CN101292197A - 具有减小的线条边缘粗糙度的蚀刻特征 - Google Patents

具有减小的线条边缘粗糙度的蚀刻特征 Download PDF

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Publication number
CN101292197A
CN101292197A CNA2006800386231A CN200680038623A CN101292197A CN 101292197 A CN101292197 A CN 101292197A CN A2006800386231 A CNA2006800386231 A CN A2006800386231A CN 200680038623 A CN200680038623 A CN 200680038623A CN 101292197 A CN101292197 A CN 101292197A
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China
Prior art keywords
layer
photoresist
depositing
sidewall
features
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Pending
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CNA2006800386231A
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English (en)
Chinese (zh)
Inventor
S·M·列扎·萨贾迪
埃里克·A·赫德森
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Lam Research Corp
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Lam Research Corp
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Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN101292197A publication Critical patent/CN101292197A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNA2006800386231A 2005-08-18 2006-08-01 具有减小的线条边缘粗糙度的蚀刻特征 Pending CN101292197A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/208,098 2005-08-18
US11/208,098 US7273815B2 (en) 2005-08-18 2005-08-18 Etch features with reduced line edge roughness

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2013100206245A Division CN103105744A (zh) 2005-08-18 2006-08-01 具有减小的线条边缘粗糙度的蚀刻特征

Publications (1)

Publication Number Publication Date
CN101292197A true CN101292197A (zh) 2008-10-22

Family

ID=37758048

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2013100206245A Pending CN103105744A (zh) 2005-08-18 2006-08-01 具有减小的线条边缘粗糙度的蚀刻特征
CNA2006800386231A Pending CN101292197A (zh) 2005-08-18 2006-08-01 具有减小的线条边缘粗糙度的蚀刻特征

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN2013100206245A Pending CN103105744A (zh) 2005-08-18 2006-08-01 具有减小的线条边缘粗糙度的蚀刻特征

Country Status (6)

Country Link
US (2) US7273815B2 (enExample)
JP (2) JP5250418B2 (enExample)
KR (1) KR101257532B1 (enExample)
CN (2) CN103105744A (enExample)
TW (1) TWI432605B (enExample)
WO (1) WO2007021540A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103871956A (zh) * 2012-12-10 2014-06-18 中微半导体设备(上海)有限公司 一种深孔硅刻蚀方法
CN104465386A (zh) * 2013-09-24 2015-03-25 中芯国际集成电路制造(北京)有限公司 半导体结构的形成方法
CN105719965A (zh) * 2014-12-04 2016-06-29 北京北方微电子基地设备工艺研究中心有限责任公司 二氧化硅基片的刻蚀方法和刻蚀设备
CN107527797A (zh) * 2017-08-16 2017-12-29 江苏鲁汶仪器有限公司 一种改善光刻胶线条边缘粗糙度的方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103871956A (zh) * 2012-12-10 2014-06-18 中微半导体设备(上海)有限公司 一种深孔硅刻蚀方法
CN104465386A (zh) * 2013-09-24 2015-03-25 中芯国际集成电路制造(北京)有限公司 半导体结构的形成方法
CN105719965A (zh) * 2014-12-04 2016-06-29 北京北方微电子基地设备工艺研究中心有限责任公司 二氧化硅基片的刻蚀方法和刻蚀设备
CN107527797A (zh) * 2017-08-16 2017-12-29 江苏鲁汶仪器有限公司 一种改善光刻胶线条边缘粗糙度的方法
CN107527797B (zh) * 2017-08-16 2022-04-05 江苏鲁汶仪器有限公司 一种改善光刻胶线条边缘粗糙度的方法

Also Published As

Publication number Publication date
TWI432605B (zh) 2014-04-01
WO2007021540A2 (en) 2007-02-22
US20070284690A1 (en) 2007-12-13
KR101257532B1 (ko) 2013-04-23
JP2013110437A (ja) 2013-06-06
US7273815B2 (en) 2007-09-25
US20070042607A1 (en) 2007-02-22
KR20080046665A (ko) 2008-05-27
CN103105744A (zh) 2013-05-15
JP2009505421A (ja) 2009-02-05
TW200720482A (en) 2007-06-01
WO2007021540A3 (en) 2007-12-21
JP5250418B2 (ja) 2013-07-31

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Application publication date: 20081022