CN101107383A - 改善低k叠层之间粘附性的界面工程 - Google Patents
改善低k叠层之间粘附性的界面工程 Download PDFInfo
- Publication number
- CN101107383A CN101107383A CNA2006800025996A CN200680002599A CN101107383A CN 101107383 A CN101107383 A CN 101107383A CN A2006800025996 A CNA2006800025996 A CN A2006800025996A CN 200680002599 A CN200680002599 A CN 200680002599A CN 101107383 A CN101107383 A CN 101107383A
- Authority
- CN
- China
- Prior art keywords
- silicon oxide
- oxide layer
- layer
- flow rate
- atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 49
- 239000000203 mixture Substances 0.000 claims abstract description 27
- 230000001590 oxidative effect Effects 0.000 claims abstract description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 60
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 56
- 230000008021 deposition Effects 0.000 claims description 45
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims description 40
- 239000008246 gaseous mixture Substances 0.000 claims description 38
- 150000001875 compounds Chemical class 0.000 claims description 31
- 238000009826 distribution Methods 0.000 claims description 23
- 230000001174 ascending effect Effects 0.000 claims description 21
- 230000007704 transition Effects 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001307 helium Substances 0.000 claims description 10
- 229910052734 helium Inorganic materials 0.000 claims description 10
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 10
- 229910018557 Si O Inorganic materials 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 46
- 230000008569 process Effects 0.000 abstract description 22
- 238000012545 processing Methods 0.000 abstract description 20
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 150000003961 organosilicon compounds Chemical class 0.000 abstract 1
- 125000004429 atom Chemical group 0.000 description 24
- 239000007921 spray Substances 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 239000012159 carrier gas Substances 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 235000011089 carbon dioxide Nutrition 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- NBBQQQJUOYRZCA-UHFFFAOYSA-N diethoxymethylsilane Chemical compound CCOC([SiH3])OCC NBBQQQJUOYRZCA-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical class O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- -1 cyclic organosilicon compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- RSNQKPMXXVDJFG-UHFFFAOYSA-N tetrasiloxane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH3] RSNQKPMXXVDJFG-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 229940094989 trimethylsilane Drugs 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/029—Graded interfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
Abstract
本发明提供了一种在不存在等离子体电弧放电的条件下沉积有机硅电介质层的方法,所述有机硅电介质层对设置在单个处理室中的下方衬底具有高粘附强度。该方法包括:将衬底定位在具有通电电极的处理室中;将界面气体混合物流入所述处理室,所述界面气体混合物包含一种或更多种有机硅化合物和一种或更多种氧化气体;通过改变工艺参数,将氧化硅层沉积在所述衬底上,其中所述通电电极的DC偏压的变化小于60伏特。
Description
技术领域
本发明的实施方式一般性地涉及集成电路的制造。更具体地,本发明的实施方式涉及在衬底上沉积有机硅酸盐层的方法。
背景技术
在集成电路的制造中,等离子体工艺被越来越多地用来取代热工艺。与热处理相比,等离子体处理具有若干个优点。例如,等离子体增强化学气相沉积(PECVD)可使沉积工艺在大大低于类似的热工艺所需温度的温度下进行。对于热预算要求严格的工艺,例如在特大规模或超大规模集成电路(VLSI或ULSI)器件制造中,这是有利的。
然而,集成电路制造中的等离子体处理所遇到的一个问题是,由于器件暴露于非均匀的等离子体条件,例如通过改变工艺条件所引起的电场梯度,会发生器件损坏。尽管器件损坏的易发性或程度通常至少部分地依赖于器件制造的阶段和器件类型,但是器件的很多种类型和许多个阶段均会遭受等离子体致损坏(PID)。例如,由于表面电荷的积累以及在处理过程中形成电势梯度,其上沉积有阻挡层或电介质层的衬底更容易受到PID。此外,随着器件尺寸变得越来越小并且电介质层变得越来越薄,器件越来越容易受到PID。
为了进一步减小集成电路上的器件尺寸,需要使用低电阻率的导电材料和低介电常数(低k)的绝缘体,以减少相邻金属线之间的电容耦合。形成低k电介质层的方法包括将有机硅酸盐前驱体气体进行PECVD以形成有机硅酸盐电介质层,例如掺杂碳的氧化硅膜。本领域的一个挑战是开发具有低k值而且对下方的衬底或相邻的电介质扩散阻挡层材料呈现出期望的粘附性质的掺杂碳的氧化硅电介质膜,其中电介质扩散阻挡层材料包括硅、二氧化硅、碳化硅、氮化硅、掺杂氧的碳化硅、钛、氮化钛、钽、氮化钽、钨、铝、铜及其组合。粘附性不够可能导致低k电介质层从下方衬底层离以及器件的潜在失效。一种提高掺杂碳的氧化硅膜的方法是在掺杂碳的氧化硅层与下方的阻挡层之间插入氧化硅薄膜。然而,该氧化硅薄层必须是组合的电介质膜的一小部分,以保持介电常数的明显下降。此外,在沉积掺杂碳的氧化硅层之前沉积氧化硅薄层较大地增加了处理时间,除非这些层在相同的室内顺序沉积。当沉积条件变化时,顺序沉积导致等离子体电弧放电。等离子体电弧放电损坏了衬底表面并有效地抵消了在相同的室中沉积氧化硅薄膜和掺杂碳的氧化硅层的优点。
因此,需要一种沉积对下方衬底具有高粘附强度的有机硅酸盐电介质层而不存在等离子体电弧放电的工艺。
发明内容
本发明一般性地提供了沉积有机硅酸盐电介质层的方法,该方法包括:在不存在等离子体电弧放电的条件下,在相同的处理室中顺序沉积具有低碳含量的氧化硅层和具有低介电常数的掺杂碳的氧化硅层。在一种实施方式中,沉积有机硅酸盐电介质层的方法包括:在第一沉积条件(其中,对通电电极(例如喷淋头)施加高频RF(HFRF)偏压)下,使包含一种或更多种有机硅化合物和一种或更多种氧化气体的界面气体混合物通过气体分布板(例如喷淋头),流至衬底表面,以沉积碳含量小于约3原子%的氧化硅界面层;然后在将过渡层沉积在所述界面层上的同时,提高所述一种或更多种有机硅化合物的流率;然后流入最终气体混合物,以沉积碳含量为至少10原子%的掺杂碳的氧化硅层。本文所述的改变工艺条件实质上是在处理过程中将所述通电电极的DC偏压的变化减小到小于60伏特。
在另一种实施方式中,沉积有机硅酸盐电介质层的方法包括:在提高所述一种或更多种有机硅化合物(例如OMCTS、TMCTS)的流率的同时,增大低频RF(LFRF)功率,以在其间沉积所述过渡层。在一个方面,LFRF功率以约15-45W/sec的递增速率增大。在另一个方面,有机硅化合物是八甲基环四硅氧烷(OMCTS),并且OMCTS的流率是以约300-5000mg/min/sec的递增速率提高。
在另一种实施方式中,沉积有机硅酸盐电介质层的方法包括:在包括对气体分布板施加的HFRF偏压的第一沉积条件下,使包含一定流率的八甲基环四硅氧烷(OMCTS)和一定流率的氧气(OMCTS∶O2的摩尔流率比小于约0.1)的界面气体混合物通过所述气体分布板流至衬底表面,以沉积碳含量小于约1原子%的氧化硅界面层;然后在以约15-45W/sec的递增速率增大对所述气体分布板施加的LFRF功率的同时,以约300-5000mg/min/sec的递增速率提高OMCTS的流率,以在所述界面层上沉积过渡层,其中所述气体分布板的DC偏压变化小于60伏特;然后流入最终气体混合物,以沉积碳含量为至少10原子%的掺杂碳的氧化硅层。
附图说明
为了能够详细理解本发明的上述特点,以下通过参考附图所示的实施方式对本发明进行更具体的描述。然而应当注意到,附图仅说明了本发明的典型实施方式,因而不应看作是对其范围的限制,本发明可容许其他等同有效的实施方式。
图1为示出了根据本发明的一种实施方式的第一种方法的工艺流程图;
图2为根据本发明的实施方式形成的有机硅酸盐电介质层的剖面图;
图3为可用于实施本发明的实施方式的示例性处理室的剖面图;
图4为示出了根据本发明的另一种实施方式的第二种方法的工艺流程图;
图5为示出了根据本发明的另一种实施方式的第三种方法的工艺流程图;
图6示出了粘附能(J/m2)作为OMCTS∶O2的摩尔流率比的函数的关系;
图7示出了OMCTS∶O2的摩尔流率比的提高增大了沉积层的碳含量;
图8为表明在本发明的一种实施方式中得到的DC偏压变化小于30伏特的DC偏压曲线。
发明详述
本发明的实施方式提供了在不存在电弧放电的条件下沉积对下方的衬底、含碳氧化硅层和碳化硅层具有高粘附强度的有机硅酸盐电介质层。通常,在沉积有机硅电介质层的过程中改变一种或多种工艺条件,以使对衬底的等离子体致损坏(PID)最小化。
在一种实施方式中,沉积具有高粘附强度的有机硅酸盐电介质层的方法包括:在将有机硅电介质层沉积在设置在处理室中的衬底上时,改变处理室中的处理气体的组成,以使对衬底的PID最小化。在沉积过程中改变处理气体的组成可以提供具有经组成改性的初始层(即,界面层或起始层)的有机硅酸盐电介质层,从而提供对下方衬底的良好粘附性。
图1为示出了根据本发明的第一种实施方式沉积有机硅酸盐电介质层的方法的工艺流程图。在步骤101中,将衬底定位在能够进行PECVD的处理室中的衬底支座上。在步骤103中,将组成包括一种或更多种有机硅化合物和一种或更多种氧化气体的界面气体混合物通过气体分布板(例如喷淋头)引入处理室。在步骤105中,对电极(例如所述喷淋头)施加高频射频(HFRF)功率,从而在处理室中提供等离子体处理条件。在HFRF的存在下,界面气体混合物在处理室中反应,以沉积与下方衬底牢固粘附的界面层,所述界面层包括碳含量小于3原子%、优选小于1原子%(不包括氢)的氧化硅层。在步骤107中,在HFRF功率的存在下,以约300-5000mg/min/sec的递增速率提高所述一种或更多种有机硅化合物的流率,以沉积过渡层,直至得到预定的最终气体混合物。为了避免PID,进行流率递增速率条件,以使气体分布板的DC偏压变化小于60伏特,优选小于30伏特。在得到预定的最终气体混合物之后,在HFRF功率的存在下,组成包括所述一种或更多种有机硅化合物的最终气体混合物在处理室中反应,以沉积包括碳含量为至少10原子%的掺杂碳的氧化硅层的最终层。在步骤111中,终止HFRF功率。在HFRF功率终止过程中,例如通过不开启室节流阀来保持室压力。
图2示意性地示出了根据本发明的实施方式形成的有机硅酸盐电介质层的剖面图。有机硅酸盐电介质层210被沉积在下方层(例如阻挡层)220上,该下方层位于设置在能够进行PECVD的处理室中的衬底的表面。形成包含一定流率的一种或更多种有机硅化合物的界面气体混合物的等离子体,以沉积碳含量小于3原子%、优选小于1原子%并且与下方层220牢固粘附的氧化硅界面层230,如以上关于图1的步骤103和105所述。界面层230被沉积至约5-100、优选约20-60的厚度。在沉积界面层230之后,将所述一种或更多种有机硅化合物的流率逐步增加至预定的最终气体混合物,以使气体分布板的DC偏压的变化小于60伏特,从而避免PID。在逐步增加所述一种或更多种有机硅化合物的流率的同时,将过渡层240沉积在界面层230上,如以上关于图1的步骤107所述。随着沉积进行,碳浓度增大,同时气体混合物的组成在沉积过渡层的过程中变化直至得到最终气体混合物。过渡层240被沉积至约10-300、优选约100-200的厚度。在达到最终气体混合物组成之后,形成包含一定流率的一种或更多种有机硅化合物的最终气体混合物的等离子体,以沉积碳含量为至少约10原子%的掺杂碳的氧化硅层250,直至期望的厚度,如上关于图1的步骤109所述。优选地,掺杂碳的氧化硅层250包含的碳浓度范围为约10-40原子%,更优选约20-30原子%。掺杂碳的氧化硅层250被沉积至约200-10000的厚度,直到HFRF功率在步骤111中终止。通过膜结构的元素分析确定沉积层的碳含量。碳含量由沉积膜中的碳原子百分比表示,所述百分比不考虑难以定量的氢原子。例如,对于具有平均一个硅原子、一个氧原子、一个碳原子和两个氢原子的膜,其碳含量为20原子%(一个碳原子/总共五个原子),或者,碳含量为33原子%(除氢原子之外)(一个碳原子/总共三个原子)。
图3示出了用于沉积掺杂碳的氧化硅层的化学气相沉积(CVD)室300的剖面示意图。此图是以应用材料公司目前制造的Producer室的特征为基础。ProducerCVD室(200mm或300mm)具有两个独立的处理区,可用于沉积掺杂碳的硅氧化物和其它材料。具有两个独立处理区的室在美国专利No.5855681(通过引用结合在本文中)中有所描述。
室300具有限定独立处理区318、320的室体302。每个处理区318、320具有支座328,用于在室300中支撑衬底(未示出)。支座328通常包括加热元件(未示出)。优选地,支座328通过柱杆326可移动地设置在每个处理区318、320中,柱杆326延伸通过室体302的底部,其与驱动系统303相连接。支座328内部优选具有可移动的提升销(未示出),从而与衬底的下表面接合。提升销与提升机构(未示出)结合,以在处理前接收衬底,或在沉积后提升衬底以转移至下一个工作台。
每个处理区318、320还优选包括穿过室盖304设置的气体分布组件308,以将气体输送至处理区318、320中。每个处理区的气体分布组件308通常包括穿过歧管348的进气通道340,以将来自气体分布歧管319的气体输送通过阻挡板346然后通过喷淋头342。喷淋头342包括多个喷嘴(未示出),在处理过程中,气体混合物通过这些喷嘴喷射。RF(射频)源325向喷淋头342提供偏压,以促进在喷淋头与支座328之间产生等离子体。在等离子体增强化学气相沉积工艺中,支座328可以作为在室体302内产生RF偏压的阴极。阴极与电极功率源电耦合,以在沉积室300中产生电容性电场。通常,对阴极施加RF电压,而将室体302电接地。施加至支座328的功率生成了以衬底上表面的负电压形式的衬底偏压。此负电压用于将室300中形成的等离子体的离子吸引到衬底的上表面。电容性电场形成了偏压,该偏压加速感应形成的等离子体物质朝向衬底,以使沉积过程中的衬底成膜和清洁过程中的衬底蚀刻具有更垂直定向的各向异性。
在处理过程中,处理气体在整个衬底表面沿径向均匀分布。通过对作为通电电极的喷淋头342施加RF功率源325的RF能量,由一种或更多种处理气体或气体混合物形成等离子体。当衬底暴露于等离子体并且在其中提供反应性气体时,发生膜的沉积。室壁312通常接地。RF功率源325可以向喷淋头346供给单频或混频RF信号,以促进被引入处理区318、320的任何气体的分解。
系统控制器334控制各个部件(例如RF功率源325、驱动系统303、提升机构、气体分布歧管319)的功能以及其它相关的室功能和/或处理功能。系统控制器334执行存储在存储器338(在优选实施方式中为硬盘驱动器)的系统控制软件,并可包括模拟和数字输入/输出板、界面板和步进电动机控制器板。通常使用光传感器和/或磁传感器来移动和确定可移动机械组件的位置。
上述对CVD系统的描述主要用于说明性目的,也可以采用其它等离子体处理室来实施本发明。
图4为示出了可使用如图3所示的处理室来进行的本发明的第二种实施方式的工艺流程图。在图4所示的实施方式中,引入了在沉积期间提供LFRF功率的附加步骤,从而调节有机硅酸盐电介质层的应力。本工艺开始于步骤401,将衬底定位在能够进行PECVD的处理室中的衬底支座上。在步骤403中,通过喷淋头将组成包括一定流率的一种或更多种有机硅化合物和一定流率的一种或更多种氧化气体的界面气体混合物引入室中。在步骤405中,对喷淋头施加HFRF功率,以在室中提供等离子体处理条件。在施加于喷淋头的HFRF的存在下,界面气体混合物在室中反应,以沉积与下方衬底牢固粘附的界面层,所述界面层包括碳含量小于3原子%、优选小于1原子%的氧化硅层。在步骤407中,以约300-5000mg/min/sec的递增速率提高所述一种或更多种有机硅化合物的流率,直至得到预定的最终气体混合物。在HFRF的存在下提高所述一种或更多种有机硅化合物的流率,而同时在步骤409将LFRF功率从约0W的初始设定值提高到在步骤411中沉积最终层时使用的最终设定值。
改变工艺的沉积条件(例如,气体混合物组成、RF频率和功率),以确保喷淋头的DC偏压的变化小于60伏特,从而避免PID。LFRF功率的递增速率优选为约15-45W/sec。在步骤411得到预定的最终气体混合物之后,在HFRF和LFRF功率的存在下,最终气体混合物在室中反应,以沉积包括碳含量为至少10原子%的掺杂碳的氧化硅层的最终层。在此步骤中,LFRF功率的最终设定值可为约80-200W,优选小于约160W,更优选约125W。在步骤413中,在将有机硅酸盐电介质层沉积至期望厚度之后,终止HFRF和LFRF功率。在HFRF和LFRF功率终止时保持室压力。
可选地,步骤105-111和步骤403-411包括:在沉积过程中,在处理室中,改变衬底与气体歧管(例如喷淋头或气体分布板)之间的距离。在RF功率的存在下改变气体歧管与衬底之间的体积更全面地描述在2003年8月20日提交的美国专利申请No.10/645675(通过引用结合在本文中)中。
沉积有机硅酸盐层的前驱体和处理条件
在本文描述的任何实施方式中,有机硅酸盐电介质层是由包含有机硅化合物的处理气体混合物沉积的。有机硅酸盐层可用作电介质层。电介质层可在器件内的不同层使用。例如,电介质层可用作前金属电介质层、金属间电介质层和栅极电介质层。有机硅酸盐层优选为低k电介质层,即其介电常数小于约3.0。
各种处理气体混合物可用于沉积有机硅酸盐电介质层,下面提供了这样的气体混合物的非限制性实例。通常,气体混合物包含一种或更多种有机硅化合物(例如,第一和第二有机硅化合物)、载气和氧化气体。不应对这些组分进行限制性解释,因为气体混合物还可以包含其它组分,例如烃(如脂族烃)。
本文所用术语“有机硅化合物”意指包含有机基团的碳原子的含硅化合物。有机硅化合物可以包括一种或更多种环状有机硅化合物、一种或更多种脂族有机硅化合物,或其组合。某些示例性的有机硅化合物包括四甲基环四硅氧烷(TMCTS)、八甲基环四硅氧烷(OMCTS)、五甲基环五硅氧烷、六甲基环三硅氧烷、二乙氧基甲基硅烷(DEMS)、二甲基二硅氧烷、四硅烷-2,6-二氧-4,8-二亚甲基、四甲基二硅氧烷、六甲基二硅氧烷(HMDS)、1,3-二(硅烷亚甲基)二硅氧烷、二(1-甲基二硅氧烷基)甲烷、二(1-甲基二硅氧烷基)丙烷、六甲氧基二硅氧烷(HMDOS)、二甲基二甲氧基硅烷(DMDMOS)和二甲氧基甲基乙烯基硅烷(DMMVS),或其衍生物。可以以约100-3500sccm、优选约500-3000sccm的流率将所述一种或更多种有机硅化合物引入处理室。
气体混合物可选地包含一种或更多种载气。通常,一种或更多种载气与所述一种或更多种有机硅混合物一起被引入处理室。可以使用的载气的实例包括氦、氩、二氧化碳及其组合。部分地依赖于室内部尺寸,可以以小于约20000sccm的流率将所述一种或更多种载气引入处理室。优选地,载气流率为约500-1500sccm,更优选约1000sccm。在某些工艺中,在引入反应性处理气体之前,使例如氦或氩的惰性气体进入处理室,以稳定室中的压力。
气体混合物还包含一种或更多种氧化气体。合适的氧化气体包括氧(O2)、臭氧(O3)、氧化亚氮(N2O)、一氧化碳(CO)、二氧化碳(CO2)及其组合。部分地依赖于室内部尺寸,氧化气体的流率可为约100-3000sccm。通常,氧化气体的流率为约100-1000sccm。氧或含氧混合物可在进入沉积室之前在微波室中发生解离,和/或在处理室内通过对处理气体施加的RF功率发生解离。
通常,在沉积期间,通过如图3所示使用RF功率源325对喷淋头施加的RF能量,在室中邻近衬底处形成受控等离子体。或者,可对衬底支座提供RF功率。可以使用高频RF(HFRF)功率及低频RF(LFRF)功率(例如,双频RF)、恒定RF、脉冲RF或者任何其它已知的或待发现的等离子体产生技术来生成等离子体。RF功率源325可以供给约5-300MHz的单频HFRF。此外,RF功率源还可供给约300Hz-1000kHz的单频LFRF,从而供给混频(HFRF和LFRF),以促进被引入处理室的反应性物质分解。RF功率可以是周期性的或脉冲的,以减少对衬底的加热并使沉积膜的孔隙率更大。合适的HFRF功率可为约10-5000W,优选约200-800W。合适的LFRF功率可为约0-5000W,优选约0-200W。
在沉积期间,衬底被保持在约-20-500℃的温度,优选约100-450℃。沉积压力通常为约1-20Torr,优选约4-7Torr。沉积速率通常为约2000-20000/min。
图5为可使用如图3所示的处理室来进行的本发明的第三种实施方式的工艺流程图。在图5所示的实施方式中,按照图4所述的方法沉积有机硅酸盐电介质层,只是将OMCTS用作有机硅化合物,氧用作氧化气体并且氦用作载气。该工艺开始于步骤501,将衬底定位在能够进行PECVD的处理室中的衬底支座上。在步骤503中,通过气体分布歧管将OMCTS∶O2摩尔流率比为约0.05-0.1的界面气体混合物以及氦引入处理室。在步骤505中,启动HFRF功率并对气体分布歧管施加,以在处理室中提供等离子体处理条件。在HFRF的存在下,界面气体混合物在室中反应,以沉积包括碳含量小于1原子%的氧化硅层的界面层。该界面层与下方衬底牢固粘附。在步骤507中,以约300-5000mg/min/sec的递增速率提高OMCTS的流率,直至达到预定的最终设定的OMCTS流率值。在HFRF的存在下提高OMCTS的流率,而同时在步骤509将LFRF功率从约0W的初始设定值提高到在步骤511中沉积最终层时使用的最终设定值。
改变工艺的沉积条件(例如,气体混合物组成、RF频率和功率),以确保气体分布歧管的DC偏压的变化小于60伏特,从而避免PID。LFRF功率的递增速率优选为约15-45W/sec。在步骤511达到预定的最终设定的OMCTS流率值之后,在HFRF和LFRF功率的存在下,组成包括以最终设定流率值的OMCTS的最终气体混合物在室中反应,以沉积包括碳含量为至少10原子%的掺杂碳的氧化硅层的最终层。在此步骤中,LFRF功率的最终设定值可为约80-200W,优选小于约160W,更优选约125W。载气(例如氦)的流率优选不变以减小DC偏压的变化,但如果DC偏压的变化小于60V,则载气流率可以改变。在步骤513中,在将有机硅酸盐电介质层沉积至期望厚度之后,终止HFRF和LFRF功率。在HFRF和LFRF功率终止时保持室压力。
低k有机硅酸盐电介质层对下方的衬底或阻挡层的粘附性取决于界面层对下方层的粘附强度。为了得到具有高粘附强度的界面层,界面层应当富含氧化物,并具有极少量或不存在C-H或-CH3端键。换言之,界面层包含的Si-CH3或C-H键与Si-O键的比例应当小于0.001。-CH3端键的抑制依赖于界面层沉积时的气体混合物组成。特别地,可以将有机硅前驱体与氧化气体的摩尔流率之比改变为预先确定足够的比例,从而沉积具有最少-CH3端键和高粘附能的界面层。
图6示出了粘附能(J/m2)作为OMCTS∶O2的摩尔流率比的函数的关系。使用四点弯曲技术测定粘附能。因此,为了沉积具有良好粘附强度的低k有机硅酸盐电介质层,第一气体混合物的第一组成包括OMCTS和氧,OMCTS与O2的摩尔流率比应当小于约0.15,优选小于约0.10,相对应的OMCTS与O2的流率比小于约2.0 OMCTS(mg/min)/O2(sccm),优选小于约1.3 OMCTS(mg/min)/O2(sccm)。图7示出了Si-CH3与Si-O键的比例以及OMCTS与O2的摩尔流率比之间的关系。如图5的方法的步骤503和505所述,保持OMCTS∶O2摩尔流率比小于0.1,可以提供碳含量小于1原子%的有机硅酸盐电介质层的界面层。
在其它实施方式中,除了在沉积有机硅酸盐电介质层的过程中改变气体混合物的组成和LFRF以外,在沉积界面层之前(即,在图1的步骤103之前),优选将HFRF功率从0W受控递增至用于沉积界面层的初始设定值(例如,约500W)。递增速率可为小于约300W/sec,优选小于约200W/sec,更优选小于约100W/sec。在另一种实施方式中,RF功率还可以在开始沉积初始层之后递减,从而降低初始层的沉积速率,即初始层的厚度。
在其它实施方式中,在沉积界面层之前,优选将惰性气体和氧化气体的流率稳定在初始设定值(例如,He为1000sccm,O2为700sccm),从而避免处理气体流率不稳定。在另一种实施方式中,可以以约100-200mg/min的流率将所述一种或更多种有机硅酸盐的前驱体气体引入处理室,从而准备好液体输送线以及避免流率不稳定。在沉积期间,有机硅酸盐前驱体气体流率可以以约200-5000mg/min/sec、优选约300-600mg/min/scc的递增速率提高,直至达到用于随后沉积有机硅酸盐电介质层的最终层的最终设定值,从而进一步避免流率不稳定和对衬底的潜在PID损坏。
按上述方法,将处理气体逐步引入处理室,并以特定递增或递减速率的可控方式改变其值,以及可选地改变RF功率,不仅提供了对下方衬底具有增强的粘附强度的电介质层,而且改善了用于使对衬底的潜在PID损坏最小化的等离子体的稳定性和均匀性。
在膜沉积之后,可将有机硅酸盐电介质层后处理,例如,用热、电子束和UV曝光固化。层的后处理为膜网络供给能量,以挥发和去除膜网络中的至少一部分有机基团(例如有机环基),从而得到具有低介电常数的孔隙率更大的膜网络。
实施例
按照以上图5所述的实施方式将有机硅酸盐电介质层沉积在衬底上。在可从加利福尼亚,Santa Clara的应用材料公司获得的PRODUCER系统上使用PECVD室(即,CVD室)沉积这些膜。在沉积过程中,室压力保持在约4.5Torr,衬底温度保持在约350℃。
将衬底定位在设置在处理室中的衬底支座上。将用于界面层的含有组成为1000sccm的氦和700sccm的氧的惰性气体的气体混合物引入处理室,并在启动HFRF功率前稳定流率。然后,对喷淋头施加约500W的HFRF功率,以形成组成包括流率为约700mg/min的OMCTS的界面处理气体混合物的等离子体,并沉积碳含量小于约1原子%的氧化硅层。在启动HFRF功率约2秒之后,以约600mg/min/sec的递增速率提高OMCTS的流率,同时以约30W/sec的递增速率提高LFRF功率。此外,以约5000sccm/sec的递减速率降低O2的流率。
由于处理参数改变,包含浓度升高的碳的过渡层被沉积在界面层上。在达到最终设定值后,对气体分布歧管施加约500W的HFRF功率和约125W的LFRF功率,以形成组成包括流率约为2700mg/min的OMCTS的最终气体混合物的等离子体,从而开始将掺杂碳的氧化硅层沉积在过渡层上,掺杂碳的氧化硅层的碳含量为约20原子%(除氢原子以外)。最终气体混合物的组成还包括900sccm的氦和160sccm的氧。最终HFRF功率为500W,最终LFRF功率为125W。在有机硅酸盐电介质层达到期望厚度之后,终止RF功率(HFRF和LFRF)以停止进一步沉积。在RF功率终止之后,开启室节流阀,以使处理气体混合物被泵出处理室。
可以对上述实施例进行许多变化。例如,可以使用其它有机硅前驱体、氧化气体和惰性气体。此外,可以使用不同的流率和/或递增速率。在一个实施例中,可以使用TMCTS代替OMCTS作为有机硅前驱体,并且可在以150sccm/min的速率提高TMCTS流率的同时沉积过渡层。在另一个实施例中,有机硅前驱体可以包括一定流率的三甲基硅烷以及一定流率的OMCTS。在另一个实施例中,可以使用HFRF和LFRF(即LFRF值非零)来沉积界面层。沉积电介质层的时间可为0.5-5秒。
图8示出了实施例的工艺的喷淋头的数条DC偏压曲线802与其中工艺参数不渐变的相同工艺的喷淋头的DC偏压曲线801的比较。图8表明,当工艺条件突然改变时,与145伏特的DC偏压变化相比,本发明的工艺的喷淋头的DC偏压变化令人惊讶地明显减小,仅为小于30伏特。
尽管不与理论结合,但可以认为,气体分布歧管的DC偏压的变化如上述小于60伏特,可使等离子体更稳定,并且明显和实质性地减少衬底损坏。
虽然上述针对本发明的实施方式,但是在不脱离本发明的基本范围的前提下,可以设计本发明的其它和进一步的实施方式,而且本发明的范围由权利要求确定。
Claims (24)
1.一种沉积有机硅酸盐电介质层的方法,包括:
将衬底定位在具有通电电极的处理室中;
将界面气体混合物流入所述处理室,所述界面气体混合物包含一种或更多种有机硅化合物和一种或更多种氧化气体;
通过对所述通电电极施加高频射频功率,将氧化硅层沉积在所述衬底上,所述氧化硅层的碳浓度小于3原子%;
在将过渡层沉积在所述氧化硅层上的同时,递增所述一种或更多种有机硅化合物的流率,直至得到最终气体混合物,其中所述通电电极的DC偏压的变化小于60伏特;
流入所述最终气体混合物,以在所述过渡层上沉积掺杂碳的氧化硅层,所述掺杂碳的氧化硅层的碳浓度为至少10原子%;以及
终止所述高频射频功率。
2.如权利要求1的方法,其中所述氧化硅层的碳浓度小于1原子%。
3.如权利要求1的方法,其中所述掺杂碳的氧化硅层的碳浓度大于20原子%。
4.如权利要求1的方法,其中所述递增所述一种或更多种有机硅化合物的流率包括以小于约1000mg/min/sec的递增速率逐步提高所述一种或更多种有机硅化合物的流率。
5.如权利要求1的方法,其中所述递增所述一种或更多种有机硅化合物的流率包括以约300-900mg/min/sec的递增速率逐步提高所述一种或更多种有机硅化合物的流率。
6.如权利要求1的方法,还包括在沉积所述掺杂碳的氧化硅层的同时对所述气体分布歧管施加低频射频功率。
7.如权利要求6的方法,还包括在沉积所述过渡层的同时以约15-45W/sec的递增速率递增所述低频射频功率。
8.如权利要求1的方法,其中所述一种或更多种有机硅化合物包含八甲基环四硅氧烷。
9.如权利要求8的方法,其中所述一种或更多种氧化气体为氧气,并且其中所述界面气体混合物包含八甲基环四硅氧烷和氧气,八甲基环四硅氧烷∶氧气摩尔流率比小于约0.1。
10.如权利要求1的方法,其中所述氧化硅层的Si-CH3或C-H键与Si-O键之比小于0.001。
11.如权利要求1的方法,其中所述氧化硅层是以约80-125W的最终低频射频功率沉积的。
12.如权利要求1的方法,其中所述衬底与气体歧管之间的距离在施加高频射频功率时是变化的。
13.一种沉积有机硅酸盐电介质层的方法,包括:
将衬底定位在具有气体分布歧管的处理室中;
将界面气体混合物流入所述处理室,所述界面气体混合物包含氦、八甲基环四硅氧烷和一种或更多种氧化气体;
通过对所述气体分布歧管施加高频射频功率,将氧化硅层沉积在所述衬底上,所述氧化硅层的碳浓度小于3原子%;
在将过渡层沉积在所述界面层上的同时,以约300-900mg/min/sec的递增速率提高八甲基环四硅氧烷的流率,直至得到最终气体混合物;
流入所述最终气体混合物,以在所述过渡层上沉积掺杂碳的氧化硅层,所述掺杂碳的氧化硅层的碳浓度为至少10原子%;以及
终止所述HFRF功率。
14.如权利要求13的方法,其中所述气体分布歧管的DC偏压的变化小于30伏特。
15.如权利要求13的方法,其中所述氧化硅层的碳浓度小于1原子%。
16.如权利要求15的方法,其中所述掺杂碳的氧化硅层的碳浓度大于20原子%。
17.如权利要求16的方法,其中所述递增所述一种或更多种有机硅化合物的流率包括以600mg/min/sec的递增速率提高八甲基环四硅氧烷的流率。
18.如权利要求13的方法,还包括对所述气体分布歧管施加低频射频功率。
19.如权利要求18的方法,还包括在沉积所述过渡层的同时以约15-45W/sec的递增速率递增所述低频射频功率。
20.如权利要求19的方法,还包括在沉积所述掺杂碳的氧化硅层之后终止所述低频射频功率。
21.如权利要求13的方法,其中所述界面气体混合物包含1000sccm的氦、700mg/min的八甲基环四硅氧烷和700sccm的氧。
22.如权利要求21的方法,其中所述最终气体混合物包含900sccm的氦、2700mg/min的八甲基环四硅氧烷和160sccm的氧。
23.如权利要求22的方法,其中所述高频射频功率为约200-800W。
24.如权利要求13的方法,其中所述衬底与气体歧管之间的距离在施加高频射频功率时是变化的。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64489905P | 2005-01-19 | 2005-01-19 | |
US60/644,899 | 2005-01-19 | ||
US11/142,124 US7259111B2 (en) | 2005-01-19 | 2005-06-01 | Interface engineering to improve adhesion between low k stacks |
US11/142,124 | 2005-06-01 | ||
PCT/US2006/001741 WO2006078719A2 (en) | 2005-01-19 | 2006-01-19 | Interface engineering to improve adhesion between low k stacks |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101107383A true CN101107383A (zh) | 2008-01-16 |
CN100594259C CN100594259C (zh) | 2010-03-17 |
Family
ID=36644885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200680002599A Expired - Fee Related CN100594259C (zh) | 2005-01-19 | 2006-01-19 | 改善低k叠层之间粘附性的界面工程 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7259111B2 (zh) |
KR (1) | KR100971825B1 (zh) |
CN (1) | CN100594259C (zh) |
WO (1) | WO2006078719A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101996878B (zh) * | 2009-08-11 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | 沉积低介电常数绝缘材料层的方法 |
CN109642318A (zh) * | 2016-04-08 | 2019-04-16 | Sio2医药产品公司 | 用于利用移动气体入口施加pecvd润滑层的方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6913992B2 (en) | 2003-03-07 | 2005-07-05 | Applied Materials, Inc. | Method of modifying interlayer adhesion |
US20070077778A1 (en) * | 2005-10-04 | 2007-04-05 | The Boc Group, Inc. | Method of forming low dielectric constant layer |
US7297376B1 (en) * | 2006-07-07 | 2007-11-20 | Applied Materials, Inc. | Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers |
US7598183B2 (en) * | 2006-09-20 | 2009-10-06 | Applied Materials, Inc. | Bi-layer capping of low-K dielectric films |
US8900695B2 (en) * | 2007-02-23 | 2014-12-02 | Applied Microstructures, Inc. | Durable conformal wear-resistant carbon-doped metal oxide-comprising coating |
US20100068489A1 (en) * | 2007-02-23 | 2010-03-18 | Applied Microstructures, Inc. | Wear-resistant, carbon-doped metal oxide coatings for MEMS and nanoimprint lithography |
US20100015816A1 (en) * | 2008-07-15 | 2010-01-21 | Kelvin Chan | Methods to promote adhesion between barrier layer and porous low-k film deposited from multiple liquid precursors |
US20110068332A1 (en) * | 2008-08-04 | 2011-03-24 | The Trustees Of Princeton University | Hybrid Dielectric Material for Thin Film Transistors |
CN102113120B (zh) * | 2008-08-04 | 2014-10-22 | 普林斯顿大学理事会 | 用于薄膜晶体管的杂化的介电材料 |
US20100087062A1 (en) * | 2008-10-06 | 2010-04-08 | Applied Materials, Inc. | High temperature bd development for memory applications |
US8349746B2 (en) * | 2010-02-23 | 2013-01-08 | Applied Materials, Inc. | Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure |
US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
US10832904B2 (en) | 2012-06-12 | 2020-11-10 | Lam Research Corporation | Remote plasma based deposition of oxygen doped silicon carbide films |
WO2014143337A1 (en) * | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Adhesion layer to minimize dilelectric constant increase with good adhesion strength in a pecvd process |
US10297442B2 (en) * | 2013-05-31 | 2019-05-21 | Lam Research Corporation | Remote plasma based deposition of graded or multi-layered silicon carbide film |
US9853133B2 (en) * | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
JP6347548B2 (ja) | 2014-09-08 | 2018-06-27 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
US10002787B2 (en) | 2016-11-23 | 2018-06-19 | Lam Research Corporation | Staircase encapsulation in 3D NAND fabrication |
US10109523B2 (en) | 2016-11-29 | 2018-10-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of cleaning wafer after CMP |
CN110235248B (zh) | 2017-04-27 | 2024-03-26 | 应用材料公司 | 用于3d nand应用的低介电常数氧化物和低电阻op堆叠 |
US10840087B2 (en) | 2018-07-20 | 2020-11-17 | Lam Research Corporation | Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films |
CN113195786A (zh) | 2018-10-19 | 2021-07-30 | 朗姆研究公司 | 用于间隙填充的远程氢等离子体暴露以及掺杂或未掺杂硅碳化物沉积 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5129359A (en) * | 1988-11-15 | 1992-07-14 | Canon Kabushiki Kaisha | Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate |
JP2746289B2 (ja) * | 1989-09-09 | 1998-05-06 | 忠弘 大見 | 素子の作製方法並びに半導体素子およびその作製方法 |
US5926689A (en) * | 1995-12-19 | 1999-07-20 | International Business Machines Corporation | Process for reducing circuit damage during PECVD in single wafer PECVD system |
US6136654A (en) * | 1996-06-07 | 2000-10-24 | Texas Instruments Incorporated | Method of forming thin silicon nitride or silicon oxynitride gate dielectrics |
US6235650B1 (en) * | 1997-12-29 | 2001-05-22 | Vanguard International Semiconductor Corporation | Method for improved semiconductor device reliability |
US6303523B2 (en) * | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6340435B1 (en) | 1998-02-11 | 2002-01-22 | Applied Materials, Inc. | Integrated low K dielectrics and etch stops |
US6251770B1 (en) | 1999-06-30 | 2001-06-26 | Lam Research Corp. | Dual-damascene dielectric structures and methods for making the same |
US6521302B1 (en) | 2000-09-26 | 2003-02-18 | Applied Materials, Inc. | Method of reducing plasma-induced damage |
US6500773B1 (en) * | 2000-11-27 | 2002-12-31 | Applied Materials, Inc. | Method of depositing organosilicate layers |
US6583048B2 (en) * | 2001-01-17 | 2003-06-24 | Air Products And Chemicals, Inc. | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
US6518646B1 (en) | 2001-03-29 | 2003-02-11 | Advanced Micro Devices, Inc. | Semiconductor device with variable composition low-k inter-layer dielectric and method of making |
US6602800B2 (en) | 2001-05-09 | 2003-08-05 | Asm Japan K.K. | Apparatus for forming thin film on semiconductor substrate by plasma reaction |
US6570256B2 (en) | 2001-07-20 | 2003-05-27 | International Business Machines Corporation | Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates |
US6887780B2 (en) | 2001-08-31 | 2005-05-03 | Intel Corporation | Concentration graded carbon doped oxide |
US6911403B2 (en) | 2003-08-20 | 2005-06-28 | Applied Materials, Inc. | Methods of reducing plasma-induced damage for advanced plasma CVD dielectrics |
-
2005
- 2005-06-01 US US11/142,124 patent/US7259111B2/en active Active
-
2006
- 2006-01-19 CN CN200680002599A patent/CN100594259C/zh not_active Expired - Fee Related
- 2006-01-19 WO PCT/US2006/001741 patent/WO2006078719A2/en active Application Filing
- 2006-01-19 KR KR1020077019038A patent/KR100971825B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101996878B (zh) * | 2009-08-11 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | 沉积低介电常数绝缘材料层的方法 |
CN109642318A (zh) * | 2016-04-08 | 2019-04-16 | Sio2医药产品公司 | 用于利用移动气体入口施加pecvd润滑层的方法 |
Also Published As
Publication number | Publication date |
---|---|
US7259111B2 (en) | 2007-08-21 |
WO2006078719A2 (en) | 2006-07-27 |
WO2006078719A3 (en) | 2006-10-19 |
US20060160376A1 (en) | 2006-07-20 |
KR20070096035A (ko) | 2007-10-01 |
CN100594259C (zh) | 2010-03-17 |
KR100971825B1 (ko) | 2010-07-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100594259C (zh) | 改善低k叠层之间粘附性的界面工程 | |
CN101109074B (zh) | 在硅和有机前驱物的pecvd工艺中减少气相反应以沉积无缺陷起始层方法 | |
US9018108B2 (en) | Low shrinkage dielectric films | |
KR100453612B1 (ko) | 유전율이 낮은 수소화된 옥시탄화규소 막의 제조방법 | |
JP4842251B2 (ja) | 下にあるバリア層への多孔性低誘電率膜の接着を促進する手法 | |
KR100497778B1 (ko) | 유도결합 플라즈마 화학증착법 | |
US6787483B1 (en) | Gap fill for high aspect ratio structures | |
CN100400707C (zh) | 用电子束硬化低介电常数膜的方法 | |
US6825130B2 (en) | CVD of porous dielectric materials | |
TW201417179A (zh) | 低成本流動性介電質薄膜 | |
CN103210479A (zh) | 用以降低超低k介电薄膜的黏着层厚度并提高抗破坏性的工艺 | |
CN102460679A (zh) | 硼膜界面工程 | |
TW201411721A (zh) | 用於流動性膜之經改良的緻密化作用 | |
KR100899726B1 (ko) | 디지털 액체 유량계에 의해 낮은 k 유전체 막을 위한개시층을 개선하는 방법 | |
KR20120111738A (ko) | 융통성을 가진 질소/수소 비율을 이용하여 제조된 라디칼에 의한 유전체 필름의 성장 | |
CN103540908A (zh) | 沉积二氧化硅薄膜的方法 | |
CN101316945A (zh) | 低介电常数薄膜的灰化/蚀刻损伤的抵抗性以及整体稳定性的改进方法 | |
US7001854B1 (en) | Hydrogen-based phosphosilicate glass process for gap fill of high aspect ratio structures | |
JP4881153B2 (ja) | 水素化シリコンオキシカーバイド膜の生成方法。 | |
US6436822B1 (en) | Method for making a carbon doped oxide dielectric material | |
US7998536B2 (en) | Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition | |
WO2001001472A1 (en) | Method and apparatus for forming a film on a substrate | |
JP2003530481A (ja) | 無機/有機誘電体フィルムを堆積させるシステム及び方法 | |
CN100541735C (zh) | Sioc低k膜的应力减小 | |
KR20050091780A (ko) | 저-k 유전체 재료의 크랙 한계 및 기계적 특성 개선 방법및 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100317 Termination date: 20150119 |
|
EXPY | Termination of patent right or utility model |