CN101080669A - 作为含硅光致抗蚀剂的垫层的低折射指数聚合物 - Google Patents
作为含硅光致抗蚀剂的垫层的低折射指数聚合物 Download PDFInfo
- Publication number
- CN101080669A CN101080669A CNA2005800431800A CN200580043180A CN101080669A CN 101080669 A CN101080669 A CN 101080669A CN A2005800431800 A CNA2005800431800 A CN A2005800431800A CN 200580043180 A CN200580043180 A CN 200580043180A CN 101080669 A CN101080669 A CN 101080669A
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- China
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- polymkeric substance
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/952—Utilizing antireflective layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
样品 | 聚合物组成 | 在193nm下的n | 在193nm下的k |
1 | VN/HNM(60/40) | 1.3 | 0.25 |
2 | VN/HNM/HEMA(37.5/37.5/25) | 1.41 | 0.21 |
3 | HNM | 1.49 | 0.24 |
Claims (29)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/013,971 US7326523B2 (en) | 2004-12-16 | 2004-12-16 | Low refractive index polymers as underlayers for silicon-containing photoresists |
US11/013,971 | 2004-12-16 | ||
US11/195,566 | 2005-08-02 | ||
US11/195,566 US7439302B2 (en) | 2004-12-16 | 2005-08-02 | Low refractive index polymers as underlayers for silicon-containing photoresists |
PCT/US2005/043210 WO2006096221A1 (en) | 2004-12-16 | 2005-11-30 | Low refractive index polymers as underlayers for silicon-containing photoresists |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101080669A true CN101080669A (zh) | 2007-11-28 |
CN101080669B CN101080669B (zh) | 2012-08-29 |
Family
ID=36596301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800431800A Expired - Fee Related CN101080669B (zh) | 2004-12-16 | 2005-11-30 | 适合在多层光刻方法中用作平面化垫层的组合物及其应用方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7326523B2 (zh) |
JP (1) | JP5220418B2 (zh) |
CN (1) | CN101080669B (zh) |
Cited By (3)
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CN103365094A (zh) * | 2012-04-09 | 2013-10-23 | 中芯国际集成电路制造(上海)有限公司 | 双重光刻胶结构及其处理方法 |
CN109073977A (zh) * | 2016-04-28 | 2018-12-21 | 日产化学株式会社 | 抗蚀剂下层膜形成用组合物 |
CN111032788A (zh) * | 2017-09-28 | 2020-04-17 | 日本瑞翁株式会社 | 树脂组合物及树脂膜 |
Families Citing this family (30)
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US7691556B2 (en) | 2004-09-15 | 2010-04-06 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
US7544750B2 (en) * | 2005-10-13 | 2009-06-09 | International Business Machines Corporation | Top antireflective coating composition with low refractive index at 193nm radiation wavelength |
US7485573B2 (en) * | 2006-02-17 | 2009-02-03 | International Business Machines Corporation | Process of making a semiconductor device using multiple antireflective materials |
JP5112733B2 (ja) * | 2006-04-11 | 2013-01-09 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | フォトリソグラフィ用コーティング組成物 |
CN101308329B (zh) * | 2007-04-06 | 2013-09-04 | 罗门哈斯电子材料有限公司 | 涂料组合物 |
WO2008143095A1 (ja) * | 2007-05-17 | 2008-11-27 | Nissan Chemical Industries, Ltd. | 感光性樹脂及びマイクロレンズの製造方法 |
US20090035704A1 (en) * | 2007-08-03 | 2009-02-05 | Hong Zhuang | Underlayer Coating Composition Based on a Crosslinkable Polymer |
US20090042133A1 (en) * | 2007-08-10 | 2009-02-12 | Zhong Xiang | Antireflective Coating Composition |
US8039201B2 (en) * | 2007-11-21 | 2011-10-18 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8329387B2 (en) * | 2008-07-08 | 2012-12-11 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US8221965B2 (en) * | 2008-07-08 | 2012-07-17 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US8084193B2 (en) * | 2008-07-12 | 2011-12-27 | International Business Machines Corporation | Self-segregating multilayer imaging stack with built-in antireflective properties |
KR20100036827A (ko) * | 2008-09-30 | 2010-04-08 | 금호석유화학 주식회사 | 레지스트용 중합체 및 이를 이용하여 제조된 레지스트 조성물 |
US20100092894A1 (en) * | 2008-10-14 | 2010-04-15 | Weihong Liu | Bottom Antireflective Coating Compositions |
US8822347B2 (en) * | 2009-04-27 | 2014-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wet soluble lithography |
US8304179B2 (en) * | 2009-05-11 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing a semiconductor device using a modified photosensitive layer |
KR20120105545A (ko) * | 2010-01-18 | 2012-09-25 | 닛산 가가쿠 고교 가부시키 가이샤 | 감광성 레지스트 하층막 형성 조성물 및 레지스트 패턴의 형성 방법 |
JP5598351B2 (ja) * | 2010-02-16 | 2014-10-01 | 信越化学工業株式会社 | 電子線用又はeuv用化学増幅ポジ型レジスト組成物及びパターン形成方法 |
JP5598350B2 (ja) * | 2010-02-16 | 2014-10-01 | 信越化学工業株式会社 | 電子線用又はeuv用化学増幅ネガ型レジスト組成物及びパターン形成方法 |
US8507192B2 (en) | 2010-02-18 | 2013-08-13 | Az Electronic Materials Usa Corp. | Antireflective compositions and methods of using same |
US8445181B2 (en) | 2010-06-03 | 2013-05-21 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
JPWO2012081619A1 (ja) * | 2010-12-17 | 2014-05-22 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
US8455312B2 (en) * | 2011-09-12 | 2013-06-04 | Cindy X. Qiu | Fabrication methods for T-gate and inverted L-gate structure for high frequency devices and circuits |
SG11201505710UA (en) | 2013-01-28 | 2015-08-28 | Nippon Soda Co | Coating agent |
WO2015146524A1 (ja) * | 2014-03-24 | 2015-10-01 | Jsr株式会社 | パターン形成方法 |
KR20170012189A (ko) * | 2014-05-22 | 2017-02-02 | 닛산 가가쿠 고교 가부시키 가이샤 | 아크릴아미드 구조와 아크릴산에스테르 구조를 포함하는 폴리머를 포함하는 리소그래피용 레지스트 하층막 형성 조성물 |
KR101771542B1 (ko) | 2014-07-15 | 2017-09-05 | 삼성에스디아이 주식회사 | 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법 |
JP6944255B2 (ja) * | 2017-03-14 | 2021-10-06 | Hoya株式会社 | 転写用マスクの製造方法、および半導体デバイスの製造方法 |
US10381481B1 (en) | 2018-04-27 | 2019-08-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-layer photoresist |
CN108997579B (zh) * | 2018-07-31 | 2021-04-06 | 湖南工业大学 | 一种含蒽结构的芳香族超支化聚酰亚胺及其制备方法和应用 |
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-
2004
- 2004-12-16 US US11/013,971 patent/US7326523B2/en not_active Expired - Fee Related
-
2005
- 2005-08-02 US US11/195,566 patent/US7439302B2/en active Active
- 2005-11-30 CN CN2005800431800A patent/CN101080669B/zh not_active Expired - Fee Related
- 2005-11-30 JP JP2007546713A patent/JP5220418B2/ja not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103365094A (zh) * | 2012-04-09 | 2013-10-23 | 中芯国际集成电路制造(上海)有限公司 | 双重光刻胶结构及其处理方法 |
CN103365094B (zh) * | 2012-04-09 | 2015-09-02 | 中芯国际集成电路制造(上海)有限公司 | 双重光刻胶结构及其处理方法 |
CN109073977A (zh) * | 2016-04-28 | 2018-12-21 | 日产化学株式会社 | 抗蚀剂下层膜形成用组合物 |
CN109073977B (zh) * | 2016-04-28 | 2022-04-05 | 日产化学株式会社 | 抗蚀剂下层膜形成用组合物 |
CN111032788A (zh) * | 2017-09-28 | 2020-04-17 | 日本瑞翁株式会社 | 树脂组合物及树脂膜 |
Also Published As
Publication number | Publication date |
---|---|
US20060134546A1 (en) | 2006-06-22 |
CN101080669B (zh) | 2012-08-29 |
JP2008524382A (ja) | 2008-07-10 |
US7326523B2 (en) | 2008-02-05 |
US20060134547A1 (en) | 2006-06-22 |
JP5220418B2 (ja) | 2013-06-26 |
US7439302B2 (en) | 2008-10-21 |
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