CN101323769A - 晶片接合用树脂胶 - Google Patents
晶片接合用树脂胶 Download PDFInfo
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- CN101323769A CN101323769A CNA2008101447159A CN200810144715A CN101323769A CN 101323769 A CN101323769 A CN 101323769A CN A2008101447159 A CNA2008101447159 A CN A2008101447159A CN 200810144715 A CN200810144715 A CN 200810144715A CN 101323769 A CN101323769 A CN 101323769A
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Abstract
公开了一种晶片接合用树脂胶,该树脂胶含有:具有羧酸端基的丁二烯的均聚物或共聚物(A)、热固性树脂(B)、填料(C)以及印刷用溶剂(D),其干燥固化后的弹性模数为1-100MPa(25℃)。优选的是,其固体成分为40-90重量%,触变指数为1.5-8.0,粘度(25℃)为5-1000Pa·s。该半导体器件的制造方法是,使用上述树脂胶,按下列步骤制造半导体器件:(1)在衬底上涂布规定量的树脂胶,(2)将上述树脂胶干燥并使树脂B阶化,(3)在B阶化后的树脂胶上搭载半导体晶片,(4)将树脂进行后固化。
Description
本发明申请是以下发明申请的分案申请:国际申请号为PCT/JP2005/011140,申请号为200580014047.2,申请日为2005年6月17日,发明创造名称为晶片接合用树脂胶。
技术领域
本发明是关于用来作为IC(集成电路)、LSI(大规模集成电路)等半导体元件与引线框或绝缘性支撑衬底等支撑部件之间的接合材料(die bondingmaterial)的晶片接合用树脂胶(resin paste),以及使用其的半导体器件的制造方法、半导体器件等的用途。
背景技术
作为IC或LSI与引线框之间的接合材料,以往已知有金-硅共晶合金、焊料或银膏等。
本申请人此前曾提出过采用特定聚酰亚胺树脂的接合薄膜以及在特定的聚酰亚胺树脂中添加导电性填料或无机填料的晶片接合用接合薄膜(参见日本专利特开平07-228697号公报、特开平06-145639号公报、特开平06-264035号公报)。
上述金-硅共晶合金虽然耐热性和耐湿性高,但由于弹性模数大,用于大型芯片时容易破裂,而且价格昂贵。
焊料虽然价格较低,但耐热性差,其弹性模数与金-硅共晶合金一样高,难以应用于大型芯片。
银膏价格便宜,耐湿性高,其弹性模数在这些材料中是最低的,而且具有可适用于350℃热压合型引线接合的耐热性,因而目前是晶片接合材料的主流产品。然而,伴随IC和LSI的高度集成化,芯片逐渐大型化,如果用银膏将IC或LSI与引线框接合,就必须在芯片上全面地广涂银糊,这样会有困难。
本申请人先前提出的晶片接合用接合薄膜,可在较低的温度接合,且具有良好的热态时接合力,作为芯片接合用途,可以适用42合金引线框。
然而,近年来伴随着封装的小型化、轻量化,绝缘性支持衬底的使用渐趋广泛,另外,为了降低制造成本,采用大批量生产性高的印刷法供给晶片接合材料的方法受到人们的关注。在这样的情况下,要想高效率地将此接合薄膜供给、贴合到绝缘性支撑衬底上,就必须预先切出(或冲裁)成芯片尺寸,然后贴合薄膜。
切出接合薄膜并贴合到衬底上的方法中,需要使用能提高生产率的贴合装置。另外,冲裁接合薄膜后,将多个芯片一并贴合的方法,容易产生接合薄膜的浪费。而且,大部分的绝缘性支撑衬底,为了在其内部形成内层配线,贴合接合薄膜的表面有很多凹凸,贴合接合薄膜时产生空隙,容易使可靠性下降。
发明内容
本发明的任务是,对于必须在较低温度下贴合半导体晶片的衬底,提供可以采用印刷法容易地供给、涂布的晶片接合用树脂胶。另外,本发明的任务还在于,提供使用该晶片接合用树脂胶的半导体器件的制造方法以及半导体器件的用途等。
为实现上述任务,本发明采用下述构成。即,本发明是关于一种晶片接合用树脂胶,该树脂胶含有:具有羧酸端基的丁二烯的均聚物或共聚物(A)、热固性树脂(B)、填料(C)以及印刷用溶剂(D),干燥固化后的树脂胶的弹性模数是1-300MPa(25℃)。
另外,本发明是关于使用上述晶片接合用树脂胶的半导体器件的制造方法,该方法包括:(1)在衬底上涂布规定量的上述晶片接合用树脂胶,(2)将上述树脂胶干燥,使树脂B阶化,(3)在B阶化的上述树脂上搭载半导体晶片,以及,(4)将上述树脂进行后固化。
此外,本发明还涉及采用下述制造方法制得的半导体器件,所述的方法包括:(1)在衬底上涂布规定量的上述晶片接合用树脂胶,(2)将上述树脂胶干燥,使树脂B阶化,(3)在B阶化的上述树脂上搭载半导体晶片,以及,(4)将上述树脂进行后固化。
再有,本发明还涉及半导体器件的制造方法,该方法包括:(1)在衬底上涂布规定量的上述晶片接合用树脂胶,(2)在上述树脂胶上搭载半导体晶片,以及,(3)将上述树脂胶中的树脂固化。
进而,本发明还涉及采用下述半导体器件的制造方法制得的半导体器件,所述的方法包括:(1)在衬底上涂布规定量的上述晶片接合用树脂胶,(2)在上述树脂胶上搭载半导体晶片,以及,(3)将上述树脂胶中的树脂固化。
附图说明
图1是测定剥离粘结力的装置的断面示意图。
具体实施方式
以下,进一步详细地说明本发明。
本发明的晶片接合用树脂胶(以下有时简称“树脂胶”)含有:具有羧酸端基的丁二烯聚合物(A)(均聚物或共聚物)、热固性树脂(B)、填料(C)以及印刷用溶剂(D)。
作为成分(A),即具有羧酸端基的丁二烯均聚物或共聚物,适合使用的化合物例子可以举出,在主链上导入丙烯腈的低分子量液状聚丁二烯且末端具有羧酸的Hycer CTB-2009×162、CTBN-1300×31、CTBN-1300×8、CTBN-1300×13、CTBNX-1300×9(以上皆为宇部兴产株式会社制造),或者具有羧酸基的低分子量液状聚丁二烯的NISSO-PB-C-2000(日本曹达株式会社制造)等。这些化合物可单独使用,或者2种以上组合使用。
作为成分(B)的热固性树脂,优选的化合物例如是环氧树脂,也可以使用含有环氧树脂、酚醛树脂或分子中具有酚式羟基的化合物、以及固化促进剂的树脂混合物。
环氧树脂是分子内至少含有2个环氧基的化合物,从固化性或固化物特性的角度考虑,优先选用苯酚的缩水甘油醚型环氧树脂。这类树脂可以举出:双酚A、双酚AD、双酚S、双酚F,或者卤化双酚A与环氧氯丙烷的缩合物、线型酚醛树脂的缩水甘油醚、甲酚-线型酚醛树脂的缩水甘油醚、双酚A酚醛树脂的缩水甘油醚等。这些化合物可单独使用,或者2种以上组合使用。
使用环氧树脂的场合,相对于100重量份的上述成分(A),其配合量不超过300重量份,优选的是不超过200重量份。若其配合量超过300重量份,容易使胶的保存稳定性下降。
酚醛树脂为分子中至少具有2个酚式羟基的化合物,例如,线型酚醛树脂、甲酚-线型酚醛树脂、双酚A酚醛树脂、聚-p-乙烯基苯酚、苯酚芳烷基树脂等等。这些化合物可单独使用,或者2种以上组合使用。
相对于100重量份的环氧树脂,酚醛树脂或分子中具有酚式羟基的化合物的配合量为0-150重量份为佳,0-120重量份更佳。其配合量若超过150重量份,有可能发生固化性不充分的情形。
固化剂,只要使用能使环氧树脂固化的化合物即可。这类的化合物例如可以举出:咪唑类、双氰胺衍生物、二羧酸酰肼、三苯膦、四苯基磷四苯基硼酸盐(tetraphenylphosphonium tetraphenyl borate)、2-乙基-4-甲基咪唑-四苯基硼酸酯、1,8-,二氮杂双环(5,4,0)十一烯-7-四苯基硼酸酯等等。这些化合物亦可2种以上并用。
相对于100重量份的环氧树脂,固化促进剂的量在0-50重量份为佳,0-20重量份更好。其配合量若超过50重量份,有可能发生胶的保存安定性下降。
作为热固性树脂(B),也可使用1个分子中至少含有2个热固性亚氨基的酰亚胺化合物。这样的化合物例如可以举出:邻双马来酰亚胺苯、间双马来酰亚胺苯、对双马来酰亚胺苯、1,4-双(对马来酰亚胺异苯丙基)苯、1,4-双(间马来酰亚胺异苯丙基)苯等等。这些化合物可单独使用或者2种以上组合使用。此外,也可以使用下述式(I)-(III)所示的酰亚胺化合物。
化1
式中,X或Y表示O、CH2、CF2、SO2、S、CO、C(CH3)2或C(CF3)2;R1、R2、R3、R4、R5、R6、R7和R8分别独立地表示氢原子、低级烷基、低级烷氧基、氟原子、氯原子或溴原子;D表示具有乙烯性不饱和双键的二羧酸残基;m表示0-4的整数。
在使用酰亚胺化合物的场合,相对于100重量份的成分(A),其配合量不超过200重量份,优选的是不超过100重量份。其配合量若超过200重量份,则胶的保存安定性容易下降。
作为式(I)的酰亚胺化合物,例如可以举出:4,4-双马来酰亚胺二苯醚、4,4-双马来酰亚胺二苯甲烷、4,4-双马来酰亚胺-3,3’-二甲基-二苯甲烷、4,4-双马来酰亚胺二苯砜、4,4-双马来酰亚胺二苯硫、4,4-双马来酰亚胺二苯基酮、2,2’-双(4-马来酰亚胺苯基)丙烷、4,4-双马来酰亚胺二苯基氯甲烷、1,1,1,3,3,3-六氟-2,2-双(4-马来酰亚胺苯基)丙烷等。
作为式(II)的酰亚胺化合物,例如可以举出:双[4-(4-马来酰亚胺苯氧基)苯基]醚、双[4-(4-马来酰亚胺苯氧基)苯基]甲烷、双[4-(4-马来酰亚胺苯氧基)苯基]氟甲烷、双[4-(4-马来酰亚胺苯氧基)苯基]砜、双[4-(3-马来酰亚胺苯氧基)苯基]砜、双[4-(4-马来酰亚胺苯氧基)苯基]硫醚、双[4-(4-马来酰亚胺苯氧基)苯基]酮、2,2-双[4-(4-马来酰亚胺苯氧基)苯基]丙烷、1,1,1,3,3,3-六氟-2,2-双[4-(4-马来酰亚胺苯氧基)苯基]丙烷等。
为了促进这些酰亚胺化合物的固化,也可以使用自由基聚合剂。所述的自由基聚合剂,例如可以举出:乙酰基过氧化磺酰环己烷、异丁酰基过氧化物、过氧化苯甲酰、过氧化辛酰、过氧化乙酰、过氧化二异丙苯、氢过氧化枯烯、偶氮二异丁腈等。相对于100重量份的酰亚胺化合物,自由基聚合剂的用量约0.01-1.0重量份为佳。
作为成分(C)的填料,包括银粉、金粉、铜粉等导电性(金属)填料;二氧化硅、氧化铝、氧化钛、玻璃、氧化铁、陶瓷等无机物质填料等。
在这些填料中,银粉、金粉、铜粉等导电性(金属)填料是为了赋予粘结剂导电性、热传导性或触变性的目的而添加。另外,二氧化硅、氧化铝、氧化钛、玻璃、氧化铁、陶瓷等无机物质填料是为了赋予粘结剂低热膨胀性、低吸湿率、触变性的目的而添加。这些物质可单独使用,或者2种以上组合使用。
作为提高半导体器件的电气可靠性的填料,也可以添加无机离子交换剂。作为无机离子交换剂,在热水中萃取胶固化物时,具有捕集被萃取到水溶液中的离子例如Na+、K+、Cl-、F-、RCOO-、Br-等离子者是有效的。这样的离子交换剂例如可以举出:天然产生的沸石、沸石类、酸性白土、白云石、水滑石等天然矿物,以及人工合成的沸石等。
这些导电性填料或无机物质填料,还可以2种以上混合使用。在不损害物性的范围内,也可以将1种以上的导电性填料与1种以上的无机物质填料混合使用。
相对于100重量份的成分(A)而言,填料的量一般在1-100重量份为宜,较佳的是2-50重量份。从赋予胶充分的触变性(触变指数:1.5以上)的角度考虑,填料的量最好是1重量份以上。此外,从粘结性的角度考虑,填料的量在100重量份以下为宜,超过此量时,配合量过多,固化物的弹性模数升高,结果,晶片接合材料的应力松弛能力下降,可以导致半导体器件的装配可靠性降低。
填料的混合和混炼,可以将常规的搅拌机、混砂机、三辊辗磨机、球磨机等分散机适当地组合使用来进行。
作为成分(D)的印刷用溶剂,可以从能将填料均匀混炼或分散的溶剂中选择。考虑到防止印刷时溶剂的挥发,优先选用沸点在100℃以上的溶剂。
作为上述印刷用溶剂,除了N-甲基-2-吡咯烷酮、二乙二醇二甲醚(也称为二甘醇二甲醚)、三乙二醇二甲醚(也称为三甘醇二甲醚)、二乙二醇二乙醚、2-(2-甲氧基乙氧基)乙醇、γ-丁内酯、异佛尔酮、卡必醇、乙酸卡必醇酯、1,3-二甲基-2-咪唑啉酮、醋酸2-(2-丁氧基乙氧基)乙酯、乙基溶纤剂、醋酸乙基溶纤剂、丁基溶纤剂、二噁烷、环己酮、苯甲醚之外,还有用来作为印刷用油墨的溶剂的以石油蒸馏物为主体的溶剂等。这些溶剂可单独作用,或者2种以上混合使用。
相对于100重量份的成分(A)而言,上述印刷用溶剂(D)的配合量通常在10-100重量份为宜。
在树脂胶的印刷过程中产生明显的气泡、空隙时,向上述印刷用溶剂(D)中添加脱泡剂、破泡剂、抑泡剂等非常有效。从发挥抑泡效果的角度考虑,其添加量最好是在溶(D)中达到0.01重量%以上,从粘结性或胶的粘度稳定性的考虑,最好是在溶剂(D)中为10重量%以下。
为提高接合力,还可以在树脂胶中适当地添加硅烷偶联剂、钛系偶联剂、非离子系表面活性剂、氟系表面活性剂、二氧化硅系添加剂等。
含有上述成分的树脂胶,其干燥固化后的弹性模数即胶的固化物的弹性模数为1-300MPa(25℃)。优选的是,其干燥固化后的弹性模数为1-100MPa(25℃)。
上述弹性模数是在动态粘弹性测定装置中测定胶固化物的贮存弹性模数E’时在25℃下得到的值。干燥固化后的树脂胶的弹性模数不足1时,衬底和晶片容易产生错动,组装操作有困难,因而不可取。若超过300MPa,衬底与晶片之间的应力松弛不足,半导体组件的耐温度循环特性下降。所谓“干燥固化后”,是指使树脂完全固化后。
此外,树脂胶的固体成分在40-90重量%为佳。上述固体成分在40重量%以上时,从抑制基于胶干燥后的体积减少的形状变化角度考虑是有利的,在90重量%以下时,从提高胶的流动性以及印刷操作性的角度考虑是有利的。
树脂胶的触变指数在1.5-8.0为佳。树脂胶的触变指数为1.5以上时,从抑制采用印刷法供给、涂布胶的胶中产生流挂、维持良好印刷形状的角度考虑是有利的。而且,此触变指数在8.0以下时,从抑制采用印刷法供给、涂布的胶中产生不连续(欠け)或残留突起(カスレ)等的角度考虑是有利的。
树脂胶的粘度(25℃)在5-1000Pa·s为佳。树脂胶的粘度为5-1000Pa·s时,从印刷操作性的角度考虑是有利的。树脂胶的粘度可以根据印刷方法的种类而适宜地调整,例如,像丝网版之类在掩模(mask)开口处张开筛网(mesh)的场合,考虑到筛网部的释放性,则5-100Pa·s的范围为佳,若是型版(stencil)的场合,则调整成20-500Pa·s的范围为佳。另外,干燥后胶中残存的空隙很多时,调整成150Pa·s以下的粘度是有效的。
上述的粘度,是使用E型旋转粘度计,在25℃和转速0.5rpm的条件下所测定的值。触变指数定义为,使用E型旋转粘度计在25℃下、以1rpm转速测定的值与以10rpm转速所测定的值的比值(触变指数=(1rpm的粘度)/(10rpm的粘度))。
所得到的晶片接合用树脂胶,可以采用印刷法供给、涂布到下列基材上:42合金引线框或铜引线框等的引线框;或是聚酰亚胺树脂、环氧树脂、聚酰亚胺系树脂等塑料薄膜;甚至是将聚酰亚胺树脂、环氧树脂、聚酰亚胺系树脂等塑料浸渗于玻璃无纺布等基材中并使之固化的产物;或者是氧化铝等陶瓷制的支撑部件;然后使之干燥、半固化(B阶化)。这样,得到带有B阶粘结剂的支撑衬底。在该带有B阶粘结剂的支撑衬底上,贴合IC、LSI等半导体元件(晶片)并加热,将晶片粘接到支撑衬底上。之后,使树脂胶后固化,将晶片搭载于支撑衬底上。该树脂胶的后固化,在组装步骤中没有问题的情况下,也可以于封装材的后固化步骤时合并进行。
本发明的半导体器件的制造方法,包含以上各步骤,本发明的半导体器件,是采用包含以上各步骤的制造方法而制造的。
上述晶片接合用树脂胶虽然含有溶剂,但用于半导体器件的制造方法时,由于在干燥步骤中B阶化,大部分的溶剂都挥发掉,因而晶片接合层中空隙很少,可组装成具良好装配可靠性的半导体器件。
另一方面,采用印刷法供给、涂布树脂胶后,只要对组件的可靠性没有影响,也可以不经干燥半固化直接贴合半导体元件,然后加热,将晶片粘结到支撑衬底上。
因此,本发明的另外的半导体器件的制造方法,包括在衬底上涂布规定量的上述晶片接合用树脂胶,将半导体晶片搭载于树脂胶上,使树脂胶中的树脂固化等各个工序。本发明的另外的半导体器件,是采用包含以上各步骤的制造方法而制造。
实施例
以下,通过实施例更具体地说明本发明。
实施例1
作为具有羧酸端基的丁二烯的均聚物或共聚物(A)(基础树脂),称取100重量份的CTBNX-1300×9(宇部兴产株式会社制造),放入混砂机内。向其中添加下述物料并进行混合:作为热固性树脂(B)预先准备好的25重量份的环氧树脂(YDCH-702)和15重量份的酚醛树脂(H-1)溶解于作为印刷用溶剂(D)的乙酸卡必醇酯(60重量份)中的溶液(热固性树脂的固体成分浓度约为40重量%,以及固化促进剂(TPPK)0.5重量份。然后,加入8重量份的作为填料(C)的二氧化硅细微粉末的AEROSIL,搅拌、混炼1小时,得到晶片接合用树脂胶(树脂胶No.1;固体成分71.2重量%)。
实施例2-5、比较例1
改变基础树脂、热固性树脂、填料和/或溶剂的种类以及配合量,与实施例1同样进行操作,得到晶片接合用树脂胶(树脂胶No.2-No.6;固体成分依序为68.3、72.5、65.5、67.3、44.5重量%;其中,No.6的树脂胶是用来做比较对照的)。
表1中示出树脂胶的配比。
表1中,各符号的含义如下。
CTBNX-1300×9:宇部兴产(株)制造,羧酸末端液状聚丁二烯(官能团数2.3/mol)
CTBN-1300×31:宇部兴产(株)制造,羧酸末端液状聚丁二烯(官能团数1.9/mol)
CTBN-1300×8:宇部兴产(株)制造,羧酸末端液状聚丁二烯(官能团数1.85/mol)
YDCH-702:东都化成(株)制造,甲酚-线型酚醛型环氧树脂(环氧当量220)
ESCN-195:日本化药(株),甲酚-线型酚醛型环氧树脂(环氧当量200)
H-1:明和化成(株),可溶可熔酚醛树脂(OH当量106)
VH-4170:大日本油墨化学工业(株),双酚A线型酚醛树脂(OH当量118)
TPPK:东京化成工业(株),四苯基磷四苯基硼酸盐
2P4MHZ:四国化成工业(株),CUREZOL(咪唑化合物)
AEROSIL:日本AEROSIL(株)、AEROSIL#380(二氧化硅细微粉末)
CA:乙酸卡必醇酯
NMP:N-甲基-2-吡咯烷酮
调和、混合后的晶片接合用树脂胶的粘度和触变指数示于表2中。粘度以及触变指数的测定方法如下面所述。
粘度:使用东机产业株式会社制E型粘度计,采用直径19.4mm、3°锥,测定25℃的树脂胶的粘度(0.5rpm)。
触变指数:使用上述粘度计测定各转速的粘度,按下式求出:触变指数=(1rpm的粘度)/(10rpm的粘度)。
对于所得到的树脂胶,测定晶片贴合温度分别为180℃和250℃时的剥离(peel)接合力。剥离接合力的测定方法如下所述。
在涂布了太阳油墨制造株式会社制造的solder resist PSR-4000AUS-5的有机衬底上,印刷树脂胶((1)在衬底上涂布预定量的胶的工序),在60℃下干燥15分钟,在100℃下干燥30分钟((2)在干燥步骤中B阶化的工序)后,将5×5mm的硅晶片在180℃或250℃的热盘上施加1000克的载荷,压接5秒((3)在B阶化的晶片接合用树脂上搭载半导体晶片的工序)。硅晶片按以下所述制备:将400μm厚的晶圆切成250μm厚,在内侧方向施加力并切割,使之在前端具有150μm厚的突起部。然后,在180℃下使之固化1小时((4)后固化工序)后,使用图1所示的测定装置,测定在250℃加热20秒时的剥离强度。
图1所示的测定装置是由推拉式测量计(push-pull gauge)改进而来,将由衬底1、晶片接合材(树脂胶)2和硅晶片3组成的叠层体置于热板10上,在用支架11和12固定的状态下,使挂在硅晶片3的突起部上的推拉式测量计13按照图中箭头所示的方向移动,检测移动时的载荷,可以测得树脂胶的晶片剥离强度。一般地说,其数值越高,则反流开裂(reflowcracking)越不容易发生。
如表2所示,No.1-5的树脂胶无论在180℃还是250℃都表现出高的剥离接合力,并且耐热性也很好。
使用No.1-6中得到的树脂胶,将硅晶片粘结在引线框上,测定粘结时的晶片翘曲。晶片翘曲测定按以下所述进行。
在150μm厚的古河电器工业株式会社制EF-TEC64T铜板上印刷树脂胶,在60℃下干燥15分钟,接着在100℃下干燥30分钟,形成膜厚40m的晶片接合材(晶片接合用树脂)。在其上面搭载大小为13mm×13mm、厚度400μm的硅晶片,施加1000g的载荷,在250℃下压合5秒。回复至室温(25℃)后,使用表面粗糙度计以直线状扫描11mm,求出距基线的最大高度(μm),作为晶片的翘曲度。
如表2所示,使用No.1-3的树脂胶时,晶片翘曲几乎为零,显示其具有良好的应力松弛能力。使用No.4和No.5的树脂时,虽然晶片翘曲比No.1-3要高,但与使用No.6(比较例)的树脂胶的情况相比,只有1/3以下,表示其仍具有足够的应力松弛能力。
使用动态粘弹性测定装置,测定固化后的薄膜的储存弹性模数E’,结果如表2所示。测定方法叙述于下。
在聚四氟乙烯薄膜上涂布晶片接合用树脂胶,使之固化后的膜厚为100μm,在150℃下预干燥60分钟,然后在180℃下固化60分钟。将固化后的膜从聚四氟乙烯薄膜上剥离下来,在以下条件下测定储存弹性模数,以25℃的值表示。
薄膜厚度:100μm,薄膜宽度:8mm,测定处长度:22.6mm,测定频率:1Hz,测定温度:-100℃至300℃,升温速度:5℃/分钟(min),测定气氛:氮气(N2),测定装置:Rheometric Scientific FE,Ltd.制造的粘弹性分析仪RSA-2。
表2
本发明的晶片接合用树脂胶,显示出极好的低应力性能,而且受热时的接合力优异。
依据本发明,对需要在较低温度下贴合半导体晶片的衬底,提供可以容易采用印刷法供给、涂布的晶片接合用树脂胶。另外,本发明的晶片接合用树脂胶具耐热性,容易操作处理,低应力性以及低温接合性优异。此外,与薄膜状粘结剂相比,对于衬底的附着力提高,因而组件的可靠性提高。做为晶片接合用,可适用于有机衬底等绝缘性支撑衬底或铜引线框,另外,还可以用于42合金引线框。
本申请所公开的内容与2004年6月18日申请的日本专利申请特願2004-180959号所记载的主题相关,籍由引起用此案作为本申请的内容。
除了上面所述之外,在不脱离本发明的新的、有利的特征的范围内,可以对上述实施方式加以各种修正和变更,所有这些修正和变更都包含在后附的权利要求的范围内。
Claims (9)
1.晶片接合用树脂胶,该树脂胶含有:(A)具有羧酸端基的丁二烯的均聚物或共聚物、(B)热固性树脂、(C)填料、以及(D)印刷用溶剂,相对于100重量份的所述成分(A),所述填料(C)的含量为1-100重量份,该树脂胶干燥固化后的弹性模数是1-300MPa(25℃)。
2.权利要求1所述的晶片接合用树脂胶,其固体成分为40-90重量%。
3.权利要求1或2所述的晶片接合用树脂胶,其触变指数为1.5-8.0,并且粘度(25℃)为5-1000Pa·s。
4.权利要求1或2所述的晶片接合用树脂胶,所述热固性树脂(B)包含甲酚-线型酚醛树脂型环氧树脂。
5.权利要求1或2所述的晶片接合用树脂胶,所述填料(C)包含二氧化硅。
6.半导体器件的制造方法,包括:
(1)在衬底上涂布规定量的权利要求1或2所述的晶片接合用树脂胶;
(2)将该树脂胶干燥,使该树脂B阶化;
(3)在B阶化后的上述树脂上搭载半导体晶片;以及
(4)将该树脂进行后固化。
7.采用权利要求6所述的半导体器件的制造方法制得的半导体器件。
8.半导体器件的制造方法,包括:
(1)在衬底上涂布规定量的权利要求1或2所述的晶片接合用树脂胶;
(2)在该树脂胶上搭载半导体晶片;以及
(3)使该树脂胶中的树脂固化。
9.采用权利要求8所述的半导体器件制造方法制得的半导体器件。
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JP4355010B2 (ja) * | 2006-10-04 | 2009-10-28 | 昭栄化学工業株式会社 | 積層電子部品用導体ペースト |
JP4975514B2 (ja) * | 2007-04-26 | 2012-07-11 | 信越化学工業株式会社 | ダイボンド剤及びこれを用いてなる半導体装置 |
KR100981396B1 (ko) * | 2007-09-28 | 2010-09-10 | 엘지이노텍 주식회사 | 반도체 패키지용 접착 페이스트 조성물 |
US7985662B2 (en) * | 2009-04-14 | 2011-07-26 | Powertech Technology Inc. | Method for manufacturing dies formed with a dielectric layer |
CN103167825B (zh) | 2010-08-23 | 2016-06-22 | 纽文思公司 | 外科入路系统及相关方法 |
KR101522117B1 (ko) | 2010-10-08 | 2015-05-20 | 다나카 기킨조쿠 고교 가부시키가이샤 | 반도체소자 접합용 귀금속 페이스트 |
CN103429688A (zh) * | 2011-03-14 | 2013-12-04 | 日立化成株式会社 | 半导体元件粘接用树脂糊剂组合物及半导体装置 |
CN103534327B (zh) * | 2011-04-05 | 2015-05-20 | 汉高知识产权控股有限责任公司 | 可b阶段化且无需固化的晶圆背面涂覆粘合剂 |
US8252631B1 (en) * | 2011-04-28 | 2012-08-28 | Freescale Semiconductor, Inc. | Method and apparatus for integrated circuit packages using materials with low melting point |
JP2013093564A (ja) * | 2011-10-04 | 2013-05-16 | Hitachi Chemical Co Ltd | ダイボンディング用樹脂ペースト、半導体装置の製造方法及び半導体装置 |
US9655505B1 (en) | 2012-02-06 | 2017-05-23 | Nuvasive, Inc. | Systems and methods for performing neurophysiologic monitoring during spine surgery |
US9066701B1 (en) | 2012-02-06 | 2015-06-30 | Nuvasive, Inc. | Systems and methods for performing neurophysiologic monitoring during spine surgery |
JP5945480B2 (ja) * | 2012-09-07 | 2016-07-05 | ナミックス株式会社 | 銀ペースト組成物及びその製造方法 |
US9757067B1 (en) | 2012-11-09 | 2017-09-12 | Nuvasive, Inc. | Systems and methods for performing neurophysiologic monitoring during spine surgery |
CN103497722B (zh) * | 2013-10-10 | 2015-05-13 | 南宁珀源化工有限公司 | 一种用于硅棒粘接的胶黏剂 |
KR102012788B1 (ko) | 2015-09-23 | 2019-08-21 | 주식회사 엘지화학 | 접착 필름, 반도체 장치의 제조 방법 및 반도체 장치 |
JP7184002B2 (ja) * | 2019-09-13 | 2022-12-06 | 味の素株式会社 | 樹脂組成物 |
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JP2003045902A (ja) * | 1996-10-08 | 2003-02-14 | Hitachi Chem Co Ltd | 半導体装置、半導体チップ搭載用基板、それらの製造法、接着剤、および、両面接着フィルム |
CN1237274A (zh) * | 1996-10-08 | 1999-12-01 | 日立化成工业株式会社 | 半导体装置、半导体芯片装载用基板、它们的制造方法、粘合剂和双面粘合膜 |
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JP2004018715A (ja) * | 2002-06-18 | 2004-01-22 | Hitachi Chem Co Ltd | 樹脂ペースト組成物及びこれを用いた半導体装置。 |
JP2004172443A (ja) * | 2002-11-21 | 2004-06-17 | Sumitomo Bakelite Co Ltd | ダイアタッチペースト及び半導体装置 |
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CN101323769B (zh) | 2011-04-13 |
US20070290369A1 (en) | 2007-12-20 |
WO2005124851A1 (ja) | 2005-12-29 |
CN100495671C (zh) | 2009-06-03 |
CN1950935A (zh) | 2007-04-18 |
KR100970312B1 (ko) | 2010-07-15 |
KR20080113446A (ko) | 2008-12-30 |
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