CN101740549B - 精确评估栅氧可靠性能的测试结构及测试方法 - Google Patents
精确评估栅氧可靠性能的测试结构及测试方法 Download PDFInfo
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- CN101740549B CN101740549B CN 200810043988 CN200810043988A CN101740549B CN 101740549 B CN101740549 B CN 101740549B CN 200810043988 CN200810043988 CN 200810043988 CN 200810043988 A CN200810043988 A CN 200810043988A CN 101740549 B CN101740549 B CN 101740549B
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CN 200810043988 CN101740549B (zh) | 2008-11-24 | 2008-11-24 | 精确评估栅氧可靠性能的测试结构及测试方法 |
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CN 200810043988 CN101740549B (zh) | 2008-11-24 | 2008-11-24 | 精确评估栅氧可靠性能的测试结构及测试方法 |
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CN101740549A CN101740549A (zh) | 2010-06-16 |
CN101740549B true CN101740549B (zh) | 2012-08-01 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10103060B2 (en) | 2015-06-18 | 2018-10-16 | Globalfoundries Inc. | Test structures for dielectric reliability evaluations |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8598679B2 (en) * | 2010-11-30 | 2013-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked and tunable power fuse |
CN102169869B (zh) * | 2011-02-01 | 2012-10-10 | 北京大学 | 用于检测mos器件晶向相关性的可靠性测试结构及方法 |
CN102446783A (zh) * | 2011-09-08 | 2012-05-09 | 上海华力微电子有限公司 | 一种用于监测离子注入剂量的方法 |
CN103094144B (zh) * | 2011-10-31 | 2015-11-25 | 无锡华润上华科技有限公司 | 一种用于预估mos管的阈值电压的方法 |
CN102522386B (zh) * | 2011-12-02 | 2014-06-11 | 北京大学 | 栅氧化层界面陷阱密度测试结构及测试方法 |
CN103367193B (zh) * | 2013-07-24 | 2015-10-07 | 北京大学 | 栅氧化层陷阱密度及位置的测试方法及装置 |
CN104465614B (zh) * | 2013-09-18 | 2017-02-22 | 中芯国际集成电路制造(上海)有限公司 | 测试结构和对应的测试方法 |
CN103869230B (zh) * | 2014-01-20 | 2017-10-24 | 南京大学 | 一种表征小尺寸cmos器件中界面态和氧化层陷阱局域分布的方法 |
CN105336730B (zh) * | 2014-08-01 | 2018-11-02 | 中芯国际集成电路制造(上海)有限公司 | 用于首层金属至栅极的异常检测的层间介质测试结构 |
CN106449601B (zh) * | 2015-08-04 | 2019-04-16 | 无锡华润华晶微电子有限公司 | 一种半导体器件的制造方法和测试电路 |
CN105467290A (zh) * | 2015-11-23 | 2016-04-06 | 上海卫星装备研究所 | 宇航级vmos管功能性完好的测试方法 |
IT201800004752A1 (it) * | 2018-04-20 | 2019-10-20 | Dispositivo elettronico con elemento di protezione da cortocircuiti, metodo di fabbricazione e metodo di progettazione | |
US11621261B2 (en) | 2021-07-05 | 2023-04-04 | Changxin Memory Technologies, Inc. | Detection circuit and detection method |
CN115575734A (zh) * | 2021-07-05 | 2023-01-06 | 长鑫存储技术有限公司 | 检测电路及检测方法 |
CN118011175A (zh) * | 2024-04-09 | 2024-05-10 | 北京智芯微电子科技有限公司 | 晶体管器件缺陷分析方法及系统 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7361968B2 (en) * | 2006-03-23 | 2008-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for integrally forming an electrical fuse device and a MOS transistor |
CN101197348A (zh) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | 多用途多晶硅边缘测试结构 |
CN100413069C (zh) * | 2005-02-02 | 2008-08-20 | 联华电子股份有限公司 | 电熔丝的结构 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100413069C (zh) * | 2005-02-02 | 2008-08-20 | 联华电子股份有限公司 | 电熔丝的结构 |
US7361968B2 (en) * | 2006-03-23 | 2008-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for integrally forming an electrical fuse device and a MOS transistor |
CN101197348A (zh) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | 多用途多晶硅边缘测试结构 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10103060B2 (en) | 2015-06-18 | 2018-10-16 | Globalfoundries Inc. | Test structures for dielectric reliability evaluations |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |