CN101297063B - 处理气体的方法 - Google Patents
处理气体的方法 Download PDFInfo
- Publication number
- CN101297063B CN101297063B CN2006800401532A CN200680040153A CN101297063B CN 101297063 B CN101297063 B CN 101297063B CN 2006800401532 A CN2006800401532 A CN 2006800401532A CN 200680040153 A CN200680040153 A CN 200680040153A CN 101297063 B CN101297063 B CN 101297063B
- Authority
- CN
- China
- Prior art keywords
- gas
- sweeping
- pump
- processing chamber
- discharging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 78
- 239000000203 mixture Substances 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 claims abstract description 26
- 230000004044 response Effects 0.000 claims abstract description 9
- 238000010408 sweeping Methods 0.000 claims description 107
- 238000007599 discharging Methods 0.000 claims description 71
- 239000000463 material Substances 0.000 claims description 23
- 238000003754 machining Methods 0.000 claims description 15
- 229910052731 fluorine Inorganic materials 0.000 claims description 14
- 239000011737 fluorine Substances 0.000 claims description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 13
- 230000008030 elimination Effects 0.000 claims description 7
- 238000003379 elimination reaction Methods 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000005457 optimization Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 213
- 238000010926 purge Methods 0.000 abstract description 14
- 238000005086 pumping Methods 0.000 abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 12
- 238000009833 condensation Methods 0.000 description 7
- 230000005494 condensation Effects 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 6
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 239000005431 greenhouse gas Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 206010037544 Purging Diseases 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/204—Inorganic halogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/206—Organic halogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2259/00—Type of treatment
- B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
- B01D2259/818—Employing electrical discharges or the generation of a plasma
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Treating Waste Gases (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0521944.9 | 2005-10-27 | ||
| GBGB0521944.9A GB0521944D0 (en) | 2005-10-27 | 2005-10-27 | Method of treating gas |
| PCT/GB2006/003597 WO2007048995A1 (en) | 2005-10-27 | 2006-09-28 | Method of treating gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101297063A CN101297063A (zh) | 2008-10-29 |
| CN101297063B true CN101297063B (zh) | 2012-07-04 |
Family
ID=35515848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006800401532A Expired - Fee Related CN101297063B (zh) | 2005-10-27 | 2006-09-28 | 处理气体的方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8480861B2 (enExample) |
| EP (1) | EP1941073B1 (enExample) |
| JP (1) | JP2009513330A (enExample) |
| KR (1) | KR20080060254A (enExample) |
| CN (1) | CN101297063B (enExample) |
| GB (1) | GB0521944D0 (enExample) |
| TW (1) | TW200719945A (enExample) |
| WO (1) | WO2007048995A1 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080104372A (ko) * | 2006-03-16 | 2008-12-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 전자 장치 제조 시스템의 압력 제어 방법 및 장치 |
| FR2932059A1 (fr) * | 2008-05-28 | 2009-12-04 | Air Liquide | Systeme de traitement par plasma d'un fluide ou melange de fluides |
| KR20110028396A (ko) * | 2008-07-11 | 2011-03-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 전자 수단 제조 공정 배출물을 저감시키기 위한 방법 및 기구 |
| JP2011163150A (ja) * | 2010-02-05 | 2011-08-25 | Toyota Industries Corp | 水素ガスの排気方法及び真空ポンプ装置 |
| JP5837351B2 (ja) * | 2010-08-05 | 2015-12-24 | 株式会社荏原製作所 | 排気系システム |
| KR101230513B1 (ko) * | 2010-12-27 | 2013-02-06 | (주)엘오티베큠 | 배기 유체 처리 장치 |
| JP5877702B2 (ja) * | 2011-12-14 | 2016-03-08 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
| GB2501735B (en) * | 2012-05-02 | 2015-07-22 | Edwards Ltd | Method and apparatus for warming up a vacuum pump arrangement |
| KR20140107758A (ko) | 2013-02-28 | 2014-09-05 | 삼성전자주식회사 | 반응 부산물 처리기 및 반응 부산물의 처리방법과 반응 부산물 처리기를 구비하는 반도체 소자 제조설비 |
| CN105209156B (zh) | 2013-03-14 | 2017-05-10 | Mks仪器股份有限公司 | 环形等离子体减少设备和方法 |
| JP6153754B2 (ja) * | 2013-03-28 | 2017-06-28 | 株式会社荏原製作所 | 除害機能付真空ポンプ |
| JP6151945B2 (ja) * | 2013-03-28 | 2017-06-21 | 株式会社荏原製作所 | 除害機能付真空ポンプ |
| GB2513300B (en) * | 2013-04-04 | 2017-10-11 | Edwards Ltd | Vacuum pumping and abatement system |
| JP6368458B2 (ja) * | 2013-05-24 | 2018-08-01 | 株式会社荏原製作所 | 除害機能付真空ポンプ |
| JP6166102B2 (ja) * | 2013-05-30 | 2017-07-19 | 株式会社荏原製作所 | 除害機能付真空ポンプ |
| GB2515017B (en) * | 2013-06-10 | 2017-09-20 | Edwards Ltd | Process gas abatement |
| US20150211114A1 (en) * | 2014-01-30 | 2015-07-30 | Applied Materials, Inc. | Bottom pump and purge and bottom ozone clean hardware to reduce fall-on particle defects |
| JP5808454B1 (ja) | 2014-04-25 | 2015-11-10 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体 |
| KR20230051311A (ko) | 2014-09-12 | 2023-04-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 프로세싱 장비 유출물의 처리를 위한 제어기 |
| CN104480468A (zh) * | 2014-12-31 | 2015-04-01 | 深圳市华星光电技术有限公司 | 干式蚀刻机及用于捕集气体中磁性颗粒的捕集装置 |
| GB2535703B (en) * | 2015-02-23 | 2019-09-18 | Edwards Ltd | Gas supply apparatus |
| JP6749090B2 (ja) * | 2015-11-12 | 2020-09-02 | 東京エレクトロン株式会社 | ハロゲン系ガスを用いる処理装置における処理方法 |
| US20190282948A1 (en) * | 2016-01-27 | 2019-09-19 | Imad Mahawili | Semiconductor processing system |
| JP7472114B2 (ja) * | 2018-09-28 | 2024-04-22 | ラム リサーチ コーポレーション | 堆積副生成物の蓄積からの真空ポンプの保護 |
| WO2020172179A1 (en) * | 2019-02-22 | 2020-08-27 | Applied Materials, Inc. | Reduction of br2 and cl2 in semiconductor processes |
| CN109821657B (zh) * | 2019-03-12 | 2024-03-22 | 华南理工大学 | 燃煤电厂电除尘器绝缘子室的吹扫装置 |
| US11786858B2 (en) | 2019-06-06 | 2023-10-17 | Edwards Vacuum Llc | Liquid filter apparatus for gas/solid separation for semiconductor processes |
| WO2021053972A1 (ja) * | 2019-09-19 | 2021-03-25 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法、プログラム、記録媒体および排ガス処理システム |
| GB2588906A (en) * | 2019-11-13 | 2021-05-19 | Edwards Ltd | Gas purged valve |
| JP7361640B2 (ja) * | 2020-03-09 | 2023-10-16 | エドワーズ株式会社 | 真空ポンプ |
| US20210402351A1 (en) * | 2020-06-26 | 2021-12-30 | Zimmer, Inc. | Vacuum generation process for deposition of biomedical implant materials |
| US11931682B2 (en) | 2020-09-22 | 2024-03-19 | Edwards Vacuum Llc | Waste gas abatement technology for semiconductor processing |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6423284B1 (en) * | 1999-10-18 | 2002-07-23 | Advanced Technology Materials, Inc. | Fluorine abatement using steam injection in oxidation treatment of semiconductor manufacturing effluent gases |
| EP1371750A1 (en) * | 2002-06-10 | 2003-12-17 | The Boc Group, Inc. | Method of recycling fluorine using an adsorption purification process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5453125A (en) * | 1994-02-17 | 1995-09-26 | Krogh; Ole D. | ECR plasma source for gas abatement |
| IE80909B1 (en) * | 1996-06-14 | 1999-06-16 | Air Liquide | An improved process and system for separation and recovery of perfluorocompound gases |
| US6153260A (en) * | 1997-04-11 | 2000-11-28 | Applied Materials, Inc. | Method for heating exhaust gas in a substrate reactor |
| JP3050195B2 (ja) * | 1997-12-09 | 2000-06-12 | 日本電気株式会社 | Ｃｖｄ装置の排気ガス処理方法及び装置 |
| US6689252B1 (en) * | 1999-07-28 | 2004-02-10 | Applied Materials, Inc. | Abatement of hazardous gases in effluent |
| US6468490B1 (en) * | 2000-06-29 | 2002-10-22 | Applied Materials, Inc. | Abatement of fluorine gas from effluent |
| JP2001252527A (ja) | 2000-03-13 | 2001-09-18 | Seiko Epson Corp | Ｐｆｃの処理方法および処理装置 |
| US6592817B1 (en) * | 2000-03-31 | 2003-07-15 | Applied Materials, Inc. | Monitoring an effluent from a chamber |
| US7378062B2 (en) | 2000-05-29 | 2008-05-27 | Three Tec Co., Ltd. | Object processing apparatus and plasma facility comprising the same |
| US6514471B1 (en) | 2000-10-31 | 2003-02-04 | Air Products And Chemicals, Inc. | Removing fluorine from semiconductor processing exhaust gas |
| JP2004223365A (ja) | 2003-01-21 | 2004-08-12 | Rohm Co Ltd | ガス処理装置 |
| GB0412623D0 (en) * | 2004-06-07 | 2004-07-07 | Boc Group Plc | Method controlling operation of a semiconductor processing system |
| US7368000B2 (en) | 2004-12-22 | 2008-05-06 | The Boc Group Plc | Treatment of effluent gases |
| GB0509163D0 (en) | 2005-05-05 | 2005-06-15 | Boc Group Plc | Gas combustion apparatus |
| JP2006332339A (ja) * | 2005-05-26 | 2006-12-07 | Sharp Corp | 真空装置及び除害システム |
-
2005
- 2005-10-27 GB GBGB0521944.9A patent/GB0521944D0/en not_active Ceased
-
2006
- 2006-09-28 EP EP06779560.9A patent/EP1941073B1/en not_active Not-in-force
- 2006-09-28 CN CN2006800401532A patent/CN101297063B/zh not_active Expired - Fee Related
- 2006-09-28 JP JP2008537169A patent/JP2009513330A/ja active Pending
- 2006-09-28 WO PCT/GB2006/003597 patent/WO2007048995A1/en not_active Ceased
- 2006-09-28 KR KR1020087009791A patent/KR20080060254A/ko not_active Ceased
- 2006-09-28 US US12/084,361 patent/US8480861B2/en not_active Expired - Fee Related
- 2006-10-14 TW TW095137850A patent/TW200719945A/zh unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6423284B1 (en) * | 1999-10-18 | 2002-07-23 | Advanced Technology Materials, Inc. | Fluorine abatement using steam injection in oxidation treatment of semiconductor manufacturing effluent gases |
| EP1371750A1 (en) * | 2002-06-10 | 2003-12-17 | The Boc Group, Inc. | Method of recycling fluorine using an adsorption purification process |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0521944D0 (en) | 2005-12-07 |
| WO2007048995A1 (en) | 2007-05-03 |
| US20100071548A1 (en) | 2010-03-25 |
| CN101297063A (zh) | 2008-10-29 |
| JP2009513330A (ja) | 2009-04-02 |
| EP1941073A1 (en) | 2008-07-09 |
| EP1941073B1 (en) | 2013-04-17 |
| TW200719945A (en) | 2007-06-01 |
| US8480861B2 (en) | 2013-07-09 |
| KR20080060254A (ko) | 2008-07-01 |
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