CN101072813B - 硅氧烷树脂涂料 - Google Patents

硅氧烷树脂涂料 Download PDF

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Publication number
CN101072813B
CN101072813B CN2005800420191A CN200580042019A CN101072813B CN 101072813 B CN101072813 B CN 101072813B CN 2005800420191 A CN2005800420191 A CN 2005800420191A CN 200580042019 A CN200580042019 A CN 200580042019A CN 101072813 B CN101072813 B CN 101072813B
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CN
China
Prior art keywords
silicone resin
numerical value
phenyl
weight
rsix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005800420191A
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English (en)
Chinese (zh)
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CN101072813A (zh
Inventor
B·钟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
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Dow Corning Corp
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Filing date
Publication date
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Publication of CN101072813A publication Critical patent/CN101072813A/zh
Application granted granted Critical
Publication of CN101072813B publication Critical patent/CN101072813B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Catching Or Destruction (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
  • Traffic Control Systems (AREA)
CN2005800420191A 2004-12-17 2005-09-23 硅氧烷树脂涂料 Expired - Fee Related CN101072813B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US63700104P 2004-12-17 2004-12-17
US60/637,001 2004-12-17
PCT/US2005/034236 WO2006065310A2 (en) 2004-12-17 2005-09-23 Siloxane resin coating

Publications (2)

Publication Number Publication Date
CN101072813A CN101072813A (zh) 2007-11-14
CN101072813B true CN101072813B (zh) 2011-06-08

Family

ID=36588304

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800420191A Expired - Fee Related CN101072813B (zh) 2004-12-17 2005-09-23 硅氧烷树脂涂料

Country Status (9)

Country Link
US (2) US7838615B2 (de)
EP (1) EP1846479B1 (de)
JP (1) JP5412037B2 (de)
KR (1) KR101191098B1 (de)
CN (1) CN101072813B (de)
AT (1) ATE486098T1 (de)
DE (1) DE602005024447D1 (de)
TW (1) TWI384016B (de)
WO (1) WO2006065310A2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7756384B2 (en) 2004-11-08 2010-07-13 Dow Corning Corporation Method for forming anti-reflective coating
ATE400672T1 (de) 2004-12-17 2008-07-15 Dow Corning Verfahren zur ausbildung einer antireflexionsbeschichtung
CN101072813B (zh) * 2004-12-17 2011-06-08 陶氏康宁公司 硅氧烷树脂涂料
KR101253487B1 (ko) 2004-12-17 2013-04-11 다우 코닝 코포레이션 반사방지막의 형성방법
CN101371196B (zh) 2006-02-13 2012-07-04 陶氏康宁公司 抗反射涂料
US7704670B2 (en) 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US8026040B2 (en) 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
WO2008104881A1 (en) 2007-02-27 2008-09-04 Az Electronic Materials Usa Corp. Silicon-based antifrelective coating compositions
US8653217B2 (en) 2007-05-01 2014-02-18 Dow Corning Corporation Method for forming anti-reflective coating
JP2009199061A (ja) * 2007-11-12 2009-09-03 Rohm & Haas Electronic Materials Llc オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
KR20100114075A (ko) 2008-01-15 2010-10-22 다우 코닝 코포레이션 실세스퀴옥산 수지
US9808345B2 (en) 2008-07-24 2017-11-07 Iorthopedics, Inc. Resilient arthroplasty device
JP5632387B2 (ja) * 2008-12-10 2014-11-26 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ 湿式エッチング可能な反射防止膜
CN102245674B (zh) 2008-12-10 2014-12-10 陶氏康宁公司 倍半硅氧烷树脂
KR20110035924A (ko) * 2009-09-29 2011-04-06 제이에스알 가부시끼가이샤 광반도체 소자의 제조 방법 및 광반도체 소자 보호층 형성용 조성물
JP2011097024A (ja) * 2009-09-29 2011-05-12 Jsr Corp 光半導体素子の製造方法、及び、光半導体素子保護層形成用組成物
JP5062352B2 (ja) 2010-09-09 2012-10-31 Ｊｓｒ株式会社 レジストパターン形成方法
TW201300459A (zh) * 2011-03-10 2013-01-01 Dow Corning 用於抗反射塗層的聚矽烷矽氧烷（ｐｏｌｙｓｉｌａｎｅｓｉｌｏｘａｎｅ）樹脂
TW201337465A (zh) * 2012-01-18 2013-09-16 Dow Corning 富含矽之抗反射塗覆材料及其製造方法
US9348228B2 (en) * 2013-01-03 2016-05-24 Globalfoundries Inc. Acid-strippable silicon-containing antireflective coating
CN107075119B (zh) * 2014-09-30 2021-01-05 株式会社钟化 硅氧烷树脂的制造方法
EP3431629B1 (de) * 2014-10-24 2021-11-24 Versum Materials US, LLC Zusammensetzungen und verfahren mit verwendung davon zur abscheidung von siliciumhaltigem film
US10886477B2 (en) * 2018-03-23 2021-01-05 Feng-wen Yen Iridium complex and organic electroluminescence device using the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5691396A (en) * 1995-09-25 1997-11-25 Shin-Etsu Chemical Co., Ltd. Polysiloxane compounds and positive resist compositions
US20010036998A1 (en) * 2000-03-30 2001-11-01 Yoshinori Sakamoto Anti-reflective coating-forming composition
US20020025495A1 (en) * 2000-08-09 2002-02-28 Tokyo Ohka Kogyo Co., Ltd Positive resist composition and base material carrying layer of the positive resist composition
US6359096B1 (en) * 1999-10-25 2002-03-19 Dow Corning Corporation Silicone resin compositions having good solution solubility and stability
US20020128388A1 (en) * 1999-06-10 2002-09-12 Alliedsignal Inc. Spin-on-glass anti-reflective coatings for photolithography
CN1543664A (zh) * 2001-09-12 2004-11-03 有机硅树脂和由其生产的多孔材料

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587138A (en) 1984-11-09 1986-05-06 Intel Corporation MOS rear end processing
CA2015806A1 (en) * 1989-05-02 1990-11-02 Thomas C. Williams Ambient temperature curable polyorganosiloxanes
US5100503A (en) 1990-09-14 1992-03-31 Ncr Corporation Silica-based anti-reflective planarizing layer
DE69300616T2 (de) 1992-04-30 1996-05-30 Ibm Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie.
EP0686680A4 (de) * 1993-12-27 1996-07-24 Kawasaki Steel Co Isolationsfilm für halbleiteranordnung, beschichtungsflüssigkeit für solchen film und verfahren zur herstellung desselben
JPH10158407A (ja) * 1996-11-28 1998-06-16 Toray Dow Corning Silicone Co Ltd オルガノポリシロキサンおよびその製造方法
US6218497B1 (en) * 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6057239A (en) 1997-12-17 2000-05-02 Advanced Micro Devices, Inc. Dual damascene process using sacrificial spin-on materials
US6344284B1 (en) 1998-04-10 2002-02-05 Organic Display Technology Organic electroluminescent materials and devices made from such materials
US6087064A (en) 1998-09-03 2000-07-11 International Business Machines Corporation Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
US6509259B1 (en) * 1999-06-09 2003-01-21 Alliedsignal Inc. Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices
US6268457B1 (en) 1999-06-10 2001-07-31 Allied Signal, Inc. Spin-on glass anti-reflective coatings for photolithography
US6824879B2 (en) * 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
KR100683428B1 (ko) * 1999-10-25 2007-02-20 다우 코닝 코포레이션 용액 용해도와 안정성이 우수한 실리콘 수지 조성물
KR100384810B1 (ko) * 2000-02-16 2003-05-22 금호석유화학 주식회사 저분자 화합물 첨가제를 포함하는 화학증폭형 레지스트조성물
JP4117437B2 (ja) * 2000-05-29 2008-07-16 Ｊｓｒ株式会社 膜形成用組成物、絶縁膜形成用材料およびシリカ系膜
US6420088B1 (en) 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
US6368400B1 (en) 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
TW588072B (en) 2000-10-10 2004-05-21 Shipley Co Llc Antireflective porogens
TW538319B (en) 2000-10-10 2003-06-21 Shipley Co Llc Antireflective composition, method for forming antireflective coating layer, and method for manufacturing electronic device
JP3865048B2 (ja) * 2000-11-01 2007-01-10 信越化学工業株式会社 レジスト材料及びパターン形成方法
GB0108274D0 (en) * 2001-04-03 2001-05-23 Dow Corning preparation of silicone resins
US6589711B1 (en) 2001-04-04 2003-07-08 Advanced Micro Devices, Inc. Dual inlaid process using a bilayer resist
CN1535301A (zh) * 2001-07-26 2004-10-06 陶氏康宁公司 硅氧烷树脂
US6596404B1 (en) * 2001-07-26 2003-07-22 Dow Corning Corporation Siloxane resins
US6746530B2 (en) 2001-08-02 2004-06-08 Chunghwa Pictures Tubes, Ltd. High contrast, moisture resistant antistatic/antireflective coating for CRT display screen
US20030096090A1 (en) * 2001-10-22 2003-05-22 Boisvert Ronald Paul Etch-stop resins
EP1478682A4 (de) 2001-11-15 2005-06-15 Honeywell Int Inc Antireflexionsbeschichtungen für die photolithographie und herstellungsverfahren dafür
WO2003044600A1 (en) 2001-11-15 2003-05-30 Honeywell International Inc. Spin-on anti-reflective coatings for photolithography
JP2005509710A (ja) 2001-11-16 2005-04-14 ハネウェル・インターナショナル・インコーポレーテッド フォトリソグラフィ用のスピンオングラス反射防止性コーティング
JP4373082B2 (ja) * 2001-12-28 2009-11-25 富士通株式会社 アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法
US6730454B2 (en) 2002-04-16 2004-05-04 International Business Machines Corporation Antireflective SiO-containing compositions for hardmask layer
DE10227807A1 (de) * 2002-06-21 2004-01-22 Honeywell Specialty Chemicals Seelze Gmbh Silylalkylester von Anthracen- und Phenanthrencarbonsäuren
US20040042020A1 (en) * 2002-08-29 2004-03-04 Vondran Gary L. Color space conversion
WO2004044025A2 (en) 2002-11-12 2004-05-27 Honeywell International Inc Anti-reflective coatings for photolithography and methods of preparation thereof
US20050282090A1 (en) 2002-12-02 2005-12-22 Hirayama Kawasaki-Shi Composition for forming antireflection coating
JP2004277463A (ja) * 2003-03-12 2004-10-07 Fujitsu Ltd 低誘電率膜用組成物
TW200505966A (en) * 2003-04-02 2005-02-16 Dow Global Technologies Inc Organosilicate resin formulation for use in microelectronic devices
US7368173B2 (en) 2003-05-23 2008-05-06 Dow Corning Corporation Siloxane resin-based anti-reflective coating composition having high wet etch rate
KR101253487B1 (ko) 2004-12-17 2013-04-11 다우 코닝 코포레이션 반사방지막의 형성방법
CN101072813B (zh) * 2004-12-17 2011-06-08 陶氏康宁公司 硅氧烷树脂涂料
CN101073039B (zh) 2004-12-17 2011-12-14 陶氏康宁公司 形成抗反射涂层的方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5691396A (en) * 1995-09-25 1997-11-25 Shin-Etsu Chemical Co., Ltd. Polysiloxane compounds and positive resist compositions
US20020128388A1 (en) * 1999-06-10 2002-09-12 Alliedsignal Inc. Spin-on-glass anti-reflective coatings for photolithography
US6359096B1 (en) * 1999-10-25 2002-03-19 Dow Corning Corporation Silicone resin compositions having good solution solubility and stability
US20010036998A1 (en) * 2000-03-30 2001-11-01 Yoshinori Sakamoto Anti-reflective coating-forming composition
US20020025495A1 (en) * 2000-08-09 2002-02-28 Tokyo Ohka Kogyo Co., Ltd Positive resist composition and base material carrying layer of the positive resist composition
CN1543664A (zh) * 2001-09-12 2004-11-03 有机硅树脂和由其生产的多孔材料

Also Published As

Publication number Publication date
JP2008524374A (ja) 2008-07-10
ATE486098T1 (de) 2010-11-15
JP5412037B2 (ja) 2014-02-12
EP1846479B1 (de) 2010-10-27
US7838615B2 (en) 2010-11-23
WO2006065310A3 (en) 2007-01-04
KR101191098B1 (ko) 2012-10-15
DE602005024447D1 (de) 2010-12-09
EP1846479A2 (de) 2007-10-24
TWI384016B (zh) 2013-02-01
WO2006065310A2 (en) 2006-06-22
CN101072813A (zh) 2007-11-14
US20070261600A1 (en) 2007-11-15
US8129491B2 (en) 2012-03-06
KR20070089160A (ko) 2007-08-30
TW200626638A (en) 2006-08-01
US20110034629A1 (en) 2011-02-10

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Granted publication date: 20110608

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