ATE532044T1 - Drucksensoren und verfahren zu ihrer herstellung - Google Patents
Drucksensoren und verfahren zu ihrer herstellungInfo
- Publication number
- ATE532044T1 ATE532044T1 AT06802137T AT06802137T ATE532044T1 AT E532044 T1 ATE532044 T1 AT E532044T1 AT 06802137 T AT06802137 T AT 06802137T AT 06802137 T AT06802137 T AT 06802137T AT E532044 T1 ATE532044 T1 AT E532044T1
- Authority
- AT
- Austria
- Prior art keywords
- base substrate
- cavity
- substrate
- production
- pressure sensors
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000004927 fusion Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/036—Fusion bonding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/909—Macrocell arrays, e.g. gate arrays with variable size or configuration of cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/210,309 US7622782B2 (en) | 2005-08-24 | 2005-08-24 | Pressure sensors and methods of making the same |
PCT/US2006/032858 WO2007024911A2 (en) | 2005-08-24 | 2006-08-22 | Pressure sensors and methods of making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE532044T1 true ATE532044T1 (de) | 2011-11-15 |
Family
ID=37487427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06802137T ATE532044T1 (de) | 2005-08-24 | 2006-08-22 | Drucksensoren und verfahren zu ihrer herstellung |
Country Status (7)
Country | Link |
---|---|
US (1) | US7622782B2 (de) |
EP (1) | EP1920229B1 (de) |
JP (1) | JP5342236B2 (de) |
KR (1) | KR101296031B1 (de) |
CN (1) | CN101248340B (de) |
AT (1) | ATE532044T1 (de) |
WO (1) | WO2007024911A2 (de) |
Families Citing this family (78)
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CN103221333B (zh) | 2010-09-18 | 2017-05-31 | 快捷半导体公司 | 多晶片mems封装 |
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DE112011103124T5 (de) | 2010-09-18 | 2013-12-19 | Fairchild Semiconductor Corporation | Biegelager zum Verringern von Quadratur für mitschwingende mikromechanische Vorrichtungen |
WO2012037538A2 (en) | 2010-09-18 | 2012-03-22 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
US9455354B2 (en) | 2010-09-18 | 2016-09-27 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
KR101332701B1 (ko) | 2010-09-20 | 2013-11-25 | 페어차일드 세미컨덕터 코포레이션 | 기준 커패시터를 포함하는 미소 전자기계 압력 센서 |
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CN102183335B (zh) * | 2011-03-15 | 2015-10-21 | 迈尔森电子(天津)有限公司 | Mems压力传感器及其制作方法 |
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US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
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KR102058489B1 (ko) | 2012-04-05 | 2019-12-23 | 페어차일드 세미컨덕터 코포레이션 | 멤스 장치 프론트 엔드 전하 증폭기 |
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DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
EP2910918B1 (de) * | 2012-10-17 | 2018-07-25 | Kabushiki Kaisha Saginomiya Seisakusho | Drucksensor und sensoreinheit mit drucksensor |
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CN103964370A (zh) * | 2013-01-29 | 2014-08-06 | 北京大学 | 一种电容式压力传感器的制备方法 |
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CN104296899B (zh) * | 2014-09-28 | 2017-04-12 | 缪建民 | 高灵敏度硅压阻压力传感器及其制备方法 |
CN105527042B (zh) * | 2014-10-15 | 2020-06-05 | 浙江盾安人工环境股份有限公司 | 压力传感器及其制造方法 |
US9939338B2 (en) * | 2015-02-19 | 2018-04-10 | Stmicroelectronics S.R.L. | Pressure sensing device with cavity and related methods |
CN205262665U (zh) | 2015-06-22 | 2016-05-25 | 意法半导体股份有限公司 | 压力传感器 |
CN105241369B (zh) | 2015-08-17 | 2018-02-09 | 王文 | 一种mems应变计芯片及其制造工艺 |
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CN109682510B (zh) * | 2018-12-07 | 2021-05-04 | 中国电子科技集团公司第十三研究所 | GaN高温压力传感器 |
CN111337166A (zh) * | 2020-03-25 | 2020-06-26 | 电子科技大学 | 一种新型绝对压声表面波压力传感器的制备方法 |
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-
2005
- 2005-08-24 US US11/210,309 patent/US7622782B2/en not_active Expired - Fee Related
-
2006
- 2006-08-22 KR KR1020087004343A patent/KR101296031B1/ko not_active IP Right Cessation
- 2006-08-22 EP EP06802137A patent/EP1920229B1/de not_active Not-in-force
- 2006-08-22 CN CN2006800310976A patent/CN101248340B/zh not_active Expired - Fee Related
- 2006-08-22 AT AT06802137T patent/ATE532044T1/de active
- 2006-08-22 WO PCT/US2006/032858 patent/WO2007024911A2/en active Application Filing
- 2006-08-22 JP JP2008528091A patent/JP5342236B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2007024911A2 (en) | 2007-03-01 |
CN101248340B (zh) | 2012-11-14 |
EP1920229A2 (de) | 2008-05-14 |
EP1920229B1 (de) | 2011-11-02 |
KR101296031B1 (ko) | 2013-08-12 |
US7622782B2 (en) | 2009-11-24 |
US20070052046A1 (en) | 2007-03-08 |
JP2009506323A (ja) | 2009-02-12 |
KR20080031969A (ko) | 2008-04-11 |
JP5342236B2 (ja) | 2013-11-13 |
WO2007024911A3 (en) | 2007-06-14 |
CN101248340A (zh) | 2008-08-20 |
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