CN101300676A - 用于半导体芯片封装的接触焊盘的表面处理以及提供这种表面处理的方法 - Google Patents

用于半导体芯片封装的接触焊盘的表面处理以及提供这种表面处理的方法 Download PDF

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CN101300676A
CN101300676A CNA2006800406752A CN200680040675A CN101300676A CN 101300676 A CN101300676 A CN 101300676A CN A2006800406752 A CNA2006800406752 A CN A2006800406752A CN 200680040675 A CN200680040675 A CN 200680040675A CN 101300676 A CN101300676 A CN 101300676A
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conversion coating
exposed region
conductor
contact
metallization contact
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CN100555618C (zh
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保罗·戴克斯特拉
汉斯·范赖克福塞尔
罗尔夫·格罗恩休斯
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Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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Abstract

在对半导体芯片封装(10)的连接导体(32)进行掩模从而在将芯片封装(10)安装至印制线路板(50)或其它基板时防止焊料湿润时，将无机焊料掩模(48)用作表面处理。连接导体(32)被由不同金属形成的金属化触点(42)部分地覆盖。无机掩模层(46)被涂敷在未被金属化触点(42)覆盖的连接导体(32)的暴露区域(44)上。金属化触点(42)未被无机掩模层(46)覆盖。无机掩模层(46)的存在显著地降低或者防止了软焊料存在于连接导体(32)上时暴露区域(44)的湿润性，而不对金属化触点(42)上形成的固化的焊料层(48)产生影响。于是，额外的大量焊料不会在连接导体(32)的暴露区域(44)上固化。

Description

用于半导体芯片封装的接触焊盘的表面处理以及提供这种表面处理的方法
技术领域
本发明主要涉及用于半导体芯片封装的安装结构以及方法，特别地，本发明涉及用于半导体芯片封装的接触焊盘的表面处理，其中，通过利用软焊料来控制湿润的掩模层，针对金属化触点选择性地覆盖未被金属化触点覆盖的接触焊盘区域。
背景技术
载有集成电路的半导体裸片或芯片可被封装在一个芯片封装中，并随后被表面安装至诸如印制线路板(PWB)或印制电路板(PCB)之类的基板上，从而形成电子组件。通常类型的芯片封装是表面安装器件(SMD)，其包括通过焊料键合连接至印制线路板上的互补接触焊盘的接触焊盘。芯片封装被诸如拾放机之类的贴片机操纵到印制线路板上的特定位置上，并随后被焊接在印制线路板上。印制线路板不仅提供了用于安装和支撑芯片封装的物理结构，而且还提供了从接触焊盘延伸出来的导电走线图案，该图案用于将芯片封装内的半导体芯片与安装在印制线路板上的其它元件(例如，分立的无源元件)或其它半导体芯片进行电气互连。这些其它元件(它们是或近或远的封装好的或未封装的电子器件)被用于为封装在表面安装器件内部的半导体芯片提供电能、对其进行控制或者与其进行电子交流。
为了形成芯片封装，半导体芯片被安装至诸如引线框之类的载体的前侧。在半导体芯片的前侧表面上的键合焊盘和载体的前侧的键合焊盘之间建立了导电通道。建立这种导电通道的一种方法就是引线键合工艺，其中，引线从芯片键合焊盘向外延伸超越芯片的外周直至载体键合焊盘。由细丝定义的引线的另一端被键合至对应的键合焊盘。由引线限定的导电通道提供了芯片至载体的互连，于是为电源和信号分配提供了电通道。耦接的半导体裸片和载体被密封在成型材料的保护物质中。载体的后侧包括接触焊盘，其在密封之后暴露出来以形成与载体前侧的键合焊盘电耦接的封装。
通过焊接工艺将芯片封装的接触焊盘上的金属化触点附着在印制线路板的互补接触焊盘上，该焊接工艺通常由波峰焊接、红外(IR)回流焊接、对流式红外回流焊接、或者气相回流焊接实现。虽然这些方案彼此不同，但是由于半导体芯片是通过金属的或金属间键合连接至印制线路板上的，所以最后的结果基本上是一样的。在所有的电子元件都安装至印制线路板上之后，印制线路板和元件的结合组成了电子组件，而电子组件又是所有更大规模的电子系统的基本构建块。
焊接工艺的一个困难在于，接触焊盘可能仅仅被金属化触点部分地覆盖，该金属化触点用于与印制线路板上的对应的接触焊盘进行电连接。接触焊盘的未覆盖部分在焊接期间被软焊料频繁地湿润。典型地，接触焊盘由诸如铜或镍之类的一种金属制成，并且金属化触点是由诸如金或者钯-金之类的不同金属制成的。在组装期间和使用前的后组装存储期间，镀在镍上部的金或者钯-金作为防止氧化的屏障。此外，金或者钯-金提供了更适合于焊料附着的表面，这提高了焊接工艺的产量。然而，当焊接工艺被执行时，软焊料可流动至金属化触点边缘的外部，并且使接触焊盘的邻近的暴露金属湿润。当软焊料凝固时，大量固体焊料处于金属化触点的周界外部的接触焊盘上的不希望的位置，这可能导致电短路或者造成其它缺陷。
可将有机掩模物质涂敷在金属化触点外部的接触焊盘的暴露金属上。这些有机掩模物质用于防止软焊料湿润下面的有掩模的金属。不考虑掩模所提供的优点，那么有机掩模物质是很昂贵的，并且不能精确地涂敷以确保金属化触点的周界外部的接触焊盘的所有暴露金属都被覆盖。
发明内容
因此，需要一种方法，它能选择地对与金属化触点邻近的接触焊盘的区域进行掩模，从而防止其被软焊料湿润，该方法克服了传统掩模方法依赖有机掩模物质的缺点。
在本发明的一个实施例中，一种安装结构包括载体，该载体包括连接导体，该连接导体具有载有由第一导体组成的金属化触点的接触焊盘和邻近所述金属化触点的由第二导体组成的暴露区域。无机掩模层被涂敷在暴露区域上。该无机掩模层通过软焊料显著地降低了所述暴露区域的湿润性，该软焊料在固化时会在所述金属化触点上形成焊料层。该安装结构可用于电子组件，该电子组件进一步包括与半导体裸片电耦接的载体和具有接触焊盘的基板，该接触焊盘通过焊料层与载体的接触焊盘的金属化触点进行耦接。
在本发明的另一个方面中，一种用于将芯片封装附着在基板上的方法包括：利用金属化触点来部分地覆盖所述芯片封装的连接导体；利用无机掩模层对所述金属化触点附近的连接导体的暴露区域进行掩模；并且在金属化触点上提供软焊料。该附着方法还包括：利用所述无机掩模层来防止焊料湿润所述连接导体的所述暴露区域；同时允许所述软焊料进行固化，从而在所述金属化触点上形成焊料层，该焊料层用于建立所述金属化触点和所述基板上的接触焊盘之间的电连接。
在本发明的另一个方面中，提供了一种用于处理连接导体的方法，该连接导体被金属化触点部分地覆盖，并且该连接导体被装载在对半导体芯片进行支撑的载体上。该方法包括：利用无机掩模层对所述金属化触点附近的所述连接导体的暴露区域进行掩模，该无机掩模层能有效地防止焊料湿润所述暴露区域。
附图说明
并入本说明书并作为其一部分的附图图示说明了本发明的实施例，并且，附图与本发明的上述总体描述以及下文中实施例的详细描述一起对本发明的原理进行说明。
图1是在载体被分割成单独的芯片封装之前，被安装以形成芯片封装的载体和半导体芯片的示意截面图。
图2是图1的芯片封装中的一个的放大的示意截面侧视图，图1的芯片封装被安装至印制线路板以形成电子组件。
图3是根据本发明的原理，在对未被金属化触点覆盖的接触焊盘部分采取表面处理之前，图1中大致沿着线3-3得到的示意仰视图。
图4是类似于图3的示意仰视图，其中已经选择性地实施了表面处理。
图5是图2的接触焊盘的示意仰视图，其具有涂敷在金属化触点上的焊料层。
图6是根据本发明替换实施例，在载体被分割成单独的芯片封装之前，被安装以形成芯片封装的载体和半导体芯片的示意截面视图，。
图6A是根据本发明的原理，在采取表面处理以限制焊料湿润之后，图6中大致沿着线6A-6A获取的示意仰视图。
具体实施方式
本发明提供了用于提供无机焊料掩模的方法，该无机焊料掩模对半导体芯片的接触焊盘的暴露部分进行覆盖，在空间上该暴露部分接近由不同导体或金属制成的金属化触点。通过参考伴随本申请文件的附图，现在将对本发明进行更加详细的描述。
参见图1，半导体芯片封装10包括具有堆叠或者多个有图形的金属层11、12、13的载体30和半导体裸片或芯片。金属层11、12、13被分成多个相互隔离的连接导体31、32、33，它们具有被孔15彼此隔离的侧部边缘。层11、13可包括类似铜(Cu)或铜合金的导体，并且层12可包括类似镍、钼或钛的导体。
半导体芯片20包括连接区域21形式的键合焊盘。半导体芯片20通过导电粘合剂层23附着在连接导体32上，连接导体32包括裸片附着或键合焊盘14。导电粘合剂层23提供半导体芯片20的后部和连接导体32之间的直接电连接。每个连接区域21均通过多个键合引线22中的一个键合引线与对应的一个连接导体31、33上的键合焊盘14进行电耦接。键合引线22可由任何合适的易延展金属形成，例如该金属可从金、铜、铝、以及这些金属的合金中选出。半导体芯片20的前侧以及键合引线22被通过成型技术涂敷的大量固化的模塑料40(例如环氧模塑料或密封剂)密封。虽然仅仅示出了单个半导体芯片20，但是本领域技术人员可以理解的是，载体30上附着有多个半导体芯片，每个均与半导体芯片20类似。例如，通过锯切技术大致沿着虚线60将半导体芯片20中的每个以及载体30的相关键合部分分割出来，从而形成多个独立的封装10(图2)。
连接导体31、32、33中的每一个均具有在封装10的一侧暴露的接触焊盘17，它用于建立封装10内的半导体芯片20所载有的集成电路与外部电路之间的电连接。接触焊盘17可由金属(例如镍)的中间涂层组成，其被涂在连接导体31、32、33中的一个对应的连接导体的暴露金属上。连接导体32接地，并且作为半导体裸片20的散热器。
至少连接导体32上的接触焊盘17被触点表面或金属化触点42部分地覆盖(图3)，该金属化触点42是由导电材料制成的相对薄的粘合层组成的。组成金属化触点42的导体最好是诸如金或钯金之类的贵金属，其在组装期间和使用前的后组装存储期间作为防止氧化的屏障，并且还为焊料湿润和附着提供了更好的表面，从而提高了可焊性。
与封装10和载体30类似的封装和载体还在共同转让的美国专利申请第10/510,591号和第10/510,558号中有所描述，这两个专利申请均通过引用而完全并入本文。然而，本发明并不限于此，本发明的原理还适用于其它封装和载体设计中。
参见图2，在分割之后，封装10被安装至诸如印制线路板50之类的基板上。印制线路板50包括多个接触焊盘，其中接触焊盘52被示出，它们被用于建立与印制线路板50所载有的导电走线的电连接。在至少连接导体32上的接触焊盘17上的金属化触点42(图3)和印制线路板50上对应的接触焊盘52之间形成焊料层48。组成焊料层48的材料可以是能够冶金化地与其它金属键合在一起的任何可回流金属或合金，并且对金属化触点42的组成金属的呈现出良好的湿润特性。合适的可回流材料包括但不限于锡及锡合金，还包括诸如铜、铟、银、铋、或铅之类的金属。焊料层48可源自焊膏，焊膏包括涂敷在接触焊盘52上的助焊剂和锡或锡合金的混合物。固化的焊料层48在接触焊盘17的金属化触点42(图3)和印制线路板50上对应的接触焊盘52之间提供机械或电接触。
参见图3，其中相同的标号表示与图1中类似的特征，例如，连接导体32的层12的表面或区域44邻近连接导体32的接触焊盘17上的金属化触点42是暴露的。层12的暴露区域44相对于接触焊盘17是凹进去的，所以它和接触焊盘处于不同的水平平面上，其中“垂直”指的是与金属化触点42的暴露表面大体垂直，“水平”指的是与金属化触点42的暴露表面基本平行。暴露区域44包括层12的导体(例如，镍、钼或钛)，其在组成上不同于组成邻近暴露区域44的金属化触点42的金属。金属化触点42的周边45表现为接触焊盘17，并且覆盖了接触焊盘17，接触焊盘17具有与触点42类似的表面面积。
参见图4和5，其中相同的标号表示与图1至3中类似的特征，在涂敷焊料层48之前，与接触焊盘17相邻的层12的暴露区域44被无机掩模材料组成的掩模薄膜或层46覆盖。当暴露至软焊料时，掩模层46有效地显著降低或防止暴露区域44的湿润。然而，软焊料很容易地就使得金属化触点42变得湿润。由于软焊料不能使得暴露区域44的裸金属或模塑料40变得湿润，所以软焊料基本上被限制在金属化触点42外周45内。于是，固化的焊料层48占据了金属化触点42。在冷却之后，固化的焊料层48将具有轮廓分布或几何形状，除了其它变量之外，该轮廓分布或几何形状取决于焊料量、回流时间-温度分布、和表面张力的强度。焊料层48在半导体芯片20和载体30之间提供机械和电连接。
掩模层46可由能有效地使软焊料具有不可湿润性的任何无机物质组成。特别地，掩模层46可以是含铬的转化涂层，例如铬酸盐转化涂层，或者诸如钼酸盐、亚硫酸盐/草酸盐、或过硫酸盐转化涂层之类的无铬转化涂层。掩模层46通过软焊料显著地减低了或者有利地防止了掩模的暴露区域44的湿润。组成暴露区域44的金属参与掩模层46的形成，掩模层46取代了暴露区域44上的任何其它表面层(例如本征氧化层)。掩模层46不仅仅是附加的覆盖层，而与源自暴露区域44的金属相结合。
典型地，通过清洁金属表面、冲洗、创建转化涂层(这是通过使暴露区域44的金属暴露至适当的溶液或与其接触来实现的)、冲洗去除多余的溶液，并且干燥，从而将掩模层46涂敷在每个接触焊盘17上的暴露区域44上。例如，转化涂层可通过将封装10浸入或浸泡在水溶液的槽中形成，该水溶液包含六价铬(Cr+6)或三价铬(Cr+3)离子源、酸(例如硫磺酸或硝酸)、和一种或多种催化剂阴离子源(通常从醋酸盐、甲酸盐、硫酸盐、氯化物、氟化物、硝酸盐、磷酸盐和氨基磺酸盐离子所组成的组中进行选择)。铬离子可由诸如氧化铬(CrO3)之类的任何适合的可溶解化合物源提供。可选地，槽可被加热至环境温度或室温以上，从而促进有效的涂层。根据所要求产生的希望涂层，浸没时间可在5秒至几分钟之间。除了其它因素之外，转化涂层的厚度取决于组成封装10和其它邻近的封装10所浸入的槽中的溶液的化合物或化学物质。溶液中的金属铬离子与层12的基底金属反应，从而生长出铬酸盐转化薄膜，铬酸盐转化薄膜构成了掩模层46。虽然并不希望被理论所限制，但是可以确信的是，槽中发生的化学反应生长出了包含各种水合氧化铬(通常铬处于高氧化态)的铬酸盐转化涂层。
可以以类似的成批方式，通过将槽中的溶液替换成具有不同化学物质的溶液来提供钼酸盐、亚硫酸盐/草酸盐、或过硫酸盐转化涂层。还可以通过本领域技术人员所了解的其它技术(例如喷、刷、或擦)来涂敷该溶液。
当封装10浸入其中时，尽管被槽中的水溶液湿润，但是金属化触点42的金属不会由于暴露给槽中的水溶液而受到影响。构成金属化触点42的金属对槽中的化学物质呈现化学惰性，因此不会与这些化学物质起化学反应。模塑料40也同样不受槽中的水溶液的湿润的影响。于是，掩模层46仅在自对准工艺中涂敷至暴露区域44，自对准工艺固有地并系统地排除了金属化触点42和模塑料40。这表现出明显地高于有机涂层的优势，有机涂层是不能以这种方式涂敷的。在使用前，没有必要将掩模层46从暴露区域44剥离或者去除。
参见图6和6A，其中相同的标号表示与图1至5中类似的特征，根据本发明的替换实施例，封装10’可被处理为暴露区域44包括层11的导体(例如铜或铜合金)，其在组成上不同于构成与区域44邻近并暴露的金属化触点42的金属。在该示例中，仅仅在连接导体32的层11的暴露区域44上涂敷了掩模层46。
虽然采用了各种实施例的描述对本发明进行了说明，并且这些实施例是以相当详细的方式进行说明的，但是申请人的目的并不在于限制或者以任何方式将所附权利要求的范围限制在该描述范围内。对于本领域技术人员而言，其它优点或修改是显而易见的。因此，更宽的范围的本发明并不限于所示和所描述的特定细节、代表性设备和方法、和示意性示例。于是，可以在不脱离本申请人的总体发明思想的情况下对这些细节进行修改。

Claims (19)

1.一种安装结构，其包括：载体(30)，该载体包括连接导体(32)，该连接导体(32)具有载有由第一导体组成的金属化触点(42)的接触焊盘(17)和邻近所述金属化触点(42)的由第二导体组成的暴露区域(44)；和无机掩模层(46)，该无机掩模层(46)处于所述连接导体(32)的所述暴露区域(44)上，所述无机掩模层(46)通过软焊料显著地降低了所述暴露区域(44)的湿润性，该软焊料在固化时会在所述金属化触点(42)上形成焊料层(48)。
2.如权利要求1所述的安装结构，其中所述第一导体包括金属，所述无机掩模层(46)包括转化涂层。
3.如权利要求2所述的安装结构，其中所述转化涂层是从铬酸盐转化涂层、钼酸盐转化涂层、亚硫酸盐/草酸盐转化涂层、和过硫酸盐转化涂层所组成的组中选择出来的。
4.如权利要求1所述的安装结构，其中所述第一导体包括镍、铜、钼、或钛，所述第二导体包括金或钯金。
5.如权利要求1所述的安装结构，其中所述金属化触点(42)具有外周(45)，并且所述安装结构还包括：覆盖所述金属化触点(42)的焊料层(48)，所述焊料层(48)基本上被限制在所述金属化触点(42)的所述外周(45)内。
6.一种电子组件，其包括：半导体裸片(20)；与所述半导体裸片(20)电耦接的载体(30)，所述载体(30)包括具有连接导体(32)的载体(30)，该连接导体(32)具有载有由第一导体组成的金属化触点(42)的接触焊盘(17)和邻近所述金属化触点(42)的由第二导体组成的暴露区域(44)；具有接触焊盘(52)的基板(50)；焊料层(48)，其将所述金属化触点(42)与所述基板(50)的所述接触焊盘(52)电耦接；和无机掩模层(46)，该无机掩模层处于所述连接导体(32)的所述暴露区域(44)上，所述无机掩模层(46)通过软焊料显著地降低了所述暴露区域(44)的湿润性，该软焊料在固化时形成所述焊料层(48)。
7.如权利要求6所述的电子组件，其中所述第一导体包括金属，所述无机掩模层(46)包括转化涂层。
8.如权利要求7所述的电子组件，其中所述转化涂层是从铬酸盐转化涂层、钼酸盐转化涂层、亚硫酸盐/草酸盐转化涂层、和过硫酸盐转化涂层所组成的组中选择出来的。
9.如权利要求6所述的电子组件，其中所述第一导体包括镍、铜、钼、或钛，所述第二导体包括金。
10.如权利要求6所述的电子组件，其中所述金属化触点(42)具有外周(45)，并且所述焊料层基本上被限制在所述金属化触点(42)的所述外周(45)内。
11.如权利要求6所述的电子组件，其中所述基板(50)包括印制线路板。
12.一种用于将芯片封装(10)附着在基板(50)上的方法，其包括：利用金属化触点(42)来部分地覆盖所述芯片封装(10)的连接导体(32)；利用无机掩模层(46)对所述金属化触点(42)附近的所述连接导体(32)的暴露区域(44)进行掩模；在所述金属化触点(42)上提供软焊料；利用所述无机掩模层(46)来防止焊料湿润所述连接导体(32)的所述暴露区域(44)；并且允许所述软焊料进行固化，从而在所述金属化触点(42)上形成焊料层(48)，该焊料层用于建立所述金属化触点(42)和所述基板(50)上的接触焊盘(52)之间的电连接。
13.如权利要求12所述的方法，其中所述无机掩模层(46)进一步包括转化涂层，并且对所述暴露区域(44)进行掩模的操作还包括：在所述芯片封装(10)的所述连接导体(32)的所述暴露区域(44)上形成转化涂层。
14.如权利要求12所述的方法，其中所述转化涂层是从铬酸盐转化涂层、钼酸盐转化涂层、亚硫酸盐/草酸盐转化涂层、和过硫酸盐转化涂层所组成的组中选择出来的。
15.如权利要求12所述的方法，其中所述连接导体(32)的所述暴露区域(44)包括镍、铜、钼、或钛，并且所述金属化触点(42)包括涂敷在所述连接导体(32)的所述暴露区域(44)上的金或钯金。
16.一种用于处理连接导体(32)的方法，该连接导体(32)被金属化触点(42)部分地覆盖，并且该连接导体(32)被装载支撑半导体芯片(20)的载体(30)上，所述方法包括：利用无机掩模层(46)对所述金属化触点(42)附近的所述连接导体(32)的暴露区域(44)进行掩模，该无机掩模层能有效地防止焊料湿润所述暴露区域(44)。
17.如权利要求16所述的方法，其中所述无机掩模层(46)进一步包括转化涂层，并且对所述暴露区域(44)进行掩模的操作还包括：在所述暴露区域(44)上形成转化涂层。
18.如权利要求17所述的方法，其中所述转化涂层是从铬酸盐转化涂层、钼酸盐转化涂层、亚硫酸盐/草酸盐转化涂层、和过硫酸盐转化涂层所组成的组中选择出来的。
19.如权利要求16所述的方法，其中所述连接导体(32)的所述暴露区域(44)包括镍、铜、钼、或钛，并且所述金属化触点(42)包括涂敷在所述连接导体(32)的所述暴露区域(44)上的金或钯金。
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