CN101268543A - 用于更低的米勒电容和改善的驱动电流的单个栅极上的多个低和高介电常数栅级氧化物 - Google Patents

用于更低的米勒电容和改善的驱动电流的单个栅极上的多个低和高介电常数栅级氧化物 Download PDF

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Publication number
CN101268543A
CN101268543A CNA2006800342746A CN200680034274A CN101268543A CN 101268543 A CN101268543 A CN 101268543A CN A2006800342746 A CNA2006800342746 A CN A2006800342746A CN 200680034274 A CN200680034274 A CN 200680034274A CN 101268543 A CN101268543 A CN 101268543A
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China
Prior art keywords
oxide
gate
containing material
gate oxide
low
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Pending
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CNA2006800342746A
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English (en)
Chinese (zh)
Inventor
达雷塞蒂·奇达姆巴拉奥
奥默·多库马西
奥莱格·格鲁申科夫
迈克尔·贝利安斯基
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International Business Machines Corp
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International Business Machines Corp
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Publication of CN101268543A publication Critical patent/CN101268543A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/018—Spacers formed inside holes at the prospective gate locations, e.g. holes left by removing dummy gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/683—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being parallel to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CNA2006800342746A 2005-09-22 2006-09-22 用于更低的米勒电容和改善的驱动电流的单个栅极上的多个低和高介电常数栅级氧化物 Pending CN101268543A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/162,778 2005-09-22
US11/162,778 US20070063277A1 (en) 2005-09-22 2005-09-22 Multiple low and high k gate oxides on single gate for lower miller capacitance and improved drive current

Publications (1)

Publication Number Publication Date
CN101268543A true CN101268543A (zh) 2008-09-17

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Family Applications (1)

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CNA2006800342746A Pending CN101268543A (zh) 2005-09-22 2006-09-22 用于更低的米勒电容和改善的驱动电流的单个栅极上的多个低和高介电常数栅级氧化物

Country Status (7)

Country Link
US (1) US20070063277A1 (enExample)
EP (1) EP1927128A4 (enExample)
JP (1) JP2009509359A (enExample)
KR (1) KR20080058341A (enExample)
CN (1) CN101268543A (enExample)
TW (1) TW200713456A (enExample)
WO (1) WO2007038237A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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CN102024743A (zh) * 2009-09-18 2011-04-20 格罗方德半导体公司 半导体结构与在鳍状装置之鳍状结构之间形成隔离的方法
CN102446729A (zh) * 2010-10-08 2012-05-09 格罗方德半导体公司 用湿式化学方法形成受控底切而有优异完整性的高介电系数栅极堆栈

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Publication number Priority date Publication date Assignee Title
CN102024743A (zh) * 2009-09-18 2011-04-20 格罗方德半导体公司 半导体结构与在鳍状装置之鳍状结构之间形成隔离的方法
CN105428304A (zh) * 2009-09-18 2016-03-23 格罗方德半导体公司 半导体结构与在鳍状装置之鳍状结构之间形成隔离的方法
CN102446729A (zh) * 2010-10-08 2012-05-09 格罗方德半导体公司 用湿式化学方法形成受控底切而有优异完整性的高介电系数栅极堆栈

Also Published As

Publication number Publication date
EP1927128A2 (en) 2008-06-04
KR20080058341A (ko) 2008-06-25
EP1927128A4 (en) 2009-01-28
JP2009509359A (ja) 2009-03-05
US20070063277A1 (en) 2007-03-22
WO2007038237A3 (en) 2007-07-26
WO2007038237A2 (en) 2007-04-05
TW200713456A (en) 2007-04-01

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