CN101221363B - 光刻设备和器件制造方法 - Google Patents

光刻设备和器件制造方法 Download PDF

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Publication number
CN101221363B
CN101221363B CN2007101527498A CN200710152749A CN101221363B CN 101221363 B CN101221363 B CN 101221363B CN 2007101527498 A CN2007101527498 A CN 2007101527498A CN 200710152749 A CN200710152749 A CN 200710152749A CN 101221363 B CN101221363 B CN 101221363B
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CN
China
Prior art keywords
substrate
projection system
movement
die
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007101527498A
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English (en)
Chinese (zh)
Other versions
CN101221363A (zh
Inventor
鲍勃·斯特里弗克尔克
尧里·乔哈尼斯·劳仁提尤斯·玛丽亚·凡达麦乐恩
里查德·莫尔曼
塞德里克·德瑟
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ASML Netherlands BV
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ASML Netherlands BV
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Publication date
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Publication of CN101221363A publication Critical patent/CN101221363A/zh
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Publication of CN101221363B publication Critical patent/CN101221363B/zh
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN2007101527498A 2006-09-20 2007-09-20 光刻设备和器件制造方法 Expired - Fee Related CN101221363B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/523,743 2006-09-20
US11/523,743 US8330936B2 (en) 2006-09-20 2006-09-20 Lithographic apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
CN101221363A CN101221363A (zh) 2008-07-16
CN101221363B true CN101221363B (zh) 2011-09-28

Family

ID=38782682

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101527498A Expired - Fee Related CN101221363B (zh) 2006-09-20 2007-09-20 光刻设备和器件制造方法

Country Status (8)

Country Link
US (1) US8330936B2 (https=)
EP (1) EP1903398B1 (https=)
JP (2) JP4839288B2 (https=)
KR (1) KR100933000B1 (https=)
CN (1) CN101221363B (https=)
DE (1) DE602007012032D1 (https=)
SG (1) SG141385A1 (https=)
TW (1) TWI375129B (https=)

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JP5089143B2 (ja) * 2006-11-20 2012-12-05 キヤノン株式会社 液浸露光装置
US8134685B2 (en) 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US20090310115A1 (en) * 2008-06-12 2009-12-17 Nikon Corporation Apparatus and method for exposing adjacent sites on a substrate
EP2151717A1 (en) * 2008-08-05 2010-02-10 ASML Holding N.V. Full wafer width scanning using step and scan system
NL2003226A (en) * 2008-08-19 2010-03-09 Asml Netherlands Bv Lithographic apparatus, drying device, metrology apparatus and device manufacturing method.
JP5354339B2 (ja) * 2008-12-18 2013-11-27 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
US8953143B2 (en) * 2009-04-24 2015-02-10 Nikon Corporation Liquid immersion member
US8610878B2 (en) * 2010-03-04 2013-12-17 Asml Netherlands B.V. Lithographic apparatus and method
NL2006818A (en) 2010-07-02 2012-01-03 Asml Netherlands Bv A method of adjusting speed and/or routing of a table movement plan and a lithographic apparatus.
NL2008157A (en) * 2011-02-22 2012-08-24 Asml Netherlands Bv Lithographic apparatus and lithographic projection method.
US8906599B2 (en) 2012-05-17 2014-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Enhanced scanner throughput system and method
US9568828B2 (en) * 2012-10-12 2017-02-14 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
JP5986538B2 (ja) 2013-06-10 2016-09-06 キヤノン株式会社 露光装置および物品の製造方法
JP2016154241A (ja) * 2013-07-02 2016-08-25 キヤノン株式会社 パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法
JP5960198B2 (ja) 2013-07-02 2016-08-02 キヤノン株式会社 パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法
US9760027B2 (en) * 2013-10-17 2017-09-12 United Microelectronics Corp. Scanner routing method for particle removal
CN104793467B (zh) * 2014-01-20 2017-05-17 中芯国际集成电路制造(上海)有限公司 曝光装置、掩膜板及曝光方法
WO2019101749A1 (en) 2017-11-21 2019-05-31 Akzo Nobel Chemicals International B.V. Thermally expandable microspheres prepared from bio-based monomers
JP7504168B2 (ja) * 2022-08-10 2024-06-21 キヤノン株式会社 露光装置、露光方法及び物品の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6342942B1 (en) * 1998-06-30 2002-01-29 Canon Kabushiki Kaisha Exposure apparatus, exposure control method, and device fabrication method using the exposure apparatus

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US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US6118515A (en) * 1993-12-08 2000-09-12 Nikon Corporation Scanning exposure method
JPH10303126A (ja) * 1997-02-28 1998-11-13 Nikon Corp 移動シーケンスの決定方法
WO1999046807A1 (en) * 1998-03-09 1999-09-16 Nikon Corporation Scanning exposure method, scanning exposure apparatus and its manufacturing method, and device and its manufacturing method
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
US6734117B2 (en) * 2002-03-12 2004-05-11 Nikon Corporation Periodic clamping method and apparatus to reduce thermal stress in a wafer
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1420299B1 (en) 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
SG135052A1 (en) * 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420300B1 (en) 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1571697A4 (en) * 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND COMPONENT MANUFACTURING METHOD
JP2005072132A (ja) 2003-08-21 2005-03-17 Nikon Corp 露光装置及びデバイス製造方法
DE60319087T2 (de) 2003-10-16 2009-02-05 Asml Netherlands B.V. Lithographische Methode zur Herstellung einer Vorrichtung
KR100585108B1 (ko) * 2003-11-14 2006-06-01 삼성전자주식회사 스캔 방식의 노광 장치를 이용한 웨이퍼 노광 방법
US7244534B2 (en) 2004-04-23 2007-07-17 Asml Netherlands B.V. Device manufacturing method
JPWO2005106930A1 (ja) 2004-04-27 2008-03-21 株式会社ニコン 露光方法、露光装置及びデバイス製造方法
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4003885B2 (ja) * 2004-08-23 2007-11-07 Ｔｄｋ株式会社 露光方法および露光装置
JP4625673B2 (ja) 2004-10-15 2011-02-02 株式会社東芝 露光方法及び露光装置
DE602006012746D1 (de) 2005-01-14 2010-04-22 Asml Netherlands Bv Lithografische Vorrichtung und Herstellungsverfahren
US7462429B2 (en) 2005-10-12 2008-12-09 Asml Netherlands B.V. Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7666576B2 (en) * 2006-06-07 2010-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Exposure scan and step direction optimization
US7656502B2 (en) 2006-06-22 2010-02-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6342942B1 (en) * 1998-06-30 2002-01-29 Canon Kabushiki Kaisha Exposure apparatus, exposure control method, and device fabrication method using the exposure apparatus

Also Published As

Publication number Publication date
JP2008078648A (ja) 2008-04-03
JP2011018915A (ja) 2011-01-27
US8330936B2 (en) 2012-12-11
DE602007012032D1 (de) 2011-03-03
JP4839288B2 (ja) 2011-12-21
KR20080026505A (ko) 2008-03-25
US20080068570A1 (en) 2008-03-20
SG141385A1 (en) 2008-04-28
EP1903398A1 (en) 2008-03-26
EP1903398B1 (en) 2011-01-19
CN101221363A (zh) 2008-07-16
KR100933000B1 (ko) 2009-12-21
TW200821769A (en) 2008-05-16
TWI375129B (en) 2012-10-21
JP5214678B2 (ja) 2013-06-19

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