CN101197300B - 集成电路生产过程中ppid的监控方法 - Google Patents
集成电路生产过程中ppid的监控方法 Download PDFInfo
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- CN101197300B CN101197300B CN2007101729358A CN200710172935A CN101197300B CN 101197300 B CN101197300 B CN 101197300B CN 2007101729358 A CN2007101729358 A CN 2007101729358A CN 200710172935 A CN200710172935 A CN 200710172935A CN 101197300 B CN101197300 B CN 101197300B
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- monitoring method
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- mosfet device
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CN2007101729358A CN101197300B (zh) | 2007-12-25 | 2007-12-25 | 集成电路生产过程中ppid的监控方法 |
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CN2007101729358A CN101197300B (zh) | 2007-12-25 | 2007-12-25 | 集成电路生产过程中ppid的监控方法 |
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CN101197300A CN101197300A (zh) | 2008-06-11 |
CN101197300B true CN101197300B (zh) | 2011-11-09 |
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CN2007101729358A Active CN101197300B (zh) | 2007-12-25 | 2007-12-25 | 集成电路生产过程中ppid的监控方法 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101345233B (zh) * | 2008-08-19 | 2012-01-18 | 上海宏力半导体制造有限公司 | 浅沟槽隔离工艺中库伊效应的测试结构及监测方法 |
CN101770964B (zh) * | 2008-12-30 | 2011-09-14 | 中芯国际集成电路制造(上海)有限公司 | 形成钝化层窗口工艺中引入电荷的测试方法 |
CN102034816B (zh) * | 2009-09-29 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | 等离子体引入损伤测试装置及制作测试装置的方法 |
CN102142429B (zh) * | 2010-01-28 | 2013-02-27 | 中芯国际集成电路制造(上海)有限公司 | 等离子体损伤检测结构及其制作方法 |
CN103872017B (zh) * | 2012-12-11 | 2017-02-15 | 中芯国际集成电路制造(上海)有限公司 | 可用于pid与ild测试的测试结构及晶圆 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6372525B1 (en) * | 1999-12-20 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company | Wafer-level antenna effect detection pattern for VLSI |
US6396075B1 (en) * | 1998-05-27 | 2002-05-28 | Texas Instruments Incorporated | Transient fuse for change-induced damage detection |
JP2006351989A (ja) * | 2005-06-20 | 2006-12-28 | Seiko Epson Corp | 半導体装置の製造工程におけるチャージダメージ定量評価方法及びその装置、チャージダメージ定量評価用ウェハ |
CN1937195A (zh) * | 2005-09-23 | 2007-03-28 | 中芯国际集成电路制造(上海)有限公司 | 提高超薄等离子体氮氧化硅电性测试准确性的方法 |
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2007
- 2007-12-25 CN CN2007101729358A patent/CN101197300B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6396075B1 (en) * | 1998-05-27 | 2002-05-28 | Texas Instruments Incorporated | Transient fuse for change-induced damage detection |
US6372525B1 (en) * | 1999-12-20 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company | Wafer-level antenna effect detection pattern for VLSI |
JP2006351989A (ja) * | 2005-06-20 | 2006-12-28 | Seiko Epson Corp | 半導体装置の製造工程におけるチャージダメージ定量評価方法及びその装置、チャージダメージ定量評価用ウェハ |
CN1937195A (zh) * | 2005-09-23 | 2007-03-28 | 中芯国际集成电路制造(上海)有限公司 | 提高超薄等离子体氮氧化硅电性测试准确性的方法 |
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CN101197300A (zh) | 2008-06-11 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140424 |
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Effective date of registration: 20140424 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 818 Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |