TW200720004A - Au-sn alloy bump having no trapped-in large void and process for producing the same - Google Patents

Au-sn alloy bump having no trapped-in large void and process for producing the same

Info

Publication number
TW200720004A
TW200720004A TW094141743A TW94141743A TW200720004A TW 200720004 A TW200720004 A TW 200720004A TW 094141743 A TW094141743 A TW 094141743A TW 94141743 A TW94141743 A TW 94141743A TW 200720004 A TW200720004 A TW 200720004A
Authority
TW
Taiwan
Prior art keywords
trapped
alloy bump
producing
large void
same
Prior art date
Application number
TW094141743A
Other languages
English (en)
Other versions
TWI341225B (zh
Inventor
Masayuki Ishikawa
Masayoshi Kohinata
Akifumi Mishima
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of TW200720004A publication Critical patent/TW200720004A/zh
Application granted granted Critical
Publication of TWI341225B publication Critical patent/TWI341225B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
TW094141743A 2005-11-21 2005-11-28 Au-sn alloy bump having no trapped-in large void and process for producing the same TW200720004A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005336084A JP4826735B2 (ja) 2005-11-21 2005-11-21 大きなボイドを内蔵することのないＡｕ−Ｓｎ合金バンプの製造方法

Publications (2)

Publication Number Publication Date
TW200720004A true TW200720004A (en) 2007-06-01
TWI341225B TWI341225B (zh) 2011-05-01

Family

ID=38048374

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094141743A TW200720004A (en) 2005-11-21 2005-11-28 Au-sn alloy bump having no trapped-in large void and process for producing the same

Country Status (7)

Country Link
US (1) US8721961B2 (zh)
EP (1) EP1953811A4 (zh)
JP (1) JP4826735B2 (zh)
KR (1) KR101235540B1 (zh)
CN (1) CN101313396B (zh)
TW (1) TW200720004A (zh)
WO (1) WO2007057982A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102047397B (zh) * 2008-06-12 2013-10-16 三菱综合材料株式会社 使用锡焊膏进行的基板与焊件的接合方法
CN102986013B (zh) * 2010-04-28 2016-02-10 美敦力公司 具有电互连的气密晶片间结合
US8513120B2 (en) 2010-04-29 2013-08-20 Medtronic, Inc. Gold-tin etch using combination of halogen plasma and wet etch
KR101839876B1 (ko) * 2015-04-09 2018-03-20 한국전자통신연구원 3d 프린팅용 귀금속 소재, 그 제조 방법, 및 그 소재를 이용한 3d 프린팅 방법
US10612112B2 (en) 2015-04-09 2020-04-07 Electronics And Telecommunications Research Institute Noble metal material for 3-dimensional printing, method for manufacturing the same, and method for 3-dimensional printing using the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758272A (en) * 1987-05-27 1988-07-19 Corning Glass Works Porous metal bodies
JPS6431907A (en) * 1987-07-27 1989-02-02 Nippon Kokan Kk Apparatus for producing metal powder
JPH02115307A (ja) * 1988-10-25 1990-04-27 Daido Steel Co Ltd 金属溶湯の噴霧方法及びそのための注湯装置
JPH04262895A (ja) * 1991-02-15 1992-09-18 Tanaka Kikinzoku Kogyo Kk 金属極微小球の製造方法
JP3446798B2 (ja) 1996-11-29 2003-09-16 日本特殊陶業株式会社 接合バンプ付き配線基板
CN1157497C (zh) * 2000-04-12 2004-07-14 林忠华 自催化镍-锡-磷合金镀液及其镀层
JP2001176999A (ja) * 2000-11-27 2001-06-29 Tanaka Kikinzoku Kogyo Kk 電子部品の気密封止方法
JP4051661B2 (ja) * 2001-09-28 2008-02-27 三菱マテリアル株式会社 はんだペースト用Ａｕ−Ｓｎ合金粉末
JP2003260588A (ja) * 2002-03-08 2003-09-16 Mitsubishi Materials Corp 濡れ広がりの少ないはんだペースト用Ａｕ−Ｓｎ合金粉末
JP4769469B2 (ja) * 2004-02-20 2011-09-07 田中貴金属工業株式会社 Ａｕ−Ｓｎ系ろう材による接合方法
JP4560830B2 (ja) * 2004-06-28 2010-10-13 三菱マテリアル株式会社 はんだペースト用Ａｕ−Ｓｎ合金粉末
KR101141089B1 (ko) 2004-06-28 2012-05-03 미쓰비시 마테리알 가부시키가이샤 땜납 페이스트용 Ａｕ－Ｓｎ합금분말

Also Published As

Publication number Publication date
JP4826735B2 (ja) 2011-11-30
KR20080069187A (ko) 2008-07-25
US8721961B2 (en) 2014-05-13
US20080304999A1 (en) 2008-12-11
EP1953811A1 (en) 2008-08-06
JP2007136523A (ja) 2007-06-07
CN101313396B (zh) 2010-05-12
CN101313396A (zh) 2008-11-26
WO2007057982A1 (ja) 2007-05-24
TWI341225B (zh) 2011-05-01
KR101235540B1 (ko) 2013-02-21
EP1953811A4 (en) 2009-04-01

Similar Documents

Publication Publication Date Title
TW200720004A (en) Au-sn alloy bump having no trapped-in large void and process for producing the same
EG25433A (en) Free-cutting copper alloy containing very low lead
TW200604354A (en) Copper alloy
SG152255A1 (en) Compositions comprising nebivolol
ATE486618T1 (de) Medizinische vorrichtungen mit legierungen
MY142409A (en) Novel cannabinoid 1 or cannabinoid 2 receptor modulators, pharmaceutical compositions containing them, and process for their preparation
MY157365A (en) Chemical compounds and uses
ATE240417T1 (de) Hochfester rostfreier automatenstahl
DE602005024787D1 (de) Hochfeste titanlegierung vom alpha+beta-typ
MX2007011944A (es) Material de acero con alta resitencia a la traccion que tiene excelente propiedad de resistencia a la fractura retrasada, y su metodo de fabricacion.
WO2007024697A3 (en) Electronic grade metal nanostructures
WO2007133528A3 (en) Alloy compositions and techniques for reducing intermetallic compound thickness and oxidation of metals and alloys
ZA201003221B (en) Tea composition and process for the manufacture thereof
MY142129A (en) Amorphous lercanidipine hydrochloride
WO2012075993A3 (de) VERFAHREN ZUM HERSTELLEN EINER AlScCa-LEGIERUNG SOWIE AIScCa-LEGIERUNG
WO2005098064A3 (en) Β titanium compositions and methods of manufacture thereof
MA31603B1 (fr) Nouvelle forme cristalline du 3-(difluorométhyle)-1-méthyle-n-(3',4',5'-trifluoro[1,1'-biphenyl]-2-yl)-1h-pyrazole-4-carboxamide
SG162734A1 (en) Compositions comprising nebivolol
WO2006133163A3 (en) Internal gettering by metal alloy clusters
WO2009078467A1 (ja) 銅合金向けエレクトロスラグ再溶解用スラグおよび銅合金材の製造方法
TW200504229A (en) Copper alloy with high strength and high conductivity
TW200708624A (en) Method of manufacturing the SnZnNiCu solder powder and the SnZnNiCu solder powder
ATE334775T1 (de) Bleifreies weichlot
TW200622008A (en) Weight made of tungsten based sintered alloy, its production method and vibrator for vibration generator
UA6742U (en) A method for the out-of-furnace cast iron processing with powdered wire