawing thereof |
US5809987A (en) * | 1996-11-26 | 1998-09-22 | Micron Technology,Inc. | Apparatus for reducing damage to wafer cutting blades during wafer dicing |
US5803797A (en) * | 1996-11-26 | 1998-09-08 | Micron Technology, Inc. | Method and apparatus to hold intergrated circuit chips onto a chuck and to simultaneously remove multiple intergrated circuit chips from a cutting chuck |
SG102690A1 (en) * | 1998-03-13 | 2004-03-26 | Towa Corp | Nest for dicing, and method and apparatus for cutting tapeless substrate using the same |
US6136137A (en) * | 1998-07-06 | 2000-10-24 | Micron Technology, Inc. | System and method for dicing semiconductor components |
US6572944B1 (en) * | 2001-01-16 | 2003-06-03 | Amkor Technology, Inc. | Structure for fabricating a special-purpose die using a polymerizable tape |
JP4886937B2 (ja) | 2001-05-17 | 2012-02-29 | リンテック株式会社 | ダイシングシート及びダイシング方法 |
KR100476591B1 (ko) * | 2002-08-26 | 2005-03-18 | 삼성전자주식회사 | 웨이퍼 테이블과, 이를 이용한 웨이퍼 쏘잉/소자 접착장치와, 웨이퍼 쏘잉/소자 분류 장치 |
JP2004322157A (ja) | 2003-04-25 | 2004-11-18 | Nitto Denko Corp | 被加工物の加工方法、及びこれに用いる粘着シート |
US20050064683A1 (en) * | 2003-09-19 | 2005-03-24 | Farnworth Warren M. | Method and apparatus for supporting wafers for die singulation and subsequent handling |
JP4342992B2 (ja) * | 2004-03-17 | 2009-10-14 | 株式会社ディスコ | レーザー加工装置のチャックテーブル |
JP4571850B2 (ja) * | 2004-11-12 | 2010-10-27 | 東京応化工業株式会社 | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
-
2006
- 2006-02-02 GB GB0602114A patent/GB2434913A/en not_active Withdrawn
-
2007
- 2007-02-01 KR KR1020087018922A patent/KR20080098018A/ko active Search and Examination
- 2007-02-01 WO PCT/EP2007/000873 patent/WO2007088058A2/en active Application Filing
- 2007-02-01 SG SG201103079-8A patent/SG171639A1/en unknown
- 2007-02-01 TW TW096103684A patent/TWI376010B/zh not_active IP Right Cessation
- 2007-02-01 EP EP07703202A patent/EP1979931A2/en not_active Withdrawn
- 2007-02-01 CN CN200780004238XA patent/CN101379590B/zh not_active Expired - Fee Related
- 2007-02-01 JP JP2008552748A patent/JP2009525601A/ja active Pending
- 2007-02-01 US US12/223,046 patent/US20120208349A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2007088058A2 (en) | 2007-08-09 |
TW200746348A (en) | 2007-12-16 |
KR20080098018A (ko) | 2008-11-06 |
WO2007088058A3 (en) | 2007-09-20 |
JP2009525601A (ja) | 2009-07-09 |
CN101379590B (zh) | 2011-10-26 |
EP1979931A2 (en) | 2008-10-15 |
GB2434913A (en) | 2007-08-08 |
US20120208349A1 (en) | 2012-08-16 |
GB0602114D0 (en) | 2006-03-15 |
TWI376010B (en) | 2012-11-01 |
CN101379590A (zh) | 2009-03-04 |
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