CN101313396A - 没有内藏大孔隙的Au-Sn合金凸块及其制造方法 - Google Patents

没有内藏大孔隙的Au-Sn合金凸块及其制造方法 Download PDF

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CN101313396A
CN101313396A CNA2005800521116A CN200580052111A CN101313396A CN 101313396 A CN101313396 A CN 101313396A CN A2005800521116 A CNA2005800521116 A CN A2005800521116A CN 200580052111 A CN200580052111 A CN 200580052111A CN 101313396 A CN101313396 A CN 101313396A
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石川雅之
小日向正好
三岛昭史
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Abstract

本发明提供没有内藏大孔隙的Au－Sn合金凸块及其制造方法。所述没有内藏大孔隙的Au－Sn合金凸块，其具有含有20.5～23.5质量％Sn、余量由Au和不可避免杂质构成的组成，并且在坯料中具有富Sn初晶相结晶析出0.5～30面积％的组织。

Description

没有内藏大孔隙的Au-Sn合金凸块及其制造方法
技术领域
本发明涉及没有内藏大孔隙、特别是没有内藏超过凸块(バンプ)径30％的大孔隙的Au-Sn合金凸块及其制造方法。
背景技术
一般来说，在GaAs光元件、GaAs高频元件、导热元件等半导体元件和基板的接合，要求微细且高气密性的SAW滤色器、水晶振荡器等组装密封等中使用Au-Sn合金软钎焊糊料。该Au-Sn合金软钎焊糊料所含的Au-Sn合金粉末已知为具有含有20质量％Sn、余量由Au和不可避免杂质构成的组成的Au-Sn共晶合金粉末，该Au-Sn共晶合金粉末通常经过气体喷散而获得。
还已知在基板上形成孔穴明显的干膜层，在将Au-Sn合金软钎焊糊料埋入在该干膜层的孔穴中后，将上述Au-Sn合金软钎焊糊料进行回流处理，在基板表面上形成Au-Sn合金凸块，除去干膜层作为电极等使用(参照非专利文献1)。
非专利文献1：第10次电子学的微接合·安装技术讨论论文集Vol.10.2004第95～100页(社团法人焊接学会2004年2月5日发行)
发明内容
但是，使用含有上述非专利文献1所记载的具有含有20质量％Sn、余量由Au和不可避免杂质构成的组成的Au-Sn合金粉末的糊料制作的Au-Sn合金凸块内部中会产生很大的孔隙、残留并内藏于其中，使用该大孔隙残留并内藏于内部的Au-Sn合金凸块接合半导体元件和基板等时，在接合部中也残留有大孔隙，该接合部的大孔隙成为断裂的起点，无法获得具有可靠性的Au-Sn合金软钎焊糊料的接合部。此时，Au-Sn合金凸块中内藏的孔隙为凸块径30％以下的小孔隙时，由于不能成为断裂的起点，因此不会降低接合部的可靠性。因而，寻求内部内藏大孔隙、特别是超过凸块径30％的大孔隙少的Au-Sn合金凸块。
因此，本发明人等为了获得内部内藏大孔隙少的凸块而进行研究。结果获得以下研究结果：使用将具有含有20.5～23.5质量％Sn、余量由Au和不可避免杂质构成的组成，并且在坯料中具有富Sn初晶相结晶析出0.5～30面积％的组织的Au-Sn合金粉末与焊剂混合，获得Au-Sn合金软钎焊糊料，使用获得的Au-Sn合金软钎焊糊料进行回流处理，从而获得的Au-Sn合金凸块中没有残留于凸块内部的大孔隙。
本发明根据该研究结果而完成，
(1)没有内藏大孔隙的Au-Sn合金凸块，其具有含有20.5～23.5质量％Sn、余量由Au和不可避免杂质构成的组成，并且在坯料中具有富Sn初晶相结晶析出0.5～30面积％的组织。
(2)没有内藏大孔隙的Au-Sn合金凸块制造方法，其特征在于，将具有含有20.5～23.5质量％Sn、余量由Au和不可避免杂质构成的组成，并且在坯料中具有富Sn初晶相结晶析出0.5～30面积％的组织的Au-Sn合金粉末与焊剂混合，获得Au-Sn合金软钎焊糊料，将该所得糊料涂覆成点状后，进行回流处理。
本发明的没有内藏大孔隙的Au-Sn合金凸块制造方法中使用的Au-Sn合金软钎焊糊料通过以下方法制造。首先，将具有含有20.5～23.5质量％Sn、余量由Au和不可避免杂质构成的组成的Au-Sn合金熔融，获得金属熔融液，将所得金属熔融液保持在温度：600℃～1000℃，在机械搅拌的同时或者在机械搅拌后将该搅拌的金属熔融液以压力：300～800kPa加压，同时在喷射压力：5000～8000kPa的压力下从具有直径1～2mm的小径喷嘴以喷嘴间隔为0.3mm以下喷射惰性气体，制造富Sn初晶相结晶析出0.5～30面积％的Au-Sn合金粉末。上述搅拌优选为机械搅拌，机械搅拌内更优选螺旋搅拌。上述机械搅拌还可以并用电磁搅拌等电搅拌，还可以在机械搅拌中并用电磁搅拌。上述机械搅拌的旋转速度并无特别限定，优选60～100r.p.m下螺旋搅拌3～10分钟。该Au-Sn合金粉末的制造方法中，当机械搅拌Au-Sn合金熔融液时，可以获得富Sn初晶相不会生长、增大，且没有富Au初晶相簇的Au-Sn合金熔融液，通过将该搅拌获得的Au-Sn合金熔融液喷散，在坯料中富Sn初晶相结晶析出0.5～30面积％，获得没有富Au初晶相的Au-Sn合金粉末。将如此获得的Au-Sn合金粉末与市售的含有松香、活性剂、溶剂和增粘剂的焊剂混合，制作Au-Sn合金软钎焊糊料。
不对具有含有20.5～23.5质量％Sn、余量由Au和不可避免杂质构成的组成的Au-Sn合金熔融液进行机械搅拌、直接气体喷散而获得的Au-Sn合金粉末即便富Sn初晶相结晶析出，其量也极少，其量不会超过0.4％。在将该富Sn初晶相结晶析出量少的Au-Sn合金粉末与市售的焊剂混合而获得的Au-Sn合金软钎焊糊料点状涂覆于基板上进行回流处理而获得的凸块中，内藏超过凸块径30％的大孔隙。
另一方面，上述具有富Sn初晶相结晶析出0.5～30面积％且无富Au初晶相的组织的Au-Sn合金粉末可以如下制造：对含有20.5～23.5质量％Sn、余量由Au和不可避免杂质构成的组成的Au-Sn合金熔融液进行机械搅拌，将该机械搅拌的Au-Sn合金熔融液喷散，从而制造。将作为该Au-Sn合金粉末与市售焊剂的混合体的Au-Sn合金软钎焊糊料点状涂覆在基板上进行回流处理而获得的凸块，其内在的孔隙的数量少，同时完全没有产生超过凸块径30％的大孔隙。
将本发明Au-Sn合金凸块所含的Sn含量限定于20.5～23.5质量％的原因在于，凸块所含Sn的含量小于20.5质量％时，富Au初晶相结晶析出、熔点增高、熔融液粘性增高，在糊料熔融中产生的气体被捕获在基板附近，在凸块内部残留孔隙，因此不优选；而当Sn的含量超过23.5质量％时，即便对金属熔融液进行机械搅拌，粗大的富Sn初晶相也会结晶析出，而且富Sn初晶相整体结晶析出超过30面积％，孔隙难以从凸块内部除去，残留于凸块内部，因此不优选。
将在用于制作本发明Au-Sn合金凸块所用的Au-Sn合金糊料所含Au-Sn合金粉末中结晶析出的富Sn初晶相限定为结晶析出0.5～30面积％的原因在于，在Au-Sn合金粉末的截面中结晶析出的富Sn初晶相的量小于0.5面积％时，产生富Au初晶相，该Au富含相与其它共晶组织部相比，熔点增高，因此在相同温度下熔融液粘性高，在糊料熔融中产生的气体被捕获，成为孔隙产生的原因，因此不优选；另一方面，当在Au-Sn合金粉末的截面中富Sn初晶相结晶析出超过30面积％时，粉末的熔点明显地向高温移动，富Sn初晶相的比例增高，通过从共晶点位移，熔点增高、熔融液的粘度增高、流动性降低，在糊料熔融时产生的气体被捕获，成为孔隙产生的原因，因此不优选。用于制作本发明Au-Sn合金凸块所用Au-Sn合金糊料所含Au-Sn合金粉末中结晶析出的富Sn初晶相的结晶析出量更优选的范围为10～20面积％。
本发明的Au-Sn合金凸块由于内部没有内藏超过凸块径30％的大孔隙，因此与以往的Au-Sn合金凸块相比，由孔隙起点所导致的断裂发生可能性低、接合部的可靠性优异，半导体装置的不良品发生率也减少，可以降低成本，获得产业上优异的效果。
附图说明
图1为Au-Sn合金凸块1截面的金属显微镜组织照片。
图2为Au-Sn合金凸块2截面的金属显微镜组织照片。
图3为Au-Sn合金凸块3截面的金属显微镜组织照片。
图4为Au-Sn合金凸块4截面的金属显微镜组织照片。
图5为Au-Sn合金凸块5截面的金属显微镜组织照片。
图6为Au-Sn合金凸块6截面的金属显微镜组织照片。
图7为Au-Sn合金凸块7截面的金属显微镜组织照片。
图8为Au-Sn合金凸块8截面的金属显微镜组织照片。
图9为Au-Sn合金凸块9截面的金属显微镜组织照片。
图10为Au-Sn合金凸块10截面的金属显微镜组织照片。
图11为Au-Sn合金凸块11截面的金属显微镜组织照片。
具体实施方式
在高频熔融炉中熔融具有表1所示成分组成的Au-Sn合金，将所得金属熔融液保持在表1所示温度，同时以表1所示旋转数使螺旋杆旋转表1所示时间，对金属熔融液进行机械搅拌的同时或者机械搅拌之后，向金属熔融液施加表1所示压力，从设置于高频熔融炉底部的喷嘴使金属熔融液落下，同时从喷嘴周围按照喷嘴间隔为0.2mm而设置的表1所示直径的气体喷嘴向落下的金属熔融液以表1所示喷射压力喷射Ar气体，从而制作气体喷散粉末，利用筛子过筛该气体喷散粉末，制作平均粒径具有20μm的Au-Sn合金粉末。
将这些Au-Sn合金粉末埋入树脂进行截面研磨，使用EPMA拍摄截面，在该EPMA图像中，随机选择粉末截面直径为15μm的10个样品，使用图像处理软件求得富Sn初晶相占富Sn初晶相粉末截面积的面积％，将其结果示于表1中。
在这些Au-Sn合金粉末中以焊剂比例为7质量％混合市售的RMA焊剂，制作Au-Sn合金软钎焊糊料1～11。
接着，使用这些Au-Sn合金软钎焊糊料1～11进行下述测定。
首先，准备具有长：10mm、宽：10mm、厚：1mm尺寸的含有Si的板，在该板的表面上形成厚度0.5μm的Al溅射膜后，在其上形成厚度0.5μm的Ni-V合金溅射膜，再在其上形成1.0μm的Cu溅射膜，在形成有该Cu溅射膜的板上形成具有直径95μm的孔穴、具有厚度70μm的干膜层，在上述干膜层的孔穴中填充上述Au-Sn合金软钎焊糊料1～11，进行回流处理(预加热150℃/60秒+主加热320℃/60秒)，从而分别制作1000个具有直径80μm、高度60μm尺寸的Au-Sn合金凸块1～11。用1000倍的金属显微镜观察这些Au-Sn合金凸块1～11的截面，拍摄该截面的组织照片，将其组织照片示于图1～11。之后，根据上述组织照片使用图像处理软件测定富Sn初晶相占Au-Sn合金凸块1～11截面积的面积％，将它们的测定结果示于表1中。
分别抽出240个Au-Sn合金凸块1～11，分别使用透射X射线装置对该240个Au-Sn合金凸块1～11测定凸块内藏的孔隙数量和直径，以孔隙径相对于凸块径的比例求得，分类成孔隙径为凸块径10％以下的孔隙、孔隙径为凸块径的超过10％～20％以下的孔隙、孔隙径为凸块径的超过20％～30％以下的孔隙、孔隙径超过凸块径30％的孔隙，求得这些分类的孔隙数量，将它们的结果示于表2中。
Figure A20058005211100081
Figure A20058005211100091
由图1～11和表2所示的结果可知，含有20.5～23.5质量％Sn的Au-Sn合金凸块4～8(本发明凸块)不会产生超过凸块径30％的大孔隙，但含有18.1～18.9质量％Sn的Au-Sn合金凸块1～2(比较凸块)、含有20.1质量％Sn的Au-Sn合金凸块3(现有凸块)和含有24.1～30.0质量％Sn的Au-Sn合金凸块9～11(比较凸块)均会产生超过凸块径30％的大孔隙，因此不优选。

Claims (2)

1.没有内藏大孔隙的Au-Sn合金凸块，其具有含有20.5～23.5质量％Sn、余量由Au和不可避免杂质构成的组成，并且在坯料中具有富Sn初晶相结晶析出0.5～30面积％的组织。
2.没有内藏大孔隙的Au-Sn合金凸块制造方法，其特征在于，将具有含有20.5～23.5质量％Sn、余量由Au和不可避免杂质构成的组成，并且在坯料中具有富Sn初晶相结晶析出0.5～30面积％的组织的Au-Sn合金粉末与焊剂混合，获得Au-Sn软钎焊糊料，将所得糊料涂覆成点状后，进行回流处理。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102986013A (zh) * 2010-04-28 2013-03-20 美敦力公司 具有电互连的气密晶片间结合
CN106119589A (zh) * 2015-04-09 2016-11-16 韩国电子通信研究院 用于三维打印的贵金属材料、其制法和使用其的三维打印方法
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009151123A1 (ja) * 2008-06-12 2009-12-17 三菱マテリアル株式会社 はんだペーストを用いた基板と被搭載物の接合方法
US8513120B2 (en) 2010-04-29 2013-08-20 Medtronic, Inc. Gold-tin etch using combination of halogen plasma and wet etch

Family Cites Families (12)

* Cited by examiner, † Cited by third party
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US4758272A (en) * 1987-05-27 1988-07-19 Corning Glass Works Porous metal bodies
JPS6431907A (en) * 1987-07-27 1989-02-02 Nippon Kokan Kk Apparatus for producing metal powder
JPH02115307A (ja) * 1988-10-25 1990-04-27 Daido Steel Co Ltd 金属溶湯の噴霧方法及びそのための注湯装置
JPH04262895A (ja) * 1991-02-15 1992-09-18 Tanaka Kikinzoku Kogyo Kk 金属極微小球の製造方法
JP3446798B2 (ja) 1996-11-29 2003-09-16 日本特殊陶業株式会社 接合バンプ付き配線基板
CN1157497C (zh) * 2000-04-12 2004-07-14 林忠华 自催化镍-锡-磷合金镀液及其镀层
JP2001176999A (ja) * 2000-11-27 2001-06-29 Tanaka Kikinzoku Kogyo Kk 電子部品の気密封止方法
JP4051661B2 (ja) * 2001-09-28 2008-02-27 三菱マテリアル株式会社 はんだペースト用Ａｕ−Ｓｎ合金粉末
JP2003260588A (ja) * 2002-03-08 2003-09-16 Mitsubishi Materials Corp 濡れ広がりの少ないはんだペースト用Ａｕ−Ｓｎ合金粉末
JP4769469B2 (ja) * 2004-02-20 2011-09-07 田中貴金属工業株式会社 Ａｕ−Ｓｎ系ろう材による接合方法
JP4560830B2 (ja) * 2004-06-28 2010-10-13 三菱マテリアル株式会社 はんだペースト用Ａｕ−Ｓｎ合金粉末
KR101141089B1 (ko) 2004-06-28 2012-05-03 미쓰비시 마테리알 가부시키가이샤 땜납 페이스트용 Ａｕ－Ｓｎ합금분말

Cited By (4)

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CN102986013B (zh) * 2010-04-28 2016-02-10 美敦力公司 具有电互连的气密晶片间结合
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