CN101095199A - 具有减少的过编程的高速编程系统 - Google Patents
具有减少的过编程的高速编程系统 Download PDFInfo
- Publication number
- CN101095199A CN101095199A CNA2005800392083A CN200580039208A CN101095199A CN 101095199 A CN101095199 A CN 101095199A CN A2005800392083 A CNA2005800392083 A CN A2005800392083A CN 200580039208 A CN200580039208 A CN 200580039208A CN 101095199 A CN101095199 A CN 101095199A
- Authority
- CN
- China
- Prior art keywords
- memory device
- volatile memory
- programming
- group
- nonvolatile memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 claims abstract description 279
- 238000003860 storage Methods 0.000 claims abstract description 24
- 238000012360 testing method Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 73
- 230000000630 rising effect Effects 0.000 claims description 4
- 238000012795 verification Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 description 65
- 230000008569 process Effects 0.000 description 36
- 238000007667 floating Methods 0.000 description 23
- 238000005516 engineering process Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 230000014509 gene expression Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 241001553178 Arachis glabrata Species 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 235000020232 peanut Nutrition 0.000 description 3
- 235000017060 Arachis glabrata Nutrition 0.000 description 2
- 235000010777 Arachis hypogaea Nutrition 0.000 description 2
- 235000018262 Arachis monticola Nutrition 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Stored Programmes (AREA)
Abstract
Description
Claims (44)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/990,702 US7092290B2 (en) | 2004-11-16 | 2004-11-16 | High speed programming system with reduced over programming |
US10/990,702 | 2004-11-16 | ||
PCT/US2005/039735 WO2006055256A1 (en) | 2004-11-16 | 2005-11-03 | High speed programming system with reduced over programming |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101095199A true CN101095199A (zh) | 2007-12-26 |
CN101095199B CN101095199B (zh) | 2012-01-11 |
Family
ID=35788987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800392083A Active CN101095199B (zh) | 2004-11-16 | 2005-11-03 | 非易失性存储系统和用于编程非易失性存储器的方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7092290B2 (zh) |
EP (1) | EP1812932B1 (zh) |
JP (1) | JP4857278B2 (zh) |
KR (2) | KR100909721B1 (zh) |
CN (1) | CN101095199B (zh) |
AT (1) | ATE492882T1 (zh) |
DE (1) | DE602005025522D1 (zh) |
TW (1) | TWI301981B (zh) |
WO (1) | WO2006055256A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102129886B (zh) * | 2010-01-12 | 2013-07-17 | 中芯国际集成电路制造(上海)有限公司 | 电阻随机存储器的初始化以及设置、复位方法 |
CN103477392A (zh) * | 2011-03-24 | 2013-12-25 | 桑迪士克科技股份有限公司 | 具有减少的验证的改进的编程的非易失性存储器和方法 |
CN102027548B (zh) * | 2008-04-29 | 2014-01-01 | 桑迪士克以色列有限公司 | 具有用于编程、验证和读取的参考电压电平的适应性设置的非易失性多电平存储器 |
CN103971739A (zh) * | 2013-02-04 | 2014-08-06 | 三星电子株式会社 | 包括非易失性存储设备的存储系统及其编程方法 |
CN111261211A (zh) * | 2018-12-03 | 2020-06-09 | 美光科技公司 | 操作存储器的方法及存储器 |
CN112201293A (zh) * | 2020-10-18 | 2021-01-08 | 本征信息技术(上海)有限公司 | 多层单元非易失性存储器的一种编程方法 |
Families Citing this family (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8511558B2 (en) * | 2005-04-12 | 2013-08-20 | Sandisk Il Ltd. | Smartcard power management |
US7564713B2 (en) * | 2005-04-28 | 2009-07-21 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device wherein during data write a potential transferred to each bit line is changed in accordance with program order of program data |
US7230854B2 (en) * | 2005-08-01 | 2007-06-12 | Sandisk Corporation | Method for programming non-volatile memory with self-adjusting maximum program loop |
US20070266296A1 (en) * | 2006-05-15 | 2007-11-15 | Conley Kevin M | Nonvolatile Memory with Convolutional Coding |
US7840875B2 (en) * | 2006-05-15 | 2010-11-23 | Sandisk Corporation | Convolutional coding methods for nonvolatile memory |
KR100771883B1 (ko) | 2006-09-06 | 2007-11-01 | 삼성전자주식회사 | 멀티-레벨 불휘발성 메모리 장치 및 프로그램 방법 |
KR100771882B1 (ko) * | 2006-09-06 | 2007-11-01 | 삼성전자주식회사 | 멀티-레벨 불휘발성 메모리 장치의 프로그램 방법 |
US7606091B2 (en) | 2006-09-12 | 2009-10-20 | Sandisk Corporation | Method for non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage |
US7606077B2 (en) | 2006-09-12 | 2009-10-20 | Sandisk Corporation | Non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage |
EP2074626B1 (en) | 2006-09-12 | 2012-11-28 | SanDisk Technologies Inc. | Non-volatile memory and method for linear estimation of initial programming voltage |
US7599223B2 (en) | 2006-09-12 | 2009-10-06 | Sandisk Corporation | Non-volatile memory with linear estimation of initial programming voltage |
US7453731B2 (en) * | 2006-09-12 | 2008-11-18 | Sandisk Corporation | Method for non-volatile memory with linear estimation of initial programming voltage |
US7818653B2 (en) * | 2006-09-28 | 2010-10-19 | Sandisk Corporation | Methods of soft-input soft-output decoding for nonvolatile memory |
US7805663B2 (en) * | 2006-09-28 | 2010-09-28 | Sandisk Corporation | Methods of adapting operation of nonvolatile memory |
US20080092015A1 (en) * | 2006-09-28 | 2008-04-17 | Yigal Brandman | Nonvolatile memory with adaptive operation |
US7904783B2 (en) * | 2006-09-28 | 2011-03-08 | Sandisk Corporation | Soft-input soft-output decoder for nonvolatile memory |
WO2008045805A1 (en) * | 2006-10-10 | 2008-04-17 | Sandisk Corporation | Variable program voltage increment values in non-volatile memory program operations |
US7474561B2 (en) * | 2006-10-10 | 2009-01-06 | Sandisk Corporation | Variable program voltage increment values in non-volatile memory program operations |
US7450426B2 (en) * | 2006-10-10 | 2008-11-11 | Sandisk Corporation | Systems utilizing variable program voltage increment values in non-volatile memory program operations |
US8001441B2 (en) * | 2006-11-03 | 2011-08-16 | Sandisk Technologies Inc. | Nonvolatile memory with modulated error correction coding |
US7904788B2 (en) * | 2006-11-03 | 2011-03-08 | Sandisk Corporation | Methods of varying read threshold voltage in nonvolatile memory |
US7904780B2 (en) * | 2006-11-03 | 2011-03-08 | Sandisk Corporation | Methods of modulating error correction coding |
US7558109B2 (en) * | 2006-11-03 | 2009-07-07 | Sandisk Corporation | Nonvolatile memory with variable read threshold |
US7697338B2 (en) * | 2006-11-16 | 2010-04-13 | Sandisk Corporation | Systems for controlled boosting in non-volatile memory soft programming |
US7535763B2 (en) * | 2006-11-16 | 2009-05-19 | Sandisk Corporation | Controlled boosting in non-volatile memory soft programming |
JP2008140488A (ja) * | 2006-12-04 | 2008-06-19 | Toshiba Corp | 半導体記憶装置 |
US7570520B2 (en) * | 2006-12-27 | 2009-08-04 | Sandisk Corporation | Non-volatile storage system with initial programming voltage based on trial |
US7551482B2 (en) * | 2006-12-27 | 2009-06-23 | Sandisk Corporation | Method for programming with initial programming voltage based on trial |
US7616495B2 (en) * | 2007-02-20 | 2009-11-10 | Sandisk Corporation | Non-volatile storage apparatus with variable initial program voltage magnitude |
US7656709B2 (en) * | 2007-05-03 | 2010-02-02 | Micron Technology, Inc. | NAND step up voltage switching method |
US7599224B2 (en) * | 2007-07-03 | 2009-10-06 | Sandisk Corporation | Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
US7508715B2 (en) * | 2007-07-03 | 2009-03-24 | Sandisk Corporation | Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
US7978520B2 (en) | 2007-09-27 | 2011-07-12 | Sandisk Corporation | Compensation of non-volatile memory chip non-idealities by program pulse adjustment |
KR101344347B1 (ko) * | 2008-01-16 | 2013-12-24 | 삼성전자주식회사 | 프로그램 시작 전압을 조절하는 불휘발성 메모리 장치,그것의 프로그램 방법, 그리고 그것을 포함하는 메모리시스템 |
US7916544B2 (en) * | 2008-01-25 | 2011-03-29 | Micron Technology, Inc. | Random telegraph signal noise reduction scheme for semiconductor memories |
KR20090120205A (ko) | 2008-05-19 | 2009-11-24 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 동작 방법 |
JP2009301679A (ja) * | 2008-06-17 | 2009-12-24 | Vantel Corp | 不揮発性半導体記憶装置とその書き込み方法 |
US7800956B2 (en) * | 2008-06-27 | 2010-09-21 | Sandisk Corporation | Programming algorithm to reduce disturb with minimal extra time penalty |
US8014209B2 (en) | 2008-07-02 | 2011-09-06 | Sandisk Technologies Inc. | Programming and selectively erasing non-volatile storage |
US8045375B2 (en) | 2008-10-24 | 2011-10-25 | Sandisk Technologies Inc. | Programming non-volatile memory with high resolution variable initial programming pulse |
US8174895B2 (en) * | 2009-12-15 | 2012-05-08 | Sandisk Technologies Inc. | Programming non-volatile storage with fast bit detection and verify skip |
KR101653262B1 (ko) * | 2010-04-12 | 2016-09-02 | 삼성전자주식회사 | 멀티-비트 메모리의 프로그램 방법 및 그것을 이용한 데이터 저장 시스템 |
US8351276B2 (en) | 2010-07-13 | 2013-01-08 | Freescale Semiconductor, Inc. | Soft program of a non-volatile memory block |
JP2011204356A (ja) * | 2011-07-19 | 2011-10-13 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8582381B2 (en) | 2012-02-23 | 2013-11-12 | SanDisk Technologies, Inc. | Temperature based compensation during verify operations for non-volatile storage |
WO2013134890A1 (en) | 2012-03-13 | 2013-09-19 | Micron Technology, Inc. | Nonconsecutive sensing of multilevel memory cells |
US9053819B2 (en) | 2012-07-11 | 2015-06-09 | Sandisk Technologies Inc. | Programming method to tighten threshold voltage width with avoiding program disturb |
US9225356B2 (en) | 2012-11-12 | 2015-12-29 | Freescale Semiconductor, Inc. | Programming a non-volatile memory (NVM) system having error correction code (ECC) |
US8885416B2 (en) | 2013-01-30 | 2014-11-11 | Sandisk Technologies Inc. | Bit line current trip point modulation for reading nonvolatile storage elements |
US9105360B2 (en) * | 2013-03-07 | 2015-08-11 | Seagate Technology Llc | Forming a characterization parameter of a resistive memory element |
KR20150091684A (ko) * | 2014-02-03 | 2015-08-12 | 에스케이하이닉스 주식회사 | 반도체 장치 |
US10014063B2 (en) * | 2015-10-30 | 2018-07-03 | Sandisk Technologies Llc | Smart skip verify mode for programming a memory device |
TWI596477B (zh) * | 2015-12-18 | 2017-08-21 | 群聯電子股份有限公司 | 記憶體管理方法、記憶體控制電路單元及記憶體儲存裝置 |
US11308383B2 (en) | 2016-05-17 | 2022-04-19 | Silicon Storage Technology, Inc. | Deep learning neural network classifier using non-volatile memory array |
US10248499B2 (en) | 2016-06-24 | 2019-04-02 | Sandisk Technologies Llc | Non-volatile storage system using two pass programming with bit error control |
KR102683414B1 (ko) * | 2017-01-26 | 2024-07-10 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그것의 프로그램 방법 |
US10249382B2 (en) * | 2017-08-22 | 2019-04-02 | Sandisk Technologies Llc | Determination of fast to program word lines in non-volatile memory |
US10803943B2 (en) | 2017-11-29 | 2020-10-13 | Silicon Storage Technology, Inc. | Neural network classifier using array of four-gate non-volatile memory cells |
US11087207B2 (en) | 2018-03-14 | 2021-08-10 | Silicon Storage Technology, Inc. | Decoders for analog neural memory in deep learning artificial neural network |
US10748630B2 (en) * | 2017-11-29 | 2020-08-18 | Silicon Storage Technology, Inc. | High precision and highly efficient tuning mechanisms and algorithms for analog neuromorphic memory in artificial neural networks |
US10522226B2 (en) * | 2018-05-01 | 2019-12-31 | Silicon Storage Technology, Inc. | Method and apparatus for high voltage generation for analog neural memory in deep learning artificial neural network |
US10910075B2 (en) | 2018-11-13 | 2021-02-02 | Sandisk Technologies Llc | Programming process combining adaptive verify with normal and slow programming speeds in a memory device |
US11409352B2 (en) | 2019-01-18 | 2022-08-09 | Silicon Storage Technology, Inc. | Power management for an analog neural memory in a deep learning artificial neural network |
US11270763B2 (en) | 2019-01-18 | 2022-03-08 | Silicon Storage Technology, Inc. | Neural network classifier using array of three-gate non-volatile memory cells |
US10748622B2 (en) | 2019-01-21 | 2020-08-18 | Sandisk Technologies Llc | State adaptive predictive programming |
US11023559B2 (en) | 2019-01-25 | 2021-06-01 | Microsemi Soc Corp. | Apparatus and method for combining analog neural net with FPGA routing in a monolithic integrated circuit |
US11270771B2 (en) | 2019-01-29 | 2022-03-08 | Silicon Storage Technology, Inc. | Neural network classifier using array of stacked gate non-volatile memory cells |
US11423979B2 (en) | 2019-04-29 | 2022-08-23 | Silicon Storage Technology, Inc. | Decoding system and physical layout for analog neural memory in deep learning artificial neural network |
US10839928B1 (en) | 2019-05-16 | 2020-11-17 | Sandisk Technologies Llc | Non-volatile memory with countermeasure for over programming |
US11081198B2 (en) | 2019-05-16 | 2021-08-03 | Sandisk Technologies Llc | Non-volatile memory with countermeasure for over programming |
US11049578B1 (en) | 2020-02-19 | 2021-06-29 | Sandisk Technologies Llc | Non-volatile memory with program verify skip |
US11532370B1 (en) | 2021-05-25 | 2022-12-20 | Sandisk Technologies Llc | Non-volatile memory with fast multi-level program verify |
US11557346B2 (en) | 2021-06-02 | 2023-01-17 | Western Digital Technologies, Inc. | Self-adaptive program pulse width for programming 3D NAND memory |
US12094546B2 (en) | 2022-01-31 | 2024-09-17 | Sandisk Technologies Llc | Non-volatile memory with zone based program speed adjustment |
US12051473B2 (en) | 2022-06-28 | 2024-07-30 | Western Digital Technolologies, Inc. | Non-volatile memory with precise programming |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5220531A (en) * | 1991-01-02 | 1993-06-15 | Information Storage Devices, Inc. | Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback |
KR960002006B1 (ko) * | 1991-03-12 | 1996-02-09 | 가부시끼가이샤 도시바 | 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치 |
US5313421A (en) * | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
US5712180A (en) * | 1992-01-14 | 1998-01-27 | Sundisk Corporation | EEPROM with split gate source side injection |
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5412601A (en) * | 1992-08-31 | 1995-05-02 | Nippon Steel Corporation | Non-volatile semiconductor memory device capable of storing multi-value data in each memory cell |
KR0169267B1 (ko) * | 1993-09-21 | 1999-02-01 | 사토 후미오 | 불휘발성 반도체 기억장치 |
JP3476952B2 (ja) * | 1994-03-15 | 2003-12-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP3730272B2 (ja) * | 1994-09-17 | 2005-12-21 | 株式会社東芝 | 不揮発性半導体記憶装置 |
EP0704854B1 (en) * | 1994-09-30 | 1999-12-01 | STMicroelectronics S.r.l. | Memory device having error detection and correction function, and methods for writing and erasing the memory device |
JPH09251782A (ja) * | 1996-03-14 | 1997-09-22 | Fujitsu Ltd | 半導体記憶装置 |
US5712815A (en) * | 1996-04-22 | 1998-01-27 | Advanced Micro Devices, Inc. | Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells |
US5764568A (en) | 1996-10-24 | 1998-06-09 | Micron Quantum Devices, Inc. | Method for performing analog over-program and under-program detection for a multistate memory cell |
AU4996697A (en) | 1996-12-20 | 1998-07-17 | Intel Corporation | Nonvolatile writeable memory with fast programming capability |
JP3481817B2 (ja) * | 1997-04-07 | 2003-12-22 | 株式会社東芝 | 半導体記憶装置 |
JP2000040382A (ja) | 1998-07-23 | 2000-02-08 | Sony Corp | 不揮発性半導体記憶装置およびそのデータ書き込み方法 |
US6151248A (en) * | 1999-06-30 | 2000-11-21 | Sandisk Corporation | Dual floating gate EEPROM cell array with steering gates shared by adjacent cells |
TWI267704B (en) * | 1999-07-02 | 2006-12-01 | Asml Netherlands Bv | Capping layer for EUV optical elements |
KR100322470B1 (ko) * | 1999-07-22 | 2002-02-07 | 윤종용 | 고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법 |
US6301161B1 (en) * | 2000-04-25 | 2001-10-09 | Winbond Electronics Corporation | Programming flash memory analog storage using coarse-and-fine sequence |
JP3940544B2 (ja) * | 2000-04-27 | 2007-07-04 | 株式会社東芝 | 不揮発性半導体メモリのベリファイ方法 |
JP3631463B2 (ja) * | 2001-12-27 | 2005-03-23 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6424566B1 (en) * | 2001-02-08 | 2002-07-23 | Advanced Micro Devices, Inc. | Program reconnaissance to eliminate variations in vt distributions of multi-level cell flash memory designs |
US6738289B2 (en) * | 2001-02-26 | 2004-05-18 | Sandisk Corporation | Non-volatile memory with improved programming and method therefor |
US6493266B1 (en) * | 2001-04-09 | 2002-12-10 | Advanced Micro Devices, Inc. | Soft program and soft program verify of the core cells in flash memory array |
US6532172B2 (en) * | 2001-05-31 | 2003-03-11 | Sandisk Corporation | Steering gate and bit line segmentation in non-volatile memories |
US6535428B2 (en) * | 2001-06-14 | 2003-03-18 | Stmicroelectronics S.R.L. | Sensing circuit for memory cells |
US6522580B2 (en) * | 2001-06-27 | 2003-02-18 | Sandisk Corporation | Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states |
US6529412B1 (en) * | 2002-01-16 | 2003-03-04 | Advanced Micro Devices, Inc. | Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit precharge |
JP4050555B2 (ja) * | 2002-05-29 | 2008-02-20 | 株式会社東芝 | 不揮発性半導体記憶装置およびそのデータ書き込み方法 |
JP4181363B2 (ja) * | 2002-08-29 | 2008-11-12 | スパンション エルエルシー | 不揮発性半導体記憶装置及びデータ書き込み方法 |
JP2004103089A (ja) * | 2002-09-06 | 2004-04-02 | Sharp Corp | 不揮発性半導体記憶装置およびその再書き込み方法 |
-
2004
- 2004-11-16 US US10/990,702 patent/US7092290B2/en active Active
-
2005
- 2005-11-03 WO PCT/US2005/039735 patent/WO2006055256A1/en active Application Filing
- 2005-11-03 EP EP05817284A patent/EP1812932B1/en active Active
- 2005-11-03 KR KR1020097006837A patent/KR100909721B1/ko active IP Right Grant
- 2005-11-03 KR KR1020077011282A patent/KR20070101240A/ko active Application Filing
- 2005-11-03 CN CN2005800392083A patent/CN101095199B/zh active Active
- 2005-11-03 AT AT05817284T patent/ATE492882T1/de not_active IP Right Cessation
- 2005-11-03 JP JP2007541243A patent/JP4857278B2/ja active Active
- 2005-11-03 DE DE602005025522T patent/DE602005025522D1/de active Active
- 2005-11-15 TW TW094140086A patent/TWI301981B/zh not_active IP Right Cessation
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102027548B (zh) * | 2008-04-29 | 2014-01-01 | 桑迪士克以色列有限公司 | 具有用于编程、验证和读取的参考电压电平的适应性设置的非易失性多电平存储器 |
CN102129886B (zh) * | 2010-01-12 | 2013-07-17 | 中芯国际集成电路制造(上海)有限公司 | 电阻随机存储器的初始化以及设置、复位方法 |
CN103477392A (zh) * | 2011-03-24 | 2013-12-25 | 桑迪士克科技股份有限公司 | 具有减少的验证的改进的编程的非易失性存储器和方法 |
CN103477392B (zh) * | 2011-03-24 | 2016-04-06 | 桑迪士克科技股份有限公司 | 具有减少的验证的改进的编程的非易失性存储器和方法 |
CN103971739A (zh) * | 2013-02-04 | 2014-08-06 | 三星电子株式会社 | 包括非易失性存储设备的存储系统及其编程方法 |
CN103971739B (zh) * | 2013-02-04 | 2019-07-16 | 三星电子株式会社 | 包括非易失性存储设备的存储系统及其编程方法 |
CN111261211A (zh) * | 2018-12-03 | 2020-06-09 | 美光科技公司 | 操作存储器的方法及存储器 |
CN111261211B (zh) * | 2018-12-03 | 2024-01-02 | 美光科技公司 | 操作存储器的方法及存储器 |
CN112201293A (zh) * | 2020-10-18 | 2021-01-08 | 本征信息技术(上海)有限公司 | 多层单元非易失性存储器的一种编程方法 |
CN112201293B (zh) * | 2020-10-18 | 2023-12-15 | 本征信息技术(苏州)有限公司 | 多层单元非易失性存储器的一种编程方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2006055256A1 (en) | 2006-05-26 |
EP1812932A1 (en) | 2007-08-01 |
JP2008521153A (ja) | 2008-06-19 |
CN101095199B (zh) | 2012-01-11 |
KR100909721B1 (ko) | 2009-07-29 |
DE602005025522D1 (de) | 2011-02-03 |
ATE492882T1 (de) | 2011-01-15 |
TW200632922A (en) | 2006-09-16 |
KR20070101240A (ko) | 2007-10-16 |
JP4857278B2 (ja) | 2012-01-18 |
KR20090038495A (ko) | 2009-04-20 |
US20060104120A1 (en) | 2006-05-18 |
US7092290B2 (en) | 2006-08-15 |
TWI301981B (en) | 2008-10-11 |
EP1812932B1 (en) | 2010-12-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101095199B (zh) | 非易失性存储系统和用于编程非易失性存储器的方法 | |
CN101095197B (zh) | 浮动栅极之间的耦合效应减小的nand电可擦除可编程只读存储器 | |
CN100550205C (zh) | 非易失性存储器系统和编程非易失性存储器的方法 | |
CN102385924B (zh) | 借助非易失性存储器的循环的开始编程电压偏移 | |
CN100590742C (zh) | 用于非易失性存储器的编程控制的双调谐管理方法 | |
CN102187399B (zh) | 使用字线耦合的用于存储器的多趟次编程 | |
CN101356587B (zh) | 用于对具有减少的编程干扰的nand类型的非易失性存储器进行编程的以末为先模式 | |
CN102160119B (zh) | 非易失性存储器中感测期间的基于数据状态的温度补偿 | |
CN101057299B (zh) | 对非易失性存储器的并行编程 | |
CN100589202C (zh) | 多级单元快闪存储器中较高级状态的较快编程 | |
CN101689400B (zh) | 基于阈值电压分布的动态检验 | |
CN101268519B (zh) | 用自调整最大程序循环对非易失性存储器进行编程 | |
CN101361138B (zh) | 以对非选定字线的高效控制来读取非易失性存储器 | |
CN101371315B (zh) | 对显示位线耦合的非易失性存储器进行受控编程的方法 | |
CN101796591B (zh) | 使用针对改进感测的不同参考电平的非易失性存储器中的粗略/精细编程验证 | |
CN103814408A (zh) | 用于非易失性存储器的部分编程块的读取补偿 | |
CN101584003A (zh) | 非易失性存储器编程操作中的可变编程电压增量值 | |
CN101006519A (zh) | 非易失性存储器的可变编程 | |
KR20100044802A (ko) | 소스 바이어스 모든 비트라인 감지를 이용하는 비휘발성 저장 요소 | |
JP4879168B2 (ja) | 非揮発性メモリのプログラミングを制御するためのブースティング | |
JP4820879B2 (ja) | 非選択ワード線を効果的に制御して不揮発性メモリを読み出す方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGIES, INC. Free format text: FORMER OWNER: SANDISK CORPORATION Effective date: 20120913 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120913 Address after: American Texas Patentee after: Sandisk Corp. Address before: American California Patentee before: Sandisk Corp. |
|
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: American Texas Patentee after: DELPHI INT OPERATIONS LUX SRL Address before: American Texas Patentee before: Sandisk Corp. |