CN101170074A - 一种提高超深亚微米mosfet抗辐照特性的方法 - Google Patents
一种提高超深亚微米mosfet抗辐照特性的方法 Download PDFInfo
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- CN101170074A CN101170074A CNA2007101772502A CN200710177250A CN101170074A CN 101170074 A CN101170074 A CN 101170074A CN A2007101772502 A CNA2007101772502 A CN A2007101772502A CN 200710177250 A CN200710177250 A CN 200710177250A CN 101170074 A CN101170074 A CN 101170074A
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CN2007101772502A CN101170074B (zh) | 2007-11-13 | 2007-11-13 | 一种提高超深亚微米mosfet抗辐照特性的方法 |
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CN2007101772502A CN101170074B (zh) | 2007-11-13 | 2007-11-13 | 一种提高超深亚微米mosfet抗辐照特性的方法 |
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CN101170074A true CN101170074A (zh) | 2008-04-30 |
CN101170074B CN101170074B (zh) | 2010-08-11 |
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CN2007101772502A Expired - Fee Related CN101170074B (zh) | 2007-11-13 | 2007-11-13 | 一种提高超深亚微米mosfet抗辐照特性的方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102315155A (zh) * | 2011-09-28 | 2012-01-11 | 上海宏力半导体制造有限公司 | 浅沟槽隔离结构及其形成方法,半导体结构及其形成方法 |
CN101996868B (zh) * | 2009-08-27 | 2012-06-20 | 上海华虹Nec电子有限公司 | 交替排列的p型和n型半导体薄层的形成方法 |
CN103000512A (zh) * | 2011-09-13 | 2013-03-27 | 联华电子股份有限公司 | 定义深沟槽用的硬掩模层的图案化方法 |
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US5721448A (en) * | 1996-07-30 | 1998-02-24 | International Business Machines Corporation | Integrated circuit chip having isolation trenches composed of a dielectric layer with oxidation catalyst material |
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2007
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101996868B (zh) * | 2009-08-27 | 2012-06-20 | 上海华虹Nec电子有限公司 | 交替排列的p型和n型半导体薄层的形成方法 |
CN103000512A (zh) * | 2011-09-13 | 2013-03-27 | 联华电子股份有限公司 | 定义深沟槽用的硬掩模层的图案化方法 |
CN103000512B (zh) * | 2011-09-13 | 2017-08-22 | 联华电子股份有限公司 | 定义深沟槽用的硬掩模层的图案化方法 |
CN102315155A (zh) * | 2011-09-28 | 2012-01-11 | 上海宏力半导体制造有限公司 | 浅沟槽隔离结构及其形成方法,半导体结构及其形成方法 |
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