CN101065515B - 包括可置换可堆叠盘的固态前驱体传输系统 - Google Patents

包括可置换可堆叠盘的固态前驱体传输系统 Download PDF

Info

Publication number
CN101065515B
CN101065515B CN2005800409120A CN200580040912A CN101065515B CN 101065515 B CN101065515 B CN 101065515B CN 2005800409120 A CN2005800409120 A CN 2005800409120A CN 200580040912 A CN200580040912 A CN 200580040912A CN 101065515 B CN101065515 B CN 101065515B
Authority
CN
China
Prior art keywords
film precursor
replaceable
supporting component
precursor
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005800409120A
Other languages
English (en)
Chinese (zh)
Other versions
CN101065515A (zh
Inventor
铃木健二
以马利·盖德帝
格利特·J·莱乌辛克
原正道
黑岩大祐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/007,962 external-priority patent/US7484315B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101065515A publication Critical patent/CN101065515A/zh
Application granted granted Critical
Publication of CN101065515B publication Critical patent/CN101065515B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2005800409120A 2004-11-29 2005-10-03 包括可置换可堆叠盘的固态前驱体传输系统 Expired - Fee Related CN101065515B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/998,420 US7638002B2 (en) 2004-11-29 2004-11-29 Multi-tray film precursor evaporation system and thin film deposition system incorporating same
US10/998,420 2004-11-29
US11/007,962 2004-12-09
US11/007,962 US7484315B2 (en) 2004-11-29 2004-12-09 Replaceable precursor tray for use in a multi-tray solid precursor delivery system
PCT/US2005/035583 WO2006057710A1 (en) 2004-11-29 2005-10-03 A solid precursor delivery system comprising replaceable stackable trays

Publications (2)

Publication Number Publication Date
CN101065515A CN101065515A (zh) 2007-10-31
CN101065515B true CN101065515B (zh) 2010-05-26

Family

ID=36096429

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2005800409120A Expired - Fee Related CN101065515B (zh) 2004-11-29 2005-10-03 包括可置换可堆叠盘的固态前驱体传输系统
CN200580040914XA Expired - Lifetime CN101065516B (zh) 2004-11-29 2005-11-29 多盘膜前驱体蒸发系统和结合了该系统的薄膜沉积系统

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN200580040914XA Expired - Lifetime CN101065516B (zh) 2004-11-29 2005-11-29 多盘膜前驱体蒸发系统和结合了该系统的薄膜沉积系统

Country Status (8)

Country Link
US (2) US7638002B2 (enExample)
EP (1) EP1863950B1 (enExample)
JP (1) JP5015002B2 (enExample)
KR (1) KR101194888B1 (enExample)
CN (2) CN101065515B (enExample)
AT (1) ATE510043T1 (enExample)
TW (1) TWI300956B (enExample)
WO (1) WO2006058310A1 (enExample)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US7270848B2 (en) * 2004-11-23 2007-09-18 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US7708835B2 (en) * 2004-11-29 2010-05-04 Tokyo Electron Limited Film precursor tray for use in a film precursor evaporation system and method of using
US7488512B2 (en) 2004-11-29 2009-02-10 Tokyo Electron Limited Method for preparing solid precursor tray for use in solid precursor evaporation system
US7638002B2 (en) 2004-11-29 2009-12-29 Tokyo Electron Limited Multi-tray film precursor evaporation system and thin film deposition system incorporating same
US7484315B2 (en) 2004-11-29 2009-02-03 Tokyo Electron Limited Replaceable precursor tray for use in a multi-tray solid precursor delivery system
US20060185597A1 (en) * 2004-11-29 2006-08-24 Kenji Suzuki Film precursor evaporation system and method of using
DE102004062552A1 (de) * 2004-12-24 2006-07-06 Aixtron Ag Vorrichtung zum Verdampfen von kondensierten Stoffen
US7651570B2 (en) 2005-03-31 2010-01-26 Tokyo Electron Limited Solid precursor vaporization system for use in chemical vapor deposition
US7345184B2 (en) * 2005-03-31 2008-03-18 Tokyo Electron Limited Method and system for refurbishing a metal carbonyl precursor
US8268078B2 (en) * 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
JP4847365B2 (ja) * 2006-03-22 2011-12-28 キヤノン株式会社 蒸着源および蒸着装置
US7892358B2 (en) * 2006-03-29 2011-02-22 Tokyo Electron Limited System for introducing a precursor gas to a vapor deposition system
US20070231489A1 (en) * 2006-03-29 2007-10-04 Tokyo Electron Limited Method for introducing a precursor gas to a vapor deposition system
US20080241805A1 (en) * 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US7473634B2 (en) * 2006-09-28 2009-01-06 Tokyo Electron Limited Method for integrated substrate processing in copper metallization
CN101522943B (zh) * 2006-10-10 2013-04-24 Asm美国公司 前体输送系统
US7846256B2 (en) * 2007-02-23 2010-12-07 Tokyo Electron Limited Ampule tray for and method of precursor surface area
KR101123706B1 (ko) * 2007-03-06 2012-03-20 도쿄엘렉트론가부시키가이샤 증착 장치의 제어 장치 및 증착 장치의 제어 방법
US20080242088A1 (en) * 2007-03-29 2008-10-02 Tokyo Electron Limited Method of forming low resistivity copper film structures
US7829454B2 (en) * 2007-09-11 2010-11-09 Tokyo Electron Limited Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
US7704879B2 (en) * 2007-09-27 2010-04-27 Tokyo Electron Limited Method of forming low-resistivity recessed features in copper metallization
US7884012B2 (en) * 2007-09-28 2011-02-08 Tokyo Electron Limited Void-free copper filling of recessed features for semiconductor devices
US20130249125A1 (en) * 2007-11-13 2013-09-26 James J. McKinley Variable concentration dynamic headspace vapor source generator
US9034105B2 (en) * 2008-01-10 2015-05-19 American Air Liquide, Inc. Solid precursor sublimator
US7776740B2 (en) * 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US7799681B2 (en) * 2008-07-15 2010-09-21 Tokyo Electron Limited Method for forming a ruthenium metal cap layer
US20100081274A1 (en) * 2008-09-29 2010-04-01 Tokyo Electron Limited Method for forming ruthenium metal cap layers
US7977235B2 (en) * 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
US8716132B2 (en) * 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers
EP2437619B1 (en) * 2009-06-05 2016-12-28 Desmet Ballestra North America, Inc. Improved desolventizer toaster with vapor recycle
US8997775B2 (en) * 2011-05-24 2015-04-07 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
US8776821B2 (en) * 2011-05-24 2014-07-15 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
KR20200124780A (ko) 2012-05-31 2020-11-03 엔테그리스, 아이엔씨. 배취식 침착을 위한 고 물질 플럭스를 갖는 유체의 소스 시약-기반 수송
CN105324715B (zh) 2013-07-03 2019-12-10 村田机械株式会社 保管容器
WO2015164029A1 (en) * 2014-04-21 2015-10-29 Entegris, Inc. Solid vaporizer
US9951420B2 (en) * 2014-11-10 2018-04-24 Sol Voltaics Ab Nanowire growth system having nanoparticles aerosol generator
KR102360536B1 (ko) * 2015-03-06 2022-02-08 엔테그리스, 아이엔씨. 고체 공급원 전달을 위한 고-순도 텅스텐 헥사카보닐
CN105624650B (zh) * 2016-01-04 2018-11-23 京东方科技集团股份有限公司 一种装置及该装置的使用方法
KR20170119360A (ko) * 2016-04-18 2017-10-27 삼성전자주식회사 고체 소스 공급 유닛, 가스 공급 유닛, 그리고 기판 처리 방법
JP6595421B2 (ja) 2016-08-24 2019-10-23 東芝メモリ株式会社 気化システム
US11926894B2 (en) 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US10876205B2 (en) 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
WO2018218373A1 (en) * 2017-06-02 2018-12-06 Simon Fraser University Method of patterned deposition employing pressurized fluids and thermal gradients
JP6895372B2 (ja) * 2017-12-12 2021-06-30 東京エレクトロン株式会社 原料容器
US20190186003A1 (en) * 2017-12-14 2019-06-20 Entegris, Inc. Ampoule vaporizer and vessel
KR20200020608A (ko) 2018-08-16 2020-02-26 에이에스엠 아이피 홀딩 비.브이. 고체 소스 승화기
CN110885970B (zh) * 2018-09-11 2024-06-21 北京北方华创微电子装备有限公司 固体前驱体蒸汽的稳压和纯化装置以及ald沉积设备
US11623163B2 (en) 2018-10-31 2023-04-11 Ecodyst, Inc. Falling film evaporator system and methods
JP6887688B2 (ja) * 2019-02-07 2021-06-16 株式会社高純度化学研究所 蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム
JP6901153B2 (ja) 2019-02-07 2021-07-14 株式会社高純度化学研究所 薄膜形成用金属ハロゲン化合物の固体気化供給システム。
WO2020251696A1 (en) 2019-06-10 2020-12-17 Applied Materials, Inc. Processing system for forming layers
US11624113B2 (en) 2019-09-13 2023-04-11 Asm Ip Holding B.V. Heating zone separation for reactant evaporation system
US11661653B2 (en) * 2019-12-18 2023-05-30 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Vapor delivery systems for solid and liquid materials
CN113529053B (zh) * 2021-09-13 2021-12-28 浙江陶特容器科技股份有限公司 一种用于半导体加工的固态前驱体源升华装置及方法
CN116553656A (zh) * 2022-01-28 2023-08-08 阳程科技股份有限公司 海水转换机构
CN114751052B (zh) * 2022-04-30 2023-11-24 苏州宇信特殊包装股份有限公司 一种防潮脆盘及其加工装置
CN114811423A (zh) * 2022-05-18 2022-07-29 江苏南大光电材料股份有限公司 一种固态源气化装置
CN115046127B (zh) * 2022-06-24 2024-12-10 江苏南大光电材料股份有限公司 用于固体化合物供应的钢瓶结构
CN116103636A (zh) * 2023-04-12 2023-05-12 上海星原驰半导体有限公司 固相前驱体输出装置及气相沉积系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6133159A (en) * 1998-08-27 2000-10-17 Micron Technology, Inc. Methods for preparing ruthenium oxide films
US6270839B1 (en) * 1999-08-20 2001-08-07 Pioneer Corporation Device for feeding raw material for chemical vapor phase deposition and method therefor
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3003249A (en) * 1958-05-01 1961-10-10 Templeton Robert Alexa Spencer Treatment of products and materials
US3801294A (en) * 1971-12-15 1974-04-02 Corning Glass Works Method of producing glass
US4190965A (en) * 1979-01-15 1980-03-04 Alternative Pioneering Systems, Inc. Food dehydrator
US4378987A (en) * 1981-10-15 1983-04-05 Corning Glass Works Low temperature method for making optical fibers
US4817557A (en) * 1983-05-23 1989-04-04 Anicon, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
US4948623A (en) * 1987-06-30 1990-08-14 International Business Machines Corporation Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex
US4938999A (en) * 1988-07-11 1990-07-03 Jenkin William C Process for coating a metal substrate by chemical vapor deposition using a metal carbonyl
EP1069610A2 (en) * 1990-01-08 2001-01-17 Lsi Logic Corporation Refractory metal deposition process for low contact resistivity to silicon and corresponding apparatus
US6113982A (en) * 1990-06-25 2000-09-05 Lanxide Technology Company, Lp Composite bodies and methods for making same
JPH0598445A (ja) 1991-07-05 1993-04-20 Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai 有機金属化学気相蒸着用原料容器
US5221354A (en) * 1991-11-04 1993-06-22 General Electric Company Apparatus and method for gas phase coating of hollow articles
JPH06306584A (ja) 1993-04-21 1994-11-01 Asahi Glass Co Ltd 真空蒸着用原料成形体の製造方法
US6024915A (en) * 1993-08-12 2000-02-15 Agency Of Industrial Science & Technology Coated metal particles, a metal-base sinter and a process for producing same
JPH1025576A (ja) * 1996-04-05 1998-01-27 Dowa Mining Co Ltd Ｃｖｄ成膜法における原料化合物の昇華方法
US6203619B1 (en) * 1998-10-26 2001-03-20 Symetrix Corporation Multiple station apparatus for liquid source fabrication of thin films
EP1216109A1 (en) * 1999-07-12 2002-06-26 ASML US, Inc. METHOD AND SYSTEM FOR i IN SITU /i CLEANING OF SEMICONDUCTOR MANUFACTURING EQUIPMENT USING COMBINATION CHEMISTRIES
US6380080B2 (en) * 2000-03-08 2002-04-30 Micron Technology, Inc. Methods for preparing ruthenium metal films
US6440494B1 (en) * 2000-04-05 2002-08-27 Tokyo Electron Limited In-situ source synthesis for metal CVD
US6429127B1 (en) * 2000-06-08 2002-08-06 Micron Technology, Inc. Methods for forming rough ruthenium-containing layers and structures/methods using same
US6903005B1 (en) * 2000-08-30 2005-06-07 Micron Technology, Inc. Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics
US20040161545A1 (en) * 2000-11-28 2004-08-19 Shipley Company, L.L.C. Adhesion method
US20030019428A1 (en) * 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US20030111014A1 (en) * 2001-12-18 2003-06-19 Donatucci Matthew B. Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds
US6812143B2 (en) * 2002-04-26 2004-11-02 International Business Machines Corporation Process of forming copper structures
US20030211736A1 (en) * 2002-05-07 2003-11-13 Tokyo Electron Limited Method for depositing tantalum silicide films by thermal chemical vapor deposition
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US7300038B2 (en) * 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
WO2004011695A2 (en) 2002-07-30 2004-02-05 Asm America, Inc. Sublimation system employing carrier gas
JP2004137480A (ja) * 2002-09-20 2004-05-13 Tdk Corp 蛍光体薄膜およびその製造方法ならびにｅｌパネル
JP4126219B2 (ja) * 2002-11-06 2008-07-30 東京エレクトロン株式会社 成膜方法
US7156380B2 (en) * 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
US20050147749A1 (en) * 2004-01-05 2005-07-07 Msp Corporation High-performance vaporizer for liquid-precursor and multi-liquid-precursor vaporization in semiconductor thin film deposition
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
US7270848B2 (en) * 2004-11-23 2007-09-18 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US20060115590A1 (en) * 2004-11-29 2006-06-01 Tokyo Electron Limited; International Business Machines Corporation Method and system for performing in-situ cleaning of a deposition system
US7488512B2 (en) * 2004-11-29 2009-02-10 Tokyo Electron Limited Method for preparing solid precursor tray for use in solid precursor evaporation system
US8435351B2 (en) * 2004-11-29 2013-05-07 Tokyo Electron Limited Method and system for measuring a flow rate in a solid precursor delivery system
US20060185597A1 (en) * 2004-11-29 2006-08-24 Kenji Suzuki Film precursor evaporation system and method of using
US7638002B2 (en) * 2004-11-29 2009-12-29 Tokyo Electron Limited Multi-tray film precursor evaporation system and thin film deposition system incorporating same
US7484315B2 (en) * 2004-11-29 2009-02-03 Tokyo Electron Limited Replaceable precursor tray for use in a multi-tray solid precursor delivery system
US20060182886A1 (en) * 2005-02-15 2006-08-17 Guidotti Emmanuel P Method and system for improved delivery of a precursor vapor to a processing zone
US7273814B2 (en) * 2005-03-16 2007-09-25 Tokyo Electron Limited Method for forming a ruthenium metal layer on a patterned substrate
US7566477B2 (en) * 2005-03-31 2009-07-28 Tokyo Electron Limited Method for saturating a carrier gas with precursor vapor
US7651570B2 (en) * 2005-03-31 2010-01-26 Tokyo Electron Limited Solid precursor vaporization system for use in chemical vapor deposition
US7396766B2 (en) * 2005-03-31 2008-07-08 Tokyo Electron Limited Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
US7132128B2 (en) * 2005-03-31 2006-11-07 Tokyo Electron Limited Method and system for depositing material on a substrate using a solid precursor
US7482269B2 (en) * 2005-09-28 2009-01-27 Tokyo Electron Limited Method for controlling the step coverage of a ruthenium layer on a patterned substrate
JP4960720B2 (ja) * 2006-02-10 2012-06-27 東京エレクトロン株式会社 膜前駆体蒸発システムにおいて使用される膜前駆体のトレーおよびその使用方法
US20070237895A1 (en) * 2006-03-30 2007-10-11 Tokyo Electron Limited Method and system for initiating a deposition process utilizing a metal carbonyl precursor
US7473634B2 (en) * 2006-09-28 2009-01-06 Tokyo Electron Limited Method for integrated substrate processing in copper metallization
US7763311B2 (en) * 2007-03-28 2010-07-27 Tokyo Electron Limited Method for heating a substrate prior to a vapor deposition process

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6133159A (en) * 1998-08-27 2000-10-17 Micron Technology, Inc. Methods for preparing ruthenium oxide films
US6270839B1 (en) * 1999-08-20 2001-08-07 Pioneer Corporation Device for feeding raw material for chemical vapor phase deposition and method therefor
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition

Also Published As

Publication number Publication date
CN101065515A (zh) 2007-10-31
US7638002B2 (en) 2009-12-29
TW200629376A (en) 2006-08-16
KR20070089785A (ko) 2007-09-03
US20070032079A1 (en) 2007-02-08
TWI300956B (en) 2008-09-11
EP1863950A1 (en) 2007-12-12
JP2008522033A (ja) 2008-06-26
CN101065516A (zh) 2007-10-31
US20060112882A1 (en) 2006-06-01
CN101065516B (zh) 2010-12-01
WO2006058310A1 (en) 2006-06-01
ATE510043T1 (de) 2011-06-15
US7459396B2 (en) 2008-12-02
EP1863950B1 (en) 2011-05-18
JP5015002B2 (ja) 2012-08-29
KR101194888B1 (ko) 2012-10-25

Similar Documents

Publication Publication Date Title
CN101065515B (zh) 包括可置换可堆叠盘的固态前驱体传输系统
JP4975639B2 (ja) 交換式の積み重ね可能なトレイを備える固体前駆体供給システム
US7846256B2 (en) Ampule tray for and method of precursor surface area
US7488512B2 (en) Method for preparing solid precursor tray for use in solid precursor evaporation system
KR101289559B1 (ko) 막 전구체 증발 시스템과 그 사용 방법
US7651570B2 (en) Solid precursor vaporization system for use in chemical vapor deposition
JP4960720B2 (ja) 膜前駆体蒸発システムにおいて使用される膜前駆体のトレーおよびその使用方法
CN101065514B (zh) 用于测量固态前驱体传输系统中的流率的方法和系统
KR101372793B1 (ko) 증착 시스템, 막 전구체 증발 시스템, 및 금속층의 증착 방법
US7132128B2 (en) Method and system for depositing material on a substrate using a solid precursor
US7708835B2 (en) Film precursor tray for use in a film precursor evaporation system and method of using
US7566477B2 (en) Method for saturating a carrier gas with precursor vapor
TWI306642B (en) Replaceable precursor tray for use in a multi-tray solid precursor delivery system

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100526

Termination date: 20151003

EXPY Termination of patent right or utility model