CN101345233B - 浅沟槽隔离工艺中库伊效应的测试结构及监测方法 - Google Patents
浅沟槽隔离工艺中库伊效应的测试结构及监测方法 Download PDFInfo
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Families Citing this family (7)
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CN101800212B (zh) * | 2010-03-12 | 2013-09-25 | 上海宏力半导体制造有限公司 | 半导体器件栅氧化层完整性的测试结构 |
CN101853843B (zh) * | 2010-03-12 | 2015-03-18 | 上海华虹宏力半导体制造有限公司 | 半导体器件栅氧化层完整性的测试结构 |
CN103915415B (zh) * | 2012-12-31 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | 集成电路的可靠性分析测试结构及其测试方法 |
CN104425455B (zh) * | 2013-09-09 | 2017-06-27 | 中芯国际集成电路制造(上海)有限公司 | 浅沟槽隔离结构边沟问题的测试结构和方法 |
CN104465616B (zh) * | 2013-09-23 | 2017-10-27 | 中芯国际集成电路制造(上海)有限公司 | 集成电路的可靠性分析测试结构及其测试方法 |
CN104576612B (zh) * | 2013-10-23 | 2017-09-26 | 中芯国际集成电路制造(上海)有限公司 | 测试结构及其形成方法、测试结构的测试方法 |
CN104617004A (zh) * | 2013-11-01 | 2015-05-13 | 北大方正集团有限公司 | 一种监测金属间介质层的装置和方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US6201277B1 (en) * | 1993-08-31 | 2001-03-13 | Texas Instruments Incorporated | Slot trench isolation for flash EPROM |
CN1540673A (zh) * | 2003-10-30 | 2004-10-27 | 彭泽忠 | 利用击穿电压的半导体存储单元薄氧化层的测试方法 |
CN101197300A (zh) * | 2007-12-25 | 2008-06-11 | 上海宏力半导体制造有限公司 | 集成电路生产过程中ppid的监控方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6201277B1 (en) * | 1993-08-31 | 2001-03-13 | Texas Instruments Incorporated | Slot trench isolation for flash EPROM |
CN1540673A (zh) * | 2003-10-30 | 2004-10-27 | 彭泽忠 | 利用击穿电压的半导体存储单元薄氧化层的测试方法 |
CN101197300A (zh) * | 2007-12-25 | 2008-06-11 | 上海宏力半导体制造有限公司 | 集成电路生产过程中ppid的监控方法 |
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