CN101088156A - 柔性电子电路制品及其制造方法 - Google Patents

柔性电子电路制品及其制造方法 Download PDF

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Publication number
CN101088156A
CN101088156A CNA2005800445752A CN200580044575A CN101088156A CN 101088156 A CN101088156 A CN 101088156A CN A2005800445752 A CNA2005800445752 A CN A2005800445752A CN 200580044575 A CN200580044575 A CN 200580044575A CN 101088156 A CN101088156 A CN 101088156A
Authority
CN
China
Prior art keywords
layer
fec
silicon
substrate
electronic circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800445752A
Other languages
English (en)
Chinese (zh)
Inventor
莫塞斯·M·大卫
凯瑟琳·B·莎伊
巴德理·维尔拉哈万
山崎英男
詹姆斯·R·舍克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN101088156A publication Critical patent/CN101088156A/zh
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688Flexible insulating substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09Treatments involving charged particles
    • H05K2203/095Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
CNA2005800445752A 2004-12-22 2005-11-17 柔性电子电路制品及其制造方法 Pending CN101088156A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/021,135 US20060131700A1 (en) 2004-12-22 2004-12-22 Flexible electronic circuit articles and methods of making thereof
US11/021,135 2004-12-22

Publications (1)

Publication Number Publication Date
CN101088156A true CN101088156A (zh) 2007-12-12

Family

ID=36594619

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800445752A Pending CN101088156A (zh) 2004-12-22 2005-11-17 柔性电子电路制品及其制造方法

Country Status (7)

Country Link
US (1) US20060131700A1 (https=)
EP (1) EP1829101A2 (https=)
JP (1) JP2008526019A (https=)
KR (1) KR20070091209A (https=)
CN (1) CN101088156A (https=)
TW (1) TW200638529A (https=)
WO (1) WO2006068741A2 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102981378A (zh) * 2012-11-15 2013-03-20 中山大学 一种去除聚酰亚胺柔性电极制备过程中光刻胶的方法
CN106104820A (zh) * 2014-03-25 2016-11-09 3M创新有限公司 具有共面导电零件的柔性电路及其制造方法
CN106711085A (zh) * 2016-12-12 2017-05-24 东莞市广信知识产权服务有限公司 一种柔性互连金属的制备方法
CN115064320A (zh) * 2022-07-22 2022-09-16 业成科技(成都)有限公司 导电层及其制作方法和电子设备

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053352B2 (en) * 2005-10-13 2011-11-08 International Business Machines Corporation Method and mesh reference structures for implementing Z-axis cross-talk reduction through copper sputtering onto mesh reference planes
US20080003804A1 (en) * 2006-06-29 2008-01-03 Ravi Nalla Method of providing solder bumps of mixed sizes on a substrate using solder transfer in two stages
US8158264B2 (en) * 2006-10-20 2012-04-17 3M Innovative Properties Company Method for easy-to-clean substrates and articles therefrom
US20080280164A1 (en) * 2007-05-11 2008-11-13 3M Innovative Properties Company Microporous carbon catalyst support material
KR100891531B1 (ko) * 2007-09-10 2009-04-03 주식회사 하이닉스반도체 패턴 정렬 불량 검출 장치
KR20170038894A (ko) 2014-08-07 2017-04-07 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반사 시트 및 그의 제조 방법
US10351729B2 (en) * 2016-03-03 2019-07-16 Motorola Mobility Llc Polysiloxane films and methods of making polysiloxane films

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613556A (en) * 1984-10-18 1986-09-23 Xerox Corporation Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide
DE3818509A1 (de) * 1987-06-01 1988-12-22 Gen Electric Verfahren und einrichtung zum herstellen eines niederohmigen kontaktes mit aluminium und dessen legierungen durch selektives niederschlagen von wolfram
JP2000164888A (ja) * 1992-07-21 2000-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2592392B2 (ja) * 1993-03-30 1997-03-19 株式会社 半導体エネルギー研究所 珪素を含む炭素被膜の作製方法
JP3344017B2 (ja) * 1993-08-23 2002-11-11 松下電工株式会社 金属と有機物の接合方法および配線板の製造方法
US5684356A (en) * 1996-03-29 1997-11-04 Texas Instruments Incorporated Hydrogen-rich, low dielectric constant gate insulator for field emission device
US5948166A (en) * 1996-11-05 1999-09-07 3M Innovative Properties Company Process and apparatus for depositing a carbon-rich coating on a moving substrate
US5888594A (en) * 1996-11-05 1999-03-30 Minnesota Mining And Manufacturing Company Process for depositing a carbon-rich coating on a moving substrate
US6071597A (en) * 1997-08-28 2000-06-06 3M Innovative Properties Company Flexible circuits and carriers and process for manufacture
JP3374901B2 (ja) * 1998-02-27 2003-02-10 日本電気株式会社 半導体装置
US6299294B1 (en) * 1999-07-29 2001-10-09 Hewlett-Packard Company High efficiency printhead containing a novel oxynitride-based resistor system
US6696157B1 (en) * 2000-03-05 2004-02-24 3M Innovative Properties Company Diamond-like glass thin films
US6863795B2 (en) * 2001-03-23 2005-03-08 Interuniversitair Microelektronica Centrum (Imec) Multi-step method for metal deposition
US6541842B2 (en) * 2001-07-02 2003-04-01 Dow Corning Corporation Metal barrier behavior by SiC:H deposition on porous materials
JP2004098570A (ja) * 2002-09-11 2004-04-02 Amt Kenkyusho:Kk フィルム状積層体およびフレキシブル回路基板

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102981378A (zh) * 2012-11-15 2013-03-20 中山大学 一种去除聚酰亚胺柔性电极制备过程中光刻胶的方法
CN106104820A (zh) * 2014-03-25 2016-11-09 3M创新有限公司 具有共面导电零件的柔性电路及其制造方法
CN106104820B (zh) * 2014-03-25 2019-04-26 3M创新有限公司 具有共面导电零件的柔性电路及其制造方法
CN106711085A (zh) * 2016-12-12 2017-05-24 东莞市广信知识产权服务有限公司 一种柔性互连金属的制备方法
CN106711085B (zh) * 2016-12-12 2019-02-19 东莞市广信知识产权服务有限公司 一种柔性互连金属的制备方法
CN115064320A (zh) * 2022-07-22 2022-09-16 业成科技(成都)有限公司 导电层及其制作方法和电子设备

Also Published As

Publication number Publication date
WO2006068741A2 (en) 2006-06-29
JP2008526019A (ja) 2008-07-17
KR20070091209A (ko) 2007-09-07
TW200638529A (en) 2006-11-01
EP1829101A2 (en) 2007-09-05
US20060131700A1 (en) 2006-06-22
WO2006068741A3 (en) 2007-01-25

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