CN101305072A - 具有改进的CaAlSiN光转换材料的发光器件 - Google Patents

具有改进的CaAlSiN光转换材料的发光器件 Download PDF

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CN101305072A
CN101305072A CNA2006800414706A CN200680041470A CN101305072A CN 101305072 A CN101305072 A CN 101305072A CN A2006800414706 A CNA2006800414706 A CN A2006800414706A CN 200680041470 A CN200680041470 A CN 200680041470A CN 101305072 A CN101305072 A CN 101305072A
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caalsin
converting material
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P·J·施米特
J·迈耶
W·迈尔
W·巴塞尔特
H·-H·贝克特尔
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Koninklijke Philips NV
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Abstract

具有发射初级光的光源和将至少一部分初级光转换成二级光的发光层的发光器件,其中该光转换层含有CaAlSiN光转换材料,该CaAlSiN光转换材料对于波长>580到≤1000nm范围内的光的透射率为>10%到≤80%。

Description

具有改进的CaAlSiN光转换材料的发光器件
本发明涉及发光器件,特别是涉及LED领域。
所谓的磷光体转换的发光器件(phosphor converted light emittingdevice),其包含电致发光光源和至少部分吸收从该光源发出的光并重新发射较长波长的二级光(secondary light)的光转换元件,是现有技术已知的。最近,对含有CaAlSiN光转换磷光体材料的LED领域已经进行了研究,并且在这点上已经发现此类材料可以在LED中使用。实例例如描述于作为参考文献并入本文的EP05101834.9中。
然而,尽管该文献中描述的磷光材料显示出良好的光学特性,但是对于LED的要求,特别是在汽车中使用的LED,在多数应用中需要更高的效率和温度稳定性。
本发明的目的就是提供含有具有改进的效率和温度稳定性的CaAlSiN光转换材料的发光器件。
该目的通过具有发射初级光(primary light)的光源和将至少一部分初级光转换成二级光的光转换层的发光器件得以解决,其中所述光转换层含有对于波长范围≥580至≤1000nm中的光透射率为≥10%至≤80%的CaAlSiN光转换材料。从而,提供发光器件,尤其是LED,其包含对于波长范围≥580至≤1000nm中的光透射率为≥10%至≤80%的CaAlSiN光转换材料。所述光源可以是选自无机LED、有机LED或激光二极管的一个或多个光源。
术语“CaAlSiN光转换材料”特别包含和/或包括以下材料:(Ca1-x-y-zSrxBayMgz)1-nAl1-a+bBaSi1-bN3-bOb:Mn
其中0≤x,y,z≤1,0≤a≤1,0≤b<1,0≤n≤1,M是金属,根据本发明的实施方案M选自包含Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或它们的混合物的组,
以及这些材料和添加剂的混合物,所述添加剂可在陶瓷加工过程中加入。这些添加剂可以全部或部分混入最终材料,从而最终材料也可以是几种化学上不同的物种(species)的复合材料(CaAlSiN晶粒包埋进组成略微不同的玻璃状基质(glassy matrix)中),并且特别包括本领域中已知的例如熔剂(fluxes)的物种。适合的熔剂包括碱土金属或碱金属氧化物和氟化物、SiO2等。
术语“透射率”在本发明中特别是指对于在空气中垂直入射,≥10%,根据本发明的实施方案≥20%,根据本发明的实施方案≥30%,根据本发明的实施方案≥40%并≤80%的某个波长的入射光,不能被所述材料吸收,传播穿过试样。根据本发明的实施方案该波长在≥580并≤1000nm的范围。
当使用此类CaAlSiN光转换材料时,发光器件的特性在多数应用中可得到较大的改善(如对于下文将要描述的一些应用)。
根据本发明的实施方案,CaAlSiN光转换材料发射在红色可见光波长区域内的二级光,最大强度在≥590nm到≤700nm的波长处。这使得可以构造具有改进的特性的发光器件。根据本发明的实施方案,CaAlSiN光转换材料具有在红色可见光波长区内的发射带(emission band),最强处在≥600nm至≤680nm,根据本发明的实施方案最强处在≥620nm至≤670nm。
根据本发明的实施方案,CaAlSiN光转换材料发射具有半宽(half-width)为≥50nm至≤150nm的波长分布的二级光。这导致尖锐发射(sharp emission),其使得能够进一步改进发光器件。根据本发明的实施方案,CaAlSiN光转换材料发射具有半宽为≥60nm至≤110nm的波长分布的二级光。
根据本发明的实施方案,CaAlSiN光转换材料具有理论单晶密度的≥97%至≤100%的密度。从而,该CaAlSiN光转换材料相对于密度较低的材料呈现有较大改善的力学和光学特性。根据本发明的实施方案,CaAlSiN光转换材料具有理论单晶密度的≥98%至≤100%的密度,根据本发明的实施方案具有理论单晶密度的≥99%至≤100%的密度。
根据本发明的实施方案,CaAlSiN光转换材料是多晶材料。
术语“多晶材料”在本发明中特别是指这样的材料,该材料的体积密度(volume density)大于主要成分的90%,由多于80%的单晶晶畴(single crystaldomains)组成(每个晶畴的直径大于0.5μm并具有不同的结晶取向(crystallographic orientations))。所述单晶晶畴可以通过无定形或玻璃态物质或通过额外的晶体成分连接。
根据本发明的实施方案,CaAlSiN光转换材料是陶瓷材料。
术语“陶瓷材料”在本发明中特别是指具有受控的孔数量或无孔的结晶或多晶致密材料(compact material)或复合材料。
根据本发明的实施方案,陶瓷材料的厚度D是30μm≤D≤5000μm,根据本发明的实施方案60μm≤D≤2000μm,和根据本发明的实施方案80μm≤D≤1000μm。
根据本发明的实施方案,在≥50℃到≤150℃的整个温度范围内,CaAlSiN光转换材料在红色可见光波长范围中二级光发射的最强处和/或半宽的偏移(shift)≤20nm。从而,发光器件在使用过程中,例如在汽车中使用时,将呈现出恒定的行为。
根据本发明的实施方案,在≥0℃到≤200℃的整个温度范围内,和根据本发明的实施方案在≥-40℃至≤250℃的整个温度范围内,CaAlSiN光转换材料在红色可见光波长范围发射带的最强处和/或半宽的偏移为≥0nm至≤20nm。
根据本发明的实施方案,在≥50℃到≤150℃的整个温度范围内,根据本发明的实施方案在≥0℃至≤200℃的整个温度范围内和根据本发明的实施方案在≥-40℃至≤250℃的整个温度范围内,CaAlSiN光转换材料在红色可见光波长范围内二级光发射中的最强处和/或半宽的偏移为≥5nm至≤18nm。根据本发明的实施方案,在≥50℃至≤150℃整个温度范围内,根据本发明的实施方案在≥0℃至≤200℃的整个温度范围内和根据本发明的实施方案在≥-40℃至≤250℃的整个温度范围内,CaAlSiN光转换材料在红色可见光波长范围内二级光发射中的最强处和/或半宽的偏移为≥10nm至≤15nm。
根据本发明的实施方案,CaAlSiN光转换材料选自含有(Ca1-x-y-zSrxBayMgz)1-nAl1-a+bBaSi1-bN3-bOb:REn的材料,其中0≤x,y,z≤1,0≤a≤1,0≤b<1,0≤n≤1,RE选自含有Eu、Ce或它们的混合物的组。
根据本发明的实施方案,CaAlSiN光转换材料选自含有(Ca1-x-y-zSrxBayMgz)1-nAl1-a+bBaSi1-bN3-bOb:Mn的材料,其中0≤x,y,z≤1,0≤a≤1,0≤b<1,0.002≤n≤0.2,M是金属,根据本发明的实施方案选自含有Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或它们的混合物的组。
根据本发明的实施方案,CaAlSiN光转换材料选自含有(Ca1-x-y-zSrxBayMgz)1-nAl1-a+bBaSi1-bN3-bOb:REn的材料,其中0≤x,y,z≤1,0≤a≤1,0≤b<1,0.002≤n≤0.2,RE选自含有Eu、Ce或它们的混合物的组。
根据本发明的实施方案,CaAlSiN光转换材料选自含有((Ca1-x-y-zSrxBayMgz)1-05*k*nREk+ n)1-a(Al1-mBm)bSi2-bN3-oOo的材料,其中0≤x,y,z≤1,0≤m≤1,0.002≤n≤0.2,b<o+1,a=0.5(1-o+b),0≤o≤1,k=2或3,RE选自含有Eu、Ce或它们的混合物的组。
根据本发明的实施方案,CaAlSiN光转换材料选自含有((Ca1-x-y-zSrxBayMgz)1-0.5*k*nREk+ n)1-a(Al1-mBm)bSi2-bN3-oOo的材料,其中0≤x,y,z≤1,0≤m≤1,0.002≤n≤0.2,b<o+1,a=0.5(1-o+b),RE选自含有Eu、Ce或它们的混合物的组,其中0≤o≤0.15;根据另一个优选实施方案0≤o≤0.01,根据第三优选实施方案0≤o≤0.02。
根据本发明的实施方案,CaAlSiN光转换材料选自含有((Ca1-x-y-zSrxBayMgz)1-0.5*k*nREk+ n)1-a(Al1-mBm)bSi2-bN3-oOo的材料,其中0≤x,y,z≤1,0≤m≤1,0.002≤n≤0.2,b<o+1,a=0.5(1-o+b),RE选自含有Eu、Ce或它们的混合物的组,其中0≤o≤0.15;根据另一个优选实施方案0.01≤o≤0.15,根据第三优选实施方案0.02≤o≤0.1。
根据本发明的实施方案,CaAlSiN光转换材料的玻璃相(glass phase)比例为≥2vol%至≤5vol%,根据本发明的实施方案为≥3vol%至≤4vol%。实践表明,具有这样的玻璃相比例的材料呈现出改善的特性,这对本发明是有利的并且是所希望的。术语“vol%”表示以百分数给出的体积分数。
术语“玻璃相”在本发明中特别是指非晶晶界相(non-crystalline grainboundary phase),其可以通过扫描电子显微镜或透射电子显微镜检测。
根据本发明的优选实施方案,CaAlSiN光转换材料表面的表面粗糙度RMS(表面平面性的破坏;作为最高表面特征和最低表面特征之间差异的几何平均数测量)为≥0.001μm且≤100μm。根据本发明的实施方案,CaAlSiN光转换材料表面的表面粗糙度为≥0.01μm且≤10μm,根据本发明的实施方案为≥0.1μm且≤5μm,根据本发明的实施方案为≥0.15μm且≤3μm,和根据本发明的实施方案为≥0.2μm和≤2μm。
根据本发明的优选实施方案,CaAlSiN光转换材料结构的比表面积为≥10-7m2/g且≤1m2/g。
本发明进一步涉及生产用于根据本发明的发光器件的CaSlSiN光转换材料的方法,其包含烧结步骤。
术语“烧结步骤”在本发明中特别是指在热的影响下致密化前体粉末,其可与施加单轴或等静压力(uniaxial or isostatic pressure)联合,而不使被烧结材料的主要成分达到液态。
根据本发明的实施方案,烧结步骤在环境压力下实施,优选在减压或惰性气氛中实施。
根据本发明的实施方案,所述方法进一步包含在烧结前将CaAlSiN前体材料压到其理论单晶密度的≥50%至≤70%,根据本发明的实施方案≥55%至≤60%的步骤。实践显示,这改善本发明所描述的绝大多数CaAlSiN光转换材料的烧结步骤。
根据本发明的实施方案,生产用于根据本发明的发光器件的CaAlSiN光转换材料的方法包含以下步骤:
(a)混合用于CaAlSiN光转换材料的前体材料
(b)任选地,煅烧(firing)前体材料,优选在≥1300℃至≤1800℃的温度,以除去挥发性物质(在使用碳酸盐的情况下例如CO2)
(c)任选地,研磨和洗涤
(d)第一压制步骤,优选使用具有所希望的形状(如棒状或丸粒状)的模具使用适合的粉末压制工具在≥10kN下的单轴压制步骤,和/或冷等静压压制步骤(cold isostatic pressing step)(优选在≥3000巴至≤3500巴)
(e)在≥1500℃至≤2200℃在环境压力下的烧结步骤
(f)热压制步骤,优选热等静压压制步骤,优选在≥100巴至≤2500巴下和优选在≥1500℃至≤2000℃的温度下,和/或热单轴压制步骤,优选在≥100巴至≤2500巴下和优选在≥1500℃至≤2000℃的温度下
(g)任选地,在惰性气氛或空气中在>1000℃至<1700℃进行的后退火步骤
根据本发明的实施方案,发光器件包含发光二极管(LED),根据本发明的实施方案包含基于作为电致发光材料的AlInGaN材料的LED。
根据本发明的实施方案,发光器件包含第一光转换材料,根据本发明的实施方案包含陶瓷第一光转换材料,和第二光转换材料。
根据本发明的实施方案,该第二光转换材料含有YAG:Ce材料。这些材料已经在实践中证明其本身适合于本发明范围内的许多应用。
根据本发明的实施方案,发光器件具有≥3000K至≤5000K的色温,根据本发明的实施方案为3500K至≤4000K。
本发明还包括制备根据本发明的发光器件的方法,其包含以下步骤:
(a)至少提供含有如上所述的CaAlSiN第一光转换材料和至少第二发光颜色转换剂(luminescent color converter)的LED
(b)测量发光器件的色温
(c)调整发光器件的色温
其中,可以任意地(ad libitum)重复步骤(b)和(c)。
该方法使得对于多数应用能够按照所希望的那样限定发光器件的色温,并且对于多数应用还使得能够即使在生产后也能够调整发光器件的色温。
根据本发明的实施方案,步骤c)通过CaAlSiN材料和/或第二发光颜色转换剂材料的磨损来实施。
根据本发明的实施方案,步骤c)通过改变CaAlSiN光转换材料和第二光转换材料的数量比来实施。
根据本发明的实施方案,这通过使用CaAlSiN光转换材料和第二发光颜色转换剂材料的板或条实施,其被横向布置在LED芯片的发光区域之上。颜色调节通过改变CaAlSiN光转换材料的板或条与第二光转换材料的板或条的比率来实施。
根据本发明的实施方案,颜色调节通过使用几种预制的LED芯片实施,所述LED芯片含有某些不同比例的CaAlSiN光转换材料和第二发光颜色转换剂材料,或只含有这两种材料中的一种,因此,调节可以通过改变不同LED芯片在发光器件中的亮度或某种类型的LED的数量来实施。第一种选择将得到颜色可调的器件。
此外,色温可以通过改变CaAlSiN光转换材料和第二发光颜色转换剂材料中的掺杂水平,或通过改变CaAlSiN光转换材料和第二光转换材料的主晶格(例如,在YAG材料的情况下通过加入Ga、Gd或Lu,和/或在CaAlSiN光转换材料的情况下加入Sr、Ba、Mg或O),进行设定。这些手段可以单独使用或与上述方法联合使用。
根据本发明的发光器件以及使用本发明方法生产的CaAlSiN光转换材料可以在各种系统和/或应用中使用,它们之中可以提及以下一种或几种:
——办公室照明系统
——家庭应用系统
——商店照明系统
——家庭照明系统
——重点照明系统(accent lighting system)
——聚光照明系统(spot lighting system)
——剧院照明系统(theater lighting system)
——纤维光学应用系统(fiber-optics application system)
——投射系统(proj ection system)
——自照明展示系统(self-lit display system)
——像素化显示系统(pixilated display system)
——分段式显示系统(segmented display system)
——警告标记系统(warning sign system)
——医学照明应用系统
——指示标记系统(indicator sign system),和
——装饰照明系统
——便携系统
——汽车应用
——温室照明系统。
上述组分,以及所要求保护的组分和根据本发明将在所述实施方案中使用的组分,就它们的尺寸、形状、材料选择和技术概念而言没有任何特殊例外,从而可以没有限制地使用相关领域中公知的选择标准。
本发明目的的其它细节、特征和优点公开于从属权利要求、附图和各附图和实施例的下述描述中,其以示例性的方式示出用于本发明发光器件中的CaAlSiN光转换材料的实施方案。
图1示出包含根据本发明的实施例I的CaAlSiN光转换材料的LED的发射光谱。
实施例I:
图1指的是(Ca0.95Sr0.05)0.98AlSiN3:Eu0.02(实施例I),其按如下方式制造:
从6.894g Ca3N2(Alfa Aesar,Karlsruhe,Germany),710mg SrN2(Cerac,Milwaukee,WI,USA),6.148g AlN(Nanoamor,Los Alamos,NM,USA),无定形7.364g SiN(Alfa Aesar)和627mg EuF3(Aldrich,Taufkirchen,Germany)合成(Ca0.95Sr0.05)0.98AlSiN3:Eu0.02。粉末在瓷研钵中混合,填充到钼坩埚中并在1450℃在合成气体气氛(forming gasatmosphere)中煅烧4小时。所得红色粉末用乙酸、水和2-丙醇洗涤以除去副产物和微粒。
所得到的粉末被压制成丸粒,在3200巴冷等静压压制并在1700℃在合成气体气氛中烧结4h。所得丸粒显示出封闭的孔隙率(closedporosity)并随后在2000巴和1700℃热等静压压制,以得到具有>98%的理论密度的致密陶瓷。
如此制造的(Ca0.95Sr0.05)0.98AlSiN3:Eu0.02被以发光转换层(638nm峰值波长,200μm(Ca0.93Sr0.05Eu0.02)AlSiN3板)的形式加入到发光器件中,该发光器件使用波长为450nm的AlInGaN作为电致发光材料。
图1示出该LED的发射光谱。色点(color point)为:x=0.615,y=0.384。
在以上具体实施方案中要素和特征的具体组合只是示例性的;还清楚地提出采用在本专利中和作为参考文献合并的专利/申请中的其它教导交换或取代这些教导。如本领域的技术人员将会认识到的那样,可以在不背离所要求保护的本发明的精神和范围的情况下,本领域技术人员可对本文中所描述内容进行改变、修正和采用其它操作。因此,以上描述仅仅是示例性的,不是作为限制。本发明的范围在下列权利要求和其等同方案中进行定义。并且,在本说明书和权利要求中所使用的参考标记并不限制本发明所要求保护的范围。

Claims (10)

1.发光器件,其具有发射初级光的光源和将至少一部分该初级光转换成二级光的光转换层,该光转换层包含对于波长范围≥580至≤1000nm中的光透射率为≥10%到≤80%的CaAlSiN光转换材料。
2.权利要求1的发光器件,其中该CaAlSiN光转换材料发射在红色可见光波长范围内的二级光,最大强度在≥590nm到≤700nm的波长处。
3.权利要求1或2的发光器件,其中该CaAlSiN光转换材料发射具有半宽为≥50nm到≤150nm的波长分布的二级光。
4.权利要求1到3任意一项的发光器件,其中该CaAlSiN光转换材料具有理论单晶密度的≥97%到≤100%的密度。
5.权利要求1到4任意一项的发光器件,其中在≥50℃到≤150℃的整个温度范围内,该CaAlSiN光转换材料在红色可见光波长范围内二级光发射中的最强处和/或半宽的偏移≤20nm。
6.权利要求1到5中任意一项的发光器件,其中该CaAlSiN光转换材料选自含有(Ca1-x-y-zSrxBayMgz)1-nAl1-a+bBaSi1-bN3-bOb:Mn的材料,其中0≤x,y,z≤1,0≤a≤1,0≤b<1,0.002≤n≤0.2,M是金属,根据本发明的实施方案M选自包含Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或它们的混合物的组。
7.权利要求1到6中任意一项的发光器件,其中该CaAlSiN光转换材料的玻璃相比例为≥2vol%到≤5vol%。
8.生产用于根据权利要求1到7中任意一项的发光器件的CaAlSiN光转换材料的方法,包含烧结步骤。
9.权利要求8所述的生产CaAlSiN光转换材料的方法,其进一步包含烧结之前将CaAlSiN前体材料压至其理论密度的≥50%到≤70%的步骤。
10.含有根据权利要求1到7中任意一项的发光器件和/或根据权利要求8到9中任意一项的方法生产的CaAlSiN光转换材料的系统,该系统在以下一种或多种应用中使用:
——办公室照明系统
——家庭应用系统
——商店照明系统
——家庭照明系统
——重点照明系统
——聚光照明系统
——剧院照明系统
——纤维光学应用系统
——投射系统
——自照明展示系统
——像素化显示系统
——分段式显示系统
——警告标记系统
——医学照明应用系统
——指示标记系统,和
——装饰照明系统
——便携系统
——汽车应用
——温室照明系统。
CN200680041470.6A 2005-11-07 2006-10-27 具有改进的CaAlSiN光转换材料的发光器件 Active CN101305072B (zh)

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CN101305072B (zh) 2016-06-29
JP2009515333A (ja) 2009-04-09
US20080290785A1 (en) 2008-11-27
EP1948757A1 (en) 2008-07-30
EP1948757B1 (en) 2017-09-20
JP5356822B2 (ja) 2013-12-04
TW200725951A (en) 2007-07-01
US8159126B2 (en) 2012-04-17
WO2007052200A1 (en) 2007-05-10

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