CN101378035A - 半导体装置的制造方法 - Google Patents
半导体装置的制造方法 Download PDFInfo
- Publication number
- CN101378035A CN101378035A CNA200810213401XA CN200810213401A CN101378035A CN 101378035 A CN101378035 A CN 101378035A CN A200810213401X A CNA200810213401X A CN A200810213401XA CN 200810213401 A CN200810213401 A CN 200810213401A CN 101378035 A CN101378035 A CN 101378035A
- Authority
- CN
- China
- Prior art keywords
- barrier metal
- interlayer dielectric
- film
- metal layer
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000002184 metal Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 230000004888 barrier function Effects 0.000 claims abstract description 43
- 239000010410 layer Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 31
- 239000011229 interlayer Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims 2
- 239000011241 protective layer Substances 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 2
- 238000005275 alloying Methods 0.000 abstract 1
- 210000003323 beak Anatomy 0.000 abstract 1
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 229910018125 Al-Si Inorganic materials 0.000 description 3
- 229910018520 Al—Si Inorganic materials 0.000 description 3
- 229910018594 Si-Cu Inorganic materials 0.000 description 3
- 229910008465 Si—Cu Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76868—Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-222660 | 2007-08-29 | ||
JP2007222660 | 2007-08-29 | ||
JP2007222660A JP5291310B2 (ja) | 2007-08-29 | 2007-08-29 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101378035A true CN101378035A (zh) | 2009-03-04 |
CN101378035B CN101378035B (zh) | 2014-06-25 |
Family
ID=40408147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810213401.XA Expired - Fee Related CN101378035B (zh) | 2007-08-29 | 2008-08-29 | 半导体装置的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7737027B2 (zh) |
JP (1) | JP5291310B2 (zh) |
KR (1) | KR101491150B1 (zh) |
CN (1) | CN101378035B (zh) |
TW (1) | TWI495039B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103038156A (zh) * | 2010-05-31 | 2013-04-10 | 罗伯特·博世有限公司 | 具有敷镀通孔的器件及其制造方法 |
CN107799400A (zh) * | 2016-08-29 | 2018-03-13 | 东京毅力科创株式会社 | 处理被处理体的方法 |
CN108364937A (zh) * | 2017-01-26 | 2018-08-03 | 三星电子株式会社 | 包括电阻结构的半导体器件 |
CN108511415A (zh) * | 2017-02-28 | 2018-09-07 | 佳能株式会社 | 电子组件制造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010063294B4 (de) * | 2010-12-16 | 2019-07-11 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zur Herstellung von Metallisierungssystemen von Halbleiterbauelementen, die eine Kupfer/Silizium-Verbindung als ein Barrierenmaterial aufweisen |
US20210020455A1 (en) * | 2019-07-17 | 2021-01-21 | Nanya Technology Corporation | Conductive via structure |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1032247A (ja) * | 1996-07-17 | 1998-02-03 | Sony Corp | 半導体装置及びその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005033173A (ja) * | 2003-06-16 | 2005-02-03 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
KR100641362B1 (ko) * | 2005-01-13 | 2006-10-31 | 삼성전자주식회사 | 이중 확산방지막을 갖는 배선구조 및 그 제조방법 |
-
2007
- 2007-08-29 JP JP2007222660A patent/JP5291310B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-27 US US12/229,808 patent/US7737027B2/en not_active Expired - Fee Related
- 2008-08-28 TW TW097132911A patent/TWI495039B/zh not_active IP Right Cessation
- 2008-08-28 KR KR20080084577A patent/KR101491150B1/ko active IP Right Grant
- 2008-08-29 CN CN200810213401.XA patent/CN101378035B/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1032247A (ja) * | 1996-07-17 | 1998-02-03 | Sony Corp | 半導体装置及びその製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103038156A (zh) * | 2010-05-31 | 2013-04-10 | 罗伯特·博世有限公司 | 具有敷镀通孔的器件及其制造方法 |
CN107799400A (zh) * | 2016-08-29 | 2018-03-13 | 东京毅力科创株式会社 | 处理被处理体的方法 |
CN108364937A (zh) * | 2017-01-26 | 2018-08-03 | 三星电子株式会社 | 包括电阻结构的半导体器件 |
CN108364937B (zh) * | 2017-01-26 | 2022-12-27 | 三星电子株式会社 | 包括电阻结构的半导体器件 |
CN108511415A (zh) * | 2017-02-28 | 2018-09-07 | 佳能株式会社 | 电子组件制造方法 |
CN108511415B (zh) * | 2017-02-28 | 2022-06-14 | 佳能株式会社 | 电子组件制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200929440A (en) | 2009-07-01 |
US7737027B2 (en) | 2010-06-15 |
JP2009054947A (ja) | 2009-03-12 |
TWI495039B (zh) | 2015-08-01 |
US20090061620A1 (en) | 2009-03-05 |
KR20090023231A (ko) | 2009-03-04 |
CN101378035B (zh) | 2014-06-25 |
KR101491150B1 (ko) | 2015-02-06 |
JP5291310B2 (ja) | 2013-09-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160321 Address after: Chiba County, Japan Patentee after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140625 Termination date: 20210829 |