CN101133688A - 微波等离子体处理装置 - Google Patents

微波等离子体处理装置 Download PDF

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Publication number
CN101133688A
CN101133688A CNA2006800070510A CN200680007051A CN101133688A CN 101133688 A CN101133688 A CN 101133688A CN A2006800070510 A CNA2006800070510 A CN A2006800070510A CN 200680007051 A CN200680007051 A CN 200680007051A CN 101133688 A CN101133688 A CN 101133688A
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CN
China
Prior art keywords
microwave
chamber
plate
planar antenna
slow wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006800070510A
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English (en)
Chinese (zh)
Inventor
田才忠
石桥清隆
野泽俊久
山本伸彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101133688A publication Critical patent/CN101133688A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CNA2006800070510A 2005-03-04 2006-02-21 微波等离子体处理装置 Pending CN101133688A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP060151/2005 2005-03-04
JP2005060151A JP2006244891A (ja) 2005-03-04 2005-03-04 マイクロ波プラズマ処理装置

Publications (1)

Publication Number Publication Date
CN101133688A true CN101133688A (zh) 2008-02-27

Family

ID=36941020

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006800070510A Pending CN101133688A (zh) 2005-03-04 2006-02-21 微波等离子体处理装置

Country Status (4)

Country Link
JP (1) JP2006244891A (ko)
KR (1) KR100960424B1 (ko)
CN (1) CN101133688A (ko)
WO (1) WO2006092985A1 (ko)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101849444B (zh) * 2008-03-14 2012-08-29 东京毅力科创株式会社 平板天线部件以及具备其的等离子体处理装置
CN102804931A (zh) * 2009-06-19 2012-11-28 东京毅力科创株式会社 等离子体处理装置及等离子体处理装置用冷却装置
CN106053357A (zh) * 2016-07-12 2016-10-26 中国石油化工股份有限公司 一种等离子体原位表征方法
CN106661732A (zh) * 2014-06-16 2017-05-10 六号元素技术有限公司 用于制造合成金刚石材料的微波等离子体反应器
CN110284124A (zh) * 2018-03-19 2019-09-27 株式会社神户制钢所 等离子体cvd装置和薄膜的制造方法
CN113348531A (zh) * 2019-01-25 2021-09-03 伊宁有限公司 气化装置和气化装置的具有微波等离子体减速系统的等离子体开关
CN114689267A (zh) * 2022-05-30 2022-07-01 中国空气动力研究与发展中心超高速空气动力研究所 等离子体电子密度分布的七通道微波干涉仪数据处理方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5422854B2 (ja) * 2007-08-31 2014-02-19 国立大学法人東北大学 半導体装置の製造方法
KR101235027B1 (ko) * 2008-07-15 2013-02-21 도쿄엘렉트론가부시키가이샤 마이크로파 플라즈마 처리 장치 및, 냉각 재킷의 제조 방법
JP2010177065A (ja) * 2009-01-30 2010-08-12 Tokyo Electron Ltd マイクロ波プラズマ処理装置、マイクロ波プラズマ処理装置用のスロット板付き誘電体板及びその製造方法
JP5578865B2 (ja) * 2009-03-25 2014-08-27 東京エレクトロン株式会社 誘導結合プラズマ処理装置のカバー固定具およびカバー固定装置
JP2011029416A (ja) * 2009-07-27 2011-02-10 Tokyo Electron Ltd 平面アンテナ部材およびこれを備えたプラズマ処理装置
JP5214774B2 (ja) 2010-11-19 2013-06-19 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5377587B2 (ja) * 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
KR101966797B1 (ko) * 2011-10-13 2019-04-08 세메스 주식회사 기판 처리 장치
JP2016086099A (ja) * 2014-10-27 2016-05-19 東京エレクトロン株式会社 プラズマ処理装置
JP2016225203A (ja) * 2015-06-02 2016-12-28 東京エレクトロン株式会社 プラズマ処理装置
JP6883953B2 (ja) * 2016-06-10 2021-06-09 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法
KR101966807B1 (ko) * 2017-03-27 2019-04-08 세메스 주식회사 기판 처리 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195499A (ja) * 1997-12-29 1999-07-21 Anelva Corp プラズマ処理装置
JP3893888B2 (ja) * 2001-03-19 2007-03-14 株式会社日立製作所 プラズマ処理装置
JP4540926B2 (ja) * 2002-07-05 2010-09-08 忠弘 大見 プラズマ処理装置
JP2004055614A (ja) * 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
JP2004265916A (ja) * 2003-02-06 2004-09-24 Tokyo Electron Ltd 基板のプラズマ酸化処理方法
JP4588329B2 (ja) * 2003-02-14 2010-12-01 東京エレクトロン株式会社 プラズマ発生装置およびリモートプラズマ処理装置
JP4073816B2 (ja) * 2003-03-31 2008-04-09 シャープ株式会社 プラズマプロセス装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101849444B (zh) * 2008-03-14 2012-08-29 东京毅力科创株式会社 平板天线部件以及具备其的等离子体处理装置
CN102804931A (zh) * 2009-06-19 2012-11-28 东京毅力科创株式会社 等离子体处理装置及等离子体处理装置用冷却装置
CN106661732A (zh) * 2014-06-16 2017-05-10 六号元素技术有限公司 用于制造合成金刚石材料的微波等离子体反应器
CN106661732B (zh) * 2014-06-16 2019-03-19 六号元素技术有限公司 用于制造合成金刚石材料的微波等离子体反应器以及制造合成金刚石材料的方法
CN106053357A (zh) * 2016-07-12 2016-10-26 中国石油化工股份有限公司 一种等离子体原位表征方法
CN110284124A (zh) * 2018-03-19 2019-09-27 株式会社神户制钢所 等离子体cvd装置和薄膜的制造方法
CN113348531A (zh) * 2019-01-25 2021-09-03 伊宁有限公司 气化装置和气化装置的具有微波等离子体减速系统的等离子体开关
CN113348531B (zh) * 2019-01-25 2022-07-08 伊宁有限公司 气化装置和气化装置的具有微波等离子体减速系统的等离子体开关
CN114689267A (zh) * 2022-05-30 2022-07-01 中国空气动力研究与发展中心超高速空气动力研究所 等离子体电子密度分布的七通道微波干涉仪数据处理方法
CN114689267B (zh) * 2022-05-30 2022-08-05 中国空气动力研究与发展中心超高速空气动力研究所 等离子体电子密度分布的七通道微波干涉仪数据处理方法

Also Published As

Publication number Publication date
KR100960424B1 (ko) 2010-05-28
WO2006092985A1 (ja) 2006-09-08
JP2006244891A (ja) 2006-09-14
KR20070108929A (ko) 2007-11-13

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SE01 Entry into force of request for substantive examination
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Open date: 20080227