CN101082963A - Rfid标签及其制造方法 - Google Patents

Rfid标签及其制造方法 Download PDF

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Publication number
CN101082963A
CN101082963A CNA2007101281799A CN200710128179A CN101082963A CN 101082963 A CN101082963 A CN 101082963A CN A2007101281799 A CNA2007101281799 A CN A2007101281799A CN 200710128179 A CN200710128179 A CN 200710128179A CN 101082963 A CN101082963 A CN 101082963A
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China
Prior art keywords
antenna
projection
paste
rfid label
chip
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CNA2007101281799A
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CN100543768C (zh
Inventor
石川直树
马场俊二
吉良秀彦
小林弘
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Fujitsu Ltd
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Fujitsu Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077Constructional details, e.g. mounting of circuits in the carrier
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Abstract

RFID标签及其制造方法。本发明提供了一种射频识别(RFID)标签,该RFID标签包括:基片;设置在所述基片上的通信用天线;以及通过凸块连接到所述天线上的电路芯片,所述电路芯片通过所述天线执行无线通信,其中所述天线由金属填料与树脂材料混合的糊剂形成,并且所述凸块正下方的天线部分由相比于除所述凸块正下方的部分之外的部分的糊剂改变了金属填料混合比的粘贴剂形成,以限制在将带有所述凸块的所述电路芯片连接到所述天线上时由压力所导致的凸块下陷。

Description

RFID标签及其制造方法
本申请是申请日为2005年4月22日,申请号为200510066359.X,发明名称为“RFID标签及其制造方法”的发明专利申请的分案申请。
技术领域
本发明涉及以非接触方式与外部装置交换信息的射频识别(RFID)标签及其制造方法。在一些情况下,在与本发明相应的技术领域内的技术人员中,将本说明书中提到的“RFID标签”称为“RFID tag inlay”,其作为“RFID标签”的内部构成元件(inlay)。在一些其它情况下,将该“RFID标签”称为“无线IC标签”。而且,该“RFID”标签包括非接触型IC卡。
背景技术
近年来,已经提出了各种类型的能够利用无线电波与读/写器代表的外部装置进行非接触信息交换的RFID标签。所提出的各种类型的RFID标签之一具有安装在由塑料或纸制成的基片上的用于无线电通信的天线图案和IC芯片。这种类型的RFID标签的可能的使用方式是将该RFID标签贴附到物品上并且与外部装置交换有关该物品的信息以识别该物品等。
图1(A)和图1(B)分别是RFID标签的例子的正视图和断面图。
图1(A)和1(B)中所示的RFID标签1构成如下:天线12,其设置在由聚对苯二甲酸乙二醇酯(PET)膜之类的片状材料构成的基片13上;IC芯片11,其通过凸块(bump)16连接到天线12上;以及覆片14,其通过粘合剂15粘接到基片13上以覆盖天线12和IC芯片11。
构成RFID标签1的IC芯片11能够通过天线12进行无线通信来与外部装置交换信息。
针对这种类型的RFID标签已经设计出包括上述使用方式在内的各种使用方式。在该类型RFID标签的使用中,如何降低RFID标签的制造成本已经是一个严峻的问题并且已经尝试各种方法来解决该问题。
作为试图降低制造成本的方法之一,提出了使用金属填料(通常情况下使用银)和树脂材料(例如环氧树脂)混合而成的导电糊状材料来形成天线的方法(日本特开2000-311226号公报([0066]段))。如果可以使用这种糊状材料替代通常使用的铜、铝或金等的薄金属材料作为构成天线的材料,则能够大大降低RFID标签的制造成本。
在如图1所示的RFID标签中,IC芯片11通过在IC芯片11的电极上形成的凸块(金属突起)16连接到形成在基片13(片状PET构件等)表面上的天线12,当制造该RFID标签时,如果通过印刷糊状材料来形成天线12,则IC芯片11和天线12之间的连接可能会出现以下问题。
图2(A)示出了使用金属作为天线材料的情况,图2(B)示出了使用糊剂作为天线材料的情况,以作比较。
在由PET制成的基片13上形成由金属薄片构成的天线121(图2(A))或由糊状材料构成的天线122(图2(B))。在图2(A)和2(B)中所示的各情况中,在IC芯片11上形成的电极111上形成凸块16。
图2(A)和2(B)中所示的各个状态示出了以下情况:带有凸块16的IC芯片11处于形成有天线121或122的基片13上,使得凸块16面对基片13,并且IC芯片11通过凸块16连接到天线121或122。
在图2(A)和2(B)中,省略了图1(B)中所示的粘合剂15和覆片14。在进行连接时,使用夹具(未示出)如图中所示从上按压IC芯片11。从而使压力从凸块16施加到天线121或122。在如图2(A)中所示由金属材料制成天线121的情况中,由于天线121的硬度很大因此该按压不会存在问题。在如图2(B)中所示的由糊状材料制成天线122的情况中,存在以下问题。由天线122从凸块16接收到的压力使糊状材料变形以符合凸块16的形状,由此在天线122和凸块16之间的连接处引起糊状材料的受压弯曲,导致弯曲部分的图案断裂和下陷。在该情况下,无法在IC芯片11和天线122之间保持必要的绝缘距离。如果改变了该距离,则RFID标签的包括无线通信特性在内的特性(以下称为标签特性)也会改变,导致在制造大量RFID标签时标签特性出现差异。
正在广泛采用的方法是在与RFID标签分开的电路板上安装各种类型的IC芯片。在通常情况下,在IC芯片上形成多个凸块,并且即使使用糊状材料作为电路板上的布线材料时每个凸块所受的压力也很小,因此糊状材料的突起就不是严重的问题。
相反,在RFID标签的情况中,由于一个IC芯片中设置的用于连接到天线的凸块的数量大约是两个或四个,因此每个凸块的压力非常大并由此会引起上述下陷问题。为了减小压力,与放置其上形成多个凸块的普通IC芯片的情况相比,用于将该IC芯片放置在基片上的装置在放置该IC芯片时所施加的压力必须被减小到极小值。此外,由于在基片和IC芯片之间有粘合剂,因此很难在短时间内在能够进行可靠连接的同时将压力减小到极小值。
发明内容
鉴于上述情况提出了本发明,本发明提供了一种RFID标签以及该RFID标签的制造方法,该RFID标签使用糊剂作为天线材料并能够避免由于凸块下陷而使标签特性改变的问题。
根据本发明,提供了一种射频识别RFID标签,其包括:基片;设置在基片上的通信用天线;以及通过凸块连接到该天线的电路芯片,该电路芯片通过天线进行无线通信,其中该天线由金属填料和树脂材料混合而成的糊剂构成,并且凸块正下方的天线部分由相对于凸块正下方部分以外的部分改变了金属填料混合比的糊剂构成,以在将带有凸块的电路芯片连接到天线上时限制由于压力导致的凸块下陷。
在本发明的RFID标签中,改变凸块正下方的天线部分的金属填料混合比,以限制下陷,从而可以稳定RFID标签的特性。
根据本发明,提供了RFID标签的制造方法,包括:天线印刷步骤,采用金属填料和树脂材料混合而成的糊剂在基片上印刷出通信用天线;电路芯片安装步骤,安装能够通过天线执行无线通信的带有凸块的电路芯片,电路芯片与天线通过凸块相互连接,其中所述天线印刷步骤包括:第一印刷步骤,采用金属填料和树脂材料混合而成的糊剂印刷出天线的除与凸块连接的部分以外的部分;和第二印刷步骤,采用与第一印刷步骤中使用的糊剂相比改变了金属填料混合比的糊剂印刷出天线的与凸块连接的部分,从而在天线的与凸块相连的部分上形成硬导电膜,该硬导电膜用于在将带有凸块的电路芯片连接到天线时限制由压力所导致的凸块下陷。
根据本发明,如上所述,使用糊剂作为天线材料并限制了通过凸块施加的压力所导致的电路芯片的凸块下陷,从而使标签特性稳定。
附图说明
图1(A)和1(B)分别是RFID标签的例子的正视图和断面图;
图2(A)和2(B)分别示出了使用金属作为天线材料的情况以及使用糊剂作为天线材料的情况,以作比较;
图3是根据本发明第一实施例的RFID标签的断面图;
图4是根据本发明第二实施例的RFID标签的断面图;
图5是根据本发明第三实施例的RFID标签的断面图;
图6(A)至6(C)示出了作为本发明第三实施例的变型例的RFID标签;
图7是根据本发明第四实施例的RFID标签的断面图;
图8是根据本发明第五实施例的RFID标签的断面图;
图9是根据本发明第六实施例的RFID标签的断面图;
图10是根据本发明第七实施例的RFID标签的断面图;
图11是根据本发明第八实施例的RFID标签的断面图;
图12是根据本发明第九实施例的RFID标签的基片和天线部分的断面图;
图13(A)至13(C)示出了在IC芯片的电极上形成凸块的方法;
图14示出了夷平凸块的方法;
图15(A)至15(C)示出了夷平后的凸块;
图16(A)至16(D)示出了如图3中所示的具有由带孔聚酰亚胺膜构成的阻挡物的RFID标签的制造方法;
图17(A)至17(C)示出了图4中所示的具有由带孔PET构成的阻挡物的RFID标签的制造方法;
图18(A)至18(C)示出了如图5中所示的具有阻挡物的RFID标签的制造方法;
图19(A)和19(B)示出了图7中所示的具有塑料填料的RFID标签的制造方法;
图20(A)至20(D)示出了图8中所示的RFID标签的制造方法;
图21(A)至21(D)示出了图9中所示的RFID标签的制造方法;
图22(A)至22(D)示出了图10中所示的RFID标签的制造方法;
图23(A)至23(C)示出了图11中所示的RFID标签的制造方法;以及
图24(A)和24(B)示出了图12中所示的RFID标签的制造方法。
具体实施方式
以下参照其实施例对本发明进行说明。
图3是根据本发明第一实施例的RFID标签的断面图。
在以下参照的图3和其它附图中,与上面参照图2所述的RFID标签的构件对应的构件由相同标号表示并且不重复说明。仅对与上述RFID标签不同的地方进行说明。在以下参照的图3和其它附图中,原则上省略了基片13与IC芯片11之间的粘合剂15以及覆盖RFID标签的上部的基片14(参见图2(B)),如图2中那样。但是,下面参照图20所述的本发明的特征在于粘合剂。因此,在图20中示出了该粘合剂。而且,在以下所述的实施例中,基片13由PET构成,并且天线122使用银填料与树脂材料(除非特别说明,例如环氧树脂)混合而成的糊剂构成。
在图3中所示的RFID标签1A中,在IC芯片11上形成在对应于凸块的位置处具有孔的聚酰亚胺膜21。聚酰亚胺膜21比凸块16的高度略低(比凸块16薄)。当将带有凸块16的IC芯片11和聚酰亚胺膜21连接到天线122时,聚酰亚胺膜21用作限制凸块16下陷的阻挡物(参见图2(B)),由此使RFID标签的标签特性稳定。
图4是根据本发明第二实施例的RFID标签的断面图。
在图4中所示的RFID标签1B中,将具有孔的PET构件22粘附到基片13上。PET构件22的厚度比凸块16的高度略小。当将带有凸块16的IC芯片11连接到天线122时,PET构件22用作阻挡物以限制凸块16下陷,由此使RFID标签的标签特性稳定。
图5是根据本发明第三实施例的RFID标签的断面图。
在图5中所示的RFID标签1C中,在将IC芯片11连接到天线122之前在基片13侧形成高度略低于凸块16的突起(阻挡物部分23)。当将带有凸块16的IC芯片11连接到天线122时,通过阻挡物部分23的作用限制凸块16的下陷。
图6(A)至6(C)示出了作为本发明第三实施例的变型例的RFID标签(参见图5)。图6(A)是一断面图,图6(B)是一平面图,示出了在安装IC芯片之前的基片,以及图6(C)是一平面图,示出了在安装IC芯片之后的基片。在图6(C)中,仅由虚线表示IC芯片的位置。
而且在图6(A)至6(C)中所示的RFID标签1C’中,在将IC芯片11连接到天线122之前,在基片13上形成高度略低于凸块16的突起(阻挡物部分23),如图5中所示的情况中那样。当将带有凸块16的IC芯片11连接到天线122时,通过阻挡物部分23的作用限制凸块16的下陷。在图6(A)至6(C)中所示的RFID标签1C’的情况中,在基片13上除了连接凸块16的部分以外的安装IC芯片11的部分上形成了阻挡物部分23。也就是说,阻挡物部分23延伸而填充了天线122的两端之间没有天线部分的几乎整个区域。如果阻挡物部分23与没有天线图案部分的区域一致,则可以在将IC芯片11安装到基片13上时保持IC芯片11的平衡(方位)并且改善IC芯片11与基片13之间的密切接触。
图7是根据本发明第四实施例的RFID标签的断面图。
在图7中所示的RFID标签1D中,把直径略小于凸块16的高度的塑料填料24与粘合剂(未示出)混合。当将带有凸块16的IC芯片11连接到天线122时,塑料填料24用作阻挡物以限制凸块16的下陷。
图8是根据本发明第五实施例的RFID标签的断面图。
在图8中所示的RFID标签1E中,在由PET构成的基片13与天线122之间设置硬树脂层25。当将带有凸块16的IC芯片11连接到天线122时,由于存在硬树脂层25而限制了凸块16的下陷。
图9是根据本发明第六实施例的RFID标签的断面图。
在图9中所示的RFID标签1F中,在由PET构成的基片13与天线122之间放置比基片13更硬的PET片26。当将带有凸块16的IC芯片11连接到天线122时,由于存在硬PET片26而限制了凸块16的下陷,如图8中所示的RFID标签1E的情况那样。
图10是根据本发明第七实施例的RFID标签的断面图。
在图10中所示的RFID标签1G中,将金属制成的支撑物27设置在基片13上的天线122与凸块16位置对应的部分上。凸块16直接连接到支撑物27并通过支撑物27连接到天线122。在该RFID标签1G的情况中,由于存在支撑物27而阻止了凸块16的下陷。
图11是根据本发明第八实施例的RFID标签的断面图。
在图11中所示的RFID标签1H中,相对于天线122的要与凸块16连接的凸块安装部分122a以外的部分,增大凸块安装部分122a的银填料的填充系数,使得凸块安装部分122a的硬度高于其它部分,从而限制在天线122从凸块16接收压力时凸块16的下陷。
图12是根据本发明第九实施例的RFID标签的基片与天线部分的断面图。
在传统技术中还没有考虑到任何由于上述下陷所引起的缺陷。因此,通常,当采用糊剂作为天线122的材料时,填料与糊剂的混合,例如图12的(A)部分中所示的银填料等与环氧树脂等的树脂材料的混合,主要是为了向糊剂提供所需的导电性,以使糊剂起到天线的作用。
相反地,在具有图12的(B)部分中所示的基片和天线的RFID标签1I的情况中,用于向糊剂提供所需导电性以使糊剂起到天线作用的填料(如银填料)与诸如环氧树脂的树脂材料混合,并且还在树脂材料中混合了用于向糊剂构成的天线提供所需硬度的填料28(例如,铜、钯或镍)。采用混合了这些填料的糊剂形成天线122b。这样,防止了来自凸块16的压力所导致的凸块16下陷。
现在对上述各RFID标签1A至1I的制造方法进行说明。
图13(A)至13(D)示出了在IC芯片的电极上形成凸块的方法。
首先,使要形成为凸块的细金属线30从带孔的夹具20的尖部伸出,如图13(A)中所示,并在细金属线30和放电电极40之间产生放电。放电能量使细金属线30的尖部熔融而形成金属球31。
随后,将金属球3 1压在IC芯片11的电极111上,并通过夹具20向金属球31施加超声波,如图13(B)中所示。通过超声波使金属球31与IC芯片11的电极111接合。当去掉夹具20时,金属球31和细金属线30在根部脱落,从而在IC芯片11的电极111上形成原始形态的凸块32,如图13(C)中所示。
图14示出了凸块的夷平方法,图15(A)至15(C)示出了夷平后的凸块。
在如图13中所示的在IC芯片11的电极111上形成原始形态的凸块32之后,把该原始形态的凸块32按压在玻璃板50的平面上,如图14中所示。选择该按压的负荷以及按压高度以改变凸块的形状。也就是说,在低负荷且高位置按压的情况下形成具有图15(A)中所示形状的凸块16;在中等负荷且中等位置按压的情况下形成具有图15(B)中所示形状的凸块16;并且在高负荷且低位置按压的情况下形成具有图15(C)中所示形状的凸块16。
图16(A)至16(D)示出了图3中所示的具有由带孔聚酰亚胺膜形成的阻挡物的RFID标签的制造方法。
在设置有电极111的IC芯片11的表面上形成聚酰亚胺膜21(图16(A)),并通过激光加工或蚀刻仅去除聚酰亚胺膜21的与电极111对应的部分,由此与将形成凸块的电极111相对应地形成具有孔212的聚酰亚胺膜21(图16(B))。之后,通过图13(A)至13(C)中所示的方法在电极111上形成原始形态的凸块32,如图16(C)中所示。通过图14和图15(A)至15(C)中所示的方法在原始形态的凸块32上进行夷平,形成略高于聚酰亚胺膜21的凸块16。将面向基片13的凸块16和天线122彼此连接(图16(D))。此时,聚酰亚胺膜21用作阻挡物以限制凸块16下陷。
图17(A)至17(C)示出了图4中所示的具有由带孔PET形成的阻挡物的RFID标签的制造方法。
制备带有孔221的PET构件22(图17(A))并将其施加到形成有天线122的基片13上,孔221与凸块连接部分对准(图17(B))。之后安装IC芯片11(图17(C))。此时,PET构件22用作阻挡物以防止凸块16下陷。
图18(A)至18(C)示出了图5中所示的具有阻挡物的RFID标签的制造方法。
在形成有天线122的基片13的表面上形成由绝缘材料制成的膜231(图18(A))。作为该膜231的材料,例如可使用聚酰亚胺、环氧树脂、聚酯等。由此形成的膜231具有比之后形成的凸块16的高度略小的厚度。通过化学蚀刻去除膜231的不需要部分,仅留下膜231的与天线122上要连接凸块的部分相邻的部分,由此在基片13上形成阻挡物部分23(图18(B))。将带有凸块16的IC芯片11安装在基片13上并将凸块16和天线122相互连接。由于将阻挡物部分23形成为高度略低于连接前的凸块16,因此将凸块16可靠地连接到天线122上,并且通过阻挡物部分23的作用阻止凸块16的下陷。
尽管参照图18(A)至18(C)  经对根据图5中所示的第三实施例的RFID标签的制造方法作了描述,但也可以通过形成形状如图6(B)所示的阻挡物部分23来制造作为第三实施例的变型例的图6(A)至6(C)中所示的RFID标签。
图19(A)和19(B)示出了图7中所示的包括塑料填料的RFID标签的制造方法。
如图19(A)中所示,将混合有塑料填料24的粘合剂15施加到形成有天线122的基片13的一部分上。基片13的施加塑料填料24的部分与要连接到凸块的部分相邻,并限于填料不会扩散到凸块连接部分的位置。通过从喷嘴向基片13上供给包含塑料填料24的粘合剂来执行该施加步骤。
之后,在基片13上安装带有凸块16的IC芯片11,并且把凸块16和天线122相互连接,如图19(B)中所示。但是,此时,由于塑料填料24的直径略小于凸块16的高度,因此凸块16与天线122可靠地连接,并且塑料填料24用作阻挡物以防止凸块16的下陷。
图20(A)至20(D)示出了图8中所示的RFID标签的制造方法。
在该情况下,制备硬树脂片251(图20(A))并通过粘合剂252将硬树脂片251粘接到基片13上来形成硬树脂层25(图20(B))。
之后,将形成有孔作为天线122的图案的印刷母版80设置在硬树脂片251上,并使用刮板81将作为天线122材料的糊剂83挤入印刷母版80的孔内,从而进行印刷(图20(C))。
之后,去掉用于形成突起的印刷母版80,随后进行烘干。由此形成天线122。
作为印刷母版80,可以使用具有通过蚀刻在所需位置形成的多个孔的薄铝或SUS板等。
由于印刷糊剂的技术是公知的,因此在其它实施例说明中没有对天线1 22的制造方法进行说明。但是,可以使用与上述相同的方法来形成其它实施例中的天线122。
在将天线122印刷到硬树脂层25上之后,在凸块16按压在天线122上的状态下安装IC芯片11,如图20(D)中所示。此时,由于存在硬树脂层25而防止了凸块16的下陷。
图21(A)至21(D)示出了图9中所示的RFID标签的制造方法。
在此情况下,制备比PET形成的基片13更硬的PET片26(图21(A))。通过粘合剂252将硬PET片26粘接到基片13(图21(B))。作为基片13的材料,使用聚丙烯系的软PET。作为粘接到基片13上的硬PET片26,可以使用聚酯或尼龙片。
随后的制造步骤与图20(C)和20(D)中所示的步骤相同。在PET片26上印刷天线122(图21(C))并安装IC芯片11(图21(D))。在进行该安装时,由于存在硬PET片26而防止了凸块16的下陷。
图22(A)至22(D)示出了图10中所示的RFID标签的制造方法。
在此情况下,在已经将天线122印刷到基片13上之后(图22(A)),将导电粘合剂或压敏粘合剂271施加到天线122的要与凸块连接的部分上(图22(B)),并将金属支撑物27粘接到天线122的表面上(图22(C))。之后,安装IC芯片11使得凸块16处于支撑物27上(图22(D))。在进行该安装时,由于存在支撑物27而防止了凸块16的下陷。
图23(A)至23(C)示出了图11中所示的RFID标签的制造方法。
在此情况下,制备用于印刷天线的除了要与凸块连接的凸块安装部分以外的部分的模板801,并且使用刮板81和印刷糊剂83(其中银填料与环氧树脂等的树脂材料混合)在基片13上印刷出该部分(图23(A))。之后,制备用于印刷天线的凸块安装部分的模板802,并使用刮板81和印刷糊剂831在基片13上印刷凸块安装部分,在该印刷糊剂831中改变了银填料的混合比,从而与用于印刷凸块安装部分以外的部分的粘贴剂83相比增大了硬度(图23(B))。在以此方式形成了包括凸块安装部分122a的天线122之后,在基片13上安装IC芯片11(图23(C))。在进行该安装时,因为凸块16所连接的凸块安装部分122a具有高硬度,所以防止了凸块16的下陷。
图24(A)和24(B)示出了图12中所示的RFID标签的制造方法。
在此情况下,通过使用粘贴剂832作为天线材料在基片13上印刷出天线,在粘贴剂832中,用于硬化到足以有效限制凸块下陷的铜、钯或镍等的填料与环氧树脂等的树脂材料以及用于向树脂材料提供天线所需的导电性的银填料混合(图24(A))。之后,在已经形成硬天线122b的基片13上安装IC芯片11,使得在IC芯片11上形成的凸块16和天线122b彼此连接(图24(B))。此时,因为天线122b具有足够高的硬度,防止了凸块16的下陷。

Claims (2)

1.一种射频识别RFID标签,该射频识别RFID标签包括:
基片;
设置在所述基片上的通信用天线;以及
通过凸块连接到所述天线上的电路芯片,所述电路芯片通过所述天线执行无线通信,
其中所述天线由金属填料与树脂材料混合的糊剂形成,并且所述凸块正下方的天线部分由相比于除所述凸块正下方的部分之外的部分的糊剂改变了金属填料混合比的粘贴剂形成,以限制在将带有所述凸块的所述电路芯片连接到所述天线上时由压力所导致的凸块下陷。
2.一种射频识别RFID标签的制造方法,该射频识别RFID标签的制造方法包括:
天线印刷步骤,使用金属填料与树脂材料混合而成的糊剂在基片上印刷出通信用天线;和
电路芯片安装步骤,安装能够通过所述天线进行无线通信的带有凸块的电路芯片,所述电路芯片与所述天线通过所述凸块彼此连接,
其中所述天线印刷步骤包括:第一印刷步骤,采用金属填料和树脂材料混合而成的糊剂印刷出天线的除与凸块连接的部分以外的部分;和第二印刷步骤,采用与第一印刷步骤中使用的糊剂相比改变了金属填料混合比的糊剂印刷出天线的与凸块连接的部分,从而在天线的与凸块连接的部分上形成硬导电膜,该硬导电膜用于在将带有所述凸块的所述电路芯片连接到所述天线上时限制由压力所导致的凸块下陷。
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US8162231B2 (en) * 2006-11-01 2012-04-24 Dai Nippon Printing Co., Ltd. Noncontact IC tag label and method of manufacturing the same
WO2008143043A1 (ja) * 2007-05-14 2008-11-27 Tateyama Kagaku Industry Co., Ltd. 無線icタグおよび無線icタグの製造方法
US7651882B1 (en) * 2007-08-09 2010-01-26 Impinj, Inc. RFID tag circuit die with shielding layer to control I/O bump flow
JP2010238082A (ja) * 2009-03-31 2010-10-21 Toshiba Corp Icカード
JP5296630B2 (ja) * 2009-08-06 2013-09-25 富士通株式会社 無線タグおよび無線タグ製造方法
FR2954588B1 (fr) * 2009-12-23 2014-07-25 Commissariat Energie Atomique Procede d'assemblage d'au moins une puce avec un element filaire, puce electronique a element de liaison deformable, procede de fabrication d'une pluralite de puces, et assemblage d'au moins une puce avec un element filaire
US8860227B2 (en) * 2011-06-22 2014-10-14 Panasonic Corporation Semiconductor substrate having dot marks and method of manufacturing the same
DE102017122052A1 (de) * 2017-09-22 2019-03-28 Schreiner Group Gmbh & Co. Kg RFID-Etikett mit Schutz der RFID-Funktion
FR3083643B1 (fr) * 2018-07-04 2023-01-13 Commissariat Energie Atomique Procede de realisation d'un dispositif electronique

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5866951A (en) * 1990-10-12 1999-02-02 Robert Bosch Gmbh Hybrid circuit with an electrically conductive adhesive
CN1123067C (zh) 1995-05-22 2003-10-01 日立化成工业株式会社 具有与布线基板电连接的半导体芯片的半导体器件
KR100330652B1 (ko) * 1997-06-23 2002-03-29 사토 게니치로 Ic모듈 및 ic카드
JP3759305B2 (ja) * 1998-01-20 2006-03-22 日立化成工業株式会社 導電ぺースト印刷回路へのicベアチップ実装方法
FR2775810B1 (fr) * 1998-03-09 2000-04-28 Gemplus Card Int Procede de fabrication de cartes sans contact
JP2000311226A (ja) 1998-07-28 2000-11-07 Toshiba Corp 無線icカード及びその製造方法並びに無線icカード読取り書込みシステム
EP0977145A3 (en) 1998-07-28 2002-11-06 Kabushiki Kaisha Toshiba Radio IC card
CN1243294A (zh) * 1998-07-28 2000-02-02 东芝株式会社 集成电路卡和数据读写装置和无线标记及它们的制造方法
FR2781924B1 (fr) 1998-07-30 2002-11-29 St Microelectronics Sa Procede de montage de circuits integres
JP2000195900A (ja) * 1998-12-25 2000-07-14 Denso Corp 半導体装置
US6891110B1 (en) 1999-03-24 2005-05-10 Motorola, Inc. Circuit chip connector and method of connecting a circuit chip
KR100455748B1 (ko) * 1999-10-08 2004-11-06 다이니폰 인사츠 가부시키가이샤 비접촉식 데이터 캐리어 및 집적회로칩
JP3451373B2 (ja) 1999-11-24 2003-09-29 オムロン株式会社 電磁波読み取り可能なデータキャリアの製造方法
EP1325517A2 (en) * 2000-09-19 2003-07-09 Nanopierce Technologies Inc. Method for assembling components and antennae in radio frequency identification devices

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CN1783116A (zh) 2006-06-07
CN100495433C (zh) 2009-06-03
CN101082961B (zh) 2010-06-09
EP1667221A1 (en) 2006-06-07
CN100355050C (zh) 2007-12-12
US20060131426A1 (en) 2006-06-22
KR20060061749A (ko) 2006-06-08
US7298265B2 (en) 2007-11-20
JP4669270B2 (ja) 2011-04-13
TWI297125B (en) 2008-05-21
KR100638232B1 (ko) 2006-10-25
CN100543768C (zh) 2009-09-23
JP2006163449A (ja) 2006-06-22
CN101082962A (zh) 2007-12-05
CN101082961A (zh) 2007-12-05
TW200620124A (en) 2006-06-16
CN100481122C (zh) 2009-04-22

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