CN101248340B - 压力传感器及其制造方法 - Google Patents

压力传感器及其制造方法 Download PDF

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Publication number
CN101248340B
CN101248340B CN2006800310976A CN200680031097A CN101248340B CN 101248340 B CN101248340 B CN 101248340B CN 2006800310976 A CN2006800310976 A CN 2006800310976A CN 200680031097 A CN200680031097 A CN 200680031097A CN 101248340 B CN101248340 B CN 101248340B
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China
Prior art keywords
pressure sensor
cavity
substrate
lower substrate
silicon
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Expired - Fee Related
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CN2006800310976A
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English (en)
Chinese (zh)
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CN101248340A (zh
Inventor
斯坦利·丘
西西拉·K·加梅奇
权贤镇
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General Electric Co
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General Electric Co
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00Assembling of devices or systems from individually processed components
    • B81C3/001Bonding of two components
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50Devices controlled by mechanical forces, e.g. pressure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0264Pressure sensors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/01Packaging MEMS
    • B81C2203/0109Bonding an individual cap on the substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/03Bonding two components
    • B81C2203/033Thermal bonding
    • B81C2203/036Fusion bonding
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/909Macrocell arrays, e.g. gate arrays with variable size or configuration of cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/909Controlled atmosphere

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
CN2006800310976A 2005-08-24 2006-08-22 压力传感器及其制造方法 Expired - Fee Related CN101248340B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/210,309 US7622782B2 (en) 2005-08-24 2005-08-24 Pressure sensors and methods of making the same
US11/210,309 2005-08-24
PCT/US2006/032858 WO2007024911A2 (en) 2005-08-24 2006-08-22 Pressure sensors and methods of making the same

Publications (2)

Publication Number Publication Date
CN101248340A CN101248340A (zh) 2008-08-20
CN101248340B true CN101248340B (zh) 2012-11-14

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CN2006800310976A Expired - Fee Related CN101248340B (zh) 2005-08-24 2006-08-22 压力传感器及其制造方法

Country Status (7)

Country Link
US (1) US7622782B2 (enExample)
EP (1) EP1920229B1 (enExample)
JP (1) JP5342236B2 (enExample)
KR (1) KR101296031B1 (enExample)
CN (1) CN101248340B (enExample)
AT (1) ATE532044T1 (enExample)
WO (1) WO2007024911A2 (enExample)

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CN109682510B (zh) * 2018-12-07 2021-05-04 中国电子科技集团公司第十三研究所 GaN高温压力传感器
CN109668661B (zh) * 2018-12-07 2021-05-04 中国电子科技集团公司第十三研究所 GaN高温压力传感器
CN111337166A (zh) * 2020-03-25 2020-06-26 电子科技大学 一种新型绝对压声表面波压力传感器的制备方法
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CN114577390A (zh) * 2022-03-03 2022-06-03 苏州跃芯微传感技术有限公司 一种低压mems压力传感器及其制备方法
CN118168706A (zh) * 2024-03-13 2024-06-11 京东方科技集团股份有限公司 压力传感器、压力传感器的制造方法、空调装置与车辆

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Also Published As

Publication number Publication date
KR20080031969A (ko) 2008-04-11
CN101248340A (zh) 2008-08-20
EP1920229B1 (en) 2011-11-02
EP1920229A2 (en) 2008-05-14
KR101296031B1 (ko) 2013-08-12
US20070052046A1 (en) 2007-03-08
US7622782B2 (en) 2009-11-24
ATE532044T1 (de) 2011-11-15
WO2007024911A2 (en) 2007-03-01
JP2009506323A (ja) 2009-02-12
WO2007024911A3 (en) 2007-06-14
JP5342236B2 (ja) 2013-11-13

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