CN101248340B - 压力传感器及其制造方法 - Google Patents
压力传感器及其制造方法 Download PDFInfo
- Publication number
- CN101248340B CN101248340B CN2006800310976A CN200680031097A CN101248340B CN 101248340 B CN101248340 B CN 101248340B CN 2006800310976 A CN2006800310976 A CN 2006800310976A CN 200680031097 A CN200680031097 A CN 200680031097A CN 101248340 B CN101248340 B CN 101248340B
- Authority
- CN
- China
- Prior art keywords
- pressure sensor
- cavity
- substrate
- lower substrate
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/036—Fusion bonding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/909—Macrocell arrays, e.g. gate arrays with variable size or configuration of cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/210,309 US7622782B2 (en) | 2005-08-24 | 2005-08-24 | Pressure sensors and methods of making the same |
| US11/210,309 | 2005-08-24 | ||
| PCT/US2006/032858 WO2007024911A2 (en) | 2005-08-24 | 2006-08-22 | Pressure sensors and methods of making the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101248340A CN101248340A (zh) | 2008-08-20 |
| CN101248340B true CN101248340B (zh) | 2012-11-14 |
Family
ID=37487427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006800310976A Expired - Fee Related CN101248340B (zh) | 2005-08-24 | 2006-08-22 | 压力传感器及其制造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7622782B2 (enExample) |
| EP (1) | EP1920229B1 (enExample) |
| JP (1) | JP5342236B2 (enExample) |
| KR (1) | KR101296031B1 (enExample) |
| CN (1) | CN101248340B (enExample) |
| AT (1) | ATE532044T1 (enExample) |
| WO (1) | WO2007024911A2 (enExample) |
Families Citing this family (80)
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| US7304412B2 (en) * | 2005-01-31 | 2007-12-04 | Avago Technologes Wireless Ip (Singapore) Pte Ltd | Apparatus embodying doped substrate portion |
| TWI289879B (en) * | 2005-09-30 | 2007-11-11 | Touch Micro System Tech | Method of fabricating pressure sensor |
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| FR2897937B1 (fr) * | 2006-02-24 | 2008-05-23 | Commissariat Energie Atomique | Capteur de pression a jauges resistives |
| DE102007027274A1 (de) * | 2007-06-11 | 2008-12-18 | Endress + Hauser Gmbh + Co. Kg | Differenzdrucksensor |
| US7784330B2 (en) * | 2007-10-05 | 2010-08-31 | Schlumberger Technology Corporation | Viscosity measurement |
| TWI364804B (en) * | 2007-11-14 | 2012-05-21 | Ind Tech Res Inst | Wafer level sensor package structure and method therefor |
| JP5001129B2 (ja) * | 2007-12-17 | 2012-08-15 | ホーチキ株式会社 | 熱センサ |
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| US8230745B2 (en) | 2008-11-19 | 2012-07-31 | Honeywell International Inc. | Wet/wet differential pressure sensor based on microelectronic packaging process |
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| US8322225B2 (en) * | 2009-07-10 | 2012-12-04 | Honeywell International Inc. | Sensor package assembly having an unconstrained sense die |
| TWI388038B (zh) * | 2009-07-23 | 2013-03-01 | Ind Tech Res Inst | 感測元件結構與製造方法 |
| US8739626B2 (en) | 2009-08-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Micromachined inertial sensor devices |
| US8258745B2 (en) | 2009-09-10 | 2012-09-04 | Syntheon, Llc | Surgical sterilizer with integrated battery charging device |
| US8082797B2 (en) | 2009-11-11 | 2011-12-27 | Honeywell International Inc. | Pressure sensor assembly |
| US8421168B2 (en) * | 2009-11-17 | 2013-04-16 | Fairchild Semiconductor Corporation | Microelectromechanical systems microphone packaging systems |
| JP5771900B2 (ja) * | 2010-03-26 | 2015-09-02 | セイコーエプソン株式会社 | 熱型光検出器、熱型光検出装置及び電子機器 |
| US8435821B2 (en) * | 2010-06-18 | 2013-05-07 | General Electric Company | Sensor and method for fabricating the same |
| US8230743B2 (en) | 2010-08-23 | 2012-07-31 | Honeywell International Inc. | Pressure sensor |
| WO2012037492A2 (en) | 2010-09-18 | 2012-03-22 | Janusz Bryzek | Multi-die mems package |
| US9278845B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope Z-axis electrode structure |
| EP2616771B8 (en) | 2010-09-18 | 2018-12-19 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
| CN103221331B (zh) | 2010-09-18 | 2016-02-03 | 快捷半导体公司 | 用于微机电系统的密封封装 |
| DE112011103124B4 (de) | 2010-09-18 | 2025-10-30 | Fairchild Semiconductor Corporation | Biegelager zum Verringern von Quadratur für mitschwingende mikromechanische Vorrichtungen |
| US9455354B2 (en) | 2010-09-18 | 2016-09-27 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
| EP2619130A4 (en) | 2010-09-20 | 2014-12-10 | Fairchild Semiconductor | SILICONE CONTINUITY WITH REDUCED CROSS-CAPACITY |
| EP2619536B1 (en) | 2010-09-20 | 2016-11-02 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
| DE102010063065A1 (de) * | 2010-12-14 | 2012-06-14 | Endress + Hauser Gmbh + Co. Kg | Drucksensor und Verfahren zu dessen Herstellung+ |
| US8809975B2 (en) * | 2010-12-15 | 2014-08-19 | Panasonic Corporation | Semiconductor pressure sensor |
| US7998777B1 (en) | 2010-12-15 | 2011-08-16 | General Electric Company | Method for fabricating a sensor |
| CN102183335B (zh) | 2011-03-15 | 2015-10-21 | 迈尔森电子(天津)有限公司 | Mems压力传感器及其制作方法 |
| US8709848B2 (en) * | 2011-04-15 | 2014-04-29 | Freescale Semiconductor, Inc. | Method for etched cavity devices |
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| CN104296899B (zh) * | 2014-09-28 | 2017-04-12 | 缪建民 | 高灵敏度硅压阻压力传感器及其制备方法 |
| CN105527042B (zh) * | 2014-10-15 | 2020-06-05 | 浙江盾安人工环境股份有限公司 | 压力传感器及其制造方法 |
| US9939338B2 (en) * | 2015-02-19 | 2018-04-10 | Stmicroelectronics S.R.L. | Pressure sensing device with cavity and related methods |
| CN205262665U (zh) | 2015-06-22 | 2016-05-25 | 意法半导体股份有限公司 | 压力传感器 |
| CN105241369B (zh) * | 2015-08-17 | 2018-02-09 | 王文 | 一种mems应变计芯片及其制造工艺 |
| JP6555214B2 (ja) * | 2016-08-25 | 2019-08-07 | 株式会社デンソー | 圧力センサ |
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| JP6468304B2 (ja) * | 2017-02-28 | 2019-02-13 | 株式会社デンソー | 物理量センサ |
| KR101985946B1 (ko) * | 2018-11-21 | 2019-06-04 | 호산엔지니어링(주) | Msg를 이용한 로드셀 장치 |
| CN109682510B (zh) * | 2018-12-07 | 2021-05-04 | 中国电子科技集团公司第十三研究所 | GaN高温压力传感器 |
| CN109668661B (zh) * | 2018-12-07 | 2021-05-04 | 中国电子科技集团公司第十三研究所 | GaN高温压力传感器 |
| CN111337166A (zh) * | 2020-03-25 | 2020-06-26 | 电子科技大学 | 一种新型绝对压声表面波压力传感器的制备方法 |
| MX2024002230A (es) * | 2021-08-31 | 2024-03-05 | Huba Control Ag | Celda de medicion de la presion metalica. |
| CN114577390A (zh) * | 2022-03-03 | 2022-06-03 | 苏州跃芯微传感技术有限公司 | 一种低压mems压力传感器及其制备方法 |
| CN118168706A (zh) * | 2024-03-13 | 2024-06-11 | 京东方科技集团股份有限公司 | 压力传感器、压力传感器的制造方法、空调装置与车辆 |
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| JP2005043159A (ja) * | 2003-07-25 | 2005-02-17 | Hitachi Unisia Automotive Ltd | 圧力センサ |
| JP4314977B2 (ja) * | 2003-11-20 | 2009-08-19 | パナソニック電工株式会社 | 圧力センサ及び該圧力センサの製造方法 |
-
2005
- 2005-08-24 US US11/210,309 patent/US7622782B2/en not_active Expired - Fee Related
-
2006
- 2006-08-22 AT AT06802137T patent/ATE532044T1/de active
- 2006-08-22 CN CN2006800310976A patent/CN101248340B/zh not_active Expired - Fee Related
- 2006-08-22 JP JP2008528091A patent/JP5342236B2/ja not_active Expired - Fee Related
- 2006-08-22 WO PCT/US2006/032858 patent/WO2007024911A2/en not_active Ceased
- 2006-08-22 EP EP06802137A patent/EP1920229B1/en not_active Not-in-force
- 2006-08-22 KR KR1020087004343A patent/KR101296031B1/ko not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4800758A (en) * | 1986-06-23 | 1989-01-31 | Rosemount Inc. | Pressure transducer with stress isolation for hard mounting |
| US20030019299A1 (en) * | 1998-03-31 | 2003-01-30 | Hitachi, Ltd. | Capacitive type pressure sensor |
| WO2000002028A1 (en) * | 1998-07-07 | 2000-01-13 | The Goodyear Tire & Rubber Company | Method of fabricating silicon capacitive sensor |
| EP1359402A1 (en) * | 2002-05-01 | 2003-11-05 | SensoNor asa | Pressure sensor |
| EP1522521A1 (en) * | 2003-10-10 | 2005-04-13 | SensoNor asa | Capacitive sensor |
| US20050172724A1 (en) * | 2004-02-09 | 2005-08-11 | Denso Corporation | Pressure sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080031969A (ko) | 2008-04-11 |
| CN101248340A (zh) | 2008-08-20 |
| EP1920229B1 (en) | 2011-11-02 |
| EP1920229A2 (en) | 2008-05-14 |
| KR101296031B1 (ko) | 2013-08-12 |
| US20070052046A1 (en) | 2007-03-08 |
| US7622782B2 (en) | 2009-11-24 |
| ATE532044T1 (de) | 2011-11-15 |
| WO2007024911A2 (en) | 2007-03-01 |
| JP2009506323A (ja) | 2009-02-12 |
| WO2007024911A3 (en) | 2007-06-14 |
| JP5342236B2 (ja) | 2013-11-13 |
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